IPP037N08N3GXKSA1 - 80V 100A 3.7mΩ OptiMOS 3 MOSFET | Infineon
MPN: IPP037N08N3GXKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.21 | $22.10 |
| 100 | $1.86 | $186.00 |
| 500 | $1.58 | $790.00 |
| 1,000 | $1.32 | $1,320.00 |
IPP037N08N3GXKSA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to switch and amplify signals in power electronics. The N-channel enhancement-mode MOSFET uses a positive gate-source voltage to create a conductive channel between drain and source. In the broader device taxonomy, the IPP037N08N3GXKSA1 sits at: power MOSFET -> discrete MOSFET -> discrete semiconductor -> power conversion IC ecosystem. OptiMOS™ 3 represents Infineon's third-generation trench MOSFET platform, optimized for low RDS(on) × gate charge (FOM) at 80-300 V voltage classes.
Key differentiating features include industry-leading figure-of-merit (RDS(on) × Qg) for high-frequency switching, low thermal resistance through the TO-220 package, and avalanche-rated ruggedness. The 3.75 mΩ on-resistance enables <2% conduction loss at 50 A continuous operation, while the TO-220 through-hole form factor supports bolted heatsink mounting for high-power industrial designs. The drive voltage is specified at 6 V minimum and 10 V maximum RDS(on) test condition.
Typical applications for the IPP037N08N3GXKSA1 span server and telecom power supplies (as the synchronous rectifier in 48 V buck and LLC converters), solar micro-inverters (high-frequency switching leg), electric-vehicle onboard chargers and DC-DC stages, motor-drive H-bridges for industrial automation, and uninterruptible power supplies (UPS). Its low RDS(on) at 10 V VGS minimizes conduction loss, while low Qg reduces driver loss at switching frequencies up to several hundred kHz.
When designing with this part, pay close attention to gate-drive voltage levels. The 3.75 mΩ RDS(on) is guaranteed at VGS = 10 V; at VGS = 6 V the on-resistance is higher. Use a dedicated gate driver IC or bootstrap supply to maintain a clean 10 V drive rail, especially when the device is used as a high-side switch in a half-bridge topology. Thermal management via the TO-220 tab and heatsink compound is critical for sustained 100 A operation.
This page synthesizes distributor stock, drop-in alternatives within the OptiMOS™ 3 family, and practical design notes that complement the Infineon datasheet. Cross-references to pin-compatible same-package MOSFETs from Infineon's portfolio help engineers manage sourcing and second-source qualification.
Drop-in alternatives for IPP037N08N3GXKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPP037N08N3GXKSA1 (same form factor and footprint) — differing in Technology, Package, Operating Temperature Range, Mounting Type, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPP037N08N3G
✅ Drop-In📋 Reference alternative (not in catalog)
IPP045N10N3GXKSA1
✅ Drop-In✓ In Stock
$2.2 / Unit
View Datasheet →IPP075N15N3GXKSA1
✅ Drop-In✓ In Stock
$1.92 / Unit
View Datasheet →IPB110P06LMATMA1
✅ Drop-In✓ In Stock
$1.31 / Unit
View Datasheet →IPW60R037P7XKSA1
✅ Drop-In✓ In Stock
$3.55 / Unit
View Datasheet →STP140N8F7
✅ Drop-In📋 Reference alternative (not in catalog)
IPP037N08N3GXKSA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) - OptiMOS™ 3 |
| Drain to Source Voltage (Vdss) | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | 100 A |
| RDS(on) Max @ VGS=10V | 3.75 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 6 V, 10 V |
| Power Dissipation (Pd) @ Tc=25°C | 214 W |
| Package | PG-TO220-3 (Through Hole) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Operating Temperature Range | -55°C to +175°C (junction) |
| RoHS Status | Compliant |
IPP037N08N3GXKSA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (6V/10V typ for RDS(on) spec) |
| Pin 2 | Drain — Drain connection (internally connected to mounting tab) |
| Pin 3 | Source — Source connection (power return) |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
IPP037N08N3GXKSA1 is suitable for 6 applications: 48V Server and Telecom Synchronous Rectifier, Solar Micro-Inverter Switching Leg, Industrial Motor Drive H-Bridge, Uninterruptible Power Supply (UPS) Battery Switch, Electric Vehicle 48V Mild-Hybrid DC-DC Stage, High-Current Hot-Swap and ORing Controller Switch.
48V Server and Telecom Synchronous Rectifier
The IPP037N08N3GXKSA1 is ideal as the synchronous rectifier MOSFET in 48 V-input isolated DC-DC converters for server and telecom power supplies. Its 3.75 mΩ RDS(on) at VGS = 10 V minimizes conduction loss on the secondary-side rectification stage, while the 80 V Vdss provides >50% headroom above the 48 V nominal bus including transients. The 100 A continuous drain current supports 1-2 kW converter designs at full load. Compared to planar MOSFETs of similar rating, the OptiMOS™ 3 trench architecture cuts body-diode reverse-recovery charge, reducing dead-time loss and allowing switching frequencies of 100-200 kHz with manageable thermals. Use a bootstrap or isolated gate driver to deliver a clean 10 V drive rail.
Recommended
Solar Micro-Inverter Switching Leg
In solar micro-inverter topologies (HERIC, H-bridge, or flying-capacitor), the IPP037N08N3GXKSA1 serves as the main switching device on the 40-60 V photovoltaic bus side. The 80 V breakdown voltage handles the PV open-circuit voltage plus boost-converter overshoot with adequate margin, and the 3.75 mΩ RDS(on) keeps peak efficiency above 96% in micro-inverters up to 300 W. OptiMOS™ 3's low Qg (refer to datasheet) limits driver loss at the 50-100 kHz switching frequencies typical of micro-inverter designs. The TO-220 package supports bolted heatsink attachment in outdoor enclosures where convection cooling is limited.
Recommended
Industrial Motor Drive H-Bridge
The IPP037N08N3GXKSA1 functions as the low-side switch in industrial 24-48 V brushed DC and low-voltage BLDC motor drive H-bridges. Its 100 A continuous drain current supports motor drives up to 3-5 kW mechanical output, and the 80 V Vdss handles inductive flyback transients from motor windings without requiring extensive snubbing. The 3.75 mΩ on-resistance limits I²R losses during PWM switching, reducing heatsink size at high duty cycles. When paired with a complementary high-side P-channel MOSFET (e.g., IPB110P06LMATMA1), the H-bridge achieves high efficiency with simple gate-drive circuitry. Always include a flyback diode or use the MOSFET's intrinsic body diode for inductive loads.
Recommended
Uninterruptible Power Supply (UPS) Battery Switch
The IPP037N08N3GXKSA1 is well suited as the battery disconnect switch in 48 V UPS systems. Its 100 A continuous rating covers the full inverter input current for 3-5 kVA UPS modules, and the 3.75 mΩ RDS(on) keeps voltage drop across the disconnect below 0.4 V at 100 A - critical for battery runtime calculations. The 80 V Vdss withstands the open-battery transient voltage when the charger connects at 56 V float. The TO-220 through-hole package supports the rugged mechanical assembly typical of UPS battery cabinets and provides natural creepage distance for the high-voltage battery bus.
Recommended
Electric Vehicle 48V Mild-Hybrid DC-DC Stage
In 48 V mild-hybrid electric vehicles (MHEV), the IPP037N08N3GXKSA1 operates as the main switching element in the 48 V to 12 V buck DC-DC converter. The 80 V Vdss handles the 48 V bus including load-dump transients up to 70 V with proper TVS clamping, and the 100 A continuous current rating supports the 2-3 kW power levels typical of MHEV DC-DC converters. The 3.75 mΩ RDS(on) keeps full-load efficiency above 95%, which is critical for fuel-economy credits. The TO-220 package provides the mechanical robustness required for automotive underhood environments and supports liquid-cooled cold-plate mounting in higher-power variants.
Recommended
High-Current Hot-Swap and ORing Controller Switch
The IPP037N08N3GXKSA1 functions as the main pass-FET in -48 V telecom hot-swap and ORing applications. Its 3.75 mΩ on-resistance limits steady-state voltage drop to <0.4 V at 100 A, and the 80 V Vdss handles input transients during plug-in events. The SOA capability supports the high inrush currents typical of hot-swap events when properly heatsunk. The TO-220 package allows direct PCB mounting with a small heatsink, simplifying the mechanical design of front-end power shelves. Use a dedicated hot-swap controller IC to manage the inrush profile and protect the MOSFET from SOA violations during startup.
Recommended
Recommended Products Summary
Engineering reference data for IPP037N08N3GXKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP037N08N3G | IPP045N10N3GXKSA1 | IPP075N15N3GXKSA1 | IPB110P06LMATMA1 | IPW60R037P7XKSA1 | STP140N8F7 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | STMicroelectronics |
| Package | PG-TO220-3 | PG-TO220-3 - same | PG-TO220-3 - same | PG-TO220-3 - same | PG-TO220-3 - same | PG-TO220-3 - same | TO-220 - same |
| Drain-Source Voltage (Vdss) | 80 V | 80 V | 100 V | 150 V | 60 V | 600 V | 80 V |
| Technology | OptiMOS™ 3 | OptiMOS™ 3 | OptiMOS™ 3 | OptiMOS™ 3 | OptiMOS | CoolMOS P7 | STripFET F7 |
| Channel Polarity | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel |
Key Differentiators
- Industry-leading RDS(on) × Qg figure-of-merit at 80 V (vs STP140N8F7 (STMicroelectronics))
- Wide portfolio of voltage-rated variants in the same TO-220 footprint (vs Single-voltage competitor parts)
- 100 A continuous rating in standard TO-220 package (vs TO-220 alternatives rated 70-80 A)
Design Notes
At 100 A continuous drain current in the TO-220 package, sustained operation requires a properly sized heatsink. Estimated: with Pd = 214 W max at Tc=25°C and a typical TO-220 theta_JC of 0.75 C/W, the junction can rise 160°C above case. Mount the TO-220 tab to an aluminum heatsink of at least 50 cm² with thermal compound, or to a copper PCB pour of 10+ cm² if no external heatsink is used. Always consult the manufacturer's SOA curves for the actual pulse/continuous boundary.
For high-current switching (100 A) keep the source return path short and wide - use a ground plane on the bottom layer connected directly to pin 3. Gate-drive traces should be <25 mm and bypassed with a 100 nF ceramic close to the gate pin to prevent ringing. The drain tab and pin 2 share a connection - isolate the heatsink with a thermal pad if it is grounded, otherwise connect the heatsink directly to the drain for lowest thermal resistance.
The 3.75 mΩ RDS(on) is specified only at VGS = 10 V. Driving the gate at 5 V or with a weak gate driver will dramatically increase on-resistance and cause thermal runaway. Always use a gate driver capable of delivering 10 V at the MOSFET's Qg (refer to datasheet), and consider a dedicated gate-driver IC such as IRS2110SPBF for half-bridge applications. Also, never exceed 80 V Vds even transiently - the avalanche rating (EAS) is not infinite.
Estimated conduction loss at 50 A continuous with 3.75 mΩ RDS(on) is P = I² × R = 50² × 0.00375 = 9.4 W. Switching loss depends on switching frequency, Vds, and Qg - at 100 kHz with 48 V across the drain, expect 5-10 W additional switching loss. Total dissipation must stay below the SOA curve at the operating duty cycle; derate by 30% for industrial thermal design to ensure long-term reliability.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial/consumer grade part. For automotive applications requiring AEC-Q100, consult Infineon's automotive-grade OptiMOS portfolio.
