1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon
MPN: 1EDN8511BXUSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.99 | $0.99 |
| 10 | $0.89 | $8.90 |
| 100 | $0.75 | $75.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.54 | $540.00 |
1EDN8511BXUSA1 Overview
A gate driver IC is the crucial link between a low-power control stage (microcontroller, DSP, FPGA, isolated PWM controller) and a high-power switching device (MOSFET, IGBT, GaN). The driver translates the logic-level PWM signal into a high-current gate-charge/-discharge waveform capable of slewing large gate capacitances in nanoseconds, which directly determines switching loss, EMI signature, and ultimately power-conversion efficiency.
Key features of the 1EDN8511BXUSA1 include a typ. Β±5 ns propagation delay accuracy, 8 V UVLO (under-voltage lockout) threshold, an industry-standard SOT-23-6 pinout that is drop-in compatible with the 1EDN75x/1EDN85x family, and a -40 Β°C to +150 Β°C operating junction temperature range. The 8 A sink capability makes the part particularly suited to GaN transistors whose gates must be pulled hard below threshold to avoid false turn-on.
Architecturally, the driver combines a TTL/CMOS-compatible input stage with a complementary push-pull output stage using matched driver transistors. The internal 8 V UVLO guarantees that the driver only enables the output stage once VCC exceeds the minimum gate-drive voltage of the load MOSFET/GaN, preventing partial-turn-on operation that would otherwise cause excessive dissipation.
Typical applications include synchronous buck converters, half-bridge and full-bridge topologies in telecom/datacenter 48 V point-of-load modules, telecom rectifier stages, motor-drive low-side switches, and high-frequency DC-DC converters used in server and industrial automation systems.
When designing with this device, ensure VCC decoupling with at minimum a 1 Β΅F ceramic capacitor placed within 3 mm of the VCC pin to provide the high di/dt charge required during switching transients, and route the gate-loop return path directly to the driver GND pin to minimise parasitic inductance.
This page synthesises distributor pricing, verified drop-in alternatives, and practical PCB-layout notes that are not duplicated on the Infineon datasheet.
Drop-in alternatives for 1EDN8511BXUSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1EDN8511BXUSA1 (same form factor and footprint) β differing in Package, Isolation Voltage (Vrms), Operating Temperature Range, Peak Sink Current, Peak Source Current.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1EDN8550B
β Drop-Inπ Reference alternative (not in catalog)
1EDN7511B
β Drop-Inπ Reference alternative (not in catalog)
1EDN8511B
β Drop-Inπ Reference alternative (not in catalog)
UCC27517DBVR
β Drop-Inπ Reference alternative (not in catalog)
UCC27531DBVR
β Drop-Inπ Reference alternative (not in catalog)
NCP81071AZR2G
β Drop-Inπ Reference alternative (not in catalog)
1EDN8511BXUSA1 Maximum Ratings & Electrical Characteristics
| Channel Count | 1 |
| Driver Configuration | Low-side |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Input Stage | Inverting and non-inverting |
| UVLO Threshold | 8 V |
| Operating Junction Temperature | -40 Β°C to +150 Β°C |
| Package | PG-SOT23-6-2 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Logic Input Compatibility | TTL / CMOS |
| Target Switch Type | Power MOSFET, GaN HEMT |
| RoHS Status | Compliant |
1EDN8511BXUSA1 Pin Configuration
| Pin 1 | VCC β Driver supply voltage (decouple with β₯1 Β΅F ceramic) |
| Pin 2 | IN+ β Non-inverting logic input (TTL/CMOS) |
| Pin 3 | IN- β Inverting logic input (TTL/CMOS, internally bonded; tie to IN+ for non-inverting) |
| Pin 4 | GND β Ground return for input and driver logic |
| Pin 5 | OUT β Gate drive output to the power MOSFET/GaN gate |
| Pin 6 | NC β Not connected (per datasheet) |
Typical Applications
1EDN8511BXUSA1 is suitable for 6 applications: 48 V Point-of-Load Synchronous Buck, Telecom Half-Bridge GaN Converter, Industrial Motor-Drive Low-Side Switch, Server & Datacenter DC-DC Converter, Solar Microinverter Low-Side Switching, USB-PD Fast-Charge Adapter.
48 V Point-of-Load Synchronous Buck
The 1EDN8511BXUSA1 drives the low-side MOSFET in 48 V-to-PoL synchronous buck converters used in telecom and datacom boards. Its 8 A sink current pulls the LS MOSFET gate hard below threshold during the freewheeling phase, eliminating shoot-through risk, while the Β±5 ns propagation delay accuracy enables tight dead-time control that directly improves light-load efficiency. Placed between the controller's LS PWM output and the LS MOSFET gate, with VCC decoupled by a 1 Β΅F X7R ceramic within 3 mm of the pin. Unlike discrete gate-buffer circuits, the integrated UVLO at 8 V guarantees the driver only operates when the gate-drive rail is fully established, preventing partial-turn-on losses. The 4 A source capability is sufficient for most 40-60 V-rated MOSFETs in the 25-40 A current class typical of PoL modules.
Recommended
Telecom Half-Bridge GaN Converter
In 48 V-to-load telecom converters using enhancement-mode GaN HEMTs (e.g. 100 V-rated GaN), the 1EDN8511BXUSA1 serves as the low-side gate driver with industry-standard SOT-23-6 footprint that is drop-in compatible with the 1EDN75x/1EDN85x family. Its 8 A sink is critical for GaN half-bridges because the very low Vgs(th) of GaN devices makes them susceptible to Miller-induced false turn-on; the strong sink pulls the gate well below threshold during the off-state. The -40 Β°C to +150 Β°C junction temperature range supports the harsh thermal environment of sealed telecom bricks, and the 8 V UVLO matches standard 9 V or 12 V gate-drive rails. For the high-side switch, pair with the Infineon 1EDI60N12AFXUMA1 isolated driver.
Recommended
Industrial Motor-Drive Low-Side Switch
Industrial motor-drive inverters operating from 24-48 V DC bus use the 1EDN8511BXUSA1 as the low-side gate driver for IGBT or MOSFET half-bridge legs where 8 A sink enables fast Miller plateau discharge. With TTL/CMOS-compatible inputs, the driver interfaces directly to 3.3 V or 5 V logic outputs from MCUs, DSPs, or dedicated motor-control ICs, eliminating the need for external level shifters. The wide operating temperature range up to +150 Β°C junction ensures reliable operation in sealed industrial enclosures where ambient can reach 85 Β°C or higher. In a typical 3-phase inverter, three 1EDN8511BXUSA1 parts are used for the low-side IGBTs of each phase leg, with isolated drivers (e.g. 1EDI60N12AFXUMA1) handling the high-side switches to provide the required galvanic isolation across the DC bus.
Recommended
Server & Datacenter DC-DC Converter
Hyperscale server 48 V-to-1 V (or 48 V-to-PoL) DC-DC stages use the 1EDN8511BXUSA1 in the low-side drive position to switch high-Qg MOSFETs at 100-500 kHz with minimum switching loss. The 8 A sink discharges the gate capacitance during the turn-off transition in nanoseconds, reducing the Miller plateau time and improving full-load efficiency by 0.5-1 % over drivers with weaker sink current. The 4 A source is sufficient because the MOSFET turn-on transition does not require as much instantaneous current when the gate-drive voltage is well above threshold. Placed within 5 mm of the driven MOSFET to limit gate-loop inductance, with separate gate-source resistor networks (typically 4.7 Ξ© source / 1 Ξ© sink) to dampen ringing on the fast-edge gate waveform.
Recommended
Solar Microinverter Low-Side Switching
In photovoltaic microinverters converting 25-40 V panel output to AC mains, the 1EDN8511BXUSA1 drives the low-side switch of the high-frequency push-pull or full-bridge primary stage. Its 8 A sink capability cleanly commutates the LS MOSFET at up to 100 kHz, minimising switching loss while the 8 V UVLO prevents operation below the safe gate-drive threshold. The wide -40 Β°C to +150 Β°C operating range handles outdoor thermal cycling, and the SOT-23-6 footprint keeps the driver loop area small - critical for clean switching at high di/dt. The TTL-compatible input allows direct connection to a digital isolator's output, simplifying the isolated drive chain from the MCU to the power stage.
Recommended
USB-PD Fast-Charge Adapter
USB-Power-Delivery adapters using active-clamp flyback or LLC topologies leverage the 1EDN8511BXUSA1 as the low-side primary MOSFET driver in the synchronous-rectifier or active-clamp position. The 8 A sink rapidly discharges the gate of the primary MOSFET during turn-off, reducing switching loss and improving the adapter's efficiency at 65 W, 100 W, and 140 W output power levels - the difference between meeting and missing DOE Level VI / CoC Tier 2 efficiency mandates. The SOT-23-6 micro-footprint allows placement adjacent to the primary MOSFET to minimise gate-loop inductance, while the wide temperature range supports sealed adapter enclosures where internal ambient can reach 90-100 Β°C. The driver's low quiescent current contributes less than 1 mW to standby power, helping meet the < 50 mW no-load target.
Recommended
Recommended Products Summary
Engineering reference data for 1EDN8511BXUSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDN8550B | 1EDN7511B | 1EDN8511B | UCC27517DBVR | UCC27531DBVR | NCP81071AZR2G |
|---|---|---|---|---|---|---|---|
| Package | PG-SOT23-6-2 | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | SOT-23-6 (DBV) - same footprint | SOT-23-6 (DBV) - same footprint | SOT-23-6 - same footprint |
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Texas Instruments (cross-brand) | Texas Instruments (cross-brand) | onsemi (cross-brand) |
| Peak Source Current | 4 A | 5 A | 4 A | 4 A | 4 A | 5 A | 5 A |
| Peak Sink Current | 8 A | 8 A | 8 A | 8 A | 4 A | 5 A | 5 A |
| UVLO Threshold | 8 V | 8 V | 5 V | 8 V | 4 V | 4 V | 5 V |
| Driver Configuration | Low-side | Low-side | Low-side | Low-side | Low-side | Low-side | Low-side |
| Channel Count | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Operating Junction Temperature | -40 Β°C to +150 Β°C | -40 Β°C to +150 Β°C | -40 Β°C to +150 Β°C | -40 Β°C to +150 Β°C | -40 Β°C to +140 Β°C | -40 Β°C to +140 Β°C | -40 Β°C to +150 Β°C |
Key Differentiators
- 8 A sink current - 2Γ higher than TI UCC27517 family (vs UCC27517DBVR)
- 8 V UVLO matched to standard 9-12 V GaN/MOSFET gate rails (vs UCC27531DBVR)
- Family-level drop-in compatibility with 1EDN75x/1EDN85x (vs NCP81071AZR2G)
Design Notes
Gate-loop inductance is the dominant EMI source in high-dV/dt gate-drive circuits. Estimated: with 8 A sink into a gate-source loop of 5 nH total inductance, the overshoot at gate turn-off can reach VCC + L Γ di/dt β 12 V + 5 nH Γ (8 A / 1 ns) = 52 V above ground, exceeding the MOSFET Vgs rating. Keep the OUT-to-GND trace loop under 5 mm in length and use a 0.5-1 Ξ© gate-source resistor to damp the LC ringing.
VCC decoupling must supply the peak gate-charge current without significant voltage droop. Estimated: a 10 nC Qg MOSFET switched at 500 kHz requires average drive current = Qg Γ f = 10 nC Γ 500 kHz = 5 mA, but the instantaneous current is 8 A peak for ~1 ns. Place a 1 Β΅F X7R ceramic within 3 mm of the VCC pin, plus a 0.1 Β΅F decoupling cap adjacent to the driver GND pin. Adding a ferrite bead on the VCC line can suppress high-frequency noise from the upstream supply.
Do not leave the IN- pin floating - tie it to IN+ if the inverting function is not used, or to GND if only the inverting input is used. An undriven IN- pin can pick up noise and cause spurious output transitions. Also verify that VCC is always above the 8 V UVLO threshold during startup; otherwise the driver may produce partial turn-on waveforms that stress the driven MOSFET. For GaN driving, ensure VCC is decoupled with low-ESR ceramic because GaN gate charge transitions occur in < 1 ns.
Compliance Information
RoHS compliant per Infineon product page. Halogen-free status not confirmed in the verified data; marked unknown. AEC-Q100 not specifically stated; the part's -40 to +150 Β°C operating range makes it suitable for industrial environments but automotive qualification should be confirmed with Infineon.
