BSZ215CHXTMA1 - 20V N+P Complementary MOSFET | Infineon
MPN: BSZ215CHXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.72 | $7.20 |
| 100 | $0.58 | $58.00 |
| 500 | $0.49 | $245.00 |
| 1,000 | $0.42 | $420.00 |
| 3,000 | $0.36 | $1,080.00 |
BSZ215CHXTMA1 Overview
What is a complementary MOSFET array? A complementary MOSFET array integrates an N-channel and a P-channel enhancement-mode MOSFET within a single package, allowing designers to implement half-bridge, full-bridge, or push-pull switching topologies without placing two discrete transistors. As part of Infineon's OptiMOS low-voltage family, these parts sit within the broader MOSFET taxonomy: MOSFET -> enhancement-mode FET -> power semiconductor -> discrete semiconductor, and serve as fundamental building blocks of power conversion.
Key features of the BSZ215CHXTMA1 include OptiMOS technology for low on-state resistance, enhancement-mode operation, AEC-Q101 automotive qualification, 100% lead-free construction, full RoHS compliance, and avalanche-rated ruggedness. The complementary die architecture allows circuit designers to use a single part for both high-side and low-side switches in synchronous converters, reducing PCB area, BOM count, and parasitic inductance.
The BSZ215CHXTMA1 belongs to Infineon's low-voltage OptiMOS family, the market leader in high-efficiency solutions for power generation (solar micro-inverters), power supply (servers and telecom), and electric vehicle power consumption. Maximum on-state resistance is 55 mOhm on each channel (per Infineon product brief), with low gate charge enabling fast switching transitions suitable for high-frequency DC-DC converters above 1 MHz.
Typical applications include synchronous buck/boost DC-DC converters, half-bridge motor drive stages, battery protection circuits, load switching, USB Type-C power delivery switches, and PoL (Point-of-Load) regulators in telecom and server systems. The combination of small package footprint and complementary channels enables compact power designs where board real estate is at a premium.
When designing with this part, place both input and bootstrap capacitors as close to the gate and source pins as possible to minimize parasitic inductance, and ensure the gate-drive voltage respects the Vgs(th) rating of both channels. The exposed pad must be soldered to a sufficiently large copper pour to keep junction temperature within the -55C to +150C operating range.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a single source for selection, sourcing, and design-in guidance.
Drop-in alternatives for BSZ215CHXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSZ215CHXTMA1 (same form factor and footprint) — differing in Package, FET Type, Drain-Source Voltage (Vds), Operating Temperature Range, Part Number.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSZ0901NSIATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.34 / Unit
View Datasheet →BSZ0501NSIATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.29 / Unit
View Datasheet →BSZ215CHXTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS |
| FET Type | N-Channel and P-Channel Complementary |
| Drain-Source Voltage (Vds) | 20 V |
| Continuous Drain Current - N-channel (Id) | 5.1 A |
| Continuous Drain Current - P-channel (Id) | 3.2 A |
| Power Dissipation (Pd) | 2.5 W |
| Technology | OptiMOS (enhancement mode) |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| Lead-Free | Yes (100% lead-free) |
| Avalanche Rated | Yes |
BSZ215CHXTMA1 Pin Configuration
| Pin 1 | S1 — N-channel source |
| Pin 2 | G1 — N-channel gate |
| Pin 3 | S2 — P-channel source |
| Pin 4 | G2 — P-channel gate |
| Pin 5 | D2 — P-channel drain |
| Pin 6 | D2 — P-channel drain |
| Pin 7 | D1 — N-channel drain |
| Pin 8 | D1 — N-channel drain |
Safe Operating Area (per channel)
Typical Applications
BSZ215CHXTMA1 is suitable for 6 applications: Synchronous Buck/Boost DC-DC Converter, Half-Bridge Motor Drive Stage, Battery Protection and Load Switching, USB Type-C Power Delivery Switch, Point-of-Load (PoL) Regulator for Telecom/Server, Solar Micro-Inverter Power Stage.
Synchronous Buck/Boost DC-DC Converter
The BSZ215CHXTMA1's complementary N+P MOSFET architecture is purpose-built for synchronous buck and boost converters, where the N-channel typically switches the high-side and the P-channel the low-side (or vice versa depending on topology). The 5.1A N-channel and 3.2A P-channel current ratings support point-of-load rails up to ~3A continuous, while the 20V Vds rating provides comfortable headroom for 12V input rails. OptiMOS low Rds(on) minimizes conduction losses, and the small PG-TSDSON-8 footprint enables compact converters under 100mm^2. Engineers commonly pair this part with gate drivers like the IRS2104STRPBF for half-bridge control.
Recommended
Half-Bridge Motor Drive Stage
In half-bridge motor drive stages for small DC motors and steppers, the BSZ215CHXTMA1 provides both the high-side and low-side switches in a single package, replacing two discrete transistors with one. The 5.1A N-channel handles the high-side switching while the 3.2A P-channel drives the low-side return path, supporting motors up to ~2A continuous with proper PWM duty cycle management. AEC-Q101 qualification makes the part suitable for automotive motor control applications such as HVAC actuators, mirror adjusters, and small pump drives. The 2.5W power dissipation capability requires PCB thermal management for sustained operation.
Recommended
Battery Protection and Load Switching
The BSZ215CHXTMA1 enables reverse battery protection and load disconnect circuits in 1S-2S Li-ion battery packs. The N-channel handles high-current load switching up to 5.1A while the P-channel provides reverse polarity blocking when configured appropriately. AEC-Q101 qualification supports automotive battery management, and the 20V Vds rating comfortably exceeds 2S Li-ion peak voltages (8.4V fully charged). The exposed thermal pad allows direct heat sinking to the battery housing or PCB ground plane for sustained current handling.
Recommended
USB Type-C Power Delivery Switch
The BSZ215CHXTMA1 is well-suited for USB Type-C Power Delivery (PD) source and sink switches where VBUS voltage can reach 20V and load currents up to 5A. The N-channel handles 5V/3A VBUS sourcing while the P-channel provides ground return switching or reverse current blocking. PG-TSDSON-8 package fits within the tight PCB area of USB Type-C connectors and small PD trigger boards. OptiMOS technology minimizes heat generation at high current, supporting USB PD 3.1 SPR (Standard Power Range) applications.
Recommended
Point-of-Load (PoL) Regulator for Telecom/Server
In telecom and server Point-of-Load (PoL) regulators, the BSZ215CHXTMA1 provides efficient synchronous rectification for 12V-to-1V/1.8V/3.3V conversion rails powering FPGAs, ASICs, and DDR memory. The complementary topology reduces BOM count by combining high-side and low-side switches in one PG-TSDSON-8 package, freeing PCB area for high-density server designs. OptiMOS technology achieves >90% efficiency at typical PoL load currents, reducing thermal stress and supporting the long-life requirements of telecom infrastructure.
Recommended
Solar Micro-Inverter Power Stage
Micro-inverters for residential solar panels operate at low DC bus voltages (typically 20-40V) where the BSZ215CHXTMA1 can serve as the switching element in push-pull or full-bridge topologies. The complementary N+P architecture simplifies gate drive design and enables high-frequency switching (above 100 kHz) for compact transformer-based inversion. OptiMOS low switching losses and AEC-Q101 qualification support long-lifetime outdoor solar installations. The 2.5W power dissipation is suitable for micro-inverter stages below 100W output power.
Recommended
Recommended Products Summary
Engineering reference data for BSZ215CHXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSZ0901NSIATMA1 | BSZ0501NSIATMA1 |
|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3) | PG-TSDSON-8 - same | PG-TSDSON-8 - same |
| Topology | N+P complementary | Single N-channel | Single N-channel |
| Drain-Source Voltage (Vds) | 20 V | 30 V | 30 V |
| Continuous Drain Current (P-ch, Id) | 3.2 A | N/A (single N-channel) | N/A (single N-channel) |
| Power Dissipation | 2.5 W | 2.5 W | 2.5 W |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Complementary N+P topology in one package (vs BSZ0901NSIATMA1)
- AEC-Q101 automotive qualification with OptiMOS technology (vs BSZ0501NSIATMA1)
- Compact PQFN 3.3x3.3 mm footprint (vs BSZ0901NSIATMA1)
Design Notes
Estimated: At continuous 5.1A on the N-channel with 2.5W power dissipation and PG-TSDSON-8 thermal resistance, the junction-to-ambient temperature rise requires substantial PCB copper. Solder the exposed thermal pad to a copper pour of at least 1 square inch (645 mm^2) on top and bottom layers with thermal vias. Without adequate heat sinking, sustained high current operation will exceed the 150C maximum junction temperature.
Place gate-drive resistors (typically 10-100 ohm) as close to the gate pins as possible to minimize parasitic inductance in the gate loop. Use a star-ground connection from the source pins to the controller ground to prevent switching noise from coupling into the gate drive. Keep the high-dV/dt drain traces away from sensitive analog traces to avoid EMI coupling.
In synchronous buck/boost layouts using BSZ215CHXTMA1, minimize the high-current loop area between the N-channel drain and the P-channel source to reduce parasitic inductance that causes voltage overshoot and switching losses. Use wide copper pours (50 mil or wider) for high-current paths and place the input/output ceramic capacitors (10-22uF X7R) directly across the drain-source terminals.
Do not exceed the 20V Vds absolute maximum - even brief transients from inductive loads can destroy the device. Add a TVS diode or snubber across the drain-source if switching inductive loads. Verify gate drive voltage does not exceed the Vgs maximum rating (typically +/-20V for OptiMOS); use a gate-source Zener clamp if the gate drive can overshoot.
Compliance Information
AEC-Q101 qualified per Infineon product brief. 100% lead-free and RoHS compliant per DigChip datasheet. Halogen-free status not explicitly stated in verified data - set to unknown.
