IRF150DM115XTMA1 - 150V OptiMOS 5 N-FET | Infineon
MPN: IRF150DM115XTMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.45 | $34.50 |
| 100 | $2.95 | $295.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.2 | $2,200.00 |
IRF150DM115XTMA1 Overview
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device used to switch or amplify signals in power electronics. In the power hierarchy it sits under the broader categories of discrete semiconductor -> transistor -> FET -> power MOSFET. OptiMOS 5 is Infineon's fifth-generation 150 V trench technology, which combines a very low on-resistance per area with a low gate charge to deliver an excellent FOM (RDS(on) x QG figure of merit).
Key specifications include an exceptionally low on-resistance per die area, low gate charge, 100% avalanche-tested ruggedness, and a normal-level (standard) gate threshold that is compatible with typical 12 V gate-drive signals. The DirectFET package removes the internal wire bonds used in conventional DPAK/TO-220 parts, which dramatically lowers source-inductance and improves both switching speed and thermal performance. Because the package can be cooled from both top and bottom, system designers can extract more power from the same PCB footprint.
Typical applications include synchronous rectification stages in telecom and server DC-DC bricks, battery protection and hot-swap in 48 V e-mobility tools, photovoltaic module-level power electronics, and the high-side/low-side switches in BLDC motor drives. The combination of low RDS(on) and DirectFET thermal performance makes it attractive where board area is at a premium.
When designing with this part, ensure the gate-drive voltage is high enough to fully enhance the channel (10 V recommended) and that the layout keeps the high-current loop area as small as possible to leverage the package's low parasitic inductance. This page combines distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRF150DM115XTMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF150DM115XTMA1 (same form factor and footprint) β differing in Package, Technology, Drain-Source Voltage (VDS), Mounting Type, Avalanche Rated.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF150DM115XTMA2
β Drop-Inπ Reference alternative (not in catalog)
IRF150DM115XTMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$2.2 / Unit
View Datasheet βIPP075N15N3GXKSA1
β Drop-Inβ In Stock
$1.92 / Unit
View Datasheet βBSC019N04LSTATMA1
β Drop-Inβ In Stock
$1.21 / Unit
View Datasheet βIRF150DM115XTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IRF150DM115XTMA1 |
| Technology | OptiMOS 5 (N-channel, normal level) |
| Drain-Source Voltage (VDS) | 150 V |
| Avalanche Rated | 100% avalanche tested |
| Package | DirectFET (double-side cooled, ultra-thin) |
| Mounting Type | Surface Mount |
| Polarity / Channel Type | N-Channel |
| RoHS Status | Compliant (lead-free per datasheet) |
| Gate Drive Level | Normal-level (10 V drive) |
IRF150DM115XTMA1 Pin Configuration
| Pin 1 | Gate (G) β Gate drive input, 10 V recommended for full enhancement |
| Pin 2 | Source (S) β Source pad, also bottom-side thermal pad connection |
| Pin 3 | Drain (D) β Drain pad, top and bottom side for double-sided cooling |
| Pin 4 | Thermal Pad β Exposed metal can; doubles as drain thermal connection |
Safe Operating Area (DC)
Typical Applications
IRF150DM115XTMA1 is suitable for 6 applications: Synchronous Rectification in 48 V DC-DC Converters, Photovoltaic Module-Level Optimisers, Cordless Power Tool Motor Drives, Hot-Swap and Battery Protection in 48 V e-Mobility, BLDC Motor Control High-Side/Low-Side Switches, Telecom and Server DC-DC Brick Converters.
Synchronous Rectification in 48 V DC-DC Converters
The IRF150DM115XTMA1's 150 V VDS rating comfortably covers 48 V nominal rails with margin for transient spikes, while the DirectFET package's ultra-low source inductance minimises switching loss in the synchronous FET position. Its low RDS(on) keeps conduction loss down at high current, and double-sided cooling allows power density far beyond a DPAK. In a typical 48 V to 12 V buck converter the part operates as the low-side synchronous FET at 200-500 kHz, where its low gate charge reduces drive loss. Source: Infineon IRF150DM115 datasheet.
Recommended
Photovoltaic Module-Level Optimisers
Photovoltaic optimisers require MOSFETs that handle 40-80 V module DC voltage and fit into the slim, potted enclosure behind the panel. The IRF150DM115XTMA1 with its 150 V rating provides a comfortable safety margin and OptiMOS 5's low on-resistance minimises the efficiency penalty that optimisers add to every panel. The DirectFET package's ultra-thin profile (~0.5 mm) makes it ideal for the low-clearance housing. It can also dissipate heat to the aluminium back of the enclosure for double-sided cooling. Source: Infineon IRF150DM115 product page.
Recommended
Cordless Power Tool Motor Drives
Cordless power tools running on 18-72 V battery packs need rugged, compact FETs to drive the BLDC motor at high PWM frequency. The IRF150DM115XTMA1 handles the inductive kick-back from motor windings thanks to its 150 V rating and 100% avalanche-tested ruggedness, while its low gate charge keeps the gate-drive losses small at 50-100 kHz PWM. The DirectFET package withstands the high-vibration, high-temperature environment inside a tool handle. Source: Infineon IRF150DM115 datasheet, features section.
Recommended
Hot-Swap and Battery Protection in 48 V e-Mobility
E-mobility battery packs at 48 V nominal can reach 100-120 V under load dump and transient conditions, well within the IRF150DM115XTMA1's 150 V VDS rating. Its low RDS(on) minimises the voltage drop across the protection FET during high inrush currents, while its 100% avalanche rating absorbs the energy of an unplugged connector arc. The DirectFET package can be cooled through the bus bar itself, eliminating a separate heatsink. Source: Infineon OptiMOS 5 product family description.
Recommended
BLDC Motor Control High-Side/Low-Side Switches
Industrial BLDC drives use a three-phase half-bridge topology with FETs rated for 100-150 V to handle motor back-EMF at high RPM. The IRF150DM115XTMA1 suits the high-side position where its low gate charge and OptiMOS 5 switching figures-of-merit keep switching losses down at 20-50 kHz PWM. The double-side-cooled DirectFET allows the FETs to be mounted directly to the metal chassis, simplifying the thermal design. Source: Infineon IRF150DM115 product page, target applications.
Recommended
Telecom and Server DC-DC Brick Converters
Isolated 48 V to POL DC-DC bricks for telecom and server use need FETs on the primary side rated for 150 V to handle the 36-75 V telecom input range plus transformer ring. The IRF150DM115XTMA1 works as the primary-side switch where its low RDS(on) reduces conduction loss at full load and its OptiMOS 5 figure-of-merit (FOM) minimises total losses at 250-500 kHz. The DirectFET package allows the brick to be very thin - critical for 1U server form factors. Source: Infineon OptiMOS 5 cross-reference brief.
Recommended
Recommended Products Summary
Engineering reference data for IRF150DM115XTMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF150DM115XTMA2 | IRF150DM115XTMA1-Q | IPP075N15N3GXKSA1 | BSC019N04LSTATMA1 |
|---|---|---|---|---|---|
| Package | DirectFET (double-side cooled) | DirectFET (double-side cooled) | DirectFET (double-side cooled) | TO-220 equivalent (PG-TO-220-3) | DirectFET (SuperSO8 footprint family) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS (V) | 150 V | 150 V | 150 V | 150 V | 40 V |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| RDS(on) Class (typ) | Very low (OptiMOS 5 FOM) | Very low (same die) | Very low (same die) | Low (TO-220, ~75 mOhm class) | Very low (1.9 mOhm @ 40 V) |
| Avalanche Rated | Yes (100% tested) | Yes (same die) | Yes (same die) | Yes | Yes |
| Cooling Path | Double-sided (top + bottom) | Double-sided (same) | Double-sided (same) | Bottom-side only (TO-220 tab) | Bottom-side only |
| Mounting Style | SMD (DirectFET) | SMD (DirectFET) | SMD (DirectFET) | Through-hole (TO-220) | SMD |
| RoHS / Lead-Free | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Double-sided cooling in an ultra-thin package (vs IPP075N15N3GXKSA1 (TO-220 equivalent))
- OptiMOS 5 FOM advantage (vs Older IRF150 (TO-3 legacy part))
- 150 V rating for 48 V and PV applications (vs BSC019N04LSTATMA1 (40 V OptiMOS 5))
Design Notes
Estimated: at PD = 50 W and DirectFET theta_JA of ~25 C/W (with double-side cooling), the junction temperature rises about 1250 C above ambient - clearly only realistic with a proper cold plate or aluminium enclosure. The DirectFET package is designed to be mounted directly to a thermal spreader or chassis, and the datasheet specifies layouts for both top-side and bottom-side thermal paths. For high-current designs, mount the FET between two thermal interfaces; the can must be electrically isolated if the drain tab is also used as the thermal pad.
The DirectFET package is leadless, so the PCB land pattern is the only electrical and thermal interface. Follow the Infineon reference land pattern exactly - any deviation in pad size will degrade thermal performance and may cause solder-joint fatigue. Use NSMD pads where possible to improve solder joint reliability, and place the gate drive loop area as small as possible to leverage the package's ultra-low source inductance.
Do not assume DirectFET pin maps from one Infineon part family match another - even within Infineon's portfolio the DirectFET pad assignments differ (gate-on-pad-1 vs pad-3, etc.). Always check the mechanical drawing in the specific datasheet before PCB layout. Also, the package metal can is normally the drain - connecting it to source or gate will short-circuit the die.
Use a 1-oz copper inner layer as a thermal spreader directly under the DirectFET pad, with thermal vias (0.3 mm drill, 0.5 mm pitch) connecting top, inner and bottom copper. This is critical to realise the double-sided cooling benefit promised by the package - without inner copper the bottom-side cooling path is starved.
Compliance Information
Lead-free and RoHS compliant per Infineon datasheet features list. AEC-Q100 status not stated for this part; the IRF150DM115 is not an automotive-qualified variant.
