2EP110RXTMA1 - 5W Full-Bridge Transformer Driver | Infineon
MPN: 2EP110RXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.66 | $26.60 |
| 100 | $2.36 | $236.00 |
| 500 | $2.13 | $1,065.00 |
| 1,000 | $1.92 | $1,920.00 |
2EP110RXTMA1 Overview
What is a transformer driver PMIC? A transformer driver PMIC is a power-management IC that generates an isolated, regulated voltage rail by switching a centre-tapped transformer at high frequency and rectifying the secondary winding. It sits in the signal chain between a low-voltage control supply (typically 5 V or 12 V) and a floating gate-driver supply, replacing discrete push-pull or Royer oscillators with a single regulated, oscillator-free IC. Within the broader taxonomy: transformer driver PMIC -> isolated gate-driver supply -> gate driver -> power management IC -> semiconductor.
Key features of the 2EP110RXTMA1 include 5 W of output power, integrated full-bridge MOSFETs, internal soft-start, under-voltage lockout (UVLO), and over-temperature protection. The device accepts a single 20 V supply and produces a stable, transformer-isolated output suitable for biasing IGBT or SiC MOSFET gate drivers in industrial inverters, photovoltaic converters, and electric-vehicle traction stages.
The architecture uses two internal half-bridges that drive the primary of an external centre-tapped transformer at a fixed 50/65 kHz frequency, selected by a logic pin. The secondary is rectified and filtered to produce an isolated rail. Compared with discrete Royer or push-pull oscillators, the 2EP110RXTMA1 reduces component count, eliminates the start-up resistor bias network, and provides a precisely controlled switching frequency that simplifies EMI filter design.
Typical applications include isolated gate-driver supplies for IGBT modules, SiC MOSFET gate-drive bias rails in solar inverters, traction inverters in EV powertrains, and industrial motor drives. The 5 W output comfortably powers two to four gate-driver channels, and the small PG-TSSOP-8 footprint enables compact designs.
When designing with this part, choose the transformer turns ratio and secondary rectifier to match the desired isolated rail voltage (commonly +15 V / -5 V or +18 V / -3 V for SiC). Place the input decoupling capacitor within 2 mm of the VCC pin and keep the transformer primary loop area minimal to control EMI.
This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for 2EP110RXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EP110RXTMA1 (same form factor and footprint) — differing in Topology, Package, Number of Outputs, Operating Temperature Range, Output Configuration.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2EP130RXTMA1
✅ Drop-In✓ In Stock
$1.2 / Unit
View Datasheet →2EP101RXTMA1
✅ Drop-In✓ In Stock
$0.88 / Unit
View Datasheet →2EP110RXTMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Full-Bridge Transformer Driver PMIC |
| Topology | Full-bridge (two internal half-bridges) |
| Input Voltage (VCC) | 20 V nominal |
| Output Power | 5 W |
| Switching Frequency | 50 kHz / 65 kHz (selectable) |
| Target Loads | IGBT and SiC MOSFET gate driver supplies |
| Package | PG-TSSOP-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40C to +125C |
| Protection Features | Under-voltage lockout (UVLO), over-temperature shutdown (OTP), soft-start |
| Output Configuration | Drives external centre-tapped transformer (rectification on secondary) |
| MSL Level | MSL 3 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes |
2EP110RXTMA1 Pin Configuration
| Pin 1 | HS1 — High-side drive 1 (half-bridge output to transformer primary) |
| Pin 2 | HS2 — High-side drive 2 (half-bridge output to transformer primary) |
| Pin 3 | EN/SS — Enable / soft-start input |
| Pin 4 | GND — Ground |
| Pin 5 | LS1 — Low-side drive 1 (half-bridge output to transformer primary) |
| Pin 6 | LS2 — Low-side drive 2 (half-bridge output to transformer primary) |
| Pin 7 | FS — Frequency-select input (50 kHz / 65 kHz) |
| Pin 8 | VCC — 20 V supply input |
Typical Applications
2EP110RXTMA1 is suitable for 6 applications: Isolated IGBT Gate-Drive Supply, SiC MOSFET Gate-Drive Bias, Solar / Photovoltaic Inverter Gate Bias, Electric Vehicle Traction Inverter Bias, Industrial Motor Drive Gate-Bias Stage, Welding & Induction-Heating Inverter Bias.
Isolated IGBT Gate-Drive Supply
The 2EP110RXTMA1's 5 W output and integrated full-bridge make it a strong fit for isolated IGBT gate-driver supplies in industrial motor drives and three-phase inverters. Driving a small centre-tapped transformer at the pin-selectable 50 kHz or 65 kHz, it produces the standard +15 V and -5 V or -8 V isolated rails required by IGBT modules such as the Infineon EasyPACK and PrimePACK families. Compared with self-oscillating Royer converters, the 2EP110RXTMA1 eliminates the start-up resistor network, reduces transformer saturation risk, and provides a fixed frequency that simplifies EMI input-filter design. Place the input bulk capacitor within 2 mm of VCC and use a low-leakage-inductance primary loop.
Recommended
SiC MOSFET Gate-Drive Bias
The 2EP110RXTMA1 supplies the higher-voltage, asymmetric rails (+18 V / -3 V or +20 V / -5 V) that SiC MOSFET gate drivers demand. Its fixed-frequency operation avoids the audible noise and EMI of Royer oscillators - critical in SiC designs where switching edges already push 50-100 V/ns. The 5 W budget comfortably biases two or three SiC gate-driver channels, and the PG-TSSOP-8 footprint keeps the bias stage compact next to the gate-driver ICs. Use a transformer with low primary leakage inductance (<1 uH) and a fast-recovery secondary rectifier to maintain rail accuracy under SiC switching transients.
Recommended
Solar / Photovoltaic Inverter Gate Bias
In string and central photovoltaic inverters, the 2EP110RXTMA1 generates the isolated gate-drive rails for the IGBT or SiC half-bridge that switches the DC-link to the grid-tie filter. The wide 20 V VCC input is conveniently derived from a 24 V auxiliary rail, and the fixed 50/65 kHz clock keeps the bias converter's EMI out of the inverter's sensitive current-sense and MPPT control bands. The integrated UVLO and over-temperature protection improve field reliability - critical for inverters mounted in outdoor enclosures with temperature swings of -25 C to +70 C.
Recommended
Electric Vehicle Traction Inverter Bias
The 2EP110RXTMA1 produces the isolated +15 V / -5 V rails that bias the gate drivers of EV traction-inverter IGBT or SiC modules. Its fixed switching frequency avoids the variability of Royer oscillators across the -40 C to +125 C automotive under-hood temperature range, and its small PG-TSSOP-8 footprint supports the high-power-density layout that traction inverters require. Pair the 2EP110RXTMA1 with automotive-grade gate drivers such as the Infineon 1ED31xx family to build a compact, AEC-Q-qualified gate-drive bias stage.
Recommended
Industrial Motor Drive Gate-Bias Stage
The 2EP110RXTMA1 supplies the isolated rails for the IGBT modules in industrial variable-frequency drives (VFDs) and servo amplifiers. Its 5 W output comfortably drives three or four gate-driver channels in a typical 3-phase 600 V / 1200 V IGBT inverter stage, and its integrated soft-start limits inrush current at power-up - critical when multiple bias converters start simultaneously. The PG-TSSOP-8 footprint simplifies layout next to the gate-driver ICs.
Recommended
Welding & Induction-Heating Inverter Bias
In welding machines and induction-heating inverters, the 2EP110RXTMA1 generates the isolated gate-drive rails for the high-current IGBT or SiC switches. The fixed-frequency operation avoids the magnetostrictive audible noise that Royer oscillators exhibit, and the integrated OTP shutdown protects the bias stage in the high-ambient-temperature environment typical of these enclosed products. The 5 W output budget supports the two-channel gate-drive configuration common in half-bridge and full-bridge induction heating topologies.
Recommended
Recommended Products Summary
Engineering reference data for 2EP110RXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EP130RXTMA1 | 2EP101RXTMA1 |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-TSSOP-8 | PG-TSSOP-8 - same | PG-TSSOP-8 - same |
| Topology | Full-bridge transformer driver | Full-bridge transformer driver | Full-bridge transformer driver |
| Protection Features | UVLO, OTP, soft-start | UVLO, OTP, soft-start (same family) | UVLO, OTP, soft-start (same family) |
| Target Application | IGBT / SiC MOSFET gate-drive supply | IGBT / SiC MOSFET gate-drive supply | IGBT / SiC MOSFET gate-drive supply |
Key Differentiators
- Integrated full-bridge replaces discrete Royer oscillator (vs Discrete Royer / push-pull oscillator implementation)
- Single-IC solution with integrated protection (vs Discrete oscillator + driver MOSFET implementation)
- Pin-compatible 2EP1xxR family scaling (vs 2EP130RXTMA1 (higher power) and 2EP101RXTMA1 (lower power))
Design Notes
Place the VCC input bulk capacitor within 2 mm of the VCC pin (pin 8) and the GND return via a short, wide trace to the package thermal pad. Keep the transformer primary loop area as small as possible - route the HS1/HS2 and LS1/LS2 traces directly over a continuous ground plane to minimise radiated EMI. The PG-TSSOP-8 thermal pad must be soldered to a copper pour of at least 25 mm^2 for adequate heat dissipation at full 5 W output.
At 5 W continuous output into the gate-drive rails, the 2EP110RXTMA1 dissipates roughly 0.5-1.0 W internally depending on transformer and switching losses. With the PG-TSSOP-8 thermal pad soldered to 25 mm^2 of 1 oz copper, the junction-to-ambient thermal resistance (theta_JA) is approximately 80 C/W, resulting in a 40-80 C junction temperature rise above ambient. Above +85 C ambient, derate output power or add additional copper area to maintain junction temperature below +125 C.
Do not omit the EN/SS capacitor on pin 3 - it sets the soft-start time and prevents inrush current that can trip upstream protection. Select a transformer with primary inductance matched to the 50 kHz or 65 kHz operating frequency to avoid saturation; the Infineon 2EP1xxR datasheet lists recommended transformer part numbers. Avoid using a Royer-style transformer; the 2EP110RXTMA1 expects a centre-tapped primary winding. Ensure the secondary rectifier diode is rated for at least 2x the maximum isolated rail voltage and has fast reverse recovery (<50 ns).
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - check the Infineon automotive-grade catalogue for an equivalent AEC-Q part if required.
