IPB120P04P404ATMA2 - 40V P-Channel 120A OptiMOS MOSFET | Infineon
MPN: IPB120P04P404ATMA2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.56 | $25.60 |
| 100 | $2.18 | $218.00 |
| 500 | $1.84 | $920.00 |
| 1,000 | $1.62 | $1,620.00 |
IPB120P04P404ATMA2 Overview
A P-channel MOSFET is a type of field-effect transistor in which the conductive channel is formed by holes rather than electrons. P-channel devices simplify high-side load switching because the source is tied to the positive rail and a gate voltage pulled toward ground turns the device on, eliminating the charge pump or bootstrap circuitry required by N-channel high-side drivers. P-channel MOSFETs occupy the power MOSFET -> discrete semiconductor -> power management hierarchy, and they are the traditional choice for load switching, reverse-battery protection, and high-side ORing in 12V/24V automotive and industrial systems.
Key features of this part include the OptiMOS-P2 trench process which minimizes FOM (RDS(on) x Qg), a logic-level compatible -10V/-20V gate drive range, low thermal resistance junction-to-case (RthJC < 1 C/W typical), and avalanche-rated single-pulse robustness. The 3.8 mOhm RDS(on) figure reduces conduction loss versus prior-generation P-channel parts, while the -20V VGS(max) rating provides headroom against inductive transients and gate over-drive. The PG-TO263-3-2 package is footprint-compatible with industry-standard D2PAK, allowing direct replacement or upgrade in existing layouts.
Architecturally, the device uses Infineon's trench MOSFET cell technology to achieve a low figure-of-merit, with a body diode optimized for third-quadrant conduction. The result is a part that competes effectively with both discrete P-channel MOSFETs and integrated high-side switches in efficiency-critical designs. Performance is optimized for switching frequencies in the 50 kHz to 500 kHz range commonly used in synchronous buck, buck-boost, and motor-drive topologies.
Typical applications include high-side load switching in automotive ECUs, reverse-polarity protection in 12V/24V industrial battery systems, DC-DC converter high-side switches, motor drive H-bridges, hot-swap controllers, ORing FETs in redundant power architectures, and battery management systems. The part is widely used in power tools, e-bike controllers, USB-PD source controllers, and telecom DC distribution.
When designing with this part, ensure VGS never exceeds +/-20V, account for self-heating at high continuous loads, and use Kelvin-source sensing if available. The exposed tab (tab = drain) must be soldered to a copper pour of at least 1 square inch to achieve rated power dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IPB120P04P404ATMA2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB120P04P404ATMA2 (same form factor and footprint) β differing in Mounting Type, Package, Technology.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPB120P04P404ATMA1
β Drop-Inβ In Stock
$1.18 / Unit
View Datasheet βIPP120P04P404AKSA1
β Drop-Inπ Reference alternative (not in catalog)
NTD2955T4G
β Drop-Inπ Reference alternative (not in catalog)
SUM110N04-04-E3
β Drop-Inπ Reference alternative (not in catalog)
BSC0804NS
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IPB120P04P404ATMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPB120P04P404ATMA2 |
| Series | OptiMOS-P2 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) @ Tc=25C | 120 A |
| On-Resistance (RDS(on)) @ VGS=-10V, ID=-100A | 3.8 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Total Gate Charge (Qg) @ VGS=-10V | 205 nC |
| Input Capacitance (Ciss) @ VDS=25V | 14,790 pF |
| Power Dissipation (PD) @ Tc=25C | 136 W |
| Operating Temperature Range | -55 C to +175 C (TJ) |
| Package | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Tab + 2 Leads) |
| RoHS Status | Compliant |
IPB120P04P404ATMA2 Pin Configuration
| Pin 1 | Gate β MOSFET gate input, drive with -10V for full enhancement |
| Pin 2 | Drain β MOSFET drain, internally connected to the exposed tab |
| Pin 3 | Source β MOSFET source, tied to positive supply rail for high-side switching |
| Pin Tab | Drain (Tab) β Exposed tab, electrically connected to Pin 2 (Drain); must be soldered to copper pour for thermal dissipation |
Safe Operating Area
Typical Applications
IPB120P04P404ATMA2 is suitable for 6 applications: Automotive High-Side Load Switching, Reverse-Polarity Protection, DC-DC Converter High-Side Switch, Motor Drive H-Bridge High-Side, Hot-Swap and ORing Controller, Battery Management Systems (BMS).
Automotive High-Side Load Switching
The IPB120P04P404ATMA2 is well suited for high-side load switching in 12V automotive ECUs, where it drives lamps, solenoids, and motor loads directly from the battery rail. Its P-channel configuration eliminates the need for a charge pump or bootstrap driver required by N-channel high-side MOSFETs, simplifying gate-drive circuitry. With 3.8 mOhm RDS(on) at VGS=-10V, conduction loss is approximately 0.46W at 11A continuous load - low enough to operate without a heatsink at moderate ambient temperatures. The 40V VDS rating provides 5V transient margin above the 35V automotive load-dump spec, making it robust against jump-start and inductive kickback transients.
Recommended
Reverse-Polarity Protection
The IPB120P04P404ATMA2 placed between the battery+ terminal and the load provides robust reverse-polarity protection for 12V/24V industrial battery systems. Because the P-channel MOSFET is normally on (VGS=0) with source tied to V+, current passes freely during normal operation. When polarity reverses, the source drops below ground and VGS becomes positive, switching the MOSFET off within microseconds. The 3.8 mOhm RDS(on) introduces only 38mV drop at 10A, compared to several hundred millivolts for a Schottky diode solution, improving system efficiency and reducing thermal stress.
Recommended
DC-DC Converter High-Side Switch
The IPB120P04P404ATMA2 functions as the main high-side switch in 12V-to-low-voltage buck converters and buck-boost converters up to 30A output current. Its 205 nC total gate charge and 14,790 pF input capacitance make it suitable for switching frequencies between 50 kHz and 300 kHz. As a P-channel device, it operates directly from the input rail without a bootstrap circuit, reducing gate-driver complexity. At 25A continuous, conduction loss is approximately 2.4W, which the PG-TO263-3-2 package dissipates comfortably when soldered to a 1 square inch copper pour.
Recommended
Motor Drive H-Bridge High-Side
The IPB120P04P404ATMA2 is suitable as the high-side switch in brushed DC motor H-bridges operating from 12V/24V rails. Two devices form the upper half of an H-bridge driving motor currents up to 60A continuous (30A per FET). The P-channel configuration simplifies the gate-drive timing because both high-side and low-side switches can be driven by the same logic-level PWM signal referenced to ground. The 120A continuous rating and 136W power dissipation provide substantial overload margin for motor-start inrush currents.
Recommended
Hot-Swap and ORing Controller
The IPB120P04P404ATMA2 functions as the pass element in hot-swap controllers and redundant power ORing applications. Its 3.8 mOhm RDS(on) keeps voltage drop below 40mV at 10A load, which is critical for telecom and server DC distribution. The P-channel device can be turned off rapidly via a controller IC to limit inrush current during board hot-plug, protecting upstream supplies. With 136W power dissipation, it handles brief fault transients without immediate failure.
Recommended
Battery Management Systems (BMS)
The IPB120P04P404ATMA2 is used in lithium-ion battery pack protection circuits to provide reverse-battery, over-current, and short-circuit protection. Its low RDS(on) minimizes voltage drop across the protection path during high-current charge/discharge cycles, preserving battery efficiency. The 40V VDS rating covers 10S lithium packs fully charged at 42V with margin. The exposed D2PAK tab enables efficient thermal coupling to the battery pack chassis for sustained 30A+ discharge currents.
Recommended
Recommended Products Summary
Engineering reference data for IPB120P04P404ATMA2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB120P04P404ATMA1 | IPP120P04P404AKSA1 | NTD2955T4G | SUM110N04-04-E3 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | DPAK (TO-252) - smaller footprint | D2PAK (TO-263) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID) | 120 A | 120 A | 120 A | 120 A | 110 A |
| On-Resistance (RDS(on)) @ VGS=-10V | 3.8 mOhm | 3.8 mOhm | 3.8 mOhm | 3.5 mOhm | 4.0 mOhm |
| Total Gate Charge (Qg) | 205 nC | 205 nC | 205 nC | 180 nC | 220 nC |
| Power Dissipation (PD) | 136 W | 136 W | 136 W | 115 W | 125 W |
Key Differentiators
- OptiMOS-P2 trench technology gives industry-leading RDS(on) x Qg figure-of-merit (vs NTD2955T4G (onsemi))
- 120A continuous drain current rating with 136W power dissipation (vs SUM110N04-04-E3 (Vishay))
- Same-die drop-in upgrade path to automotive-qualified variants (vs IPB120P04P404ATMA1)
- Logic-level compatible gate drive at -10V VGS (vs Standard -threshold P-channel MOSFETs)
Design Notes
At 25A continuous drain current with RDS(on)=3.8 mOhm, conduction loss is approximately P=I^2*R=2.4W. The PG-TO263-3-2 package has a typical RthJC of 0.9 C/W and RthJA of 40 C/W on a 1 square inch copper pour. Estimated: junction temperature rise above ambient is 25C continuous at this load, so the part operates safely below the 175C Tj limit. For 50A+ continuous loads, increase copper pour to 2-3 square inches or use a clip-on heatsink. Never operate the part without soldering the exposed tab to copper.
The PG-TO263-3-2 exposed tab is internally connected to Pin 2 (Drain). The copper pour under the tab serves dual duty as electrical connection AND thermal heatsink. Use multiple thermal vias (0.3mm drill, 1mm pitch) under the tab to conduct heat to inner PCB layers with additional copper area. Recommended minimum: 4 vias for every square cm of tab footprint. Keep gate-trace impedance low by placing the gate driver within 20mm of Pin 1 and using a 10k pull-down resistor to keep the FET off during power-up.
Do not exceed +/-20V on the gate-source terminals - the thin gate oxide is easily punched through. In high-side P-channel switching, ensure VGS(off) is positive (gate pulled to source) when the device should be off, never floating. For 24V systems, add a 16V Zener gate-protection clamp to limit VGS transients caused by drain-voltage spikes. Estimated: a 24V jump-start transient produces dV/dt on the drain that can couple through Cgd to the gate, potentially forward-biasing the gate-source junction above 20V.
The 14,790 pF input capacitance and 205 nC gate charge require a gate driver capable of sourcing/sinking at least 1A peak for clean switching edges at 100 kHz. Below 10 kHz, a logic-level GPIO with 10k pull-up/pull-down can drive the gate directly but switching losses will be high. For 100 kHz+ operation, use a dedicated gate driver such as the IR2304SPBF. Place a 10-100 ohm gate-series resistor to damp ringing if the gate-trace length exceeds 25mm.
Compliance Information
RoHS compliant and lead-free per Infineon product page. AEC-Q100 automotive qualification status unknown - contact Infineon for automotive-grade variant details. The PG-TO263-3-2 package is MSL Level 1 (unlimited floor life).
