1N5711WS-7-F - 70V 15mA RF Schottky Diode SOD-323 | Diodes Inc
MPN: 1N5711WS-7-F β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.28 | $0.28 |
| 10 | $0.2 | $2.00 |
| 100 | $0.11 | $11.00 |
| 500 | $0.082 | $41.00 |
| 1,000 | $0.065 | $65.00 |
| 3,000 | $0.051 | $153.00 |
1N5711WS-7-F Overview
A Schottky barrier diode is a rectifier formed by a metal-semiconductor junction instead of a conventional P-N junction, resulting in a low forward voltage, extremely fast switching (no reverse recovery charge), and low junction capacitance. Within the power management and discrete semiconductor hierarchy, RF Schottky diodes such as the 1N5711WS-7-F sit at the low-current, high-frequency end of the rectifier family, specialized for signal detection, mixing, and high-speed switching rather than power rectification.
Key features include a 70V reverse voltage rating that is unusually high for a small-signal Schottky, a low junction capacitance of 2 pF at 0V, 1 MHz, and metal-to-silicon barrier construction that eliminates reverse recovery time. The -7-F suffix indicates lead-free, RoHS-compliant tape-and-reel packaging suited to automated SMT assembly.
The low 2 pF capacitance and fast switching make this part ideal for RF detector circuits, video detectors, high-speed logic clamps, and sampling gates up into the hundreds of megahertz. The 15 mA current rating confines it to signal-level duties; it is not a power rectifier.
Typical applications include RF envelope detectors in receiver front ends, sample-and-hold and peak-detect circuits, UHF mixers, and reverse-polarity or ESD clamp roles in high-speed digital lines where silicon diodes would be too slow.
When designing, remember that Schottky leakage rises steeply with temperature; derate the 150 mW rating at elevated ambient temperature and verify the 70V rating includes transients.
This page adds distributor pricing tiers, verified drop-in alternatives, comparison tables, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for 1N5711WS-7-F β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1N5711WS-7-F (same form factor and footprint) β differing in Package, Power Dissipation, Diode Type, Reverse Recovery, RoHS Status.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1N5711WS-7
β Drop-Inπ Reference alternative (not in catalog)
SD101AWS-7-F
β Drop-Inπ Reference alternative (not in catalog)
1N5711WS-7-F Maximum Ratings & Electrical Characteristics
| Diode Type | Schottky - Single (RF) |
| Peak Reverse Voltage (VRRM) | 70 V |
| Max Forward Current (IF) | 15 mA |
| Power Dissipation | 150 mW |
| Junction Capacitance (Cj) | 2 pF @ 0 V, 1 MHz |
| Reverse Recovery | None (Schottky barrier, no reverse recovery charge) |
| Configuration | Single diode |
| Technology | Si, metal-semiconductor Schottky barrier |
| Package | SOD-323 (SC-76), 2-pin |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (-7-F suffix), lead-free |
| RoHS Status | Compliant (lead-free -F suffix) |
| AEC-Q101 | Not qualified (standard grade; automotive requires Q-suffix per manufacturer PCN guidance) |
| Product Family | 1N5711 series |
1N5711WS-7-F Pin Configuration
| Pin 1 | Cathode (K) β Cathode terminal, marked by the package band/polarity stripe |
| Pin 2 | Anode (A) β Anode terminal, current flows from anode to cathode in forward conduction |
Typical Applications
1N5711WS-7-F is suitable for 6 applications: RF Envelope Detection, High-Speed Logic Clamping, Sample-and-Hold and Peak Detection, UHF and VHF Mixer Circuits, Reverse Polarity and Battery Protection, Video and IF Signal Detection in Instrumentation.
RF Envelope Detection
The 1N5711WS-7-F excels as an envelope or AM detector because its 2 pF junction capacitance at 0 V, 1 MHz preserves high-frequency response, and its metal-semiconductor Schottky junction provides square-law detection at low signal levels with no reverse recovery distortion. In a classic half-wave envelope detector, the diode charges a hold capacitor on positive RF peaks; the low capacitance keeps the detector input impedance high at VHF and UHF, while the 70 V reverse rating tolerates large local-oscillator or input swings. Use a small load resistor (e.g., 1 kΞ© to 100 kΞ©) to set the discharge time constant relative to the modulation bandwidth, and keep the diode current well below the 15 mA rating to stay in the desirable detection region.
Recommended
High-Speed Logic Clamping
On fast digital lines, silicon P-N diodes are too slow because stored charge causes Schottky-delayed turn-off; the 1N5711WS-7-F, being a true Schottky with no reverse recovery charge, clamps within picoseconds and does not inject long recovery transients. The 70 V rating gives generous headroom for clamps referenced to rails or ground on interfaces that can ring well above nominal logic levels. Its SOD-323 package contributes minimal series inductance, keeping the clamp effective at fast edge rates. Place the diode physically adjacent to the protected pin, with the return path to the reference plane kept short, since a few nanohenries of lead inductance can undo the speed advantage of the Schottky barrier during a fast transient.
Recommended
Sample-and-Hold and Peak Detection
In sample-and-hold and peak-detect circuits, the acquisition switch diode must charge a hold capacitor quickly while leaking negligible current afterwards. The 1N5711WS-7-F provides a low forward voltage for fast charge transfer and the absence of reverse recovery means minimal charge injection at turn-off, reducing pedestal error. Its 2 pF capacitance adds little to the hold node. Pair it with a low-input-bias buffer to minimize droop; note that Schottky leakage rises steeply with temperature, so for long hold intervals at elevated temperature, verify the reverse leakage spec from the datasheet at the actual bias voltage and consider a FET-input amplifier to keep droop within budget.
Recommended
UHF and VHF Mixer Circuits
Single-diode passive mixers demand a diode with low junction capacitance and a hard, repeatable switching characteristic. The 1N5711WS-7-F meets these needs with 2 pF capacitance and a metal-semiconductor barrier originally developed for the 1N5711 RF mixer family, handling the 15 mA-class local oscillator drive levels typical of simple mixer designs. Its 70 V breakdown tolerates large LO swings without avalanche conduction. In a typical single-ended mixer, the diode is driven between conduction and cutoff by the LO while the RF signal is commutated to the IF port; conversion loss depends strongly on the diode series resistance and capacitance, both favorable here.
Recommended
Reverse Polarity and Battery Protection
For low-current battery-powered or portable products, the 1N5711WS-7-F can serve as a series or shunt reverse-polarity protector. In shunt configuration across the supply input, it conducts when the battery is inserted backwards, blowing a series fuse or triggering protection; the 70 V rating covers high-voltage battery stacks and the 15 mA class suits signaling circuits. Because it is a Schottky, the low forward voltage minimizes loss when used in series for very low-current rails, though designers should confirm that continuous forward current stays below 15 mA and that dissipation under fault conditions remains within the 150 mW package limit or is transient only.
Recommended
Video and IF Signal Detection in Instrumentation
Test and measurement front ends, signal-strength meters, and video detectors use small-signal Schottky diodes like the 1N5711WS-7-F to rectify wideband signals without the turn-off distortion of junction diodes. The 2 pF capacitance supports bandwidth well into the hundreds of megahertz, and the predictable forward characteristic allows calibration against a lookup table for logarithmic detector applications. Mount the diode directly at the detection node with a short ground return, drive it from a 50 Ξ© source impedance for flat frequency response, and temperature-compensate the reading since Schottky forward voltage drifts with temperature; a matched reference diode on the same PCB improves accuracy.
Recommended
Recommended Products Summary
Engineering reference data for 1N5711WS-7-F β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1N5711WS-7 | SD101AWS-7-F | 1N5711 |
|---|---|---|---|---|
| Package | SOD-323 (SC-76) | SOD-323 (SC-76) - same | SOD-323 (SC-76) - same | DO-35 (different footprint) |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Various / STMicroelectronics class |
| Mounting | Surface Mount | Surface Mount | Surface Mount | Through-Hole |
Key Differentiators
- 70 V breakdown in a low-capacitance small-signal Schottky (vs SD101AWS-7-F)
- 2 pF junction capacitance for wideband detection (vs 1N5711 (DO-35))
- No reverse recovery charge (vs Silicon PN small-signal diodes (e.g., 1N4148W class))
Design Notes
For RF detector or clamp duty, minimize the loop area between the diode, the signal trace, and ground. SOD-323 adds only a few tenths of a nanohenry of internal lead inductance, but via placement and trace routing dominate at VHF/UHF. Place the cathode band consistently with schematic polarity, since SOD-323 polarity (band = cathode) is universal but silkscreen errors are a common assembly defect. Use the standard SOD-323 land pattern from the datasheet package outline; do not shrink pads below spec, as reflow joint reliability depends on the specified pad geometry.
The 150 mW dissipation limit applies at the datasheet reference ambient; derate linearly above it per the datasheet derating curve. Estimated: at a typical Schottky forward drop near 0.4 V, the full 15 mA current dissipates only about 6 mW, leaving huge thermal margin in SOD-323. Trouble arises in clamp applications absorbing transient energy - a repeated high-energy clamp can average out to significant power. If your clamp events exceed a few millijoules each at high repetition rate, compute average power as event energy times repetition rate and compare against the derated 150 mW budget.
Three frequent mistakes: (1) treating this as a power rectifier - 15 mA maximum means it cannot rectify supply rails; (2) ignoring reverse leakage temperature dependence - Schottky leakage roughly doubles per 10 degrees C, which matters in sample-and-hold circuits at 70 V bias; (3) substituting the SOD-123 1N5711W-7-F onto an SOD-323 footprint - the packages are not pin-compatible. Also verify the exact suffix: -7-F is the RoHS tape-and-reel version; ordering -13 changes only packing quantity, but non-F suffixes may not meet lead-free requirements.
Compliance Information
RoHS compliance and lead-free status are denoted by the -F suffix per Diodes Incorporated naming convention. Datasheet notes state that for automotive applications requiring AEC-Q101/PPAP, buyers should refer to the related automotive-grade Q-suffix part.
