CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments
MPN: CSD13302W ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.45 | $0.45 |
| 10 | $0.38 | $3.80 |
| 100 | $0.29 | $29.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
Drop-in alternatives for CSD13302W — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
CSD15571Q2
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.19 / Unit
View Datasheet →CSD13301W
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
CSD13303W
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
CSD13304W
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
CSD13305W
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
CSD13306W
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
CSD13307W
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
CSD13308W
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
CSD13302W Maximum Ratings & Electrical Characteristics
| Technology | NexFET |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 12 V |
| Continuous Drain Current (ID) | 1.6 A (Ta=25°C) |
| On-Resistance (RDS(on)) | 14.6 mΩ (typ) at VGS=4.5V |
| Gate Charge (Qg) | 4.1 nC at VGS=4.5V |
| Threshold Voltage (VGS(th)) | 0.9 V |
| Maximum Gate-Source Voltage | ±8 V |
| Power Dissipation (PD) | 1.8 W (Ta=25°C) |
| Package | 4-DSBGA (1x1) |
| Mounting Type | Surface Mount |
| Height | 0.4 mm |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Operating Temperature Range | -55°C to +150°C |
CSD13302W Pin Configuration
| Pin A1 | G — Gate |
| Pin A2 | S — Source |
| Pin B1 | D — Drain |
| Pin B2 | D — Drain |
Safe Operating Area
Typical Applications
CSD13302W is suitable for 6 applications: Load Switching in Portable Electronics, Battery Protection, DC-DC Converter Synchronous Rectification, Power Management in Wearables, IoT Devices, Audio Amplifier Power Switching.
Load Switching in Portable Electronics
The CSD13302W is ideal for load switching in smartphones, tablets, and wearables due to its ultra-small 1x1mm package and low on-resistance of 14.6mΩ. It minimizes power loss and PCB area, enabling efficient power gating. The low threshold voltage (0.9V) allows direct control from low-voltage logic, simplifying the design. In this role, the MOSFET acts as a series switch, disconnecting the load when not in use to save battery life. The low gate charge (4.1nC) ensures fast switching, reducing transition losses. Thermal performance is adequate for typical load currents up to 1.6A, provided the PCB has sufficient copper area for heat spreading.
Recommended
Battery Protection
In battery management systems, the CSD13302W is used for overcurrent and overvoltage protection. Its low on-resistance (14.6mΩ) minimizes voltage drop and power dissipation, ensuring efficient battery operation. The small package fits compact battery packs. The MOSFET is placed in series with the battery and load, and is turned off during fault conditions. The low threshold voltage allows direct connection to protection ICs. The device's 12V rating is suitable for single-cell Li-ion batteries. Thermal management is critical during high-current faults, but the 1.8W power dissipation rating provides adequate margin for typical protection scenarios.
Recommended
DC-DC Converter Synchronous Rectification
The CSD13302W is used as a low-side MOSFET in synchronous buck converters for portable devices. Its low gate charge (4.1nC) and low on-resistance (14.6mΩ) reduce switching and conduction losses, improving efficiency. The small package is ideal for space-constrained power stages. In this application, the MOSFET is driven by a controller IC, and its fast switching speed minimizes dead time. The 12V rating is suitable for 5V and 3.3V rails. The device's thermal performance is adequate for typical load currents, but proper PCB layout with thermal vias is essential for high-current operation.
Recommended
Power Management in Wearables
The CSD13302W is well-suited for power management in wearables like smartwatches and fitness trackers. Its ultra-small 1x1mm package and low profile (0.4mm) fit thin device designs. The low on-resistance (14.6mΩ) ensures efficient power delivery, extending battery life. The device can be used for load switching, battery protection, and power rail switching. The low threshold voltage (0.9V) allows direct control from low-voltage microcontrollers. The 1.8W power dissipation is sufficient for the low power requirements of wearables. The device's RoHS compliance and lead-free construction meet environmental standards.
Recommended
IoT Devices
In IoT devices, the CSD13302W is used for power gating and load switching to minimize standby power consumption. Its low gate charge (4.1nC) and low on-resistance (14.6mΩ) are ideal for battery-powered applications. The small package is suitable for compact IoT modules. The device can be driven directly by GPIO pins of low-power microcontrollers. The 12V rating covers typical IoT power rails. The thermal performance is adequate for the low currents in IoT devices. The device's small footprint allows for dense PCB layouts, which is critical for miniaturized IoT sensors and nodes.
Recommended
Audio Amplifier Power Switching
The CSD13302W can be used for power switching in audio amplifiers, where clean power delivery is essential. Its low on-resistance (14.6mΩ) minimizes voltage drops, ensuring stable supply rails. The small package is suitable for compact audio devices. The device can be used to switch power to different audio sections, reducing noise. The low gate charge (4.1nC) enables fast switching, which is beneficial for power sequencing. The 12V rating is suitable for audio amplifier supply voltages. The device's thermal performance is adequate for the moderate currents in audio applications.
Recommended
Recommended Products Summary
Engineering reference data for CSD13302W — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | CSD15571Q2 | CSD13301W | CSD13303W |
|---|---|---|---|---|
| Package | 4-DSBGA (1x1) | 4-DSBGA (1x1) | 4-DSBGA (1x1) | 4-DSBGA (1x1) |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Drain-Source Voltage (VDS) | 12 V | 20 V | 12 V | 12 V |
| Continuous Drain Current (ID) | 1.6 A | 3 A | 1.8 A | 1.2 A |
| On-Resistance (RDS(on)) | 14.6 mΩ | 20 mΩ | 13.5 mΩ | 20 mΩ |
| Gate Charge (Qg) | 4.1 nC | 5.5 nC | 4.5 nC | 3.8 nC |
| Threshold Voltage (VGS(th)) | 0.9 V | 1.0 V | 0.9 V | 0.9 V |
| Power Dissipation (PD) | 1.8 W | 2.5 W | 2.0 W | 1.5 W |
Key Differentiators
- Ultra-small 1x1mm package (vs CSD15571Q2)
- Lower on-resistance (vs CSD13303W)
- Lower gate charge (vs CSD15571Q2)
Design Notes
The CSD13302W in the 4-DSBGA package relies on the PCB copper for heat dissipation. For continuous operation at 1.6A, ensure at least 1 square inch of copper area on the drain pad and use multiple thermal vias to the ground plane. The thermal resistance from junction to ambient is approximately 70°C/W, so at 1.8W dissipation, the junction temperature rise is about 126°C above ambient. For high ambient temperatures, derate the current accordingly.
Place the CSD13302W close to the load or switch node to minimize parasitic inductance. Use short, wide traces for the drain and source connections. The gate trace should be kept short and away from high-current paths to avoid noise coupling. A 10kΩ gate resistor can be added to reduce ringing, but it will slow down switching. For high-frequency switching, use a gate driver with appropriate drive strength.
Do not exceed the maximum gate-source voltage of ±8V. The low threshold voltage (0.9V) means the device can be partially turned on by noise, so ensure the gate is pulled low when off. Also, the WLP package is sensitive to mechanical stress; avoid bending the PCB near the device. For battery protection, consider the device's reverse current capability, as it is not designed for body diode conduction in reverse.
Compliance Information
RoHS compliant and lead-free per TI product page. REACH and conflict minerals status not specified in the provided data.
