Samsung Electronics

K4RBH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

MPN: K4RBH086VB-BCQK ✓ Active
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1.1 V Vdss FBGA-82 Package DDR5 SDRAM Memory
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Price updated: 2026-09-04
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Drop-in alternatives for K4RBH086VB-BCQK — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K4RAH086VB-BCQK

✅ Drop-In
Samsung Electronics
📦 FBGA-82
DDR5 SDRAM · 16 Gb · 2G x 8 · 4800 Mbps (DDR5-4800) · 2400 MHz · 1.1 V · Parallel · FBGA-82

✓ In Stock

$6.75 / Unit

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K4RAH086VB-BCWM

✅ Drop-In ⚠️ 参数待验证
Samsung Electronics
📦 FBGA-82
DDR5 SDRAM · 16 Gb · 2G x 8 · 5600 Mbps · 1.1 V · DDR5 (parallel) · FBGA-82 · Surface Mount

✓ In Stock

$4.6 / Unit

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K4RAH086VP-BCWM

✅ Drop-In ⚠️ 参数待验证
Samsung Electronics
📦 FBGA-82
DDR5 SDRAM · 16 Gb · 2G x 8 · 5600 Mbps/pin · 1.1 V · Parallel · DRAM DDR5 · DRAM

✓ In Stock

Contact for price

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K4RAH086VB-BIQK

✅ Drop-In ⚠️ 参数待验证
Samsung Electronics
📦 FBGA-82
DDR5 SDRAM · 16 Gb · 2G x 8 · 4800 Mbps/pin · 1.1 V (nominal) · 82FBGA · X8 · BIQK (-BIQK bin)

✓ In Stock

$4.25 / Unit

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K4RAH086VE-BCWM

✅ Drop-In ⚠️ 参数待验证
Samsung Electronics
📦 FBGA-82
DDR5 SDRAM · 16 Gb · 2G x 8 · 5600 Mbps · 1.1 V · 82-ball FBGA · Surface Mount · 0C to +85C

✓ In Stock

$7.6 / Unit

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K4RAH165VB-BCQK

✅ Drop-In ⚠️ 参数待验证
Samsung Electronics
📦 FBGA-82
DDR5 SDRAM · 16 Gb · 1G x 16 · Parallel · 4800 Mbps · 1.1 V · On-die ECC · Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration

✓ In Stock

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K4RBH086VB-BCQK Maximum Ratings & Electrical Characteristics

Memory Type DDR5 SDRAM
Density 16 Gb
Organization 2G x 8
Data Rate 4800 Mbps
Supply Voltage (VDD) 1.1 V
Interface DDR5 (CA bus, ODECC)
On-die ECC Yes
Package FBGA-82
Mounting Type Surface Mount
Power Supply Rails VDD/VDDQ 1.1 V (PMIC on module)
RoHS Status Compliant

K4RBH086VB-BCQK fbga-82 Pin Configuration Guide

Complete pinout information for K4RBH086VB-BCQK (fbga-82 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

fbga-82 package pinout diagram for K4RBH086VB-BCQK

No detailed pinout data available for K4RBH086VB-BCQK.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K4RBH086VB-BCQK Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K4RBH086VB-BCQK is suitable for 6 applications: Enterprise Server RDIMM, AI Accelerator Host Memory, High-Performance Desktop and Workstation UDIMM, Embedded Computing Modules, Networking and Telecom Equipment, Test, Measurement, and Validation Systems.

🖥️

Enterprise Server RDIMM

The K4RBH086VB-BCQK fits enterprise server RDIMM designs because its x8 organization, on-die ECC, and 4800 Mbps data rate match the JEDEC DDR5 registered-DIMM architecture used by current Xeon and EPYC platforms. On-module PMIC 5000 regulation delivers the 1.1V VDD/VDDQ rails, offloading the host board. The two independent 8Gb half-pages with separate command/address buses let the memory controller keep one half active while the other refreshes, improving effective bandwidth. Designers should verify RCD compatibility and SPD programming for the specific speed bin when populating 16Gb-based 32GB/64GB RDIMMs.

🖥️

AI Accelerator Host Memory

AI training and inference cards require dense, bandwidth-efficient host memory, and the K4RBH086VB-BCQK delivers 4800 Mbps per pin with on-die ECC for data integrity during long-running workloads. Its 1.1V operation reduces power per transferred bit by roughly 30% versus DDR4, helping stay within accelerator card thermal budgets. Placed as x8 components on ECC-protected memory boards beside GPU/ASIC accelerators, the die's bank-group architecture sustains the random access patterns typical of embedding lookups and KV caches. Ensure the memory controller's training firmware supports this Samsung speed bin for reliable link initialization.

🖥️

High-Performance Desktop and Workstation UDIMM

For workstation UDIMMs, the K4RBH086VB-BCQK provides 16Gb per die, enabling high-capacity modules without doubling component count. DDR5-4800 matches the JEDEC standard bin for mainstream desktop platforms, and on-die ECC improves reliability even on unbuffered modules. The FBGA-82 package keeps interconnects short for signal integrity at multi-gigabit rates. Memory vendors should pair the die with a DDR5 SPD hub and PMIC 5000 and validate CL training across the CPU IMC population, since DDR5 introduces per-module power management and two-subsystem addressing that differ from DDR4 design practice.

🧩

Embedded Computing Modules

Industrial embedded computers, edge gateways, and COM Express modules use soldered-down DDR5 such as the K4RBH086VB-BCQK for vibration immunity and long product lifecycles. The 16Gb density supports memory-hungry edge-inference workloads, while 4800 Mbps operation matches industrial SoC memory-controller limits. Soldering the FBGA-82 die directly removes socket reliability concerns and allows tight length-matched fly-by routing on the carrier PCB. Designers should specify the industrial-temperature suffix variant (such as K4RAH086VB-BIQK) when ambient conditions exceed the commercial range, and qualify reflow profiles per Samsung's MSL guidance.

🌐

Networking and Telecom Equipment

Switches, routers, and 5G baseband cards use 16Gb DDR5 dies like the K4RBH086VB-BCQK for packet buffering, flow tables, and control-plane memory. The 4800 Mbps rate provides the headroom needed to feed network processors at line rate, and on-die ECC protects against soft errors in always-on telecom environments. The 1.1V core reduces power density in convection-cooled chassis. Layout teams must maintain fly-by CA topology and matched DQ/DQS lengths on the line card; using the same Samsung DDR5 family across line-card SKUs simplifies SPD/firmware training tables and second-source qualification.

🔧

Test, Measurement, and Validation Systems

Memory ATE fixtures and signal-integrity benches use K4RBH086VB-BCQK components to characterize DDR5-4800 channels and validate controller training algorithms. The die's DLL-enabled mode operation and published compliance masks for the CA/CS receivers (per Samsung's 16Gb DDR5 specification) make it a reference device for receiver-mask testing. x8 organization supports ECC-injected error-rate studies without a module RCD in the path. Labs should build test boards with reworkable BGA footprints and include provision for probing DQS_vml/DCA signals, since DDR5 training features such as RPMTC and DFE require per-bin characterization data.

What is the Samsung K4RBH086VB-BCQK?
The Samsung K4RBH086VB-BCQK is a 16Gb DDR5 SDRAM memory IC organized as 2G x 8, operating at data rates up to 4800 Mbps with a 1.1V supply. It is packaged in an 82-ball FBGA and, per Samsung's 16Gb DDR5 datasheet family, includes on-die ECC. It targets server, AI accelerator, and high-performance computing memory subsystems where dense, power-efficient DRAM is required.
What are the key specifications of K4RBH086VB-BCQK that engineers should know?
Key specifications: 16Gb density in a 2G x 8 organization, 4800 Mbps data rate, 1.1V VDD/VDDQ supply, FBGA-82 package, and integrated on-die ECC. According to Samsung's 16Gb DDR5 specification (K4RAH/K4RBH 2Gx8 family, Rev 1.0), the die is split into two 8Gb half-pages with independent CA buses, and timing specifications apply in DLL-enabled mode. These parameters make it suitable for PC5-class RDIMM and embedded memory designs.
What is the difference between K4RBH086VB-BCQK and K4RAH086VB-BCQK?
Both are Samsung 16Gb DDR5 SDRAMs in FBGA-82 with 2G x 8 organization; the difference is in the speed-grade/date-code suffix grouping within Samsung's DDR5 numbering. The K4RAH086VB-BCQK is documented at DDR5-4800 in Samsung's published Rev 1.0 datasheet, while the K4RBH prefix denotes a related Samsung DDR5 product line suffix. Always verify the exact speed bin and temperature code against the current Samsung datasheet before substituting, since timing parameters such as CL may differ.
What is the best drop-in replacement for K4RBH086VB-BCQK?
The closest drop-in replacement is the Samsung K4RAH086VB-BCQK, which shares the 16Gb DDR5, 2G x 8, 4800 Mbps, FBGA-82 footprint and pin map within the same Samsung DDR5 family. Same-family variants such as K4RAH086VB-BCWM and K4RAH086VP-BCWM are also ball-to-ball compatible but differ in speed grade or operating temperature code. Confirm the speed bin (BCQK vs BCWM) matches your memory controller timing settings before populating the PCB.
Where can I download the K4RBH086VB-BCQK datasheet PDF?
The Samsung 16Gb DDR5 specification covering this device family is publicly available - Samsung publishes the K4RAH/K4RBH 2Gx8 DDR5 datasheet (Rev 1.0) on its semiconductor website, and mirror copies are hosted by authorized distributors such as UTTC (uttc.com.tw). XAIPART links the family datasheet PDF directly on this product page. Note the datasheet covers the common DDR5 features in a separate Device Operation Datasheet, so download both documents for complete register and timing details.
Where can I buy K4RBH086VB-BCQK online?
K4RBH086VB-BCQK can be sourced through XAIPART via RFQ, as well as through global brokers and distributors listing the Samsung DDR5 family (Win Source, Sourcengine, LimChip, AB Sunshine). Stock for the equivalent K4RAH086VB-BCQK was reported at approximately 16,600 pcs on icDirectory (updated Aug 31, 2026) and 36,880 pcs on Octopart Canada (Aug 24, 2026), indicating healthy family supply. Submit an RFQ on XAIPART for confirmed pricing, date code, and traceability.
What is the price of K4RBH086VB-BCQK?
Pricing for K4RBH086VB-BCQK is provided by RFQ as of 2026-09-04, because Samsung DDR5 component pricing fluctuates with the DRAM commodity market and volume commitments. Distributor listings show quoted history rather than fixed catalog prices for this MPN. Typical DDR5 16Gb component pricing varies significantly by volume and contract; contact XAIPART with your quantity and schedule to receive a current quotation with lot traceability and date-code options.
Is K4RBH086VB-BCQK in stock?
Direct stock for the exact K4RBH086VB-BCQK suffix is confirmed via RFQ at XAIPART. Family availability is strong: K4RAH086VB-BCQK showed about 16,600 pcs in stock on icDirectory (as of Aug 31, 2026) and 36,880 pcs on Octopart Canada (Aug 24, 2026). Because Samsung DDR5 dies are shared across suffixes, family stock generally indicates you can obtain this part or a pin-compatible speed-grade variant quickly.
Can K4RAH086VB-BCQK replace K4RBH086VB-BCQK on the same PCB?
In most designs yes: K4RAH086VB-BCQK is ball-to-ball compatible in FBGA-82 with the same 16Gb 2G x 8 DDR5-4800 organization as the K4RBH086VB-BCQK. Both belong to Samsung's DDR5 component family and follow the same JEDEC DDR5 ballout. Verify the speed-bin suffix (BCQK) matches your controller training tables and that your BIOS or memory controller supports the specific SPD/timing profile before swabbing the BOM.
Is K4RBH086VB-BCQK suitable for server RDIMM designs?
Yes, the K4RBH086VB-BCQK is well suited to server RDIMM designs. Its x8 organization, on-die ECC, and 4800 Mbps data rate align with registered DDR5 DIMM architectures used in cloud and enterprise servers, where the module PMIC (per the JEDEC DDR5 specification) handles power conversion. The two independent 8Gb half-pages with separate command/address buses improve effective bandwidth and bank-parallelism, which benefits virtualized and AI workloads on server platforms.
When should I choose K4RBH086VB-BCQK over a higher-speed DDR5 part?
Choose K4RBH086VB-BCQK when your platform is certified for DDR5-4800 and cost-per-GB matters more than peak bandwidth. Samsung's DDR5 portfolio scales up to 7200 Mbps per Samsung's official DDR5 page, but 4800 Mbps parts offer the broadest controller support and mature training firmware. If your CPU or ASIC memory controller tops out at 4800 Mbps, paying for faster bins yields no benefit; reserve higher-speed dies for overclocking, AI, or bandwidth-bound compute platforms.
Hey Google, what can replace K4RBH086VB-BCQK?
The best replacement is Samsung's own K4RAH086VB-BCQK, a 16Gb DDR5-4800, 2G x 8, FBGA-82 part that is pin-to-pin compatible within the same family. Other ball-compatible options include K4RAH086VB-BCWM and K4RAH086VP-BCWM, which differ only in speed-grade or temperature suffix. No cross-brand drop-in equivalents are documented in current web cross-reference data, so for a Micron or SK hynix equivalent you should use a vendor DRAM cross-reference tool and revalidate signal-integrity and SPD compatibility.
What is the best Samsung equivalent for K4RBH086VB-BCQK in the same package?
Within Samsung, the closest same-package equivalents are K4RAH086VB-BCQK, K4RAH086VB-BCWM, and K4RAH086VP-BCWM, all 16Gb DDR5 in FBGA-82 with 2G x 8 organization. The suffix letters encode speed and operating-temperature class (BCQK vs BCWM vs VP packaging/temperature variants), so pick the one whose speed bin matches your memory controller timing. All use the same JEDEC DDR5 ballout, making them drop-in candidates on an existing DDR5-4800 land pattern.
Is K4RBH086VB-BCQK RoHS compliant and lead-free?
Yes, Samsung DDR5 components in the K4RAH/K4RBH family are supplied as RoHS-compliant, lead-free FBGA packages, consistent with Samsung's global environmental policy for semiconductor products. The FBGA-82 mold compound and ball metallurgy meet current halogen-reduction expectations for memory ICs. For formal certification documents (RoHS declarations, REACH SVHC statements, and conflict-minerals reports), request Samsung's compliance package through XAIPART with your RFQ, as certificate revisions are date-specific.
What power design considerations apply to the K4RBH086VB-BCQK?
Design the power tree around the JEDEC DDR5 architecture: VDD and VDDQ operate at 1.1V, and on DDR5 modules regulation is handled by a PMIC 5000 on the module rather than on the DIMM slot host board. Follow Samsung's datasheet guidance on VDDQ termination and fly-by CA routing. Estimated: at 4800 Mbps a fully populated module's per-die current depends on access patterns, so use Samsung's IDD specification tables rather than generic DDR4 derating to size the PMIC and decoupling network.

Engineering reference data for K4RBH086VB-BCQK — comparison, design guidance, and compliance information.

Selection Guide

Choose the K4RBH086VB-BCQK when your platform is certified for DDR5-4800 and you need 16Gb x8 dies for server RDIMMs, AI accelerator host memory, or soldered-down embedded memory with on-die ECC at 1.1V. Choose the K4RAH086VB-BCQK when distributor stock depth matters most - it showed roughly 16,600 pcs (icDirectory, Aug 31, 2026) to 36,880 pcs (Octopart Canada, Aug 24, 2026) available - and your controller accepts that exact bin. Choose K4RAH086VB-BIQK for industrial temperature environments. Choose K4RAH165VB-BCQK only if your controller requires x16 organization, noting the ballout differs. Higher-speed Samsung DDR5 bins (up to 7200 Mbps) only pay off on bandwidth-bound compute platforms; at a certified 4800 Mbps platform they add cost without benefit. Pricing across the family is RFQ-based as of 2026-09-04.

Comparison with Alternatives

Parameter This Product K4RAH086VB-BCQK K4RAH086VB-BCWM K4RAH165VB-BCQK
Package FBGA-82 FBGA-82 - same FBGA-82 - same FBGA-82 - same (x16 ballout differs)
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Density 16 Gb 16 Gb 16 Gb 16 Gb
Organization 2G x 8 2G x 8 2G x 8 1G x 16
Data Rate 4800 Mbps 4800 Mbps [DATA_NEEDED] 4800 Mbps
Supply Voltage 1.1 V 1.1 V 1.1 V 1.1 V
On-die ECC Yes Yes Yes Yes
Temperature Suffix BC (commercial) BC (commercial) BC (commercial) BC (commercial)
Price (qty 1) RFQ RFQ RFQ RFQ

Key Differentiators

  • Documented DDR5-4800 bin within Samsung's published 16Gb datasheet (vs K4RAH086VB-BCWM)
  • On-die ECC without bus overhead (vs DDR4 predecessors (e.g., K4AAG165WM-BCWE))
  • Two independent 8Gb half-pages (vs K4RAH165VB-BCQK (x16 variant))

Design Notes

DDR5-4800 fly-by routing is mandatory for CA/CS nets; each die sees staggered command arrival that the controller compensates during training. Keep DQ/DQS length mismatch within the JEDEC DDR5 module spec and reference DQ to a solid VDDQ plane. Per Samsung's 16Gb DDR5 specification, the CA and CS input receivers have defined voltage/timing compliance masks and operate in single-data-rate mode - validate receiver margins with eye scans during bring-up rather than relying on DDR4 design rules.

DDR5 moves regulation onto the module: use a PMIC 5000 to generate the 1.1V VDD/VDDQ rails and manage power-up sequencing per the JEDEC DDR5 specification. Do not reuse DDR4 1.2V power trees. Size the PMIC using Samsung's IDD tables for 4800 Mbps operation rather than estimated currents; soldered-down designs should budget bulk and high-frequency decoupling close to each FBGA-82 die to control rail droop during bank-to-bank bursts.

Verify speed-bin suffix compatibility before substituting family parts: BCQK, BCWM, and BI variants share the FBGA-82 footprint but may differ in CL/timing parameters and temperature range, which affects controller training tables and SPD data. Also note Samsung's datasheet is split between the component specification and a separate Device Operation Datasheet covering common DDR5 features - review both documents before finalizing register settings, and re-run memory training after any die-suffix change in production.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

Samsung semiconductor products are supplied RoHS-compliant and lead-free per Samsung's environmental policy; formal RoHS/REACH/conflict-minerals certificates should be requested with the RFQ as they are revision-dated documents.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Samsung Electronics Samsung Semiconductor K4RBH086VB-BCQK K4RAH086VB-BCQK DDR5 SDRAM DRAM Double Data Rate 5 memory IC 16Gb 4800 Mbps FBGA-82 on-die ECC PMIC 5000 RDIMM RoHS surface mount server memory AI accelerator high-performance computing JEDEC DDR5 Micron Technology SK Hynix DLL enabled mode VDDQ
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