MT53E128M32D2FW-046 - 4Gb LPDDR4 SDRAM 2133MT/s | Micron Technology
MPN: MT53E128M32D2FW-046 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.63 | $6.63 |
| 10 | $6.1 | $61.00 |
| 100 | $5.62 | $562.00 |
| 500 | $5.16 | $2,580.00 |
| 1,000 | $4.71 | $4,710.00 |
Drop-in alternatives for MT53E128M32D2FW-046 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT53E128M32D2FW-046 IT:A
β Drop-Inπ Reference alternative (not in catalog)
MT53E128M32D2FW-046 WT:A
β Drop-Inπ Reference alternative (not in catalog)
MT53E128M32D2FW-046 AAT:A
β Drop-Inπ Reference alternative (not in catalog)
MT53E128M32D2DS-053 AIT:A
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
MT53E128M32D2FW-046 Maximum Ratings & Electrical Characteristics
| DRAM Type | Mobile LPDDR4 SDRAM |
| Memory Density | 4 Gbit |
| Memory Organization | 128M x 32 |
| Interface | Parallel |
| Data Rate / Clock Frequency | 2133 MT/s (2.133 GHz) |
| Access Time | 3.5 ns |
| Supply Voltage | 1.1 V core / 1.8 V I/O |
| Package | 200-TFBGA (10 mm x 14.5 mm) |
| Pin Count | 200 |
| Die Configuration | DDP (Double Die Package) |
| Mounting Type | Surface Mount |
| Operating Temperature (IT grade) | -40C to +85C |
| Operating Temperature (AAT grade) | -40C to +105C (AEC-Q100 automotive) |
| Speed Grade | -046 |
| Automotive Qualification (AAT grade) | AEC-Q100 qualified |
MT53E128M32D2FW-046 200-tfbga (10 mm x 14.5 mm) Pin Configuration Guide
Complete pinout information for MT53E128M32D2FW-046 (200-tfbga (10 mm x 14.5 mm) package) with 200 pins. This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT53E128M32D2FW-046.
Refer to the datasheet for full pin configuration.
Estimated pin count: 200 pins (digital package)
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT53E128M32D2FW-046 is suitable for 6 applications: Smartphone and Tablet Main Memory, Automotive Infotainment and Instrument Clusters, Industrial Edge-AI and Vision Modules, Networking and Communication Equipment, Human-Machine Interfaces and Smart Displays, Battery-Powered IoT Gateways.
Smartphone and Tablet Main Memory
The MT53E128M32D2FW-046 fits smartphone and tablet main-memory designs where a single 32-bit LPDDR4 channel delivers 4 Gbit at up to 2133 MT/s (about 8.5 GB/s peak) in a compact 10 x 14.5 mm TFBGA footprint. Its 1.1V core rail and LPDDR4 self-refresh and power-down states minimize standby drain, directly extending battery life in always-on mobile devices. Typical integration pairs the memory with an application processor's integrated LPDDR4 controller, using fly-by CA routing and on-die termination training. Designers should budget board space for the 200-ball pattern and length-match DQ/CA traces within the JEDEC LPDDR4 skew budget to reach the -046 speed grade reliably.
Recommended
Automotive Infotainment and Instrument Clusters
The automotive AAT:A grade (MT53E128M32D2FW-046 AAT:A) is AEC-Q100 qualified and rated -40C to +105C, matching the ambient requirements of digital instrument clusters, head units, and telematics control units. The 4 Gbit / 128M x 32 configuration provides the working-set capacity for GPU frame buffers and navigation databases, while 2133 MT/s bandwidth keeps map rendering and video pipelines responsive. Integration is identical to the industrial grade, so a validated cluster PCB can reuse the same footprint across build tiers. Designers must follow the OEM's LPDDR4 signal-integrity guidelines, including controlled-impedance routing and VDDQ rail decoupling, and should confirm the memory controller's training tables cover the -046 speed grade over the full automotive temperature window.
Recommended
Industrial Edge-AI and Vision Modules
Industrial edge-AI accelerators and smart-camera modules use the IT:A industrial grade (-40C to +85C) of the MT53E128M32D2FW-046 as DRAM working memory for CNN inference buffers and multi-stream video capture. The 8.5 GB/s peak bandwidth at 2133 MT/s sustains high-resolution sensor readout, while the 4 Gbit density holds quantized model weights plus frame buffers within a single package. The 1.1V core operation keeps power within the thermal envelope of fanless enclosures. Best practice places the DRAM within a few centimeters of the SoC with length-matched fly-by routing; the DDP die stacking inside the package also means power delivery must handle transient bursts typical of convolution workloads.
Recommended
Networking and Communication Equipment
Line cards, small-cell baseband units, and enterprise Wi-Fi access points use the MT53E128M32D2FW-046 to buffer packet descriptors, session state, and DMA descriptors on a power-efficient LPDDR4 rail. The 32-bit interface at 2133 MT/s supplies roughly 8.5 GB/s of peak bandwidth, sufficient for multi-gigabit throughput aggregation, while 3.5 ns access latency keeps queue-processing loops responsive. In fanless networking hardware, the low 1.1V core power reduces chassis thermal load compared with DDR4 alternatives. Layout should reserve space for the 200-ball TFBGA and follow controller vendor reference designs for CA/DQ timing; the IT grade covers the extended ambient temperatures typical of outdoor and telecom cabinets.
Recommended
Human-Machine Interfaces and Smart Displays
Industrial HMIs, smart thermostats, and connected-panel displays rely on the MT53E128M32D2FW-046 as display frame-buffer memory for graphics stacks running on LPDDR4-capable SoCs. A 4 Gbit buffer at 2133 MT/s supports high-resolution panels with double buffering for tear-free rendering, while self-refresh mode keeps the framebuffer alive at milliwatt-level power during standby screensavers, important for always-on wall panels. The 10 x 14.5 mm TFBGA fits dense display-driver boards behind the panel. Designers should size the 1.1V rail for display-refresh peak current and enable LPDDR4 partial-array self-refresh if the controller supports it to cut standby consumption further in battery-backed portable HMI products.
Recommended
Battery-Powered IoT Gateways
Cellular and LoRaWAN IoT gateways use the MT53E128M32D2FW-046 (WT or IT grade) as main memory for protocol stacks, TLS session state, and local data logging between uplink windows. The LPDDR4 power model - 1.1V core, deep power-down, and self-refresh - allows the gateway to drop into microamp-scale sleep between radio events and resume quickly because the memory retains context, avoiding costly re-association. Peak 2133 MT/s bandwidth is rarely stressed by these workloads, but headroom prevents buffer overruns during burst packet aggregation. A typical design pairs the DRAM with an LTE/NB-IoT modem and SPI NOR for firmware; decouple VDD/VDDQ locally and gate the 1.8V I/O rail in sleep modes for lowest quiescent drain.
Recommended
Recommended Products Summary
Engineering reference data for MT53E128M32D2FW-046 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT53E128M32D2FW-046 IT:A | MT53E128M32D2FW-046 WT:A | MT53E128M32D2FW-046 AAT:A | MT53E128M32D2DS-053 AIT:A |
|---|---|---|---|---|---|
| Package | 200-TFBGA (10x14.5) | 200-TFBGA (10x14.5) - same | 200-TFBGA (10x14.5) - same | 200-TFBGA (10x14.5) - same | 200-WFBGA - same pin count |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density / Organization | 4 Gbit, 128M x 32 | 4 Gbit, 128M x 32 | 4 Gbit, 128M x 32 | 4 Gbit, 128M x 32 | 4 Gbit, 128M x 32 |
| Data Rate / Clock | 2133 MT/s (3.5 ns) | 2133 MT/s | 2133 MT/s | 2133 MT/s | 1866 MHz |
| Supply Voltage | 1.1 V / 1.8 V | 1.1 V / 1.8 V | 1.1 V / 1.8 V | 1.1 V / 1.8 V | 1.1 V / 1.8 V |
| Operating Temperature | -40C to +85C (IT grade) | -40C to +85C | Commercial grade (narrower range) | -40C to +105C | Industrial grade |
| Automotive Qualification | No (IT grade) | No | No | Yes (AEC-Q100) | Industrial (AI = automotive temp, non-Q100) |
| Indicative Price (qty 1) | $6.63 (as of 2026-09-04) | $6.63 (LCSC, as of 2026-09-04) | [DATA_NEEDED] | $4.46 (LCSC, as of 2026-09-04) | [DATA_NEEDED] |
Key Differentiators
- Highest speed grade in the 4 Gbit 128M x 32 LPDDR4 family (vs MT53E128M32D2DS-053 AIT:A)
- Automotive AEC-Q100 option on identical silicon (vs MT53E128M32D2FW-046 IT:A)
- Compact DDP-stacked 4 Gbit footprint (vs Single-die LPDDR4 alternatives requiring two packages)
Design Notes
LPDDR4 at 2133 MT/s leaves little timing margin, so follow the JEDEC LPDDR4 fly-by routing topology: keep the CA bus length-matched within the controller vendor's skew spec, match each DQ byte lane internally, and reference all signals to a solid VSS plane. Place the MT53E128M32D2FW-046 within a few centimeters of the SoC, avoid via transitions in the DQ nets, and simulate the channel at the -046 speed grade if trace lengths exceed the reference design limits.
The device uses two rails: 1.1V core (VDD) and 1.8V I/O (VDDQ per datasheet). Size the 1.1V regulator for peak active current during full-bandwidth bursts (worst case near full 8.5 GB/s traffic), not just average load, since DDP (double die package) parts draw correlated transient current from both dies. Decouple VDD and VDDQ with a local bulk capacitor plus multiple 0.1 uF ceramics directly at the ball field; verify rail droop against the datasheet AC operating conditions.
Match the temperature suffix to the end market: WT (commercial), IT (-40C to +85C), AAT (-40C to +105C, AEC-Q100). Using a commercial WT grade in an industrial enclosure is a common failure cause. Also avoid the obsolete MT53E128M32D2FW-046-AUT-A legacy variant listed in Micron's obsolete catalog for new designs, and confirm the memory controller's training firmware supports the -046 speed grade before committing the layout.
The 200-ball TFBGA (0.5 mm-class pitch, 10 x 14.5 mm) requires a carefully specified BGA fanout; use non-solder-mask-defined pads per the Micron package appendix and plan VSS ball stitching to the ground plane with short, wide vias. Reserve keep-out area for on-die-termination training calibration routing. Estimated: a typical LPDDR4 DQ lane group at 2133 MT/s needs intra-byte skew control to roughly the tens-of-mils level on standard FR-4 - validate with your fab stackup values.
Compliance Information
The AAT:A grade variant is described by Datasheets.com as automotive AEC-Q100 qualified; AEC-Q100 applies to that grade only, not this base IT/WT listing. RoHS/REACH/lead-free status must be confirmed from the Micron official product page.
