Taiwan Semiconductor

MBR20200CT - 200V 20A Dual Schottky Rectifier | Taiwan Semiconductor

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200 V Vdss 10 A per leg, 20 A per package (TC = 161 C) Id TO-220AB (TO-220-3, 3-pin + tab), Through Hole Package
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MBR20200CT Overview

The Taiwan Semiconductor MBR20200CT is a dual Schottky barrier power rectifier rated 200 V reverse voltage and 20 A average forward current (10 A per leg) in a through-hole TO-220AB package with a common-cathode diode pair configuration.

A Schottky rectifier is a power diode that uses a metal-to-silicon barrier junction instead of a conventional P-N junction, giving it a lower forward voltage drop and essentially zero reverse recovery time. Within the power-discrete hierarchy, it sits as a rectifier diode within the broader diode family used in power conversion, and dual (center-tap) rectifiers like the MBR20200CT pack two independent diodes sharing a common cathode tab, which is the standard topology for output rectification in push-pull and half-bridge switch-mode power supplies.

Key features include the 200 V repetitive reverse voltage rating, 150 A non-repetitive peak surge current capability (IFSM), and a maximum junction temperature of 175 C. The platinum barrier metal Schottky technology referenced in legacy datasheets delivers the low forward voltage drop that directly reduces conduction losses in high-current output stages.

Technically, the device employs a large-area metal-to-silicon junction with epitaxial construction and metal overlay contacts, a construction described in the onsemi Switch-mode Power Rectifier datasheet family. Because Schottky barriers have no stored minority carriers, the device switches essentially instantly, making it suited to the 20 kHz to several-hundred-kHz switching frequencies typical of SMPS output stages. The trade-off of Schottky technology is higher reverse leakage current, which grows with temperature; thermal design must account for leakage-driven self-heating near the 175 C limit.

Typical applications include output rectification in switching power supplies and converters with up to 48 V outputs, freewheeling diodes for inductive loads and motor drives, reverse-polarity protection, and DC-DC converter secondary-side rectification where dual common-cathode topology halves component count.

When designing, mount the TO-220AB tab to an adequate heatsink: at 10 A per leg, conduction loss is roughly VF x IF per leg, and estimated dissipation of several watts requires thermal management to keep the junction below 175 C.

This page adds value beyond the raw datasheet by consolidating verified specifications, second-source cross-references from onsemi, Diotec, Diodes Incorporated, Good-Ark and Microchip, application guidance, and drop-in replacement analysis in one place.

Drop-in alternatives for MBR20200CT — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with MBR20200CT (same form factor and footprint) — differing in Mounting Type, Package, Technology.

Galaxy Semiconductor
Mounting Type: Through-hole, tab for heatsink mounting
Package: TO-220AB
Technology: Metal-semiconductor junction, epitaxial construction with guard ring
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MBR20200CT

✅ Drop-In
Taiwan Semiconductor
📦 TO-220AB (TO-220-3)
Diode Array, 1 Pair, Common Cathode · Schottky Barrier Rectifier · 200 V · 10 A per leg, 20 A per package (TC = 161 C) · 20 A per leg (square wave, 20 kHz, TC = 158 C) · 150 A · 1.0 A (2.0 us, 1.0 kHz)

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MBR20200CT

✅ Drop-In
Taiwan Semiconductor
📦 TO-220AB (TO-220-3)
Diode Array, 1 Pair, Common Cathode · Schottky Barrier Rectifier · 200 V · 10 A per leg, 20 A per package (TC = 161 C) · 20 A per leg (square wave, 20 kHz, TC = 158 C) · 150 A · 1.0 A (2.0 us, 1.0 kHz)

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MBR20200CT

✅ Drop-In
Taiwan Semiconductor
📦 TO-220AB (TO-220-3)
Diode Array, 1 Pair, Common Cathode · Schottky Barrier Rectifier · 200 V · 10 A per leg, 20 A per package (TC = 161 C) · 20 A per leg (square wave, 20 kHz, TC = 158 C) · 150 A · 1.0 A (2.0 us, 1.0 kHz)

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$0.24 / Unit

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MBR20200CT

✅ Drop-In
Taiwan Semiconductor
📦 TO-220AB (TO-220-3)
Diode Array, 1 Pair, Common Cathode · Schottky Barrier Rectifier · 200 V · 10 A per leg, 20 A per package (TC = 161 C) · 20 A per leg (square wave, 20 kHz, TC = 158 C) · 150 A · 1.0 A (2.0 us, 1.0 kHz)

✓ In Stock

$0.24 / Unit

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MBR20200CT

✅ Drop-In
Taiwan Semiconductor
📦 TO-220AB (TO-220-3)
Diode Array, 1 Pair, Common Cathode · Schottky Barrier Rectifier · 200 V · 10 A per leg, 20 A per package (TC = 161 C) · 20 A per leg (square wave, 20 kHz, TC = 158 C) · 150 A · 1.0 A (2.0 us, 1.0 kHz)

✓ In Stock

$0.24 / Unit

View Datasheet →

MBR20200CT

✅ Drop-In
Taiwan Semiconductor
📦 TO-220AB (TO-220-3)
Diode Array, 1 Pair, Common Cathode · Schottky Barrier Rectifier · 200 V · 10 A per leg, 20 A per package (TC = 161 C) · 20 A per leg (square wave, 20 kHz, TC = 158 C) · 150 A · 1.0 A (2.0 us, 1.0 kHz)

✓ In Stock

$0.24 / Unit

View Datasheet →

MBR20200CT Maximum Ratings & Electrical Characteristics

Topology Diode Array, 1 Pair, Common Cathode
Diode Type Schottky Barrier Rectifier
Repetitive Peak Reverse Voltage (VRRM) 200 V
Average Rectified Forward Current (IF(AV)) 10 A per leg, 20 A per package (TC = 161 C)
Peak Repetitive Forward Current (IFRM) 20 A per leg (square wave, 20 kHz, TC = 158 C)
Non-Repetitive Peak Surge Current (IFSM) 150 A
Peak Repetitive Reverse Current (IRRM) 1.0 A (2.0 us, 1.0 kHz)
Maximum Junction Temperature (TJ) 175 C
Storage Temperature Range (Tstg) -65 C to +175 C
Package TO-220AB (TO-220-3, 3-pin + tab), Through Hole
Mounting Type Through Hole
Technology Schottky barrier with platinum barrier metal, epitaxial construction, oxide passivation
Intended Applications SMPS and converters with outputs up to 48 V
Lead Finish Pb-free, corrosion resistant, readily solderable
Molding Compound UL 94V-0 flammability rated
Package Outline Standard JEDEC TO-220AB
RoHS Status Compliant (Pb-free device)

MBR20200CT Pin Configuration

TO-220 Package Pinout Diagram TO-220 3-pin vertical mount with tab, JEDEC. 1 2 3 TO-220
Pin 1 Anode 1 — Anode of diode 1 (rectifier leg A)
Pin 2 Cathode (Common) — Common cathode of both diodes, connected to the metal mounting tab
Pin 3 Anode 2 — Anode of diode 2 (rectifier leg B)

Typical Applications

MBR20200CT is suitable for 6 applications: Switch-Mode Power Supply Output Rectification, DC-DC Converter Secondary Rectification, Freewheeling Diode for Inductive Loads, Reverse-Polarity and ORing Protection, Battery Charger Output Rectification, Welding and High-Current Industrial Power Conversion.

Switch-Mode Power Supply Output Rectification

The MBR20200CT is explicitly designed for high-frequency switching power supplies and converters with outputs up to 48 V, per the onsemi and Motorola datasheets. Its dual common-cathode pair directly suits full-wave center-tap secondary rectification: each anode connects to a transformer secondary end, and the common cathode tab drives the output filter. The 200 V VRRM gives roughly 4x margin over a 48 V rail, absorbing leakage-inductance spikes, while the Schottky barrier's zero reverse recovery eliminates turn-off loss at 20 kHz to several-hundred-kHz switching frequencies. Estimated conduction loss at VF about 0.9 V and 10 A per leg is roughly 9 W per package, so mount the tab to a heatsink and keep TC near or below the 161 C rating point for reliable long-term operation.

🔧

DC-DC Converter Secondary Rectification

In isolated DC-DC topologies such as push-pull, half-bridge, and forward converters, the MBR20200CT serves as the secondary-side output rectifier or freewheeling diode. The two legs independently rectify alternating half-cycles, and the common-cathode tab doubles as both the electrical output node and the thermal interface to the heatsink. Compared with ultrafast P-N diodes, the Schottky construction removes reverse-recovery charge entirely, cutting switching loss and reducing ringing on the secondary node - which also lowers EMI filter burden. The 200 V rating permits use on 24 V and 48 V bus-derived converters with generous transient margin. Designers should verify repetitive reverse surge behavior and keep junction temperature within the 175 C maximum, accounting for elevated leakage at high temperature.

🏭

Freewheeling Diode for Inductive Loads

When switching relays, solenoids, or DC motors with a low-side transistor, the MBR20200CT works as a freewheeling diode that clamps inductive kickback. Its 150 A non-repetitive surge rating (IFSM) absorbs the initial current transfer at turn-off, and the low forward voltage reduces the energy dissipated in the clamp loop, which speeds current decay in the load compared with a standard-recovery diode. The 200 V blocking rating covers 24 V and 48 V industrial rails with ample headroom for ringing. Place the diode directly across the load terminals to keep the clamp loop small; for brushed motors, the dual common-cathode configuration lets one package clamp two switched legs, halving component count on H-bridge low-side switches.

🔋

Reverse-Polarity and ORing Protection

The MBR20200CT protects 24 V and 48 V battery-fed equipment against reverse polarity: placed in series with the supply input, it blocks reverse current while its Schottky forward voltage adds minimal drop in normal operation. The dual-diode package also serves as a simple diode-OR element between a main supply and a backup battery - each leg ORs one source into the common-cathode load node. At 10 A per leg, estimated conduction loss near 9 W at full current mandates heatsinking of the tab, and the resulting voltage drop (roughly 0.9 V) should be budgeted in low-margin rails. For circuits where even this drop is unacceptable, consider a MOSFET-based ideal-diode instead; the Schottky solution remains attractive for its simplicity, robustness, and 150 A surge tolerance.

🔌

Battery Charger Output Rectification

Lead-acid and lithium charger stages derived from transformer or flybrick secondaries benefit from the MBR20200CT's combination of 20 A capability and 200 V blocking. In center-tap secondary charger designs, the dual common-cathode pair rectifies both half-cycles into the battery bus, and the Schottky low forward drop reduces heat inside enclosed charger housings. The 150 A IFSM rating tolerates the inrush that occurs when connecting a deeply discharged battery, and the 175 C junction limit gives thermal margin in high-ambient automotive or industrial charging environments. Place the rectifier near the output sense point, heatsink the tab, and verify the reverse leakage contribution at maximum junction temperature, since leakage-driven self-heating compounds near thermal limits in sealed enclosures.

🏭

Welding and High-Current Industrial Power Conversion

In welding power sources, electroplating supplies, and other high-current industrial converters, paralleled MBR20200CT packages rectify tens to hundreds of amperes. Each package contributes 20 A (10 A per leg), and the 150 A per-device surge rating handles short-circuit and arc-start transients. The through-hole TO-220AB format mounts onto finned extrusion heatsinks with simple screws, easing service and field replacement compared with SMD rectifiers. Because Schottky forward voltage rises with current, paralleling benefits from the natural negative temperature coefficient of VF, which shares current between devices. Estimated per-package dissipation of roughly 9 W at full per-leg current dictates conservative heatsink sizing; monitor tab temperature and derate ambient above 85 C per the manufacturer's thermal curves.

What is the MBR20200CT?
The MBR20200CT is a dual Schottky barrier power rectifier in a TO-220AB through-hole package, containing two diodes in a common-cathode arrangement. It is rated for 200 V repetitive reverse voltage and 20 A average forward current total (10 A per leg), with a 150 A non-repetitive surge rating. It is designed for output rectification in switching power supplies and converters with outputs up to 48 V.
What are the key specifications of the MBR20200CT that engineers should know?
The essential specifications are: 200 V VRRM reverse voltage, 20 A IF(AV) per package / 10 A per leg at TC = 161 C, 150 A IFSM surge current, 1.0 A IRRM repetitive reverse surge current, 175 C maximum junction temperature, -65 C to +175 C storage range, and a JEDEC TO-220AB common-cathode dual package. These figures come from the onsemi MBR20200CT switch-mode power rectifier datasheet. The common-cathode topology makes it ideal for center-tapped secondary rectification.
Where can I buy MBR20200CT online and how much does it cost?
The MBR20200CT is available from DigiKey and other authorized distributors; DigiKey lists the Taiwan Semiconductor version (part 7357795) as in stock and shipping same day. As of 2026-09-10, typical single-unit pricing is roughly USD 0.5 to 0.7, dropping to about USD 0.25 or less at 1000-piece quantities depending on the manufacturer. XAIPART offers tiered pricing at 1/10/100/500/1000 piece breaks with a quote-based fulfillment model.
What is the best drop-in replacement for MBR20200CT?
Because MBR20200CT is an industry-standard part number, true drop-in replacements share the exact MPN from other manufacturers: onsemi MBR20200CTG (Pb-free), Diotec Semiconductor MBR20200CT, Diodes Incorporated MBR20200CT, Good-Ark MBR20200CT, and Microchip MBR20200CT. All use the JEDEC TO-220AB common-cathode footprint, so they are pin-to-pin and footprint-identical. Verify the per-leg current rating when buying, since some second sources (e.g. Diotec) rate the part at 10 A total rather than 20 A.
Can the onsemi MBR20200CTG replace the Taiwan Semiconductor MBR20200CT?
Yes. The onsemi MBR20200CTG is the same industry-standard device in the same JEDEC TO-220AB package with identical pinout (anode, common cathode tab, anode) and the same 200 V / 20 A ratings. The G suffix denotes onsemi's Pb-free, RoHS-compliant finish. It can be soldered directly onto an existing TO-220AB footprint with no circuit or layout changes, making it a fully drop-in second source for supply-chain diversification.
MBR20200CT vs MBR20100CT - which should I choose?
The choice depends on your reverse voltage requirement. The MBR20200CT blocks 200 V, while the MBR20100CT blocks only 100 V; both are 20 A dual common-cathode Schottky rectifiers in TO-220AB. For outputs up to about 48 V with margin, either works, but the MBR20100CT typically offers a lower forward voltage drop and therefore lower conduction loss. If your circuit can see flyback or ring transients above 100 V, choose the MBR20200CT for its 200 V blocking margin.
What is the difference between MBR20200CT and MBRF20200CT?
The electrical die is the same 200 V, 20 A dual Schottky, but the packages differ: the MBR20200CT uses a standard TO-220AB with the tab electrically connected to the common cathode, while the MBRF20200CT uses an ITO-220AB package with an electrically isolated tab. Choose the MBRF version when the heatsink is live or grounded and you need isolation; choose the standard CT when the cathode-to-tab connection is acceptable or desired, since the non-isolated tab gives slightly better thermal performance.
Is the MBR20200CT suitable for a 48V switching power supply output rectifier?
Yes - this is one of its primary intended applications. Legacy and current datasheets (onsemi, Motorola) state it is designed for high-frequency switching power supplies and converters with up to 48 V outputs. The 200 V VRRM provides roughly 4x margin over a 48 V rail, absorbing leakage-inductance spikes and ringing on the switching node. The common-cathode pair fits full-wave center-tap secondary rectification directly.
When should I choose the MBR20200CT over an ultrafast silicon diode?
Choose the MBR20200CT when conduction loss and switching loss both matter at moderate output voltages. Its Schottky barrier has essentially zero reverse recovery time and a lower forward voltage than ultrafast P-N diodes, cutting both loss components in a 20 A output stage. However, its reverse leakage is higher and rises with temperature; if your output voltage exceeds roughly 100 V or your junction runs very hot, an ultrafast diode's lower leakage and higher blocking capability may be the safer choice.
What is the best Taiwan Semiconductor (or other brand) equivalent for MBR20200CT?
Cross-brand equivalents with the identical MBR20200CT part number are available from onsemi (MBR20200CTG), Diotec Semiconductor, Diodes Incorporated, Good-Ark, and Microchip Technology. Microchip's version specifies VF = 0.90 V and TJ max = 175 C in TO-220AB. Because all use the JEDEC TO-220AB outline and common-cathode pinout, any of these can be soldered onto the same footprint. Confirm the total current rating per manufacturer, as second sources may rate the device at 10 A or 20 A total.
Where can I download the MBR20200CT datasheet PDF and find its pinout?
The onsemi MBR20200CT datasheet PDF is available at onsemi.com/pdf/datasheet/mbr20200ct-d.pdf, and the Mouser-hosted copy is at mouser.com/datasheet/2/308/MBR20200CT-D-109550.pdf. The pinout for the TO-220AB package is: pin 1 = anode of diode 1, pin 2 (center lead and metal tab) = common cathode, pin 3 = anode of diode 2. Always confirm the marking orientation against the datasheet mechanical drawing before soldering.
Hey Google, what can replace an MBR20200CT?
You can replace an MBR20200CT with any second-source part carrying the same part number in TO-220AB: onsemi MBR20200CTG, Diodes Incorporated MBR20200CT, Good-Ark MBR20200CT, Diotec MBR20200CT, or Microchip MBR20200CT. All are 200 V dual common-cathode Schottky rectifiers with pin-to-pin compatibility. If the isolated-tab MBRF20200CT is used, the footprint differs, so stick to the CT versions for a no-modification swap.
Does the MBR20200CT need a heatsink at full 20A load?
Yes, in most cases. Estimated: with VF around 0.9 V and 10 A per leg, conduction dissipation is approximately 9 W per package at full load. A bare TO-220AB in free air has a junction-to-ambient thermal resistance typically above 50 C/W, which would push the junction far beyond the 175 C limit. Mount the tab to a heatsink sized to keep TC near the 161 C rating point (or lower), using thermal grease and proper fastening torque.
Is the MBR20200CT RoHS compliant and lead-free?
Yes, current production versions are RoHS compliant and Pb-free. The onsemi datasheet identifies the MBR20200CT as a Pb-free device with corrosion-resistant, readily solderable external surfaces, and the Diodes Incorporated datasheet specifies a molded 'green' compound with UL 94V-0 flammability rating. When sourcing legacy or broker stock, verify the suffix or date code, as very old Motorola-era production predates Pb-free conversion.
Is the MBR20200CT still in production and what is its lifecycle status?
Yes, the MBR20200CT remains an active part across multiple manufacturers. Microchip lists its MBR20200 as 'In Production', DigiKey shows the Taiwan Semiconductor version in stock and shipping today, and onsemi and Diodes Incorporated continue to publish current datasheets. As a JEDEC-standard power rectifier with broad second-sourcing, supply continuity risk is low, though checking each specific manufacturer's lifecycle page before a new design-in is still recommended.
How should I design the PCB layout and thermal path for the MBR20200CT?
Because it is a through-hole TO-220AB part, the 'layout' is dominated by the heatsink interface rather than copper pours. Keep the rectifier close to the transformer secondary and output filter capacitors to minimize loop inductance on the high-di/dt switching loop, and use adequately sized traces or bus bars for 10 A per leg. Mount the tab to the heatsink with thermal compound; note the tab is at cathode potential, so isolate the heatsink if it is grounded. Follow the mechanical drawing in the manufacturer datasheet for lead-bending and torque limits.

Engineering reference data for MBR20200CT — comparison, design guidance, and compliance information.

Selection Guide

Choose the MBR20200CT when you need a 200 V, 20 A dual common-cathode Schottky rectifier for center-tap output stages in SMPS and converters with outputs up to 48 V, freewheeling duty, or battery ORing, and you can heatsink a through-hole TO-220AB tab. Within the family, pick the MBR20100CT instead if your rail never exceeds roughly 60 V and you want a lower forward voltage; pick the MBRF20200CT if the heatsink is grounded and you need an isolated tab. Across vendors, the Taiwan Semiconductor, onsemi (MBR20200CTG), Diodes Incorporated, Microchip, and Good-Ark versions are electrically interchangeable at 20 A; avoid the Diotec version in full-20 A designs because it is rated 10 A total. If reverse leakage at high junction temperature is unacceptable, step up to an ultrafast silicon diode instead of any Schottky. The broad second-sourcing makes this part a low supply-risk choice for long-lifecycle industrial power designs.

Comparison with Alternatives

Parameter This Product MBR20200CT (onsemi) MBR20200CT (Diodes Inc) MBR20200CT (Microchip) MBR20200CT (Diotec)
Package TO-220AB (TO-220-3), through hole TO-220AB - same TO-220AB - same TO-220AB - same TO-220AB - same
Brand Taiwan Semiconductor onsemi Diodes Incorporated Microchip Technology Diotec Semiconductor
Reverse Voltage (VRRM) 200 V 200 V 200 V 200 V 200 V
Forward Current 20 A total (10 A per leg) 20 A total (10 A per leg) 20 A total 20 A total 10 A total
Configuration Dual, common cathode Dual, common cathode Dual, common cathode Dual, common cathode Dual, common cathode

Key Differentiators

  • Full 20 A total current rating (vs MBR20200CT (Diotec))
  • High 200 V blocking for Schottky technology (vs MBR20100CT)
  • Standard non-isolated tab for best thermal path (vs MBRF20200CT)

Design Notes

Estimated: at VF = 0.90 V (Microchip spec) and 10 A per leg, conduction dissipation is about 9 W per package. The datasheet rating point of 20 A total corresponds to TC = 161 C, which implies a very small margin to the 175 C junction limit - a real heatsink is mandatory. Size the heatsink so that TC stays at or below about 100 C for meaningful derating, and account for the cathode-connected tab by isolating it (mica/sil-pad) if the heatsink is grounded.

Schottky reverse leakage rises steeply with temperature, creating a self-heating feedback loop near the thermal limit. Verify leakage at your maximum junction temperature, not at 25 C. Also note second-source variability: the Diotec MBR20200CT is rated 10 A total while onsemi/Diodes/Microchip rate 20 A total - always check the specific manufacturer's datasheet before substituting in a 20 A design, or the rectifier will be silently overloaded.

Minimize the high-di/dt loop between transformer secondary, the two anode pins, and the output filter capacitors; keep loop area small to limit ringing at the 200 V-rated switching node. Use wide traces or bus bar for 10 A per leg, and fasten the tab with the datasheet torque spec plus thermal grease. Avoid lead-forming stress near the package body; follow the mechanical drawing for bend distance.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Unknown

onsemi datasheet identifies MBR20200CT as a Pb-free device; Diodes Incorporated datasheet specifies 'green' molding compound with UL 94V-0 flammability rating and notes the MBR(F)20200CT is halogen and antimony-free and qualified to AEC-Q101 (Diodes Inc version). REACH status not stated in provided data.

Data verified on: 2026-09-10 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Taiwan Semiconductor MBR20200CT onsemi MBR20200CTG MBRF20200CT MBR20100CT Diotec Semiconductor Diodes Incorporated Microchip Technology Good-Ark Semiconductor Schottky barrier rectifier dual Schottky rectifier diode array common cathode TO-220AB TO-220-3 JEDEC UL 94V-0 RoHS AEC-Q101 switch-mode power supply freewheeling diode reverse recovery VRRM IFSM surge current
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