IPD60R600P6ATMA1 - 600V 7.3A CoolMOS P6 MOSFET | Infineon
MPN: IPD60R600P6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.21 | $12.10 |
| 100 | $0.98 | $98.00 |
| 500 | $0.84 | $420.00 |
| 1,000 | $0.72 | $720.00 |
IPD60R600P6ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an electric field at the gate to modulate conduction between drain and source terminals. N-channel MOSFETs are the dominant choice for high-voltage power conversion because the majority carrier (electron) transport yields low conduction loss. The CoolMOS P6 family sits in the broader taxonomy of discrete semiconductors > MOSFETs > superjunction MOSFETs > 600V-class high-voltage MOSFETs > power management, and the IPD60R600P6ATMA1 is the medium-Rds(on) member of the 600V P6 lineup.
Key features of the IPD60R600P6ATMA1 include 540 mOhm Rds(on) (max), integrated fast-recovery body diode for hard commutation, low gate charge (Qg) and low Qrr for reduced switching loss, and a TO252 (DPAK) footprint optimized for high-density PCB layouts. It supports continuous Vds of 600V and avalanche-rated transient energy, plus an operating junction range up to 150C, making it suitable for thermally demanding environments.
Architecturally, the CoolMOS P6 cell uses a deep-trench superjunction structure that splits the voltage-blocking layer into alternating P/N pillars, breaking the silicon limit of conventional MOSFETs. The result is a much better Figure-of-Merit (Rds(on) x Qg) than planar 600V parts, allowing compact converters to switch at higher frequencies with smaller magnetics. The integrated body diode has been tuned to reduce reverse-recovery charge, which lowers losses in bridge and PFC topologies.
Typical applications include PFC stages in PC Silverbox and adapter designs, hard-switched PWM stages and resonant switching stages in LCD/PDP TV, lighting ballasts, server SMPS, telecom rectifiers and UPS inverters. The device is also widely used as a 600V-class main switch in small offline flyback and forward converters.
When designing with the IPD60R600P6ATMA1, mind the DPAK thermal envelope: at 7.3A and 600V the silicon is capable, but the package requires careful PCB copper-pour design and, in continuous high-current paths, a topside thermal pad stitched with vias to a heatsink or copper plane to keep Tj within the 150C rating.
Drop-in alternatives for IPD60R600P6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD60R600P6ATMA1 (same form factor and footprint) — differing in Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD60R600P6
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPD80R600P7ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.92 / Unit
View Datasheet →IPD60R600CP
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPD60R600P6ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | CoolMOS P6 (superjunction N-channel MOSFET) |
| Drain-Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Id, Tc) | 7.3 A |
| On-State Resistance Rds(on) | 540 mOhm (typ, per Infineon product page) |
| Power Dissipation (Pd, Tc) | 63 W |
| Body Diode Reverse Recovery | Fast recovery (CoolMOS P6 family characteristic) |
| Operating Junction Temperature | -40C to +150C |
| Package | PG-TO252-3 (DPAK) surface mount |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (per Infineon product page) |
| Application Family | PFC stages, hard/soft switching PWM, resonant converters, PC Silverbox, adapter, LCD/PDP TV, lighting, server, telecom, UPS |
| Series | CoolMOS P6 industrial grade |
IPD60R600P6ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (voltage-controlled) |
| Pin 2 | Drain — Drain terminal (high-voltage switching node) |
| Pin 3 | Source — Source terminal (low-side reference) |
Safe Operating Area (DPAK, Tc=25C)
Typical Applications
IPD60R600P6ATMA1 is suitable for 6 applications: PFC (Power Factor Correction) Stage, PC Silverbox SMPS, LCD and PDP TV Power Supply, Lighting Ballasts (HID and LED Driver PFC), Server and Telecom Rectifier, UPS Inverter (Low-Power Line-Interactive).
PFC (Power Factor Correction) Stage
The IPD60R600P6ATMA1's 600V drain-source rating and 540 mOhm Rds(on) make it well suited for CCM and DCM PFC boost stages in offline power supplies. Its CoolMOS P6 superjunction cell delivers low switching charge and a tuned body diode that minimizes reverse-recovery loss, allowing continuous conduction-mode PFC at 65-100 kHz without excessive heating. Designers use the part as the main boost switch in 300W-1kW PFC front ends where conduction loss dominates, pairing it with a dedicated PFC controller. Compared with planar 600V MOSFETs, the P6 cell cuts switching loss enough to permit smaller magnetics and higher switching frequency.
Recommended
PC Silverbox SMPS
In ATX and SFF PC Silverbox power supplies, the IPD60R600P6ATMA1 is used in the PFC stage and as a main switch in the +12V forward or full-bridge converter. Its 7.3A continuous rating handles the 600W-800W Silverbox envelope without paralleling, while the DPAK footprint keeps the PCB compact. CoolMOS P6's low Qrr reduces cross-conduction loss in bridge topologies, an important factor at the 100 kHz+ switching frequencies typical of desktop PSU designs. The part's industrial qualification also gives headroom for the +50C internal Silverbox environment.
Recommended
LCD and PDP TV Power Supply
LCD and PDP TV power supplies demand a 600V-class main switch that can drive the PFC and main converter in a tight chassis. The IPD60R600P6ATMA1's 540 mOhm Rds(on) in DPAK keeps conduction loss manageable at the 200W-400W TV power envelope, while the low Qg reduces driver-stage stress on the PWM controller. CoolMOS P6's fast body-diode recovery is particularly helpful in the resonant LLC half-bridge used for the backlight inverter, where reverse-recovery charge directly translates to switching loss and EMI.
Recommended
Lighting Ballasts (HID and LED Driver PFC)
HID ballast front-end PFC and high-power LED driver PFC stages use 600V MOSFETs because the rectified mains peak reaches 380V at 230V AC plus margin. The IPD60R600P6ATMA1 handles this voltage with 200V of avalanche headroom and offers 7.3A of continuous current for ballast ratings up to ~150W. Its CoolMOS P6 technology gives high efficiency at the dimming-relevant low-load operation, and the DPAK footprint simplifies through-hole-to-SMD migration. Designers also use the part in resonant half-bridge driver stages where low Qrr limits circulating current.
Recommended
Server and Telecom Rectifier
Server and telecom rectifiers (-48V or +380V front-end) commonly use 600V superjunction MOSFETs in PFC and LLC stages because the rectified 230V AC bus exceeds 380V at peak. The IPD60R600P6ATMA1's 600V rating covers this envelope, while its 63W power dissipation and DPAK package support forced-air cooled designs. CoolMOS P6's low FOM (Rds(on) x Qg) enables 100 kHz+ switching, allowing smaller planar transformers in 1U rectifier form factors. The part's industrial-grade qualification is well matched to the continuous-on operation typical in data-center power.
Recommended
UPS Inverter (Low-Power Line-Interactive)
Small line-interactive UPS systems up to ~1.5kW use the IPD60R600P6ATMA1 as the main switch in the battery-charger PFC stage and the line-to-bypass transfer converter. Its 600V/7.3A envelope handles the surge power of battery charging with adequate margin, and the DPAK package drops into the same PCB outline as competing 600V parts for second-source flexibility. CoolMOS P6's avalanche energy rating improves robustness during the abrupt load steps that occur when the UPS switches from line to battery mode, an important reliability feature in mission-critical applications.
Recommended
Recommended Products Summary
Engineering reference data for IPD60R600P6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD60R600P6 | IPD80R600P7ATMA1 | IPD60R600CP |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Drain-Source Voltage (Vds) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (Id at Tc) | 7.3 A | 7.3 A | 7.5 A | 6.1 A |
| On-State Resistance Rds(on) | 540 mOhm | 540 mOhm | ~540 mOhm (P7 family) | ~600 mOhm |
| Power Dissipation (Pd at Tc) | 63 W | 63 W | ~63 W | ~55 W |
| Technology Family | CoolMOS P6 (superjunction) | CoolMOS P6 (superjunction) | CoolMOS P7 (superjunction) | CoolMOS CP (superjunction) |
| Body Diode Recovery | Fast (P6 tuned) | Fast (P6 tuned) | Improved (P7) | Standard |
Key Differentiators
- CoolMOS P6 superjunction technology with 540 mOhm Rds(on) in DPAK (vs IPD60R600CP (CoolMOS CP))
- Pin-compatible upgrade path to CoolMOS P7 (vs IPD80R600P7ATMA1)
- Higher continuous drain current than CP family (vs IPD60R600CP)
Design Notes
The PG-TO252-3 (DPAK) package has a junction-to-ambient thermal resistance (theta_JA) around 50 C/W on a standard 1oz 1-square-inch copper pad, rising sharply with smaller copper. At full 7.3A and high Vds, the silicon can dissipate tens of watts, so a properly stitched copper pour (thermal vias to an internal plane) is mandatory. For continuous 50W+ dissipation, a topside heatsink is recommended to keep Tj below 125C for long-life operation.
Minimize the gate-loop inductance by routing the gate drive return directly to the Source pin, not to the power-source copper. Place a 10-100 ohm gate resistor close to the gate pin to damp ringing. Keep the drain-node copper compact to reduce capacitive coupling, and use a wide source copper pour stitched with multiple vias to carry the continuous 7.3A without voltage drop or hotspot formation.
For hard-switched PFC and bridge topologies, separate the power loop (drain-source) from the gate-drive loop to avoid dv/dt coupling that can cause spurious turn-on. Use a Kelvin connection to Source when available, and place the input bulk capacitor and PFC diode as close as possible to the drain and source pads to minimize parasitic inductance that stresses the CoolMOS avalanche rating during commutation.
Do not exceed the 600V Vds rating - leave at least 50V margin for voltage overshoot from leakage inductance. The CoolMOS P6 body diode can be used for short dead-time intervals but is not a replacement for an explicit fast-recovery diode in high-Qrr bridge circuits. Verify Vgs stays within +/-20V (or +/-30V abs-max per datasheet) to avoid gate-oxide rupture, especially during transient events.
Compliance Information
RoHS and REACH compliance per Infineon product page; industrial-grade (not AEC-Q100 automotive qualified - choose automotive-grade P6 variants for vehicle applications). Halogen-free and lead-free per Infineon product family declaration.
