IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon
MPN: IR2127STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.55 | $15.50 |
| 100 | $1.22 | $122.00 |
| 500 | $0.98 | $490.00 |
| 1,000 | $0.81 | $810.00 |
| 2,500 | $0.71 | $1,775.00 |
IR2127STRPBF Overview
A high-side gate driver IC is a category of power management semiconductor that level-shifts a low-voltage control signal referenced to logic ground to a high-voltage floating rail referenced to the source of a switching transistor. This level-shift is essential in half-bridge and full-bridge topologies where the high-side transistor's source pin swings between the DC bus and ground at the switching frequency. The IR2127 family is part of the broader gate-driver hierarchy: gate driver -> driver IC -> power management IC -> semiconductor, and shares design heritage with Infineon's broader high-voltage floating-channel driver portfolio.
Key parametric features include a continuous operating offset voltage tolerance up to +600 V, dV/dt immunity across the high-side well, tolerance to negative transient voltages, and an integrated current-sense comparator that allows cycle-by-cycle over-current protection without an external sense amplifier. The supply range is 12 V to 20 V, propagation delay is approximately 200 ns, and the part is rated for operation across the -40C to +125C automotive temperature range with a Pb-free (PBF) matte-tin finish.
The IR2127 uses a proprietary high-voltage level-shifter combined with a current-sense comparator. The floating channel is built on Infineon's SOI-based high-voltage BCD process, which provides the dV/dt immunity that older junction-isolated drivers lacked. The internal current-sense comparator eliminates one external op-amp in motor-drive and SMPS current-limit loops, saving PCB area and improving loop bandwidth.
Typical applications include three-phase motor drives, half-bridge converters, solenoid and coil drivers, high-side switches in industrial automation, and switch-mode power supplies where a high-side transistor must be switched from a low-voltage MCU. The IR2127STRPBF is also widely used in class-D audio amplifiers and battery management systems requiring a robust floating gate driver.
When designing with this device, ensure the bootstrap capacitor on the Vb-Vs rail is sized for the worst-case duty cycle and gate charge, and add a low-ESR bypass capacitor directly on the Vcc pin. For applications exceeding 600 V, add external transient-suppression diodes across Vb-Vs to protect against avalanche breakdown of the floating well.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IR2127STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR2127STRPBF (same form factor and footprint) β differing in Package, Configuration, RoHS Status, Lead-Free / RoHS, Logic Input Compatibility.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR21271STRPBF
β Drop-Inβ In Stock
$1.82 / Unit
View Datasheet βIR2127SPBF
β Drop-Inβ In Stock
$0.74 / Unit
View Datasheet βIR2127S
β Drop-Inπ Reference alternative (not in catalog)
IR21271SPBF
β Drop-Inβ In Stock
$0.71 / Unit
View Datasheet βIRS2008STRPBF
β Drop-Inβ In Stock
$0.334 / Unit
View Datasheet βIRS2109STRPBF
β Drop-Inβ In Stock
$0.61 / Unit
View Datasheet βIR2127STRPBF Maximum Ratings & Electrical Characteristics
| Configuration | High-Side |
| Supply Voltage Range | 12 V to 20 V |
| Output Voltage (Offset) | up to 600 V |
| Peak Source Current | 250 mA |
| Peak Sink Current | 500 mA |
| Propagation Delay | 200 ns (typical) |
| Input Logic | Non-Inverting |
| Number of Outputs | 1 |
| Rise Time | 80 ns (typical) |
| Fall Time | 60 ns (typical) |
| Operating Temperature Range | -40C to +125C |
| Package | 8-SOIC (3.90 mm body) |
| Mounting Type | Surface Mount |
| MSL Level | MSL3 (per JEDEC J-STD-020) |
| Lead-Free / RoHS | Pb-free (PBF), RoHS compliant |
| dV/dt Immunity | Yes (high-side floating channel) |
| Integrated Current Sense | Yes (cycle-by-cycle comparator) |
IR2127STRPBF Pin Configuration
| Pin 1 | VCC β +12 V to +20 V supply for gate-drive logic and low-side circuitry |
| Pin 2 | IN β Non-inverting logic-level PWM input referenced to GND |
| Pin 3 | GND β Logic ground and low-side return for VCC |
| Pin 4 | NC β Not connected (per datasheet) |
| Pin 5 | VS β High-side floating well return; connects to source/emitter of high-side switch |
| Pin 6 | VB β Bootstrap supply for the high-side floating driver (referenced to VS) |
| Pin 7 | CS β Current-sense comparator input for cycle-by-cycle over-current protection |
| Pin 8 | OUT β Gate-drive output to the gate of the high-side IGBT or MOSFET |
Typical Applications
IR2127STRPBF is suitable for 7 applications: Three-Phase Industrial Motor Drive, Switch-Mode Power Supply (SMPS) Half-Bridge, Solenoid and Injector Driver, Class-D Audio Amplifier Output Stage, Photovoltaic / Solar Inverter High-Side Switch, Industrial Automation High-Side Load Switch, Battery Management System High-Side Disconnect.
Three-Phase Industrial Motor Drive
The IR2127STRPBF is well suited to the high-side switch leg of 400 V to 480 V three-phase industrial motor drives where IGBTs or 600 V MOSFETs must be switched from a 3.3 V or 5 V MCU PWM signal. With 600 V continuous high-side offset tolerance, 250 mA source / 500 mA sink gate-drive capability, and 200 ns typical propagation delay, it cleanly drives modules such as the Infineon IGBTs in the IRGB/SG series. The integrated current-sense comparator enables per-phase cycle-by-cycle over-current protection, eliminating an external op-amp per phase. Place the bootstrap diode and capacitor on the Vb-Vs rail close to the chip, and size the bootstrap capacitor for the worst-case IGBT gate charge. Compared with discrete gate-drive optocouplers, the IR2127STRPBF cuts BOM count and improves dV/dt immunity in harsh industrial environments.
Recommended
Switch-Mode Power Supply (SMPS) Half-Bridge
In a half-bridge SMPS topology such as a 400 V input LLC or phase-shift full-bridge converter, the IR2127STRPBF drives the high-side primary MOSFET from a low-voltage PWM controller referenced to logic ground. Its 600 V floating-well rating covers 380 V to 400 V rectified bus voltages with margin, and its 250/500 mA source/sink current drives typical 600 V MOSFETs at switching frequencies up to several hundred kHz without external buffers. The 80 ns / 60 ns rise/fall times limit switching losses, while the dV/dt immunity prevents false triggering from the high-voltage dv/dt transitions of the half-bridge node. The integrated current-sense comparator simplifies primary-side current-mode control and primary over-current protection.
Recommended
Solenoid and Injector Driver
The IR2127STRPBF is a strong fit for high-side solenoid and injector drivers in automotive and industrial actuator systems, where the load is connected to a high-voltage rail and must be switched from a low-voltage MCU. Its 600 V tolerance handles inductive flyback transients that exceed the supply rail, while 500 mA sink current safely commutates inductive loads and protects the device during turn-off. The integrated current-sense comparator enables peak-and-hold current control of the solenoid without an external op-amp, simplifying the analog front end. The 12 V to 20 V VCC range matches the typical 12 V automotive battery rail. Designers should add a free-wheel diode across the solenoid and use a TVS to clamp the inductive spike below the 600 V rating.
Recommended
Class-D Audio Amplifier Output Stage
In a half-bridge or full-bridge Class-D audio amplifier, the IR2127STRPBF drives the high-side MOSFET of the output modulation stage from a low-voltage PWM modulator. Its 250/500 mA source/sink gate-drive capability and 200 ns propagation delay ensure fast switching with low distortion, while the 600 V floating-well rating covers bus voltages up to +400 V in high-power professional audio amplifiers. The integrated current-sense comparator can be used for speaker over-current protection, eliminating an external sense amplifier. For lower-power consumer Class-D applications (e.g. 24 V bus), the IRS2008STRPBF from the same family provides a similar drop-in solution at lower voltage.
Recommended
Photovoltaic / Solar Inverter High-Side Switch
The IR2127STRPBF drives the high-side switching transistor in DC-DC stages of photovoltaic (solar) micro-inverters and string inverters where the DC bus reaches 400 V to 600 V. Its 600 V floating-well rating and dV/dt immunity enable reliable switching under the harsh noise conditions present in solar installations. The integrated current-sense comparator allows cycle-by-cycle current limiting required by solar inverter safety standards. The wide operating temperature range (-40C to +125C) supports outdoor inverter enclosures without derating. The Pb-free matte-tin finish and RoHS compliance satisfy global solar inverter environmental requirements.
Recommended
Industrial Automation High-Side Load Switch
In 24 V to 48 V industrial automation systems, the IR2127STRPBF provides an isolated high-side switch interface between a PLC digital output and a higher-voltage actuator or sensor power rail up to 600 V. The non-inverting logic input accepts 3.3 V or 5 V PLC logic levels directly, while the floating gate-drive output can pull up to 600 V referenced to the high-side rail. This level-shift function is essential for actuator drivers in factory automation, robotics, and process control. The integrated current-sense comparator supports per-channel over-current protection and fault reporting back to the PLC. Compared with electromechanical relays, the IR2127STRPBF switches millions of cycles without wear and is far smaller.
Recommended
Battery Management System High-Side Disconnect
In battery management systems (BMS) for electric vehicles, e-bikes, and stationary energy storage, the IR2127STRPBF can drive the high-side disconnect MOSFET that isolates the battery pack from the load during fault conditions. Its 600 V tolerance supports 400 V and 800 V EV battery systems when driving stacked MOSFETs, while the integrated current-sense comparator enables instantaneous over-current detection. The 12 V to 20 V VCC range aligns with the auxiliary 12 V battery commonly used in EVs. Designers should add gate-resistance to control dV/dt and prevent parasitic turn-on in the half-bridge node.
Recommended
Recommended Products Summary
Engineering reference data for IR2127STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR21271STRPBF | IR2127SPBF | IR2127S | IR21271SPBF | IRS2008STRPBF | IRS2109STRPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC (3.90 mm) | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Maximum High-Side Offset Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 200 V | 600 V |
| Peak Source Current | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 290 mA | 120 mA |
| Peak Sink Current | 500 mA | 500 mA | 500 mA | 500 mA | 500 mA | 600 mA | 270 mA |
| Integrated Current Sense | Yes | Yes | Yes | Yes | Yes | No | No (half-bridge topology) |
| Configuration | Single high-side | Single high-side | Single high-side | Single high-side | Single high-side | Single high-side | Half-bridge (HS + LS) |
| Supply Voltage Range | 12 V to 20 V | 12 V to 20 V | 12 V to 20 V | 12 V to 20 V | 12 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| RoHS / Lead-Free | Pb-free, RoHS | Pb-free, RoHS | Pb-free, RoHS | Non-Pb (legacy, may be non-RoHS) | Pb-free, RoHS | Pb-free, RoHS | Pb-free, RoHS |
Key Differentiators
- Integrated cycle-by-cycle current-sense comparator (vs IRS2008STRPBF)
- 600 V continuous high-side offset rating (vs IRS2008STRPBF)
- Single-channel high-side only vs half-bridge topology (vs IRS2109STRPBF)
Design Notes
Bootstrap capacitor sizing for the IR2127STRPBF: the Vb-Vs rail supplies the high-side gate-drive circuitry and must be recharged each switching cycle through a bootstrap diode from VCC. The minimum bootstrap capacitance is given by Cboot >= Qg / delta_Vb, where Qg is the gate charge of the driven IGBT/MOSFET and delta_Vb is the allowed droop on Vb-Vs (typically 1 V). For a 100 nC gate charge and 1 V droop, Cboot >= 100 nF; in practice use 1 uF to 10 uF ceramic for safety margin. Estimated: this calculation uses Qg = 100 nC and delta_Vb = 1 V as inputs. Place the bootstrap diode (e.g. UF4007 or a fast-recovery diode) and the capacitor as close to the Vb and Vs pins as possible.
PCB layout for the IR2127STRPBF: keep the high-side gate-drive loop (Vb-Vs-OUT-gate) as small as possible to minimize parasitic inductance that causes gate-oscillation and overshoot. Use a ground plane tied to logic GND, and separate the high-current switching return path from the logic-ground return of the chip. Add a 100 nF ceramic bypass capacitor directly on VCC (pin 1) to GND (pin 3), placed within 3 mm of the pins, plus a 1 uF to 10 uF bulk capacitor on the VCC rail. For dV/dt-critical designs, add a 10 kohm to 100 kohm gate-source resistor on the driven MOSFET to damp parasitic turn-on.
Common pitfalls when using the IR2127STRPBF: (1) Exceeding the 600 V continuous offset rating during transient events - add a TVS or Zener clamp across Vb-Vs rated below the avalanche breakdown of the floating well. (2) Forgetting the high-side ground (VS) reference - VS swings with the source of the high-side switch, so any external circuitry tied to VS must tolerate the full switching waveform. (3) Driving the IR2127 from a 3.3 V MCU without checking the input-threshold specification - the IR2127 is TTL-level CMOS-compatible, but verify the VIH/VIL against your MCU's GPIO voltage. (4) Using too small a bootstrap capacitor - this causes the high-side gate-drive voltage to droop and the high-side MOSFET to operate in the linear region, dissipating excessive power.
Compliance Information
RoHS compliant per Infineon product page. Pb-free (PBF) matte-tin finish. Not AEC-Q100 qualified; for automotive designs requiring AEC-Q100 consider IR21271STRPBF or visit the Infineon automotive gate-driver portfolio.
