IPB120P04P404ATMA1 - 40V P-Ch 120A 3.5mΩ OptiMOS | Infineon
MPN: IPB120P04P404ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.84 | $184.00 |
| 500 | $1.55 | $775.00 |
| 1,000 | $1.32 | $1,320.00 |
| 3,000 | $1.18 | $3,540.00 |
IPB120P04P404ATMA1 Overview
A P-channel power MOSFET is a voltage-controlled minority-carrier device in which a negative gate-source voltage inverts the P-channel surface to conduct majority-carrier hole current between source and drain. P-channel MOSFETs sit in the discrete-semiconductor hierarchy as: power MOSFET -> MOSFET (Metal Oxide Semiconductor FET) -> FET -> transistor -> discrete semiconductor. They are valued in high-side load switching because, with source tied to the system positive rail, a simple ground-referenced low-side gate driver can switch the rail without a charge pump or bootstrap, simplifying the gate drive architecture compared to a comparable N-channel device used in the same position.
Key differentiating features of the IPB120P04P404ATMA1 include its very low RDS(on) of 3.5 mΩ at -10 V VGS, enabling conduction losses below 1 W at 30 A continuous load; its AEC-Q101 automotive qualification supporting under-the-hood and body-electronics deployments; its 175 °C maximum junction temperature allowing operation in thermally constrained environments; and its PG-TO263-3 footprint that exposes the die tab for top-side PCB cooling. The OptiMOS-P2 cell technology also reduces gate charge and output capacitance relative to older P-channel generations, allowing faster switching edges at modest driver strength.
Technically, the part is a single P-channel enhancement-mode device with built-in body diode, normal VGS(th) level (typical -2 V to -4 V at 340 µA), and Green-package (RoHS-compliant) bill of materials. Its SOA is bounded by 136 W continuous dissipation at Tc and 78 mJ single-pulse avalanche energy, meaning repetitive avalanche must be thermally derated.
Typical applications include automotive 12 V/24 V high-side load switches (e.g., ECU power, body control modules), DC-DC converters using P-channel high-side switches, motor drive H-bridges and reverse-battery protection blocks, hot-swap controllers in 24 V industrial buses, and OR-ing FETs in redundant power architectures.
When designing with this part, ensure that the gate is pulled at least 10 V below source during full conduction and that VGS is never allowed to exceed ±20 V. Because it is a P-channel device, gate-source ESD sensitivity is somewhat higher than N-channel equivalents; place a 10 kΩ to 100 kΩ resistor from gate to source to hold the device off during controller reset.
This page synthesizes distributor pricing for IPB120P04P404ATMA1, Infineon OptiMOS-P2 family drop-in alternatives in PG-TO263-3, and practical design notes that complement the manufacturer datasheet.
Drop-in alternatives for IPB120P04P404ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB120P04P404ATMA1 (same form factor and footprint) — differing in Mounting Type, Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB120P04P4L03ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB120P04P404ATMA2
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IPI50N10S3L-26ATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPB120P04P404ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide), Enhancement Mode, OptiMOS-P2 |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc | 120 A |
| On-State Resistance (RDS(on)) | 3.5 mΩ at VGS = -10 V, ID = -100 A |
| Gate-Source Threshold Voltage (VGS(th)) | -4 V at ID = -340 µA (max) |
| Total Gate Charge (Qg) | 205 nC at VGS = -10 V |
| Reverse Transfer Capacitance (Crss) | 14.79 nF at 25 V |
| Continuous Power Dissipation (PD) at Tc | 136 W |
| Single-Pulse Avalanche Energy (EAS) | 78 mJ |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-TO263-3 (D2PAK), 3-pin (2 + tab), surface mount |
| MSL Level | MSL1 (260 °C peak reflow) |
| AEC-Q100/101 Qualification | AEC-Q101 qualified |
| Avalanche Tested | 100 % avalanche tested |
| RoHS / Green | Green package, RoHS compliant |
| Mounting Type | Surface Mount (D2PAK, exposed tab) |
IPB120P04P404ATMA1 Pin Configuration
| Pin 1 | GATE — MOSFET gate control input (drive to source to turn off; pull to ground relative to source at VIN to turn on) |
| Pin 2 | DRAIN — MOSFET drain; internally connected to the metal tab on the top of the package |
| Pin 3 | SOURCE — MOSFET source; tied to system positive rail in P-channel high-side applications |
Safe Operating Area (DC)
Typical Applications
IPB120P04P404ATMA1 is suitable for 6 applications: Automotive 12 V High-Side Load Switch, Reverse-Battery Protection Block, 24 V Industrial Hot-Swap / OR-ing FET, P-Channel H-Bridge Motor Drive (Low-Voltage), Battery Management System (BMS) Discharge Path, DC-DC Converter High-Side Switch (Buck Topology).
Automotive 12 V High-Side Load Switch
The IPB120P04P404ATMA1 is a natural fit for 12 V automotive high-side load switches driving body-control loads such as headlamp modules, seat heaters, and ECU power rails. Its P-channel configuration places the source at the battery + rail, eliminating the need for a charge pump or bootstrap circuit that an N-channel high-side switch would require. With RDS(on) of 3.5 mΩ at VGS = -10 V, a continuous 30 A load dissipates only ~3.2 W, easily managed by the D2PAK tab on 1 oz copper. AEC-Q101 qualification and 175 °C Tj rating allow placement in under-hood or engine-bay modules. The part also tolerates 24 V jump-start events since 40 V VDS exceeds 24 V transients with margin.
Recommended
Reverse-Battery Protection Block
In a reverse-battery protection topology, the IPB120P04P404ATMA1 sits between the battery clamp and the downstream load with source tied to VBAT+ and drain to the load. During normal polarity, the gate is held near ground so VGS ≈ -12 V, fully enhancing the channel and dropping only milliohms. If the battery is reversed, VGS becomes positive and the P-channel stays off, blocking potentially damaging reverse current. The 40 V VDS rating absorbs load-dump transients up to ~35 V. Compared to a Schottky-diode solution, the MOSFET cuts conduction loss from ~0.5 V to a few mV, dramatically improving efficiency in always-on systems such as eCall modules and battery-monitoring ECUs.
Recommended
24 V Industrial Hot-Swap / OR-ing FET
The IPB120P04P404ATMA1 is used as a hot-swap or OR-ing MOSFET in 24 V industrial power systems where its 40 V VDS comfortably exceeds the 28 V upper rail with margin for transients. In an OR-ing topology, two power supplies are diode-OR'd through back-to-back P-channel MOSFETs to share redundancy without diode losses. The 3.5 mΩ RDS(on) reduces OR-ing dissipation compared to a Schottky solution by more than 90%, allowing higher continuous current in the same footprint. AEC-Q101 qualification also makes it suitable for industrial battery-backed systems that must meet automotive-grade reliability. The D2PAK tab provides the thermal headroom for sustained 50-80 A operation with adequate copper.
Recommended
P-Channel H-Bridge Motor Drive (Low-Voltage)
In low-voltage H-bridge motor drives (e.g., 12 V DC brushed motors, valve actuators, seat adjusters), the IPB120P04P404ATMA1 can serve as the high-side switch in each half-bridge, paired with an N-channel low-side device. Its 120 A continuous rating exceeds typical motor stall currents, and its 78 mJ avalanche rating absorbs the inductive kickback from motor winding commutation when paired with a suitable TVS clamp. The P-channel high-side avoids the need for a bootstrap capacitor or charge pump, simplifying the gate drive. Use a dedicated gate driver such as the IR2304SPBF or 2ED21064S06JXUMA1 for fast switching edges to minimize switching loss in PWM-driven applications.
Recommended
Battery Management System (BMS) Discharge Path
The IPB120P04P404ATMA1 is used in lithium-ion BMS discharge paths where it sits in series with the pack and acts as a software-controlled disconnect switch. With 120 A continuous rating, it supports high-power packs used in mild-hybrid vehicles, e-bikes, and 48 V mild-hybrid architectures. The P-channel source-on-pack-top topology lets the BMS microcontroller pull the gate to ground to enable and pull it to source to disable, with no charge pump required. The 3.5 mΩ RDS(on) keeps full-load conduction loss in single-digit watts even at 100 A continuous. AEC-Q101 qualification and 175 °C Tj make it suitable for under-the-hood BMS units.
Recommended
DC-DC Converter High-Side Switch (Buck Topology)
In a P-channel high-side buck converter for 12 V to 3.3 V/5 V rails, the IPB120P04P404ATMA1 acts as the switching element, with the source at VIN and the drain at the LC filter. P-channel high-side buck converters eliminate the bootstrap circuit required by N-channel solutions, allowing simple low-side gate drivers and reducing BOM cost. The 205 nC Qg is manageable at switching frequencies up to ~200 kHz with a dedicated gate driver. The 40 V VDS provides ample margin against 24 V transients. For higher-frequency designs above 500 kHz, an N-channel high-side with bootstrap remains preferable despite the extra drive complexity.
Recommended
Recommended Products Summary
Engineering reference data for IPB120P04P404ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB120P04P4L03ATMA1 | IPB120P04P404ATMA2 |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| FET Type | P-Channel | P-Channel | P-Channel |
| VDS (Drain-Source Voltage) | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID) at Tc | 120 A | 120 A | 120 A |
| RDS(on) at VGS = -10 V | 3.5 mΩ | ~4.5 mΩ | 3.5 mΩ (same die) |
| Continuous Power Dissipation (PD) at Tc | 136 W | 136 W | 136 W |
| AEC-Q101 Qualification | Yes | Yes | Yes |
| Operating Junction Temperature | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
Key Differentiators
- Lowest RDS(on) in Infineon 40 V P-channel D2PAK family (vs IPB120P04P4L03ATMA1)
- OptiMOS-P2 cell technology with lower Qg than older P-channel generations (vs IPB120P04P4L03ATMA1)
- AEC-Q101 qualified for automotive deployment (vs IRF4905 (TO-220))
Design Notes
Estimated: at VIN = 12 V, continuous ID = 30 A, RDS(on) = 3.5 mΩ at -10 V VGS, conduction loss is P = I²·R = 30²·0.0035 ≈ 3.15 W. With the D2PAK tab soldered to a 1 oz copper pour of at least 1 square inch on a 4-layer FR-4 PCB, junction-to-ambient thermal resistance (θJA) is roughly 35-40 °C/W, giving a 110-125 °C temperature rise above 25 °C ambient. This is comfortably within the 175 °C Tj limit. For continuous loads above ~50 A, increase the copper area to 2-3 square inches or add an explicit heatsink on top of the tab to keep Tj below 150 °C for long-term reliability.
Solder the D2PAK tab to a copper pour on the top layer of the PCB, using multiple thermal vias (typically 9-16 vias at 0.3 mm drill) to conduct heat to inner layers and the bottom copper pour. Minimize the source-to-gate trace length because excessive parasitic inductance combined with the gate-source capacitance (Ciss) can cause Miller-induced turn-on during fast drain voltage transitions. Place a 10 kΩ to 100 kΩ pull-up resistor from gate to source on the PCB to hold the MOSFET off during MCU reset or loss of gate drive; this prevents unintended turn-on in P-channel high-side configurations.
Do not drive the gate with a voltage higher than ±20 V relative to source. Do not allow VDS to exceed 40 V even transiently; pair with a TVS clamp (e.g., SMBJ33A) for inductive loads such as motors and solenoids to absorb flyback energy. The body diode of a P-channel MOSFET conducts in the reverse direction; if used in a half-bridge, account for its slow reverse recovery (trr typically >50 ns) and consider an external Schottky in parallel for hard-switching applications.
The IPB120P04P404ATMA1 specifies VGS(th) at -4 V max (at ID = -340 µA); for full enhancement and minimum RDS(on), drive VGS to at least -10 V. Below -6 V VGS, RDS(on) increases by 50% or more, so a true 12 V gate drive is strongly recommended. Use a dedicated gate driver (e.g., IR2304SPBF or 2ED21064S06JXUMA1) rather than driving directly from an MCU GPIO, because the 205 nC total gate charge requires source/sink currents of 0.5-1 A for sub-100 ns switching edges.
Compliance Information
AEC-Q101 (automotive discrete semiconductor) qualified per Infineon product family datasheet excerpts. Green-package (RoHS compliant). MSL1 rated for 260 °C peak reflow. Halogen-free status not explicitly listed in the verified data.
