IRS2181STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN: IRS2181STRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.32 | $1.32 |
| 10 | $1.18 | $11.80 |
| 100 | $0.98 | $98.00 |
| 500 | $0.82 | $410.00 |
| 1,000 | $0.7 | $700.00 |
| 2,500 | $0.62 | $1,550.00 |
IRS2181STRPBF Overview
A gate driver IC such as the IRS2181STRPBF belongs to the power-management semiconductor family, specifically the high-side/low-side (HS/LS) driver subcategory. In a switched-mode power architecture, the gate driver sits between a low-power control IC (microcontroller, DSP, or analog controller) and the high-power switching devices (MOSFETs or IGBTs). Its function is to translate low-current logic-level PWM signals into high-current drive signals capable of rapidly charging and discharging the gate capacitance of power transistors, which keeps switching losses low and prevents shoot-through. The IRS2181 family uses a bootstrap capacitor on the VB pin to derive the floating supply for the high-side channel, eliminating the need for an isolated DC/DC converter in many motor-drive and inverter applications.
Key features of the IRS2181STRPBF include a wide VCC range of 10 V to 20 V, 600 V absolute maximum offset voltage, 1.9 A typical source / 2.3 A typical sink output drive current, under-voltage lockout (UVLO) for both VCC and VBS rails, matched propagation delay between channels, and logic inputs that are 3.3 V compatible. A shutdown pin (SD) is provided, and the logic polarity is non-inverting on both high-side and low-side outputs, which simplifies firmware and timing design. The 8-pin SOIC package offers a small footprint that is compatible with standard reflow profiles and is suitable for high-density PCB layouts.
Architecturally, the IRS2181 combines a floating high-side well capable of withstanding 600 V transient swings, a low-side driver referenced to VCC/GND, and a CMOS input stage with internal pull-downs. The high-side channel includes its own level shifter that translates the low-side HIN PWM signal up to the floating VB supply. A built-in dead-time control is not present; the IRS2181 relies on the controller to insert dead time externally, which gives designers flexibility in tuning switching behavior. The latch-immune CMOS process minimizes dv/dt-induced false triggering that historically plagued discrete bootstrap driver designs.
Typical applications include variable-frequency motor drives for HVAC and small appliances, low-power DC/AC solar micro-inverters, switch-mode power supplies (SMPS) with synchronous rectification, electronic ballasts for HID and fluorescent lighting, induction-heating cooktops, and class-D audio amplifiers. The device is also widely used in three-phase inverter modules for BLDC and PMSM motors when paired with three IRS2181 devices (one per phase) plus a controller such as the IRMCF143 or a TI C2000 MCU. In each case, the IRS2181STRPBF's 600 V rating comfortably covers 230 VAC rectified (≈325 V) and 120 VAC rectified (≈170 V) bus rails with substantial safety margin.
A primary design consideration is the bootstrap capacitor sizing: CB must hold VBS above the UVLO threshold for the longest high-side on-time. A conservative formula uses CB ≥ QG(MAX)/ΔVBS, with a safety factor of 2x to 5x. For a 100 nC gate charge and 200 mV allowable droop, CB ≥ 0.5 µF; designers often select 1 µF to 4.7 µF X7R ceramics. The bootstrap diode must be a fast-recovery type (≤100 ns trr) rated for the full DC bus voltage.
This page synthesizes distributor pricing, drop-in SOIC-8 alternatives from the same IRS2181/IRS2184 family and competing half-bridge drivers, and practical bootstrap design guidance not collected in any single manufacturer datasheet.
Drop-in alternatives for IRS2181STRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRS2181STRPBF (same form factor and footprint) — differing in Configuration, Package, Number of Outputs, Input Logic Compatibility, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRS2181SPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IR2104STRPBF
✅ Drop-In✓ In Stock
$0.59 / Unit
View Datasheet →IRS21171STRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRS2011STRPBF
✅ Drop-In✓ In Stock
$1.55 / Unit
View Datasheet →IRS4427STRPBF
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →NCP5106BDR2G
✅ Drop-In📋 Reference alternative (not in catalog)
L6384ED013TR
✅ Drop-In📋 Reference alternative (not in catalog)
IRS2181STRPBF Maximum Ratings & Electrical Characteristics
| Function | Half-Bridge Gate Driver |
| Configuration | High-side and low-side referenced, non-inverting |
| Number of Outputs | 2 (HO, LO) |
| Offset Voltage (max) | 600 V |
| VCC Supply Voltage | 10 V to 20 V |
| VBS Bootstrap Supply Voltage | 10 V to 20 V (referenced to VS) |
| Output Source Current (typ) | 1.9 A |
| Output Sink Current (typ) | 2.3 A |
| Logic Input Compatibility | 3.3 V and 5 V logic |
| Under-Voltage Lockout (UVLO) | Present on VCC and VBS |
| Shutdown Pin (SD) | Yes, active-low compatible input stage |
| Operating Temperature Range | -40 C to +125 C (junction) |
| Package | 8-pin SOIC (SO-8, 0.154" / 3.90 mm body width) |
| Mounting Type | Surface Mount |
| Lead Finish | Pb-free (PBF suffix) |
| RoHS Compliance | Compliant (Pb-free) |
IRS2181STRPBF Pin Configuration
| Pin 1 | VCC — Logic and low-side supply voltage (10 V to 20 V) |
| Pin 2 | HIN — Logic input for high-side gate driver output (HO), non-inverting |
| Pin 3 | LIN — Logic input for low-side gate driver output (LO), non-inverting |
| Pin 4 | SD — Shutdown input - logic low disables both HO and LO outputs |
| Pin 5 | COM — Low-side return / ground reference for VCC and LO |
| Pin 6 | LO — Low-side gate drive output referenced to COM |
| Pin 7 | VS — High-side floating supply return / bootstrap capacitor negative terminal |
| Pin 8 | HO — High-side gate drive output referenced to VS |
Typical Applications
IRS2181STRPBF is suitable for 6 applications: BLDC Motor Drive (24-48 V DC Bus), 230 VAC Solar Micro-Inverter, Electronic Ballast (HID / Fluorescent), Switch-Mode Power Supply with Synchronous Rectification, Induction-Heating Cooktop, Class-D Audio Amplifier Output Stage.
BLDC Motor Drive (24-48 V DC Bus)
The IRS2181STRPBF is a strong fit for 24 V to 48 V brushless DC motor half-bridge stages in SO-8 packages. Its 1.9 A source / 2.3 A sink current drives typical 40 V-100 V MOSFETs with gate charges under 50 nC in tens of nanoseconds, keeping switching losses small at 20-50 kHz PWM. Its 600 V offset rating leaves huge margin over the 48 V bus, improving robustness against inductive transients. The shutdown pin enables fast fault response for overcurrent protection, and the SO-8 footprint fits compact motor-control PCBs.
Recommended
230 VAC Solar Micro-Inverter
In a 230 VAC micro-inverter the rectified DC bus reaches approximately 325 V, well within the IRS2181STRPBF's 600 V offset rating. Its 10-20 V VCC range is compatible with standard auxiliary supplies derived from the bus, and its bootstrap driver eliminates the need for an isolated DC/DC converter to drive the upper MOSFET. With 1.9 A / 2.3 A drive current it switches IGBTs and high-voltage MOSFETs at 16-50 kHz with low loss. The 8-pin SOIC keeps the inverter PCB small and low-cost.
Recommended
Electronic Ballast (HID / Fluorescent)
For HID and fluorescent electronic ballasts the IRS2181STRPBF drives the resonant half-bridge at 30-100 kHz from a rectified 230 VAC bus (about 325 V DC). Its 600 V rating handles the bus with margin, and its matched high-side / low-side propagation delay keeps the resonant tank balanced, reducing acoustic noise and improving lamp life. The 8-pin SOIC and small footprint enable ultra-compact ballast designs where PCB area is at a premium. UVLO on VCC prevents lamp flicker at low-line brownout conditions.
Recommended
Switch-Mode Power Supply with Synchronous Rectification
In an SMPS with synchronous rectification the IRS2181STRPBF drives the synchronous-rectifier MOSFETs in a half-bridge or push-pull topology from a 12 V or 24 V input. Its 1.9 A / 2.3 A source/sink current keeps the SR MOSFETs switching fast at 100-500 kHz, reducing conduction loss. The 8-pin SOIC footprint simplifies layout on dense primary-side power boards, and the logic-compatible inputs interface directly with most PWM controller ICs. UVLO protects the SR stage during startup transients.
Recommended
Induction-Heating Cooktop
In an induction-heating cooktop the IRS2181STRPBF drives a resonant half-bridge at 20-50 kHz from a rectified 325 V DC bus. Its 600 V offset rating provides substantial margin against resonant tank overshoot and inductive kick. The high peak gate drive current (1.9 A source) enables fast switching of high-current IGBTs, which keeps switching losses low and improves cooking efficiency. The shutdown pin allows rapid disable in response to pan-detection or over-temperature faults for safety compliance.
Recommended
Class-D Audio Amplifier Output Stage
In a class-D audio amplifier the IRS2181STRPBF drives the output half-bridge MOSFETs that deliver the PWM audio signal to the LC low-pass filter and loudspeaker. Its matched channel-to-channel propagation delay preserves audio timing accuracy and reduces distortion, while 1.9 A / 2.3 A source/sink current enables 200-500 kHz switching with reasonable MOSFET sizes. UVLO prevents audible clicks during power-up and power-down sequencing. The 8-pin SOIC keeps amplifier boards compact for slim consumer products.
Recommended
Recommended Products Summary
Engineering reference data for IRS2181STRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2181SPBF | IR2104STRPBF | IRS21171STRPBF | NCP5106BDR2G | L6384ED013TR |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | STMicroelectronics |
| Package | SOIC-8 | SOIC-8 (same) | SOIC-8 (same) | SOIC-8 (same) | SOIC-8 (same) | SOIC-8 (same) |
| Offset Voltage (max) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Source / Sink Drive Current | 1.9 A / 2.3 A | 1.9 A / 2.3 A | 0.21 A / 0.36 A | 1.0 A / 1.0 A | 1.0 A / 1.0 A | 0.4 A / 0.65 A |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| UVLO on VCC and VBS | Yes (both rails) | Yes (both rails) | Yes (VCC only) | Yes (both rails) | Yes (both rails) | Yes (both rails) |
| Shutdown Pin (SD) | Yes | Yes | No | Yes | Yes | Yes |
| Logic Polarity | Non-inverting | Non-inverting | Inverting (HIN/SD logic) | Non-inverting | Non-inverting | Non-inverting |
| Integrated Bootstrap Diode | No | No | No | No | No | Yes |
Key Differentiators
- Higher peak drive current than the IR2104 family (vs IR2104STRPBF)
- Integrated shutdown pin for fault response (vs IRS21171STRPBF)
- Same SO-8 footprint as ON Semi NCP5106 with higher drive current (vs NCP5106BDR2G)
Design Notes
Bootstrap capacitor sizing is critical for reliable high-side operation. Use CB >= (QG_max * 2) / (VCC - UVLO_threshold - Vf_bootstrap) as a starting point. For a typical 100 nC gate charge and 1 V allowable droop on VBS, a 0.22 uF to 1 uF X7R ceramic at the VB pin is appropriate. The bootstrap diode must be an ultrafast-recovery type (trr <= 100 ns) rated for the full DC bus voltage; UF4007 or ES1J are common low-cost choices. Add a small resistor (3-10 ohm) in series with the bootstrap diode to limit inrush current during VBS recharge.
Keep the high-current gate-drive loop (HO -> gate -> source -> VS -> VB decoupling -> HO) as small as possible to minimize parasitic inductance. Place the VBS decoupling capacitor (0.1 uF to 1 uF) directly between pins 7 (VS) and 8 (HO bypass to VB) with short traces. Use a 4-layer PCB with a continuous ground plane under the driver for best EMI performance. Keep the high-side loop area below approximately 1 square centimeter to avoid ringing above 100 MHz that can radiate EMI.
Do not operate the IRS2181STRPBF above 600 V offset between VB and COM - even brief transients above this rating can permanently damage the high-side level-shifter. Always include a snubber or TVS clamp across the half-bridge to limit dv/dt-induced overshoot. Ensure that VCC does not drop below the UVLO threshold during high-side switching; if it does, the high-side output can latch in an undefined state. Finally, do not leave the SD pin floating - tie it high through a 10 kohm resistor to VCC if unused.
Compliance Information
Pb-free (PBF suffix) per Infineon product page; RoHS and REACH compliance stated by the manufacturer. Not AEC-Q100 qualified (industrial/commercial grade). Halogen-free status not explicitly stated in the verified data.
