2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
MPN: 2ED2108S06FXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.5248 | $0.52 |
| 10 | $0.4723 | $4.72 |
| 100 | $0.4201 | $42.01 |
| 500 | $0.3805 | $190.25 |
| 1,000 | $0.3402 | $340.20 |
| 2,500 | $0.2987 | $746.75 |
2ED2108S06FXUMA1 Overview
A half-bridge gate driver is a power-management IC that translates low-power logic-level PWM signals from a controller (MCU, DSP, dedicated PFC/UVO controller) into high-current gate-drive waveforms for the high-side and low-side switches of a half-bridge, push-pull, or full-bridge power stage. The driver sits between the control IC and the power MOSFET/IGBT gates, providing level shifting, drive strength, shoot-through protection, and often an integrated bootstrap diode for the floating high-side supply. Half-bridge drivers belong to the broader category of gate drivers, which sit within the PMIC (Power Management IC) and power-semiconductor driver hierarchy.
Key features of the 2ED2108S06FXUMA1 include a built-in dead-time control block, undervoltage lockout (UVLO) for both VCC and VB rails, non-inverting logic inputs compatible with 3.3 V and 5 V controllers, and the integrated bootstrap diode that eliminates one external discrete component per design. The DSO-8 footprint is industry-standard, simplifying layout migration. These features allow compact, reliable half-bridge stages in switch-mode power supplies, motor drives, and lighting ballasts where PCB area is constrained.
The 2ED2108S06FXUMA1 uses Infineon's high-voltage level-shift technology to drive the high-side switch from a floating bootstrap supply referenced to the switching node (VS). Internal shoot-through prevention logic and matched propagation delays ensure predictable switching transitions up to several hundred kHz, reducing switching losses and EMI. The integrated bootstrap diode reduces BOM count and improves long-term reliability versus a discrete bootstrap diode that can fail under high dv/dt.
Typical applications include half-bridge and full-bridge converters in switch-mode power supplies (SMPS), motor-driver inverters for small BLDC fans and pumps, electronic ballasts for LED and fluorescent lighting, D-class audio amplifier output stages, and industrial low-power DC/AC inverters. Its 650 V rating provides comfortable margin for 230 VAC rectified (β325 V) and 400 V PFC-bus designs.
When designing with this driver, ensure VCC decoupling of at least 1 Β΅F X7R ceramic close to the IC, plus a 1 Β΅F to 10 Β΅F bulk capacitor on the bootstrap rail. Keep the high-side loop (VDD β bootstrap diode β HB pin β HS pin β power-MOSFET) as short as possible to minimize switching-node ringing and dv/dt-induced false triggering. A gate resistor of 10 Ξ© to 47 Ξ© is recommended to control ringing.
This page combines verified distributor pricing, structured drop-in alternatives from the Infineon EiceDRIVER family, application-specific companion MPNs, and practical design guidance not available on any single manufacturer or distributor page.
Drop-in alternatives for 2ED2108S06FXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2ED2108S06FXUMA1 (same form factor and footprint) β differing in Package, Configuration, Input Type, Number of Outputs, Number of Drivers.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
2ED2109S06FXUMA1
β Drop-Inπ Reference alternative (not in catalog)
2ED2182S06FXUMA1
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2ED2181S06FXUMA1
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2ED21834S06JXUMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.89 / Unit
View Datasheet β2ED2183S06FXUMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$1.05 / Unit
View Datasheet β2ED2108S06FXUMA1 Maximum Ratings & Electrical Characteristics
| Driver Configuration | Half-Bridge |
| Number of Drivers | 1 |
| Gate Type | N-Channel MOSFET, IGBT |
| Number of Outputs | 2 (high-side + low-side) |
| Logic Input | Non-Inverting |
| Input Voltage (VCC) | 10 V to 20 V |
| High-Side Bootstrap Voltage Rating | 650 V |
| Peak Source Current (typ.) | 0.29 A |
| Peak Sink Current (typ.) | 0.7 A |
| Integrated Bootstrap Diode | Yes |
| Undervoltage Lockout (UVLO) | Yes (VCC and VB) |
| Operating Temperature | -40 C to +125 C |
| Package | PG-DSO-8-53 (DSO-8) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS Status | Compliant |
2ED2108S06FXUMA1 Pin Configuration
| Pin 1 | HIN β Logic input for high-side gate driver (non-inverting) |
| Pin 2 | LIN β Logic input for low-side gate driver (non-inverting) |
| Pin 3 | VCC β Low-side and logic supply (10 V to 20 V) |
| Pin 4 | GND β Ground reference for VCC and LIN |
| Pin 5 | LO β Low-side gate drive output |
| Pin 6 | VS β High-side floating supply return (switching node) |
| Pin 7 | HO β High-side gate drive output |
| Pin 8 | VB β High-side floating bootstrap supply |
Typical Applications
2ED2108S06FXUMA1 is suitable for 6 applications: Half-Bridge SMPS Converters, BLDC Motor Drive Half-Bridge, LED and Fluorescent Ballast, D-Class Audio Amplifier Output Stage, Industrial DC/AC Inverter, PFC + Half-Bridge Power Supply.
Half-Bridge SMPS Converters
The 2ED2108S06FXUMA1 fits half-bridge switch-mode power supplies driving two N-channel MOSFETs from a 12 V logic supply. Its integrated bootstrap diode supplies the high-side floating rail directly from VCC through an internal high-voltage diode, eliminating one discrete component per design and reducing BOM cost in 24 V to 48 V DC-DC bus converters. With typical 0.29 A source and 0.7 A sink capability, the driver comfortably switches sub-TO-220 MOSFETs up to 200 kHz with a 10 Ξ© to 47 Ξ© gate resistor.
Recommended
BLDC Motor Drive Half-Bridge
In small BLDC and brushed DC motor inverters the 2ED2108S06FXUMA1 drives one half-bridge phase leg with non-inverting logic from a 3.3 V or 5 V MCU. The 650 V HB rating covers motor bus voltages up to 230 VAC rectified, supporting white-goods and industrial low-voltage motor control. Its 0.7 A sink current quickly commutates MOSFET gates, reducing dead-time and switching loss. Three 2ED2108S06FXUMA1 devices form a complete three-phase inverter footprint-compatible with the Infineon EiceDRIVER 2ED family.
Recommended
LED and Fluorescent Ballast
Electronic ballasts for LED drivers and fluorescent tubes rely on half-bridge resonant converters driven by complementary PWM signals. The 2ED2108S06FXUMA1 accepts 3.3 V logic-level HIN/LIN inputs and integrates the bootstrap diode, simplifying ballast design at 110 V to 230 VAC input. Its UVLO on VCC and VB prevents the half-bridge from switching under low-supply conditions, protecting the MOSFETs and reducing inrush stress on the lamp filament at cold start.
Recommended
D-Class Audio Amplifier Output Stage
Class-D audio amplifiers use a half-bridge output stage driven by complementary PWM signals. The 2ED2108S06FXUMA1's 0.29 A source and 0.7 A sink currents are well-matched to small-signal audio MOSFETs that switch at 250 kHz to 500 kHz. The integrated bootstrap diode and small PG-DSO-8 footprint support compact, low-cost stereo amplifier designs. Non-inverting logic input simplifies connection to popular audio PWM modulators.
Recommended
Industrial DC/AC Inverter
Low-power industrial DC-AC inverters for solar micro-inverters and small UPS systems use half-bridge stages driven by the 2ED2108S06FXUMA1. Its 650 V HB rating covers 400 V PFC bus and solar string voltages up to 600 V with adequate derating. The integrated dead-time control and matched propagation delays minimize shoot-through, a critical safety requirement in industrial inverters where bus short-circuits destroy MOSFETs instantly.
Recommended
PFC + Half-Bridge Power Supply
In CCM PFC plus half-bridge LLC or half-bridge converter topologies, the 2ED2108S06FXUMA1 drives the half-bridge primary side from a PFC controller. The integrated bootstrap diode and 650 V rating handle 400 V PFC bus rails directly. With 0.7 A sink current, the driver can switch high-Qg IGBTs in half-bridge induction-heating and welding inverter applications, where it pairs naturally with Infineon TRENCHSTOP IGBTs.
Recommended
Recommended Products Summary
Engineering reference data for 2ED2108S06FXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2ED2109S06FXUMA1 | 2ED2182S06FXUMA1 | 2ED2181S06FXUMA1 | 2ED21834S06JXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-8-53 | PG-DSO-8-53 - same | PG-DSO-8-53 - same | PG-DSO-8-53 - same | PG-DSO-8-53 - same | PG-DSO-8-53 - same |
| Driver Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge |
| Max HB Voltage | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V |
| VCC Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Peak Source Current (typ.) | 0.29 A | Higher | 0.29 A | 0.29 A | 0.29 A | 0.29 A |
| Peak Sink Current (typ.) | 0.7 A | Higher | 0.7 A | 0.7 A | 0.7 A | 0.7 A |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | Yes | Yes |
| Logic Input | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
Key Differentiators
- Integrated high-voltage bootstrap diode (vs Discrete bootstrap-diode designs (e.g., 2ED2106S06 + external diode))
- Compact PG-DSO-8-53 footprint shared across the 2ED-family (vs Discrete driver + bootstrap diode + level shifter)
- 650 V high-side rating with built-in UVLO on VCC and VB (vs Older 600 V half-bridge drivers without VB UVLO)
Design Notes
Estimated: at VCC = 15 V drawing a quiescent current of ~1 mA plus gate-charge current, a 2ED2108S06FXUMA1 pair switching 100 nC total gate charge at 100 kHz dissipates approximately 15 V Γ 1 mA + 100 kHz Γ 100 nC Γ 15 V β 0.165 W internal dissipation. Use a 1 Β΅F X7R ceramic bypass directly on VCC (pin 3) plus a 10 Β΅F bulk, and a 1 Β΅F to 10 Β΅F ceramic on the bootstrap rail (VB to VS) sized for β₯ 10Γ the total gate charge per switching cycle to avoid bootstrap droop at high duty cycles.
Keep the high-side gate-drive loop (VB capacitor β bootstrap diode β HB pin β HO gate resistor β MOSFET gate β MOSFET source β HS pin β back to VB capacitor) as small as physically possible. According to Infineon EiceDRIVER layout guidelines, this loop area should be under 1 cmΒ² to limit dv/dt-induced ringing. Place the gate resistor (10 Ξ© to 47 Ξ©) directly at the HO and LO pins, and use a wide ground pour under the IC tied to pin 4.
Do not allow the HS (pin 6) node to swing more than -5 V below ground during switching transients - large negative HS excursions can inject substrate current and latch up older gate drivers. Although the 2ED2108S06FXUMA1 has improved robustness, adding a small Schottky diode from HS to GND (or a 10 Ξ© RC snubber) is recommended for half-bridge designs with high dV/dt at the switching node. Also, ensure HIN and LIN are never asserted simultaneously (logic AND = shoot-through) - if the upstream controller lacks built-in dead time, insert 100 ns to 200 ns of gate-resistor delay or use the driver's built-in dead-time control.
At 0.165 W internal dissipation in PG-DSO-8-53 (estimated theta_JA ~150 C/W on 1 oz copper 1 sq-in pad), the junction temperature rises approximately 25 C above ambient - well within the -40 C to +125 C operating range. No additional heatsinking is required for normal operation. For continuous high-frequency switching above 500 kHz or 4-layer PCB with thermal via array, monitor VCC current to confirm safe operating area.
Compliance Information
RoHS and lead-free compliant per Infineon product page. Halogen-free status not explicitly stated in verified data; marked 'unknown' per authenticity rules. Not AEC-Q100 qualified; the standard part targets industrial and consumer applications.
