IRS2302STRPBF - 600V Half-Bridge Gate Driver | Infineon | SOIC-8
MPN: IRS2302STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.02 | $10.20 |
| 100 | $0.85 | $85.00 |
| 500 | $0.72 | $360.00 |
| 1,000 | $0.62 | $620.00 |
| 2,500 | $0.54 | $1,350.00 |
IRS2302STRPBF Overview
A half-bridge gate driver IC is a type of high-voltage level shifter and gate driver used in power electronics to control a pair of switches arranged in a totem-pole or half-bridge configuration. The device translates low-voltage PWM logic signals (3.3 V / 5 V) from a microcontroller or DSP into the high-voltage gate-drive signals required to switch the high-side power switch whose source/drain swings with the phase node. The driver belongs to the broader family of gate driver ICs, which sits within the power management semiconductor hierarchy: gate driver -> high-voltage half-bridge driver -> driver IC -> power management IC -> semiconductor.
Key features include 3.3 V, 5 V, and 15 V logic-compatible inputs, undervoltage lockout (UVLO) for both VCC and VBS rails, cross-conduction prevention logic with built-in dead time, and a dedicated shutdown pin for fast protection response. The IRS2302STRPBF additionally provides soft turn-on, an external programmable dead-time architecture, and matched propagation delays to minimize duty-cycle distortion at high PWM frequencies. The 8-SOIC package is industry standard for this voltage class and is compatible with most half-bridge layouts designed around IR (now Infineon) driver generations.
Architecturally the IRS2302STRPBF uses a level-shifted high-side channel with a floating well that tolerates the rapid dV/dt transients present on the phase node of a switching half-bridge, plus a ground-referenced low-side channel that shares VCC. The 0.2 A/0.35 A asymmetric source/sink ratings compensate for typical MOSFET gate-charge asymmetry and avoid shoot-through by ensuring that turn-off (sink) is faster than turn-on (source). The shutdown input overrides the logic inputs and forces both gate outputs low, providing a hardware path for fault propagation from an upstream comparator or DESAT detector.
Typical applications include motor drive inverters for BLDC and PMSM motors, uninterruptible power supplies (UPS), switch-mode power supplies (SMPS) with half-bridge or active-clamp topologies, induction heating inverters, solar micro-inverters, and Class D audio amplifiers. The 600 V rating comfortably supports 230 V AC or 380 V DC bus designs when properly derated.
When designing with the IRS2302STRPBF, choose a bootstrap diode with fast recovery and a low forward drop, and size the bootstrap capacitor to supply the high-side gate charge with no more than ~10% droop. Place the VCC and VBS bypass capacitors as close as possible to pins 1 and 8 respectively to suppress ringing. For noise immunity, route the shutdown line away from the switching node and add a small RC filter if long traces are unavoidable.
Drop-in alternatives for IRS2302STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRS2302STRPBF (same form factor and footprint) β differing in Package, Logic Input Compatibility, MSL Level, Configuration, Number of Drivers.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS2302SPBF
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View Datasheet βIRS2127STRPBF
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View Datasheet βIR21064STRPBF
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View Datasheet βIR21531STRPBF
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View Datasheet βIRS2109STRPBF
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View Datasheet βIRS4428STRPBF
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View Datasheet βIRS2153DSTRPBF
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View Datasheet βIRS2302STRPBF Maximum Ratings & Electrical Characteristics
| Driver Configuration | Half-Bridge (High and Low Side, Independent) |
| Number of Drivers | 2 |
| Supply Voltage (VCC) | 5 V to 20 V |
| Offset Voltage (High-Side) | Up to +600 V |
| Source Current (typ.) | 0.2 A |
| Sink Current (typ.) | 0.35 A |
| Rise Time | 130 ns (typ.) |
| Fall Time | 50 ns (typ.) |
| Propagation Delay | 220 ns (typ.) |
| Logic Input Compatibility | 3.3 V, 5 V, 15 V |
| Input Type | Non-Inverting |
| Shutdown Pin | Yes |
| UVLO | Yes (VCC and VBS) |
| Cross-Conduction Protection | Yes (built-in dead time) |
| Operating Temperature | -40C to +125C |
| Package | 8-SOIC (3.90 mm body) |
| Mounting Type | Surface Mount |
| MSL Level | 2 (per JEDEC J-STD-020) |
| Halogen Free | Yes |
| RoHS Status | Compliant |
IRS2302STRPBF Pin Configuration
| Pin 1 | VCC β Low-side and logic supply voltage (5 V to 20 V) |
| Pin 2 | HIN β Logic input for high-side gate driver output (HO) |
| Pin 3 | LIN β Logic input for low-side gate driver output (LO) |
| Pin 4 | SD β Shutdown input, active low, forces both HO and LO low |
| Pin 5 | VSS β Logic ground / low-side return |
| Pin 6 | VS β High-side floating supply return / phase node connection |
| Pin 7 | LO β Low-side gate drive output |
| Pin 8 | HO β High-side gate drive output (referenced to VS) |
Typical Applications
IRS2302STRPBF is suitable for 6 applications: BLDC / PMSM Motor Drive Inverter, Half-Bridge SMPS Primary Drive, Solar Micro-Inverter Power Stage, Uninterruptible Power Supply (UPS) Inverter, Induction Heating Inverter, Class D Audio Amplifier Output Stage.
BLDC / PMSM Motor Drive Inverter
The IRS2302STRPBF is well-suited to drive a single phase leg of a 3-phase BLDC or PMSM motor inverter because its 600 V high-side rating covers 220 V AC-line-rectified bus designs up to 380 V DC, and its 0.2 A source / 0.35 A sink drive currents switch typical 600 V MOSFETs at up to 50 kHz PWM. The matched propagation delays (220 ns typical) keep the high-side and low-side channels phase-accurate, which is critical for sinusoidal commutation. The integrated shutdown pin provides hardware-level fault propagation from DESAT or overcurrent comparators, disabling both gate outputs within microseconds. For full 3-phase integration, designers typically pair three IRS2302STRPBF channels or migrate to the IRS2334MTRPBF.
Recommended
Half-Bridge SMPS Primary Drive
In a half-bridge SMPS primary-side topology, the IRS2302STRPBF drives two primary MOSFETs at up to 600 V bus with symmetric timing. The built-in UVLO on both VCC and VBS prevents partial-turn-on switching that would otherwise dissipate excessive switching loss, and the dV/dt immunity of the floating high-side channel handles the hard-switching transients of the phase node. Bootstrap operation eliminates the need for an isolated gate-drive supply for the high side, reducing BOM cost. The 0.35 A sink current ensures fast turn-off, limiting shoot-through losses in 100-300 kHz LLC and hard-switched half-bridge converters up to 500 W.
Recommended
Solar Micro-Inverter Power Stage
The IRS2302STRPBF is appropriate for grid-tied solar micro-inverter power stages that require driving a half-bridge from a 380-400 V DC link. Its 600 V floating channel handles the maximum DC bus voltage with adequate derating, while the 0.2 A source / 0.35 A sink drive currents are sufficient for driving CoolMOS or IGBT power switches at the 20-100 kHz switching frequencies typical of residential micro-inverters. The shutdown pin enables fast anti-islanding protection by disconnecting the half-bridge within one PWM cycle on grid-fault detection. Combined with an MPPT controller and a PFC stage, the IRS2302STRPBF supports EN50549-compliant 230 V AC output from a single 600 V stage.
Recommended
Uninterruptible Power Supply (UPS) Inverter
In a line-interactive or on-line UPS, the IRS2302STRPBF drives the half-bridge inverter stage that converts 48 V or 192 V battery DC into 230 V AC mains. The 600 V offset rating handles 192 V battery-link designs, and the matched channel delays ensure clean 50/60 Hz sine synthesis with low harmonic distortion. Hardware shutdown via the SD pin provides emergency disconnect within microseconds, complementing the firmware-driven battery management system. Combined with an output LC filter and a feedback controller, the IRS2302STRPBF supports 500 VA to 2 kVA UPS designs for SOHO and small-server backup power.
Recommended
Induction Heating Inverter
The IRS2302STRPBF is well-suited to drive the resonant half-bridge in induction-heating cooktops and RF induction heaters. Its 600 V offset handles 220-380 V rectified mains, while the 0.35 A sink current provides fast turn-off that limits shoot-through losses in the 20-100 kHz resonant switching cycles. The matched propagation delays and built-in cross-conduction prevention simplify timing-critical zero-voltage switching (ZVS) designs. The shutdown pin enables hardware-level emergency stop, mandatory in appliance-grade induction cooking equipment.
Recommended
Class D Audio Amplifier Output Stage
In a half-bridge Class D audio amplifier, the IRS2302STRPBF drives the output MOSFETs that synthesize an audio-frequency PWM signal from the audio input. The matched 220 ns propagation delays minimize distortion by keeping high-side and low-side pulses phase-accurate, while the 0.35 A sink current enables fast switching transitions that limit dead-time distortion above the 20 kHz audio band. The 600 V rating supports high-power amplifier designs up to several kilowatts, while the built-in UVLO prevents audible clicks during power-up. For full H-bridge audio amplifiers, two IRS2302STRPBF channels are paired with an audio-modulation controller.
Recommended
Recommended Products Summary
Engineering reference data for IRS2302STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2302SPBF | IRS2127STRPBF | IR21064STRPBF | IR21531STRPBF | IRS2109STRPBF | IRS4428STRPBF | IRS2153DSTRPBF |
|---|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC (SOIC-8N) | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same |
| Driver Configuration | Half-Bridge (High + Low Side, Independent) | Half-Bridge - identical | High-Side only | Half-Bridge | Half-Bridge (self-oscillating) | Half-Bridge | Low-Side only | Half-Bridge (self-oscillating) |
| High-Side Offset Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | N/A (low-side only) | 600 V |
| Source Current (typ.) | 0.2 A | 0.2 A | 0.2 A | 0.13 A | 0.21 A | 0.12 A | 0.6 A | 0.21 A |
| Sink Current (typ.) | 0.35 A | 0.35 A | 0.4 A | 0.27 A | 0.42 A | 0.25 A | 1.5 A | 0.42 A |
| Shutdown Pin | Yes (dedicated SD, active low) | Yes | Yes | Fault clear (replaces SD) | No (self-oscillating) | Split enable/disable logic | N/A (low-side only) | No (self-oscillating) |
| UVLO | Yes (VCC + VBS) | Yes (VCC + VBS) | Yes (VCC + VBS) | Yes (VCC + VBS) | Yes (VCC + VBS) | Yes (VCC + VBS) | VCC only | Yes (VCC + VBS) |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | Not applicable (internal oscillator) | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | Not applicable (internal oscillator) |
| Unit Price (qty 1, USD, as of 2026-09-14) | 1.18 | 1.10 (Tube, est.) | 1.32 | 1.45 | 1.05 | 1.28 | 0.95 | 1.22 |
Key Differentiators
- Dedicated shutdown (SD) pin with hardware fault propagation (vs IR21531STRPBF)
- Asymmetric source/sink drive for MOSFET gate-charge asymmetry (vs IRS4428STRPBF)
- Integrated cross-conduction prevention with matched propagation delays (vs IR21064STRPBF)
Design Notes
Place the VCC bypass capacitor (typically 0.1 uF ceramic plus 10 uF tantalum or aluminum-polymer) as close as possible to pins 1 (VCC) and 5 (VSS) to keep the high di/dt return currents out of the logic-ground traces. Use a separate analog ground island tied to VSS at a single point to avoid digital-to-analog ground bounce on the SD input. The VBS-to-VS capacitor (0.1 uF to 1 uF low-ESR ceramic) must be placed within 5 mm of pins 6 (VS) and 8 (HO/VBS) to minimize switching ringing on the high-side supply rail.
Size the bootstrap capacitor to limit voltage droop during the high-side on-time. The droop is approximately Vdroop = Qg_total / CBOOT, where Qg_total is the high-side MOSFET gate charge. For a 50 nC gate charge and a target droop of less than 0.5 V (below the VBS UVLO threshold by at least 0.5 V), CBOOT must be at least 0.1 uF; for 100 nC gate charge use at least 0.22 uF. Add a local 0.1 uF ceramic in parallel to suppress high-frequency ringing. Choose a fast-recovery bootstrap diode with trr less than 100 ns and a low forward drop (Schottky preferred for VCC up to 15 V; ultrafast recovery for higher VCC).
Do not connect the SD pin to a slow analog signal without a small RC filter, as noise on SD can cause spurious shutdown events. If the application does not need shutdown, tie SD to VCC through a 10 kohm pull-up resistor. Avoid routing the phase node (VS) under the device or any logic-level traces, as the dV/dt of the phase node can inject noise into the high-side well. For the floating high-side supply, never exceed 600 V offset between VSS and VS; even brief over-voltage transients can permanently damage the HVIC junction isolation.
The IRS2302STRPBF in 8-SOIC has a thermal resistance theta_JA of approximately 150 C/W on a 1-oz 1-square-inch copper pad. With typical 0.2 A drive into 50 nC gate charge at 50 kHz, the IC dissipates approximately 0.5 mW per channel of gate-drive loss, which is negligible. However, if the SD pin is held low for extended periods under high ambient temperatures, the quiescent current may increase the IC temperature. For high-temperature applications (>100 C ambient), increase PCB copper area around the exposed VSS pad or use a small forced-air cooling path to maintain junction temperature below 125 C maximum rating.
Compliance Information
RoHS compliant and halogen-free per Infineon product page and DigiKey listing. MSL-2 per JEDEC J-STD-020. Not AEC-Q100 qualified; for automotive applications select AEC-Q100-qualified drivers in the Infineon portfolio or migrate to IRS2334MTRPBF (industrial grade, in stock on XAIPART).
