IPB60R125C6ATMA1 - 600V 30A 125mΩ CoolMOS C6 N-MOSFET | Infineon
MPN: IPB60R125C6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.78 | $27.80 |
| 100 | $2.21 | $221.00 |
| 500 | $1.89 | $945.00 |
| 1,000 | $1.62 | $1,620.00 |
IPB60R125C6ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch high currents at high voltages. It sits in the hierarchy: MOSFET → transistor → discrete semiconductor → power electronics. CoolMOS™ is Infineon's proprietary superjunction technology that dramatically reduces RDS(on) × area figure of merit compared to conventional planar MOSFETs, enabling higher power density and efficiency in switched-mode power supplies (SMPS).
The IPB60R125C6ATMA1 key features include: 600V drain-source breakdown voltage for universal-input PFC and LLC converters, 125 mΩ RDS(on) at 10V VGS for reduced conduction losses, very low gate charge (Qg) for fast switching and low driver losses, integrated body diode for hard-switching topologies, and an operating junction temperature range of -55°C to +150°C. The PG-TO263-3 surface-mount package enables direct attachment to PCB copper pours for thermal dissipation.
The CoolMOS C6 superjunction architecture uses deep-trench charge-balance technology that distributes the electric field across multiple parallel p-n junctions. This allows thinner, more highly-doped drift regions than conventional MOSFETs, cutting RDS(on) by approximately 5x for the same die area. The low Qg and integrated Zener-protected gate make it tolerant of standard gate-drive circuits.
Typical applications include server and telecom SMPS, industrial PFC boost stages, solar inverters, e-Mobility charging stations, HID lighting ballasts, and half-bridge / full-bridge converters in welding equipment. The 600V rating also suits it for 400V rectified industrial-bus front ends.
Design trade-offs: the C6 family prioritizes low RDS(on) and ease of use over the absolute lowest switching loss; for resonant topologies above 100 kHz, consider newer C7 or P7 generations. Ensure VGS(th) headroom and verify dv/dt immunity for the chosen gate-drive circuit.
This page synthesizes distributor pricing, drop-in alternatives in the same D2PAK footprint, and practical design notes beyond the manufacturer datasheet to accelerate component selection and second-source qualification.
Drop-in alternatives for IPB60R125C6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB60R125C6ATMA1 (same form factor and footprint) — differing in Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB60R125C6
✅ Drop-In📋 Reference alternative (not in catalog)
IPB60R099C6ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB60R160C6ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB60R380E6ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB60R040CFD7ATMA1
✅ Drop-In✓ In Stock
$5.19 / Unit
View Datasheet →FCPF125N65S3
✅ Drop-In📋 Reference alternative (not in catalog)
IPB60R125C6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ C6 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 30 A |
| Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 125 mΩ |
| Power Dissipation (PD) at TC=25°C | 219 W |
| Operating Junction Temperature | -55°C to +150°C |
| Package / Case | PG-TO263-3 (D2PAK, surface mount) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| RoHS Status | Compliant |
| Lead-Free Status | Yes |
IPB60R125C6ATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | D — Drain (also connected to metal back tab) |
| Pin 3 | S — Source |
Safe Operating Area (DC)
Typical Applications
IPB60R125C6ATMA1 is suitable for 6 applications: Server & Telecom SMPS Primary Side, Industrial PFC Boost Stage, Solar Micro-Inverter & String Inverter, EV Charging Station Auxiliary Supply, HID & Industrial Lighting Ballast, Welding & Plasma-Cutter Power Stage.
Server & Telecom SMPS Primary Side
The IPB60R125C6ATMA1 fits server and telecom SMPS primary-side half-bridge and full-bridge topologies because its 600V VDS rating comfortably handles rectified 400V telecom bus and universal-input PFC output. The 125 mΩ RDS(on) at VGS=10V delivers ~95% efficiency at 3-5kW power levels, while the integrated body diode supports hard-switching bridges. The PG-TO263-3 D2PAK package allows direct PCB copper attachment for heatsinking, and the C6 superjunction technology reduces switching loss compared to older planar MOSFETs at the typical 65-100 kHz operating frequency.
Recommended
Industrial PFC Boost Stage
In industrial CCM (continuous-conduction-mode) boost PFC stages the IPB60R125C6ATMA1 acts as the main switching element, with 600V breakdown voltage handling rectified 400V industrial bus and supporting 230VAC single-phase inputs. The 30A continuous drain current at TC=25°C supports 3-4kW PFC designs, while the 125 mΩ RDS(on) keeps conduction loss manageable. Designers pair the MOSFET with a dedicated CCM PFC controller; for CRM/transition-mode PFC at higher frequency the newer C7 or GaN devices offer better performance.
Recommended
Solar Micro-Inverter & String Inverter
The IPB60R125C6ATMA1 is well suited to single-phase solar micro-inverter and string inverter DC-AC stages, where 600V VDS ratings above the 400V PV open-circuit maximum provide robust transient headroom. The 30A rating supports up to 3kW micro-inverter outputs. The C6 family's low gate charge enables efficient high-frequency PWM, while the integrated body diode simplifies half-bridge layouts. Thermal management via D2PAK copper pour ensures long-term reliability in outdoor IP65/IP67 enclosure environments.
Recommended
EV Charging Station Auxiliary Supply
In EV charging station auxiliary and housekeeping power supplies, the IPB60R125C6ATMA1 provides 600V breakdown headroom on rectified 400V battery rails for isolated DC-DC converters. The 125 mΩ RDS(on) delivers high efficiency in 100-300W auxiliary supplies, while the D2PAK surface-mount package simplifies high-volume automated assembly. AEC-Q100 automotive qualification is not present on this part, so it is appropriate for charging-station infrastructure rather than in-vehicle traction inverters.
Recommended
HID & Industrial Lighting Ballast
The IPB60R125C6ATMA1 powers high-intensity-discharge (HID) lighting ballasts and industrial-grade LED driver power-factor-correction stages, where its 600V rating covers 230/277VAC rectified inputs with substantial safety margin. The 125 mΩ RDS(on) minimizes thermal dissipation in compact ballast enclosures, while the 30A continuous current supports high-wattage luminaires. The C6 superjunction technology's high dV/dt immunity reduces EMI-filter complexity in lighting products subject to stringent EMC regulations like FCC Part 15 and EN 55015.
Recommended
Welding & Plasma-Cutter Power Stage
In welding inverter and plasma-cutter primary-side full-bridge topologies, the IPB60R125C6ATMA1's 600V rating and 30A continuous drain current support industrial welding power outputs above 5kW. The 125 mΩ RDS(on) limits conduction loss during the high-current pulse, while the C6 superjunction architecture handles the demanding thermal-cycling profile of arc-welding applications. The D2PAK package with its large metal tab allows direct thermal attachment to chassis heatsinks common in welding equipment, where reliable thermal management is critical.
Recommended
Recommended Products Summary
Engineering reference data for IPB60R125C6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB60R125C6 | IPB60R099C6ATMA1 | IPB60R160C6ATMA1 | IPB60R380E6ATMA1 | FCPF125N65S3 |
|---|---|---|---|---|---|---|
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| VDS (max) | 600 V | 600 V | 600 V | 600 V | 600 V | 650 V |
| ID continuous at TC=25°C | 30 A | 30 A | 36 A | 26 A | 15 A | 30 A |
| RDS(on) max at VGS=10V | 125 mΩ | 125 mΩ | 99 mΩ | 160 mΩ | 380 mΩ | 125 mΩ |
| Technology Family | CoolMOS C6 (superjunction) | CoolMOS C6 | CoolMOS C6 | CoolMOS C6 | CoolMOS E6 | onsemi FRFET/SuperFET |
| Power Dissipation (TC=25°C) | 219 W | 219 W | 250 W | 190 W | 125 W | 208 W |
| Unit Price (qty-1, USD) | 3.20 | 2.95 | 3.85 | 2.65 | 2.10 | 3.50 |
Key Differentiators
- Lower RDS(on) option available in same footprint (vs IPB60R099C6ATMA1)
- Same pinout, lower cost alternative (vs IPB60R380E6ATMA1)
- Cross-brand source qualification (vs FCPF125N65S3)
- Integrated fast body diode option (vs IPB60R040CFD7ATMA1)
Design Notes
The PG-TO263-3 (D2PAK) package relies on the metal back tab for heatsinking. Solder the tab directly to a PCB copper pour of at least 1 square inch (645 mm²), with thermal vias to internal copper planes, to achieve junction-to-ambient thermal resistance around 40-50°C/W. Estimated: at 28W conduction loss (15A continuous, 125 mΩ RDS(on)), junction-to-case rise is ~0.57 × 28 = 16°C above case temperature. Always cross-check RθJC against the latest datasheet curve.
Keep the high-current switching loop (drain-source) area minimal to reduce parasitic inductance and voltage overshoot during turn-off. Place gate-drive components (gate resistor, optional TVS clamp) within 5 mm of the gate pin to minimize gate-loop inductance. Use a Kelvin-source connection if the package exposes a source-sense pin, but the standard PG-TO263-3 has only 3 pins, so use the source tab directly for the gate-return path.
Do not exceed VGS(max) of ±20V. Always insert a gate-source resistor (≥10 kΩ) to ensure the MOSFET stays off when the driver is in high-impedance state. For hard-switched half-bridge topologies, ensure adequate dead-time in the PWM controller to prevent shoot-through. The CoolMOS C6 has a relatively slow body-diode reverse recovery compared to newer C7/P7 generations, so for continuous-conduction-mode PFC use proper control techniques.
CoolMOS C6 switching edges are fast (dV/dt up to 50 kV/μs). Use a snubber (RC or RCD) across the transformer primary or drain-source to limit ringing and reduce conducted EMI. Common-mode chokes on the AC input and Y-capacitors on the DC bus are recommended to meet EN 55022 Class B. For 600V designs above 5 kW, consider spread-spectrum frequency modulation in the PWM controller to diffuse EMI peaks.
Compliance Information
RoHS and REACH compliant per Infineon product page. ATMA1 suffix indicates lead-free, halogen-free, tape-and-reel packaging. Not AEC-Q100 qualified - choose AEC-Q100 alternative for automotive traction applications.
