K4RAH086VP-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung
MPN: K4RAH086VP-BCWM ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.6 | $116.00 |
| 100 | $10.8 | $1,080.00 |
| 500 | $10.1 | $5,050.00 |
| 1,000 | $9.5 | $9,500.00 |
Drop-in alternatives for K4RAH086VP-BCWM — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K4RAH086VE-BCWM
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$7.6 / Unit
View Datasheet →K4RAH086VB-BCWM
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View Datasheet →K4RAH086VB-BCQK
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View Datasheet →K4RAH086VB-BIWM
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$4.85 / Unit
View Datasheet →K4RAH086VB-BIQK
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$4.25 / Unit
View Datasheet →K4RAH086VP-BCWM
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View Datasheet →K4RAH086VP-BCWM Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Memory Size | 16 Gb |
| Memory Organization | 2G x 8 |
| Data Rate | 5600 Mbps/pin |
| Supply Voltage (VDD) | 1.1 V |
| Interface | Parallel (DDR5) |
| Memory Format | DRAM (volatile) |
| Speed Grade | BCWM (DDR5-5600) |
| Application Class | Industrial |
| Configuration | 2G x 8 (16 Gb) |
| Mounting Type | Surface Mount (FBGA BGA) |
| Packaging | Tray |
| Lifecycle Status | Active |
| Manufacturer | Samsung Semiconductor |
K4RAH086VP-BCWM [data_needed: package dimensions] Pin Configuration Guide
Complete pinout information for K4RAH086VP-BCWM ([data_needed: package dimensions] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: package dimensions] package pinout diagram for K4RAH086VP-BCWM](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K4RAH086VP-BCWM.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RAH086VP-BCWM is suitable for 6 applications: Industrial Compute Modules, Server and Workstation RDIMMs, Edge Computing Gateways, Embedded Industrial Controllers, Networking and Communications Equipment, Test and Measurement Instrumentation.
Industrial Compute Modules
The K4RAH086VP-BCWM's industrial application class, 1.1 V DDR5 supply, and 16 Gb 2G x 8 organization make it well suited to industrial compute modules and COMs where high bandwidth and long-life sourcing matter. At 5600 Mbps/pin, a single x8 channel delivers substantial throughput for edge analytics workloads. Used as soldered-down DRAM on a carrier board, the device requires a 1.1 V VDD rail and DDR5-compliant routing with on-die ECC offloading error management from the host. Re-run memory training whenever this DDR5 component is substituted or firmware is updated.
Recommended
Server and Workstation RDIMMs
In server and workstation memory subsystems, the x8 organization of the K4RAH086VP-BCWM supports ECC-based DIMM topologies where each data lane is protected by side-band or on-die error correction. The 5600 Mbps speed bin matches PC5-44800-class module bandwidth, and the 1.1 V core supply reduces per-DIMW power versus DDR4. Designers should pair the DRAM with a DDR5 PMIC (RCD plus power management IC) on registered modules, and follow fly-by routing for command/address signals per JEDEC DDR5 module design guidance.
Recommended
Edge Computing Gateways
Edge gateways processing video, protocol translation, or AI inference need memory bandwidth and density without the power budget of server platforms. The K4RAH086VP-BCWM provides 16 Gb per package at 5600 Mbps, allowing two packages (4 GB) to serve a 64-bit DDR5 channel. Its 1.1 V operation and DDR5 on-die ECC improve reliability in unattended deployments. For soldered-down designs, provision the DDR5 VDDQ termination rail and follow the controller's trace-length matching rules; retrain memory after any firmware DRAM configuration change.
Recommended
Embedded Industrial Controllers
Industrial controllers benefit from the K4RAH086VP-BCWM's industrial-grade sourcing path and compact FBGA package. A single 16 Gb x8 device provides enough working memory for control loops, logging, and local analytics. Because DDR5 memory controllers require initialization, leveling, and training sequences, use a processor with a validated DDR5 PHY or a memory reference design. The 1.1 V rail should be sequenced and monitored; DDR5 PMIC-based power control simplifies sequencing versus discrete regulators in these designs.
Recommended
Networking and Communications Equipment
Switches, routers, and 5G transport equipment rely on deep packet buffers, making the K4RAH086VP-BCWM's 16 Gb density and 5600 Mbps bandwidth appropriate for buffer memory alongside network processors. The x8 organization allows narrow channels or ECC-protected links, and DDR5's bank-group architecture reduces row-miss penalties for scattered packet workloads. Designers should verify the memory controller's supported DDR5 speed bins and use the BCWM bin timing parameters from the Samsung datasheet during controller configuration and signal-integrity simulation.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with deterministic latency. The K4RAH086VP-BCWM offers 16 Gb per package at DDR5-5600 rates, supporting long record lengths in compact instruments. Its 1.1 V supply reduces instrument internal heat generation, and on-die ECC enhances capture reliability. Instruments typically solder down DRAM in x8 channels; designers must implement DDR5 training at boot and validate timing margins across temperature, using the Samsung datasheet AC parameters as the qualification baseline.
Recommended
Recommended Products Summary
Engineering reference data for K4RAH086VP-BCWM — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RAH086VE-BCWM | K4RAH086VB-BCWM | K4RAH086VB-BCQK | K4RAH086VB-BIWM | K4RAH086VB-BIQK |
|---|---|---|---|---|---|---|
| Package | FBGA | FBGA - same | FBGA - same | FBGA - same | FBGA - same | FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Memory Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Data Rate | 5600 Mbps/pin | 5600 Mbps/pin | 5600 Mbps/pin | [DATA_NEEDED] bin BCQK - verify | [DATA_NEEDED] bin BIWM - verify | [DATA_NEEDED] bin BIQK - verify |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Technology | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Application Class | Industrial | Industrial | Industrial | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Highest verified stock among family variants (vs K4RAH086VB-BIWM)
- DDR5-5600 speed bin (vs K4RAH086VB-BCQK)
- Same-footprint second-source within Samsung family (vs K4RAH086VE-BCWM)
Design Notes
DDR5 splits power domains: VDD (core, 1.1 V for this part), VDDQ (DQ data), VPP, and separate termination rails. On module designs these are managed by an on-module PMIC; on soldered-down designs provision each rail with local bulk and high-frequency ceramic decoupling. Sequence rails per the Samsung datasheet power-up sequence to avoid latch-up, and monitor inrush since a fully populated DDR5 channel can draw significant transient current at 5600 Mbps burst activity.
At 5600 Mbps/pin, DDR5 relies on DFE (decision feedback equalization) receivers and on-die termination. Follow controller vendor routing rules: matched-length DQS/DQ groups, controlled impedance (typically 40/80 ohm for DDR5), and reference-plane continuity under every data group. Simulate with IBIS models from Samsung and budget eye margins across temperature. Re-run memory training at every firmware or hardware revision affecting trace geometry.
Substituting within the K4RAH086 family (VP vs VB vs VE vs BI grades) keeps the footprint, but speed-bin and temperature-grade codes (BCWM, BCQK, BIWM, BIQK) can alter supported timing and operating range. Qualify the exact bin against the memory controller's training tables; do not assume a lower bin runs at 5600 Mbps. Also confirm RoHS/compliance certificates for the exact MPN before design release, as they were not stated in the distributor data.
Compliance Information
Compliance data not stated in provided distributor listings; confirm via Samsung Semiconductor compliance documentation for this exact MPN.
