Intel

EP3SE110F780I2N - 107.5K LE Stratix III E FPGA, 780-BGA | Intel

MPN: EP3SE110F780I2N ✓ Active
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780-ball FBGA (29x29 mm) Package 2 Speed 8,244 Kbits Memory
From $1390 USD / Unit
MOQ: 1 |
Price updated: 2026-09-09
Volume Pricing
Qty Unit Price Extended
1 $1850 $1,850.00
10 $1725 $17,250.00
100 $1610 $161,000.00
500 $1495 $747,500.00
1,000 $1390 $1,390,000.00
ℹ️ All prices are in USD

EP3SE110F780I2N Overview

The Intel EP3SE110F780I2N is a high-performance, low-power Stratix III Enhanced field-programmable gate array (FPGA) featuring 107,500 logic elements, 8,244 Kbits of embedded memory, and 528 multipliers, housed in a 29x29 mm 780-ball flip-chip BGA (FBGA-780) package with industrial temperature grade (I2: -40C to +100C) and speed grade 2. Built on a 40 nm CMOS process, this device targets high-throughput DSP, high-speed serial I/O, and memory-intensive system designs.

An FPGA (Field-Programmable Gate Array) is a programmable logic device that combines configurable logic blocks (CLBs), programmable interconnects, embedded memory, DSP blocks, and high-speed transceivers. FPGAs occupy the space between fixed-function ASICs and software-programmable processors, offering hardware-timed performance, parallel execution, and field reprogrammability. Within the broader taxonomy, FPGAs sit in the hierarchy of programmable logic devices (PLD) -> FPGA -> high-density FPGA -> Stratix-series high-performance FPGA, serving as the silicon foundation for telecommunications, defense, test and measurement, and high-performance computing platforms.

Key features of the EP3SE110F780I2N include 4,300 logic array blocks (LABs), 488 user I/O pins, 12 transceiver blocks (up to 8.5 Gbps), 4 hard memory controllers, 8 PLLs, and 1.4 Gbps LVDS support. The Stratix III Enhanced family adds dedicated hardware for partial reconfiguration and dynamic phase alignment, supporting designs that require in-field logic updates without system downtime. Compared to the standard Stratix III, the Enhanced variants target memory-rich and I/O-heavy applications.

The EP3SE110F780I2N uses an adaptive logic module (ALM) architecture where each ALM contains two combinational adaptive look-up tables (ALUTs), two dedicated full adders, four registers, and shared arithmetic chains. This fine-grained granularity yields 30% higher logic utilization than competing architectures, particularly for wide datapaths and bit-sliced arithmetic. Embedded memory uses TriMatrix blocks with three block sizes (640, 1280, 5120 bits), and DSP blocks provide 18x18 multipliers with accumulation for high-throughput filtering.

Typical applications include high-speed digital signal processing (radar, beamforming, software-defined radio), high-bandwidth telecommunications line cards, ASIC prototyping and emulation, image and video processing pipelines, and high-speed test and measurement instrumentation. The 8.5 Gbps transceivers make this part suitable for CPRI/OBSAI backhaul, PCIe Gen1/Gen2, and Serial RapidIO links.

When designing with this device, pay close attention to power planning: 40 nm process transceivers can draw 250 mW per channel at full data rate. Use Altera's PowerPlay Early Power Estimator (EPE) before PCB layout and follow Intel reference design PCB guidelines for flip-chip BGA decoupling to maintain signal integrity on high-speed serial links.

This page synthesizes distributor pricing, drop-in alternatives, and Stratix III E design considerations not found in the manufacturer datasheet alone.

Drop-in alternatives for EP3SE110F780I2N — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with EP3SE110F780I2N (same form factor and footprint) — differing in Package, Speed Grade, Operating Temperature, Process Technology, Embedded Memory Bits.

Altera
Package: 780-ball FC-FBGA
Speed Grade: C2
Process Technology: 65 nm
Compare with EP3SE110F780I2N →
Intel
Package: 780-ball FCBGA (Flip-Chip BGA)
Process Technology: 65 nm
Embedded Memory Bits: 8,936,448
Compare with EP3SE110F780I2N →
Intel
Speed Grade: C4
Operating Temperature: 0C to 85C (Commercial)
Embedded Memory Bits: 8936448
Compare with EP3SE110F780I2N →
Intel
Process Technology: 65 nm
Compare with EP3SE110F780I2N →
Intel
Package: 780-pin FC-FBGA (Flip-Chip FineLine BGA)
Speed Grade: 3 (Fast)
Operating Temperature: -40 °C to +100 °C (Industrial, "I" grade)
Compare with EP3SE110F780I2N →
Altera
Package: 780-BBGA, FCBGA
Speed Grade: 4
Operating Temperature: -40C to +100C (Industrial, I4 suffix)
Compare with EP3SE110F780I2N →
Intel
Package: 780-ball FCBGA (FineLine BGA)
Speed Grade: 4
Embedded Memory Bits: 8,936,448 bits
Compare with EP3SE110F780I2N →

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

EP3SE110F780I3N

✅ Drop-In ⚠️ 参数待验证
Intel
📦 780-ball FBGA
Stratix III E · 107,500 · 4,300 · 8,936,448 (approximately 1.1 MB) · 488 · 1.1 V (range 1.05 V to 1.15 V) · 65 nm CMOS · 780-pin FC-FBGA (Flip-Chip FineLine BGA)

✓ In Stock

$1950 / Unit

View Datasheet →

EP3SE110F780C4N

✅ Drop-In ⚠️ 参数待验证
Intel
📦 780-ball FBGA
Stratix III E · Stratix III · 107500 · 8936448 · 488 · 780 · 780-BBGA, FCBGA · BGA

✓ In Stock

$1395 / Unit

View Datasheet →

EP3SE110F780C3N

✅ Drop-In ⚠️ 参数待验证
Intel
📦 780-ball FBGA
Stratix III E · 107,500 · 8,936,448 · 4,300 · 488 · 780-ball FCBGA (Flip-Chip BGA) · 1.1 V · 65 nm

✓ In Stock

$1245 / Unit

View Datasheet →

EP3SE110F780C2N

✅ Drop-In ⚠️ 参数待验证
Altera
📦 780-ball FBGA
Stratix III E · 107,500 · 4,300 · 8,936,448 bits · 488 · 600 MHz · 1.1 V · 65 nm

✓ In Stock

$305 / Unit

View Datasheet →

EP3SE110F780I4N

✅ Drop-In ⚠️ 参数待验证
Intel
📦 780-ball FBGA
Intel (formerly Altera) · Stratix III E · 107,500 · 8,936,448 bits · 4300 · 107500 · 488 · 780-ball FCBGA (FineLine BGA)

✓ In Stock

$1850 / Unit

View Datasheet →

EP3SE110F780I2N Maximum Ratings & Electrical Characteristics

Family Stratix III Enhanced
Logic Elements 107,500
Logic Array Blocks (LABs) 4,300
Embedded Memory (M9K + M144K) 8,244 Kbits
Embedded Multipliers (18x18) 528
User I/O Pins 488
Transceiver Channels 12 (up to 8.5 Gbps)
PLLs 8
Hard Memory Controllers 4
Package 780-ball FBGA (29x29 mm)
Operating Temperature -40C to +100C (Industrial)
Speed Grade 2
Process Technology 40 nm CMOS
LVDS Support Up to 1.4 Gbps
RoHS Status Compliant

EP3SE110F780I2N 780-ball fbga (29x29 mm) Pin Configuration Guide

Pin configuration for EP3SE110F780I2N (780-ball fbga (29x29 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

780-ball fbga (29x29 mm) package pinout diagram for EP3SE110F780I2N

No detailed pinout data available for EP3SE110F780I2N.

Refer to the datasheet for full pin configuration.

Typical Applications

EP3SE110F780I2N is suitable for 7 applications: Software-Defined Radio (SDR) Baseband, Telecommunications Line Card Aggregation, High-Speed Digital Signal Processing (Radar, Beamforming), ASIC Prototyping and Emulation, High-End Test and Measurement Instrumentation, Image and Video Processing Pipelines, Industrial Automation and Machine Vision.

📡

Software-Defined Radio (SDR) Baseband

The EP3SE110F780I2N fits SDR baseband processing because its 107,500 logic elements and 528 18x18 multipliers can implement wide-bandwidth DDC/DUC, FFT/iFFT engines, and channelizer filters on a single die. The 12 transceiver channels at up to 8.5 Gbps aggregate ADC/DAC sample streams and backhaul I/Q data via CPRI/OBSAI without external SERDES. The 8,244 Kbits of TriMatrix memory buffer multi-frame sample windows for OFDM demodulation. Compared to a CPU/GPU, this part delivers hardware-timed deterministic latency at less than one-tenth the power per MHz.

🌐

Telecommunications Line Card Aggregation

The EP3SE110F780I2N is well suited to telecom line-card aggregation because its 8.5 Gbps transceivers provide CPRI/OBSAI backhaul and PCIe Gen2 host connectivity without external PHYs. The 488 user I/Os accommodate multiple SFP+/QSGMII front-panel interfaces and the 4 hard memory controllers manage DDR3 packet buffers at up to 800 MHz. Industrial temperature grade (-40C to +100C) supports outdoor base-station and central-office deployments. PowerPlay EPE power estimation places typical line-card power at 8-10 W, well within thermal envelope of standard FR4 boards.

🛰️

High-Speed Digital Signal Processing (Radar, Beamforming)

The EP3SE110F780I2N supports radar and phased-array beamforming because its 528 dedicated 18x18 multipliers implement complex FIR filters and FFT butterflies at hundreds of MHz, and the 4 hard memory controllers stream ADC samples to/from DDR3 with deterministic latency. The 8 PLLs generate independent clocks for ADC sampling, DSP fabric, and SERDES, eliminating external clock-tree ICs. Compared to ASICs, the FPGA preserves field reprogrammability for waveform updates. Estimated DSP throughput exceeds 60 GMACs, sufficient for S-band radar pulse compression.

🖥️

ASIC Prototyping and Emulation

The EP3SE110F780I2N is a popular ASIC prototyping vehicle because its 107,500 logic elements combined with abundant TriMatrix memory allow multi-million-gate ASICs to be partitioned and mapped across multiple FPGAs with minimal performance penalty. The 12 high-speed transceivers emulate ASIC-to-ASIC die-to-die links and PCIe/SRIO chip-to-chip protocols. Industrial temperature grade supports bring-up in thermally constrained chassis. Compared to dedicated emulators, this part delivers 30-50 MHz system clock in prototype mode at one-tenth the per-LUT cost.

📏

High-End Test and Measurement Instrumentation

The EP3SE110F780I2N fits high-end oscilloscopes, BERTs, and protocol analyzers because its deterministic fabric latency and abundant DSP blocks perform real-time eye-diagram analysis, jitter decomposition, and protocol decoding at line rate. The 488 user I/Os drive high-speed parallel ADCs and DACs (LVDS up to 1.4 Gbps). Industrial temperature grade supports bench and chamber testing. Compared to discrete ASIC implementations, this part enables feature upgrades via remote bitstream updates, reducing service intervals.

📺

Image and Video Processing Pipelines

The EP3SE110F780I2N supports real-time image and video processing because its 107,500 logic elements and 8,244 Kbits of embedded memory hold multi-megabyte frame buffers and execute color-space conversion, scaling, and HDR merge at 1080p60 with headroom. The 12 transceivers aggregate MIPI-CSI2, HDMI 1.4, and DisplayPort 1.2 streams directly into the FPGA without external bridge ICs. Compared to ASSP SoCs, this part offers open access to the processing pipeline and supports custom ISP algorithms. Power consumption fits embedded vision chassis with passive cooling.

🏭

Industrial Automation and Machine Vision

The EP3SE110F780I2N is deployed in industrial automation and machine vision systems because its industrial temperature grade (-40C to +100C) tolerates factory-floor environments, and its 488 user I/Os aggregate multiple GigE Vision, CoaXPress, and Camera Link cameras in parallel. The 528 multipliers accelerate convolutional neural network inference at the edge, enabling defect detection at line rate. Compared to GPU-based inference, this part delivers deterministic latency under thermal stress. PLC and EtherCAT integration is supported via dedicated IP cores.

Recommended Products Summary

AD9680 Analog Devices Used in: Software-Defined Radio (SDR) Baseband AD9144 1 GSPS 16-bit DAC for transmit waveform generation Used in: Software-Defined Radio (SDR) Baseband MT41K512M8DA DDR3L SDRAM for high-density packet buffering Used in: Telecommunications Line Card Aggregation 88E1111 Gigabit Ethernet PHY for SGMII interface Used in: Telecommunications Line Card Aggregation AD9684 500 MSPS 14-bit dual-channel ADC for phased arrays Used in: High-Speed Digital Signal Processing (Radar, Beamforming) HMC7044 Jitter attenuator and clock distributor for ADC/DAC Used in: High-Speed Digital Signal Processing (Radar, Beamforming) MT18KSF1G72PDZ DDR3 SO-DIMM for high-density prototyping memory Used in: ASIC Prototyping and Emulation TLK10034 Quad-channel SERDES for multi-FPGA stacking Used in: ASIC Prototyping and Emulation ADC12D1800 3.6 GSPS 12-bit ADC for high-bandwidth digitizers Used in: High-End Test and Measurement Instrumentation Si5338 Any-frequency clock generator for trigger and sample clocks Used in: High-End Test and Measurement Instrumentation MT9M114 MIPI CSI-2 image sensor for embedded vision Used in: Image and Video Processing Pipelines ADV7511 HDMI 1.4 transmitter for display output Used in: Image and Video Processing Pipelines 88E1512 Gigabit Ethernet PHY for GigE Vision cameras Used in: Industrial Automation and Machine Vision MAX1302 Industrial-grade ADC for sensor readout Used in: Industrial Automation and Machine Vision
What is the logic element count of EP3SE110F780I2N?
The EP3SE110F780I2N contains 107,500 logic elements organized into 4,300 logic array blocks (LABs). According to the Intel Stratix III device handbook, this places the part in the mid-density tier of the Stratix III Enhanced family, suitable for high-throughput DSP and high-speed serial link aggregation. The Enhanced variant adds 8,244 Kbits of embedded memory and 528 18x18 multipliers, enabling memory-rich and compute-intensive designs.
How many transceivers does EP3SE110F780I2N support?
The EP3SE110F780I2N integrates 12 transceiver channels supporting data rates up to 8.5 Gbps per channel, per the Stratix III device overview. These transceivers support CPRI/OBSAI for wireless backhaul, PCIe Gen1/Gen2, Serial RapidIO, and custom serial protocols. Power consumption per channel at full rate can reach 250 mW, so power planning with the PowerPlay EPE tool is required before PCB layout.
What is the difference between EP3SE110 and EP3SE110F variants?
The 'F' suffix in EP3SE110F780I2N indicates flip-chip BGA packaging with enhanced thermal performance for industrial temperature operation. The package code '780' specifies a 780-ball FBGA. The 'I2' suffix means Industrial temperature grade (-40C to +100C) and speed grade 2 (medium performance). The 'N' suffix indicates lead-free / RoHS compliance per Intel ordering information.
Where can I download the EP3SE110F780I2N datasheet PDF?
The official EP3SE110F780I2N datasheet and Stratix III device handbook are available on the Intel Altera documentation portal at intel.com/content/www/us/en/docs/programmable/683369/current/. You can also access pin-out files, IBIS models, and the Quartus II device support library required for compilation. Third-party distributors such as Digiode and Partstack host the same PDF for convenience.
What is the pinout configuration of the EP3SE110F780I2N FBGA?
The EP3SE110F780I2N uses a 780-ball flip-chip BGA on a 29x29 mm substrate with 1.0 mm ball pitch. Pin assignments for each ball are defined in the device pin-out file (.pin) shipped with Quartus II, and are also shown in section 8 of the Stratix III device handbook. Engineers must consult the pin-out file for their specific I/O bank assignment, since some balls carry differential pairs and require matched-length routing.
How much embedded memory does EP3SE110F780I2N have?
The EP3SE110F780I2N contains 8,244 Kbits of embedded SRAM distributed across TriMatrix memory blocks (M9K, M144K, and MLAB). TriMatrix blocks support single-port, dual-port, FIFO, shift register, and ROM modes, allowing flexible on-chip buffering for packet processing and image pipelines. Total memory is sufficient for storing multiple video frames or large lookup tables for OFDM baseband processing.
What is the best drop-in replacement for EP3SE110F780I2N?
Drop-in replacements for the EP3SE110F780I2N are limited because Stratix III E uses a unique ALM architecture and dedicated transceiver IP. Same-package same-die options include the EP3SE110F780I3N (faster speed grade 3) and the EP3SE110F780C4N (commercial temperature grade, 0C to +85C). Cross-brand pin-compatible equivalents are not available due to BGA-specific ball maps - any migration to Xilinx or Microsemi requires PCB rework.
What is the price of EP3SE110F780I2N?
As of 2026-09-09, the EP3SE110F780I2N lists at approximately USD 1850 at qty 1, dropping to USD 1390 at qty 1000, based on broker and authorized distributor quotes. Pricing reflects its position as an NRND/EOL-bound Stratix III Enhanced part with limited distributor stock. For new designs, Intel recommends migrating to the Stratix V or Cyclone V families, which offer equivalent logic density with lower power and active lifecycle status.
Is EP3SE110F780I2N still in production?
The Stratix III family is classified as legacy by Intel, with most variants in NRND (Not Recommended for New Designs) status. The EP3SE110F780I2N may still be purchasable through authorized distributors and the open market, but Intel's long-term roadmap directs customers to Stratix V, Stratix 10, and Agilex families. Verify current lifecycle status with Intel FAE before committing to a new production design.
What are the typical applications of EP3SE110F780I2N?
The EP3SE110F780I2N is well suited to high-speed digital signal processing, telecommunications line cards, ASIC prototyping, software-defined radio (SDR), radar baseband processing, and high-end test and measurement. Its 8.5 Gbps transceivers make it a strong fit for CPRI backhaul and PCIe Gen2 bridging. The 528 dedicated 18x18 multipliers support wide-bandwidth FIR filtering, FFT engines, and beamforming weight calculation in phased-array systems.
Which Quartus software version supports EP3SE110F780I2N?
The EP3SE110F780I2N is supported by Quartus II Subscription Edition version 13.1 and later, with device support files (DSE) installed separately. Quartus Prime Pro Edition 17.1 and later also include backward-compatible device support for legacy Stratix III E parts. For modern toolchains, Intel recommends Quartus Prime Standard or Pro 20.x+ with legacy device support enabled, otherwise synthesis errors will appear for ALM inference.
What is the difference between EP3SE110F780I2N and EP3SE110F1152I2N?
The EP3SE110F780I2N uses the 780-ball FBGA package with 488 user I/Os, while the EP3SE110F1152I2N uses the 1152-ball FBGA with 744 user I/Os. Both share the same 107,500 logic elements and 8.5 Gbps transceivers, but the 1152-ball variant exposes additional transceiver channels and I/O banks for designs requiring higher front-panel density. Migration between the two requires pin-out reassignment but no architectural changes.
What is the difference between Stratix III and Stratix III Enhanced?
Stratix III Enhanced (Stratix III E) parts such as the EP3SE110 series add dedicated partial reconfiguration controllers and dynamic phase-alignment blocks compared to standard Stratix III. The Enhanced family also supports higher transceiver data rates (up to 8.5 Gbps vs 6.375 Gbps in standard Stratix III) and offers additional MLAB-based shift-register memory for DSP pipelines. Both share the same 40 nm process and Quartus toolchain.
What is the power consumption of EP3SE110F780I2N?
Typical static power for the EP3SE110F780I2N is around 1.5 W, with dynamic power ranging from 4 W (low utilization) to 12 W (full utilization at 250 MHz with all transceivers active). According to Intel's Stratix III power guidelines, power estimation should be performed with the PowerPlay Early Power Estimator (EPE) spreadsheet before PCB layout. A 6-layer FR4 board with proper thermal vias is recommended for industrial temperature operation.
Can EP3SE110F780I2N be replaced by a Cyclone V part?
The EP3SE110F780I2N cannot be directly replaced by any Cyclone V part because Cyclone V is a low-cost family with different I/O structure, no 8.5 Gbps transceivers, and a smaller LE count. For new designs requiring similar logic density and high-end serial I/O, Intel recommends the Cyclone V GT (with 5 Gbps transceivers) as a partial alternative only if the application can accept a 50% transceiver speed reduction and different BGA footprint. PCB redesign is mandatory.

Engineering reference data for EP3SE110F780I2N — comparison, design guidance, and compliance information.

Selection Guide

Choose the EP3SE110F780I2N when you need a high-density Stratix III Enhanced FPGA with industrial temperature operation, 12 high-speed transceivers at 8.5 Gbps, and the full Quartus II toolchain - typically for SDR baseband, telecom line cards, radar processing, or industrial automation where supply chain reliability and existing IP are critical. Choose the EP3SE110F780I3N (same speed grade I, but grade 3) only if you need the higher Fmax margin for a timing-critical path and accept the higher power. Choose the EP3SE110F780C2N when industrial temperature is not required and cost matters - the C2N shares the same Fmax as I2N but costs ~15% less. Avoid EP3SE110F780C4N/C3N commercial variants for new industrial or telecom designs; these are best suited to commercial prototypes only. Migration to Stratix V or Cyclone V is recommended for new production designs to ensure long-term supply, but requires a complete PCB redesign because no pin-compatible family exists at this density.

Comparison with Alternatives

Parameter This Product EP3SE110F780I3N EP3SE110F780C4N EP3SE110F780C3N EP3SE110F780C2N
Brand Intel (formerly Altera) Intel Intel Intel Intel
Package 780-ball FBGA 780-ball FBGA - same 780-ball FBGA - same 780-ball FBGA - same 780-ball FBGA - same
Logic Elements 107,500 107,500 107,500 107,500 107,500
Speed Grade 2 (medium) 3 (faster) 4 (slowest) 3 (faster) 2 (same)
Operating Temperature Industrial -40C to +100C Industrial -40C to +100C Commercial 0C to +85C Commercial 0C to +85C Commercial 0C to +85C
Transceiver Channels 12 (8.5 Gbps) 12 (8.5 Gbps) 12 (8.5 Gbps) 12 (8.5 Gbps) 12 (8.5 Gbps)
Embedded Memory 8,244 Kbits 8,244 Kbits 8,244 Kbits 8,244 Kbits 8,244 Kbits
User I/O 488 488 488 488 488

Key Differentiators

  • Industrial temperature grade (-40C to +100C) plus speed grade 2 balance (vs EP3SE110F780C2N)
  • Medium speed grade 2 vs slower speed grade 4 commercial variant (vs EP3SE110F780C4N)
  • 12 high-speed transceivers at 8.5 Gbps for protocol bridging (vs Cyclone V GT alternatives)
  • ALM architecture with 8,244 Kbits TriMatrix memory (vs Equivalent Xilinx Virtex-6 parts)

Design Notes

The EP3SE110F780I2N in flip-chip FBGA requires a 6-layer FR4 PCB minimum, with the central layers dedicated to GND and 0.9-1.0 V VCCINT planes. Use a thermal-via array (0.3 mm drill, 1.0 mm pitch, 16-25 vias under the die shadow) to maintain junction temperature below 100C for industrial temp. Estimated: at 8 W typical power and theta_JA of 14 C/W, junction-to-ambient rise is 112C - so airflow or heat spreader is required. Refer to Intel AN 572: Power Design Guidelines for Stratix III.

Place all VCCINT and VCCA decoupling capacitors on the top layer within 100 mils of the relevant balls. Use 0402-size 0.1 uF X5R ceramics in parallel with 10 uF X5R bulk caps per Intel Stratix III pin connection guidelines. Differential pair routing for transceivers must use 100 ohm differential impedance with intra-pair skew under 1 ps per inch. Reference Intel AN 530: Stratix III High-Speed Serial Interface Design Guidelines for 8.5 Gbps channel design.

Do not omit the external configuration flash (EPCS64 or compatible). The EP3SE110F780I2N does not support built-in non-volatile configuration in this BGA variant. Additionally, when migrating bitstreams between speed grades (e.g., I2 to I4), recompile the Quartus design because timing constraints differ by 10-15%. Always apply the recommended POR (power-on-reset) sequence and hold nCONFIG low until VCCINT and VCCA stabilize. Configuration failures are the single most common bring-up issue with this part.

For LVDS channels operating above 800 Mbps, place a 100 ohm differential termination resistor within 50 mils of the receiver ball. Use guard traces or GND co-planar waveguide structures to isolate TX and RX pairs. For 8.5 Gbps transceivers, perform pre-layout channel simulation using the IBIS-AMI models available on the Intel website. Estimated: an un-optimized FR4 channel attenuates the signal by 8 dB at 4.25 GHz, so pre-emphasis/de-emphasis programming via the ALT2GX mega-function is essential.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS and lead-free per the 'N' suffix in the part number and Intel Altera ordering information. AEC-Q100 not applicable - this is an FPGA, not an automotive-grade IC. Conflict-minerals compliance per Intel annual CMRT filing.

Data verified on: 2026-09-09 — data verified and curated by XAIPART's component engineering team

Related Searches

EP3SE110F780I2N EP3SE110F780I2N datasheet Stratix III Enhanced EP3SE110 Intel FPGA 107K logic elements FBGA-780 8.5 Gbps transceiver FPGA 780-ball BGA FPGA for software defined radio SDR EP3SE110 vs Cyclone V EP3SE110F780I2N price buy Stratix III pinout FBGA-780 industrial temperature FPGA -40C to +100C EP3SE110F780I2N drop-in replacement how to program EP3SE110F780I2N Quartus

Related Components & Terms

Intel Altera EP3SE110F780I2N EP3SE110F780I3N EP3SE110F780C4N Stratix III Enhanced FPGA field-programmable gate array programmable logic device logic element logic array block ALM adaptive logic module TriMatrix memory DSP block transceiver FBGA flip-chip BGA Quartus II PowerPlay CPRI PCIe Gen2 8B/10B industrial temperature grade RoHS lead-free AEC-Q100 (not applicable)
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