IRS2005STRPBF - 200V Half-Bridge Gate Driver IC | Infineon
MPN: IRS2005STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.44 | $0.44 |
| 10 | $0.34 | $3.40 |
| 30 | $0.3 | $9.00 |
| 100 | $0.25 | $25.00 |
| 500 | $0.21 | $105.00 |
| 1,000 | $0.18 | $180.00 |
IRS2005STRPBF Overview
A gate driver IC is a power management semiconductor that translates low-power logic-level PWM signals (typically 3.3 V or 5 V from a microcontroller or DSP) into high-current drive signals capable of rapidly charging and discharging the gate capacitance of a power switch. Within the broader system hierarchy, gate drivers sit between the control IC and the power stage, falling under the category of driver ICs, then power management ICs, then power semiconductors. The IRS2005STRPBF belongs to Infineon's EiceDRIVER family and adds rugged monolithic construction with integrated VCC and VBS undervoltage lockout (UVLO) to ensure safe startup in noisy power environments.
Key features include 200 V maximum offset voltage tolerance on the high-side channel, integrated deadtime control, matched propagation delay between channels for low distortion, and logic-level inputs compatible with 3.3 V and 5 V microcontrollers. The 8-SOIC footprint occupies only 3.90 mm of board width, enabling compact motor-drive and SMPS layouts. Logic inputs are Schmitt-triggered to reject noise in industrial environments, and the device operates across the -40 Β°C to +125 Β°C industrial temperature range.
The IRS2005STRPBF uses a floating high-side channel with a bootstrap capacitor technique, allowing the high-side switch to be driven up to 200 V above the switching node. Internal level shifters translate the low-side logic command across the high-voltage domain without requiring an isolated supply. The monolithic HVIC construction eliminates the optocoupler or pulse transformer typically required for galvanic isolation in half-bridge stages, reducing BOM cost and PCB area.
Typical applications include low-power motor drives for BLDC fans and pumps, half-bridge and full-bridge converters in offline SMPS, solar micro-inverters, induction cooker power stages, and Class D audio amplifiers. The wide 200 V rating covers 120 V rectified AC bus voltages with substantial margin.
When designing with the IRS2005STRPBF, ensure the bootstrap capacitor (typically 0.1 Β΅F to 1 Β΅F ceramic) is sized to supply the high-side quiescent current plus gate charge during the entire high-side on-time, otherwise high-side UVLO can trip. Keep the LO and HO output traces short and wide to minimize parasitic inductance, which otherwise produces ringing and possible double-pulsing of the driven MOSFETs.
This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, and practical bootstrap/PCB layout design notes not consolidated in a single location on the manufacturer datasheet.
Drop-in alternatives for IRS2005STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRS2005STRPBF (same form factor and footprint) β differing in Number of Outputs, Package, Mounting Type, RoHS Status, Channel Type.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS2005SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2004SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2005STRPBF Maximum Ratings & Electrical Characteristics
| Function | Half-Bridge Gate Driver |
| Driven Configuration | High-Side and Low-Side (Half-Bridge) |
| Channel Type | Independent |
| Number of Outputs | 2 |
| Logic Type | Non-Inverting |
| Maximum Offset Voltage (High-Side) | 200 V |
| Peak Source Current (typ.) | 0.29 A |
| Peak Sink Current (typ.) | 0.6 A |
| Undervoltage Lockout | VCC and VBS UVLO integrated |
| Input Compatibility | 3.3 V / 5 V logic-level inputs |
| Package / Case | 8-SOIC (0.154", 3.90 mm width) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40 Β°C to +125 Β°C |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| RoHS Status | Compliant (PBF suffix indicates Pb-free) |
IRS2005STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side supply voltage (typ. 10-20 V) |
| Pin 2 | HIN β High-side logic input (3.3 V/5 V compatible, non-inverting) |
| Pin 3 | LIN β Low-side logic input (3.3 V/5 V compatible, non-inverting) |
| Pin 4 | GND β Ground return for VCC and logic inputs |
| Pin 5 | LO β Low-side gate drive output (0.29 A source / 0.6 A sink) |
| Pin 6 | VS β High-side floating supply return / switching node |
| Pin 7 | HO β High-side gate drive output (0.29 A source / 0.6 A sink) |
| Pin 8 | VB β High-side floating bootstrap supply (VB - VS drives HO) |
Typical Applications
IRS2005STRPBF is suitable for 7 applications: BLDC Motor Drive (Low-Power Fans and Pumps), Half-Bridge Converter in Offline SMPS, Solar Micro-Inverter Power Stage, Induction Cooker Resonant Half-Bridge, Class D Audio Amplifier Output Stage, Electronic Ballast for HID / Fluorescent Lamps, Switched-Mode Power Supply (SMPS) Synchronous Rectifier Driver.
BLDC Motor Drive (Low-Power Fans and Pumps)
The IRS2005STRPBF is well suited to low-power three-phase BLDC motor drives in fans, blowers, and small pumps where the DC bus voltage stays under 200 V. Its 0.29 A source / 0.6 A sink drive capability charges and discharges the gate of sub-100 V MOSFETs such as IRFR5305TRPBF or IRFR1205TRPBF within tens of nanoseconds, limiting switching losses. The integrated VCC and VBS UVLO protects the half-bridge from spurious turn-on during power-up and brown-out events common in fan-startup transients. Pair with a small bootstrap capacitor (typically 0.1 Β΅F to 1 Β΅F X7R) to supply the high-side floating rail and the half-bridge becomes a compact two-chip solution.
Recommended
Half-Bridge Converter in Offline SMPS
In half-bridge and asymmetric half-bridge switch-mode power supply topologies, the IRS2005STRPBF drives the two primary-side MOSFETs from a single logic-level PWM input pair. The 200 V offset rating covers 120 V rectified AC bus with substantial safety margin, allowing operation up to ~140 VDC bus. Internal deadtime control prevents shoot-through between the two power switches, while matched propagation delay between channels keeps duty-cycle distortion low. Place a 100 nF to 1 Β΅F X7R ceramic bypass capacitor as close as possible to VCC and the bootstrap diode between VCC and VB to recharge the high-side supply capacitor each cycle.
Recommended
Solar Micro-Inverter Power Stage
Micro-inverters for 30 V to 60 V solar panel strings use a half-bridge or full-bridge stage followed by a high-frequency transformer; the IRS2005STRPBF can drive the primary-side MOSFETs of this isolated topology. Its 3.3 V/5 V logic-level inputs accept the PWM signals directly from a microinverter controller DSP without level translation. The integrated VBS UVLO prevents the high-side switch from turning on while the bootstrap capacitor is below the lockout threshold, eliminating the partial-turn-on losses that degrade efficiency at light load. For higher-voltage string inverters above 200 V, step up to the IRS2005's 600 V family siblings.
Recommended
Induction Cooker Resonant Half-Bridge
Domestic induction cookers use a resonant half-bridge at 20 kHz to 50 kHz switching frequency driving the induction coil through an L-C tank. The IRS2005STRPBF drives the two IGBTs or MOSFETs of this resonant stage, with the 200 V offset rating covering the rectified 220 VAC mains bus. The 0.6 A sink current capability ensures fast turn-off, limiting cross-conduction losses during the resonant commutation. The wide -40 Β°C to +125 Β°C operating range accommodates the high ambient temperatures inside a cooker enclosure. Choose IGBTs such as IGB20N65S5ATMA1 for the lowest conduction loss in this topology.
Recommended
Class D Audio Amplifier Output Stage
Class D audio amplifiers use a half-bridge or full-bridge output stage switching at 250 kHz to 500 kHz to drive a low-pass LC filter and loudspeaker. The IRS2005STRPBF can drive the output MOSFETs in sub-100 W amplifier designs where the bus voltage stays below 200 V. Matched propagation delay between high-side and low-side channels maintains audio linearity and minimizes even-order harmonic distortion. The integrated deadtime prevents shoot-through that would otherwise degrade efficiency and produce audible clicks. For higher-power amplifiers above 200 W, select the IRS2005 family's 500 V or 600 V rated siblings.
Recommended
Electronic Ballast for HID / Fluorescent Lamps
Electronic ballasts for high-intensity discharge (HID) and fluorescent lamps use a half-bridge resonant inverter running at 30 kHz to 100 kHz to drive the lamp through an LC network. The IRS2005STRPBF provides the gate drive for the two low-side and high-side MOSFETs in this topology, where the rectified mains bus is below 200 V in 120 VAC regions. Integrated UVLO protects the half-bridge from low-voltage start-up that would otherwise stress the lamp filaments. The non-inverting logic inputs accept the oscillator's PWM signal directly without external inversion.
Recommended
Switched-Mode Power Supply (SMPS) Synchronous Rectifier Driver
In isolated forward or push-pull SMPS topologies, the synchronous rectifier MOSFETs on the secondary side can be driven by an IRS2005STRPBF through a gate-drive transformer. The independent high-side and low-side channels allow driving two secondary-side synchronous rectifiers from a single logic IC. The 0.6 A sink capability accelerates the turn-off transition of the synchronous MOSFETs, minimizing body-diode conduction time and improving overall efficiency. Verify timing with the primary-side controller's deadtime requirement to avoid cross-conduction.
Recommended
Recommended Products Summary
Engineering reference data for IRS2005STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2005SPBF | IRS2004SPBF |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | 8-SOIC (3.90 mm) | 8-SOIC (3.90 mm) - same | 8-SOIC (3.90 mm) - same |
| Maximum Offset Voltage | 200 V | 200 V | 200 V |
| Driven Configuration | Half-Bridge (High+Low Side) | Half-Bridge (High+Low Side) | Half-Bridge (High+Low Side) |
| UVLO | VCC and VBS integrated | VCC and VBS integrated | VCC and VBS integrated |
| Logic Input Compatibility | 3.3 V / 5 V | 3.3 V / 5 V | 3.3 V / 5 V |
| Carrier Packaging | Tape & Reel (2500) | Tube | Tube |
| Unit Price (qty 1) | $0.44 | $0.44 | $0.36 |
Key Differentiators
- Integrated VCC and VBS UVLO with matched channel propagation delay (vs Discrete bootstrap + optocoupler half-bridge design)
- Higher sink current (0.6 A) than source current (0.29 A) (vs IRS2004SPBF (same family, lower drive))
- 200 V offset rating in 8-SOIC covers 120 VAC rectified bus with margin (vs 100 V gate drivers in same SOIC-8 footprint)
Design Notes
Bootstrap capacitor sizing is critical: the high-side supply (VB-VS) is supplied only by the bootstrap capacitor (CBOOT) recharged through an external diode from VCC each low-side cycle. CBOOT must hold enough charge to supply the high-side quiescent current plus gate-charge (Qg) of the driven MOSFET across the maximum high-side on-time. A 0.1 Β΅F to 1 Β΅F X7R ceramic rated to 50 V is typical. If CBOOT is too small, VBS will drop below the UVLO threshold during long high-side pulses and HO will stop switching, causing the half-bridge to 'fold back'. Use a fast-recovery diode (e.g. UF4007 or Schottky) between VCC and VB, not a slow rectifier.
Keep the LO and HO output traces short and wide (typically 0.5 mm to 1 mm) and place a small gate-series resistor (10 Ξ© to 47 Ξ©) close to the driver output to damp the LC resonance formed by the trace inductance and MOSFET gate capacitance. Without this damping, ringing on the gate can exceed the driver's absolute maximum ratings and cause EMI that fails CE/FCC radiated emissions testing. Place the IRS2005STRPBF within 20 mm of the driven MOSFETs to minimize gate-loop inductance.
Estimated: at VCC = 15 V, VBS = 15 V, switching frequency = 100 kHz with Qg(total) = 50 nC, the IRS2005STRPBF internal dissipation is roughly PD = VCC Γ IQCC + (VCC + VBS) Γ Qg Γ fsw β 15 V Γ 1 mA + 30 V Γ 50 nC Γ 100 kHz β 0.17 W. The 8-SOIC package has theta_JA β 150 Β°C/W, giving a junction temperature rise of ~26 Β°C above ambient - well within the 125 Β°C rating. At 500 kHz the dissipation scales to ~0.78 W and the rise becomes ~117 Β°C, requiring thermal relief or a smaller Qg MOSFET.
Do not leave the HIN or LIN input floating: unused inputs must be tied to VCC (for default-high) or GND (for default-low) to prevent spurious switching from PCB leakage currents. Do not exceed the maximum VBS supply voltage of 20 V (or 25 V absolute maximum) - if the bootstrap diode and capacitor allow VBS to over-charge at low duty cycle, add a 15 V Zener clamp from VB to VS. Do not apply voltages above the absolute maximum on VS or VB relative to GND; the IRS2005 is rated to 200 V offset but only with VBS supply within its rated range.
Compliance Information
PBF suffix indicates lead-free / RoHS-compliant per Infineon ordering information. Not AEC-Q100 qualified - this is a commercial/industrial grade part. For automotive designs, verify whether an -Q suffix variant exists in the same family.
