MT41K512M16HA-125:A - 8Gb DDR3L SDRAM 1.35V | Micron Technology
MPN: MT41K512M16HA-125:A β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $77.92 | $77.92 |
| 10 | $70.13 | $701.30 |
| 100 | $62.34 | $6,234.00 |
| 500 | $54.54 | $27,270.00 |
| 1,000 | $46.75 | $46,750.00 |
MT41K512M16HA-125:A Overview
DDR3L SDRAM is the low-voltage version of DDR3 (1.5 V) SDRAM and is a cornerstone of modern volatile memory hierarchies. Within the memory hierarchy, SDRAM sits below CPU caches as main-system or working memory: a DRAM core organized into banks stores each bit as charge in a capacitor cell, refreshed periodically, and a synchronous interface (clocked by CK/CK#) pipelines commands to achieve high bandwidth. DDR3L parts like this one can also run in DDR3 (1.5 V) compatible mode per the manufacturer datasheet.
Key features include 8 internal banks, an 8n-bit prefetch architecture, differential bidirectional data strobes (DQS/DQS#), differential clock inputs (CK/CK#), and programmable nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals. The x16 organization simplifies 16-bit and 32-bit memory bus designs for embedded processors. The commercial operating range is 0C to +95C (Mouser lists the extended variant to 95C; the Alliance listing specifies 0C to 90C).
Architecturally, the 8-bank array with 8n prefetch and double-data-rate strobing delivers DDR-1600 bandwidth per pin while the ODT and programmable CAS latency settings let controllers tune signal integrity on fly-by or tee-topology DDR3 buses. The 96-ball FBGA (PBGA-96) surface-mount package minimizes loop inductance for clean high-speed signaling.
Typical applications include embedded main memory for industrial and networking processors, set-top boxes, automotive infotainment head units (using AIT grade variants), and memory expansion modules on single-board computers.
Design consideration: DDR3L requires proper VTT/VDDQ termination and length-matched routing per JEDEC-style DDR3 layout practice; always verify controller compatibility (ODT settings, CAS latency) before board spin.
This page synthesizes distributor pricing, drop-in alternatives from Micron, Alliance Memory, and ISSI, and practical DDR3L design notes not found in the manufacturer datasheet. Pricing as of 2026-09-10.
Drop-in alternatives for MT41K512M16HA-125:A β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT41K512M16HA-125 IT:A
β Drop-Inπ Reference alternative (not in catalog)
MT41K512M16HA-125 AIT:A
β Drop-Inπ Reference alternative (not in catalog)
MT41K512M16HA-125:A
β Drop-Inβ In Stock
$46.75 / Unit
View Datasheet βIS43TR16512BL-125KBL
β Drop-Inπ Reference alternative (not in catalog)
AS4C512M16D3L-12BCN
β Drop-Inπ Reference alternative (not in catalog)
MT41K512M16HA-125:A Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Memory Size | 8 Gbit |
| Organization | 512M x 16 |
| Interface | Parallel |
| Clock Frequency | 800 MHz (DDR3-1600 data rate) |
| Access Time | 13.75 ns |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) |
| Number of Internal Banks | 8 |
| Prefetch Architecture | 8n-bit |
| On-Die Termination (ODT) | Programmable nominal and dynamic |
| Data Strobe | Differential bidirectional (DQS/DQS#) |
| Clock Inputs | Differential (CK, CK#) |
| Operating Temperature | 0C to +95C |
| Package | 96-FBGA (9 x 14 mm) |
| Mounting Type | Surface Mount |
| Voltage Compatibility Mode | DDR3 (1.5 V) compatible mode supported |
| ECCN | EAR99 |
MT41K512M16HA-125:A 96-fbga (9 x 14 mm) Pin Configuration Guide
Pin configuration for MT41K512M16HA-125:A (96-fbga (9 x 14 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT41K512M16HA-125:A.
Refer to the datasheet for full pin configuration.
Typical Applications
MT41K512M16HA-125:A is suitable for 6 applications: Embedded Industrial Main Memory, Networking and Communications Equipment, Automotive Infotainment and Displays, Set-Top Boxes and Smart TVs, Single-Board Computers and Modules, Test and Measurement Instrumentation.
Embedded Industrial Main Memory
The MT41K512M16HA-125:A provides 8 Gbit of DDR3L main memory for industrial processors and SoCs such as ARM-based controllers and FPGAs with hard DDR3 controllers. Its 1.35 V operation cuts memory subsystem power roughly 20% compared to 1.5 V DDR3, reducing thermal load in sealed industrial enclosures, while the x16 organization allows single-chip 16-bit or dual-chip 32-bit buses without byte-lane pairing complexity. The 800 MHz clock (DDR3-1600) delivers up to 3.2 GB/s per 16-bit device, enough for real-time control, data logging, and HMI frame buffers. Programmable ODT helps maintain signal integrity on multi-drop layouts. For factory-floor environments below 0C, substitute the pin-identical IT:A industrial grade variant.
Recommended
Networking and Communications Equipment
Routers, switches, and NPUs use DDR3L SDRAM for packet buffers, routing tables, and control-plane memory. The MT41K512M16HA-125:A's 8-bank architecture with 8n prefetch sustains the random-access patterns typical of packet processing better than denser single-bank schemes, and its 3.2 GB/s per-device bandwidth at DDR3-1600 supports line-rate buffering in access-tier equipment. The differential DQS/DQS# strobing and dynamic ODT maintain timing margins across the 96-ball FBGA's controlled-impedance interconnect when four to eight devices share a fly-by address/command bus. EAR99 export classification (per the product record) simplifies deployment in international networking hardware programs.
Recommended
Automotive Infotainment and Displays
Automotive head units, digital clusters, and displays require gigabyte-class frame buffers and application memory qualified for harsh environments. Micron's MT41K512M16HA-125 AIT:A automotive variant shares the exact die, 512M x 16 organization, and 96-ball FBGA footprint as this commercial part, letting one PCB layout serve both development (commercial parts) and production (AIT parts). At 1.35 V the memory reduces power dissipation in fan-less dash assemblies, and the DDR3-1600 speed grade sustains the 2D/3D graphics and video decode bandwidth demanded by modern IVI SoCs. x16 organization maps directly onto the 32-bit or 64-bit memory buses typical of automotive SoCs using two or four devices.
Recommended
Set-Top Boxes and Smart TVs
Broadcast and streaming set-top boxes pair an SoC with 1 GB to 2 GB of DDR3L for channel buffering, middleware, and graphics. The MT41K512M16HA-125:A offers 8 Gbit (1 GB) per chip at DDR3-1600, meeting the bandwidth needed for 1080p60 decode with UI compositing. Its 1.35 V rail simplifies power supply design in cost-driven consumer platforms and reduces idle power for energy-regulation compliance. The 96-ball FBGA's 9 x 14 mm footprint fits densely on small main boards, and dual-voltage DDR3/DDR3L compatibility gives designers supply-chain flexibility when controller SoCs support either standard. Volume commercial temperature range (0C to +95C) matches indoor consumer environments.
Recommended
Single-Board Computers and Modules
SBC and SOM vendors embed DDR3L SDRAM directly on the module to provide standardized memory capacity for Linux/RTOS deployments. Two MT41K512M16HA-125:A devices give 2 GB on a 32-bit bus at up to 6.4 GB/s aggregate bandwidth, appropriate for embedded vision, edge AI inference, and gateway software stacks. The x16 data width matches the 16-bit/32-bit controllers of popular ARM and RISC-V SoCs, and soldered-down DRAM (versus SODIMM) improves shock/vibration tolerance and reduces BOM cost. On-die termination relieves the controller of complex termination schemes across the module's controlled-impedance routing. Refer to the SoC vendor's memory compatibility list to confirm -125 bin CAS latency support.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and data-acquisition instruments need deep capture memory with sustained streaming bandwidth. The MT41K512M16HA-125:A supplies 8 Gbit per device at DDR3-1600; stacking multiple x16 devices behind acquisition ASICs or FPGAs provides hundreds of megabytes of sample storage. Its 8-bank structure enables interleaved read/write streams, and programmable ODT plus differential strobes preserve timing margins in instruments with dense, high-agility memory buses. The dual DDR3/DDR3L mode allows reuse of proven 1.5 V DDR3 controller IP while capturing DDR3L power savings in portable instruments. Commercial 0C to +95C operation covers typical benchtop environments; use IT:A grade for chamber-tested hardware.
Recommended
Recommended Products Summary
Engineering reference data for MT41K512M16HA-125:A β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT41K512M16HA-125 IT:A | MT41K512M16HA-125 AIT:A | MT41K512M16HA-125:A (Alliance) | IS43TR16512BL-125KBL | AS4C512M16D3L-12BCN |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | 96-FBGA (9x14) - same | 96-FBGA (9x14) - same | 96-FBGA (9x14) - same | 96-FBGA - same footprint | 96-FBGA - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | ISSI | Alliance Memory |
| Memory Size / Organization | 8 Gbit, 512M x 16 | 8 Gbit, 512M x 16 | 8 Gbit, 512M x 16 | 8 Gbit, 512M x 16 | 8 Gbit, 512M x 16 | 8 Gbit, 512M x 16 |
| Speed Grade | -125 (DDR3-1600, 800 MHz, 13.75 ns) | -125 (DDR3-1600) | -125 (DDR3-1600) | -125 (DDR3-1600) | -125 (DDR3-1600) | -12 (DDR3-1600) |
| Supply Voltage | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) |
| Grade / Qualification | Commercial | Industrial | Automotive | Commercial (second source) | Commercial/Industrial | Commercial |
Key Differentiators
- Broadest controller and reference-design support (vs IS43TR16512BL-125KBL)
- Identical-die second source available (vs MT41K512M16HA-125:A (Alliance Memory))
- Temperature/grade scaling on the same footprint (vs MT41K512M16HA-125 IT:A / AIT:A)
Design Notes
Route the DDR3L address/command bus in a fly-by topology when two or more MT41K512M16HA-125:A devices share the bus, per the controller vendor's memory design guide. Keep DQ/DQS trace-length mismatch within the controller's specified window (typically +/-25 mil intra-byte-lane), reference all high-speed traces to a solid ground plane, and series-terminate address/command lines near the controller. The 96-ball FBGA's short ball leads help, but via transitions must be minimized - each via adds inductance that erodes DDR3-1600 timing margin.
Provide a 1.35 V VDD/VDDQ rail regulated within 1.283 V to 1.45 V, plus a VTT termination rail at VDDQ/2 (0.675 V) capable of sinking and sourcing current during bus turnaround - use a dedicated VTT LDO or termination regulator sized for peak termination current. Place bulk (100 uF) and local (0.1 uF per power ball) decoupling at each FBGA power ball. Estimated: at DDR3-1600 typical IDD currents, per-device power remains roughly 500-900 mV-rail dependent, but verify with the datasheet IDD tables for your actual utilization profile.
Do not assume ODT settings port unchanged from DDR3 (1.5 V) designs - program nominal and dynamic ODT per the DDR3L datasheet tables and re-verify read/write eye margins during bring-up. Confirm the memory controller supports the -125 speed bin (DDR3-1600, CL=11) before layout; if it tops out at DDR3-1333, consider the -107 bin parts instead. Finally, when second-sourcing to ISSI or Alliance equivalents, re-check ball map and mode-register defaults against the substitute datasheet, not the Micron document.
Compliance Information
Distributor records describe the part as lead-free (PBGA-96, 'lead free' per ADatasheet listing). REACH and conflict-minerals status not stated in provided data. For automotive qualification, use the AIT:A variant.
