2EP100RXTMA1 - 5W 20V Full-Bridge Transformer Driver | Infineon
MPN: 2EP100RXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.14 | $1.14 |
| 10 | $1.02 | $10.20 |
| 100 | $0.91 | $91.00 |
| 500 | $0.79 | $395.00 |
| 1,000 | $0.68 | $680.00 |
| 3,000 | $0.55 | $1,650.00 |
2EP100RXTMA1 Overview
A transformer driver IC is a specialized power management semiconductor that switches an external transformer at high frequency to generate isolated DC rails. Transformer drivers sit in the power management IC hierarchy (transformer driver -> isolated bias supply -> gate driver supply -> power management IC -> semiconductor) and are commonly used in conjunction with galvanic isolation components such as digital isolators and gate driver optocouplers.
Key features of the 2EP100RXTMA1 include a wide supply range supporting typical 5 V to 20 V inputs, integrated full-bridge switches that drive the external transformer primary, programmable switching frequency set by an external resistor or synchronization input, and built-in soft-start to limit inrush current at power-up. The device provides configurable dead time to prevent shoot-through, and offers enable/shutdown control for low quiescent current standby. The PG-TSSOP-8 package reduces board space compared with discrete driver implementations and supports reflow soldering.
Architecturally, the 2EP100RXTMA1 uses four internal MOSFET switches arranged as an H-bridge, switching the transformer primary at programmable frequency. The on-chip oscillator and dead-time control generate complementary gate timing, while the integrated bootstrap-style high-side drive is implemented using external capacitors at each high-side terminal. Built-in protection includes undervoltage lockout (UVLO), thermal shutdown, and short-circuit current limiting on the primary winding.
Typical applications include isolated gate driver supplies for industrial motor drives, isolated bias for traction inverters in xEV, telecom DC-DC converters using a push-pull topology, solar inverters, and server/telecom isolated bus converters. The 5 W output capability is well-matched to driving four to eight gate drivers simultaneously.
Designers should note that the 2EP100RXTMA1 drives only the primary; the transformer secondary rectification, filtering, and post-regulation must be implemented externally. Proper PCB layout of the primary loop and careful selection of the bootstrap capacitor are essential for reliable high-side switching. Synchronizing to an external clock helps avoid beat-frequency noise in multi-rail systems.
This page consolidates distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet to accelerate your design-in of the 2EP100RXTMA1.
Drop-in alternatives for 2EP100RXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EP100RXTMA1 (same form factor and footprint) — differing in Package, Number of Outputs, Topology, Driver Type, Operating Temperature.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2EP101RXTMA1
✅ Drop-In✓ In Stock
$0.88 / Unit
View Datasheet →2EP110RXTMA1
✅ Drop-In✓ In Stock
$1.92 / Unit
View Datasheet →2EP130RXTMA1
✅ Drop-In✓ In Stock
$1.2 / Unit
View Datasheet →2EDL8034G4CXTMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.55 / Unit
View Datasheet →2EDL5023U2DXTMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.4 / Unit
View Datasheet →2EDL6014ACG2DXTMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.18 / Unit
View Datasheet →2EDN7434RXTMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.34 / Unit
View Datasheet →2EP100RXTMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Full-Bridge Transformer Driver PMIC |
| Topology | Full-bridge (H-bridge) with external transformer |
| Output Power (max) | 5 W |
| Supply Voltage (max) | 20 V |
| Switching Frequency | Programmable via external resistor |
| Dead Time | Configurable |
| Output Configuration | Drives external center-tapped transformer |
| Soft Start | Built-in |
| Enable / Shutdown | Yes |
| Undervoltage Lockout (UVLO) | Built-in |
| Thermal Shutdown | Built-in |
| Short-Circuit Protection | Built-in (primary-side current limit) |
| Package | PG-TSSOP-8 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Target Applications | Isolated gate driver supplies, isolated DC-DC converters |
2EP100RXTMA1 Pin Configuration
| Pin 1 | VCC — Supply voltage input (typ. 5-20 V) |
| Pin 2 | GND — Ground reference |
| Pin 3 | OUT_A — H-bridge output node A (to transformer primary) |
| Pin 4 | OUT_B — H-bridge output node B (to transformer primary center tap) |
| Pin 5 | OUT_C — H-bridge output node C (to transformer primary) |
| Pin 6 | RT — Oscillator programming resistor |
| Pin 7 | EN/SYNC — Enable input / synchronization I/O |
| Pin 8 | BST — Bootstrap supply for high-side drivers |
Typical Applications
2EP100RXTMA1 is suitable for 7 applications: Isolated IGBT Gate Driver Supply, SiC and GaN Gate Driver Bias, Telecom Isolated DC-DC Converter, Solar Inverter Isolated Bias, xEV Traction Inverter Gate Driver Bias, Server and Datacenter Isolated Bus Converter, Industrial Motor Drive Isolated Bias.
Isolated IGBT Gate Driver Supply
The 2EP100RXTMA1's 5 W output rating and integrated full-bridge topology make it an excellent fit for isolated IGBT gate driver supply generation in industrial motor drives and UPS systems. Driving the primary of a small center-tapped transformer at programmable frequency produces +15 V and -8 V bipolar rails needed by IGBT gate drivers, which typically draw 50-200 mW per channel at 10-20 kHz switching. The H-bridge topology enables bipolar outputs without complex synchronous rectification on the secondary. Designers should choose transformer turns ratio to deliver the correct VCC and VEE rails after diode rectification; a 1:1:1 turns ratio with low-Vf Schottky diodes is typical.
Recommended
SiC and GaN Gate Driver Bias
SiC and GaN power switches often require asymmetric or bipolar gate drive rails (+18 V / -3 V for SiC, +6 V / -3 V for GaN) that the 2EP100RXTMA1 can synthesize through its full-bridge switching of a center-tapped transformer. The device's programmable switching frequency up to 1 MHz allows the use of very small planar transformers, which is critical for compact SiC/GaN power modules where PCB real estate is limited. The 5 W capacity supports 4-6 gate driver channels at typical 50-100 mW each, suiting mid-power SiC inverter designs in xEV traction and industrial servo drives.
Recommended
Telecom Isolated DC-DC Converter
In telecom 48 V brick converters that require galvanic isolation between primary and secondary, the 2EP100RXTMA1 drives the primary of the bias transformer that powers secondary-side gate drivers and control circuitry. The 5 W rating covers typical 5-10 W converter bias needs including housekeeping supply, gate drive, and PWM controller power. The H-bridge output swing maximizes transformer utilization compared with push-pull, reducing required primary inductance by 2x. Synchronization to the converter's main switching clock eliminates beat-frequency noise.
Recommended
Solar Inverter Isolated Bias
Solar string inverters and micro-inverters require multiple isolated gate driver rails for the high-voltage H-bridge and boost PFC stages. The 2EP100RXTMA1's 5 W capacity and PG-TSSOP-8 footprint allow multiple bias transformers to be powered independently across the inverter, each supplying a different isolated domain. The integrated UVLO and thermal shutdown reduce external component count, which is critical for cost-sensitive residential solar installations. The device supports the 8-15 V input range typical of solar inverter auxiliary rails.
Recommended
xEV Traction Inverter Gate Driver Bias
Traction inverters in electric vehicles require isolated gate driver supplies for the high-voltage IGBT or SiC power module. The 2EP100RXTMA1's 20 V supply rating aligns with the 12 V automotive auxiliary bus, and its 5 W output supports the gate drive power budget for a typical 3-phase inverter module. The integrated protection features (UVLO, thermal shutdown) help meet automotive reliability requirements. While the part itself is not AEC-Q100 qualified, its family members and gate driver companions listed below meet automotive-grade requirements.
Recommended
Server and Datacenter Isolated Bus Converter
In 48 V server and datacenter power architectures, the 2EP100RXTMA1 drives the bias transformer for isolated point-of-load converters that step down 48 V to 1-12 V CPU/GPU rails. The 5 W rating covers the auxiliary supply requirement for digital isolators, secondary-side PWM controllers, and gate drive. Multiple instances of the 2EP100RXTMA1 can be synchronized to a common clock to prevent beat-frequency noise that could couple into sensitive analog rails. The PG-TSSOP-8 footprint supports the high-density PCB layouts required in modern server VRMs.
Recommended
Industrial Motor Drive Isolated Bias
Industrial motor drives (AC drives, servo amplifiers) require isolated gate driver supplies for the high-voltage 3-phase inverter stage. The 2EP100RXTMA1's full-bridge topology and 5 W rating match the bias requirements of typical 5-15 kW drives using IGBT modules. Its integrated soft-start limits inrush current at power-up, protecting the upstream 24 V industrial supply rail. Multiple 2EP100RXTMA1 devices can power independent bias domains for the rectifier, inverter, and brake-chopper stages, providing functional isolation that reduces ground-loop noise.
Recommended
Recommended Products Summary
Engineering reference data for 2EP100RXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EP101RXTMA1 | 2EP110RXTMA1 | 2EP130RXTMA1 | 2EDL8034G4CXTMA1 | 2EDL5023U2DXTMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSSOP-8 | PG-TSSOP-8 (same) | PG-TSSOP-8 (same) | PG-TSSOP-8 (same) | TSSOP-8 family (similar) | TSSOP-8 family (similar) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Topology | Full-bridge (H-bridge) | Full-bridge (H-bridge) | Full-bridge (H-bridge) | Full-bridge (H-bridge) | Half-bridge gate driver | Half-bridge gate driver |
| Output Power (max) | 5 W | Higher than 5 W | Higher than 5 W | Highest in 2EP1xxR family | Gate driver (not directly rated for transformer power) | Gate driver (not directly rated for transformer power) |
| Supply Voltage (max) | 20 V | 20 V family | 20 V family | 20 V family | 20 V (gate driver family) | 20 V (gate driver family) |
| Switching Frequency | Programmable (typ. 100 kHz - 1 MHz) | Programmable | Programmable | Programmable | Driver IC (gate timing set externally) | Driver IC (gate timing set externally) |
| Soft Start | Built-in | Built-in | Built-in | Built-in | N/A (gate driver) | N/A (gate driver) |
| Undervoltage Lockout | Built-in | Built-in | Built-in | Built-in | Built-in | Built-in |
Key Differentiators
- Integrated full H-bridge topology in 8-pin TSSOP (vs 2EDL8034G4CXTMA1)
- Family scalability with PG-TSSOP-8 pin compatibility (vs 2EP101RXTMA1)
- Programmable switching frequency (vs Fixed-frequency SN6501 (TI))
Design Notes
Place the 2EP100RXTMA1 close to the transformer primary pins to minimize the high-current switching loop area. The H-bridge output traces (pins 3, 4, 5) carry pulsed currents at the programmed switching frequency, so keep these traces short and wide, with the input bypass capacitor (1-10 uF ceramic + 100 nF decoupling) placed within 5 mm of the VCC pin. The exposed pad on PG-TSSOP-8 should be soldered to a copper pour of at least 25 mm^2 for thermal dissipation; in designs where the part dissipates more than 500 mW, increase this to 50-100 mm^2.
Estimated: at maximum 5 W output into the transformer with VCC = 12 V and 85% efficiency, the 2EP100RXTMA1 dissipates approximately 0.6 W internally. The PG-TSSOP-8 package has a typical theta_JA of 150-180 C/W on a standard JEDEC 4-layer test board, resulting in a 90-110 C junction temperature rise above ambient. For applications at 70 C ambient, this leaves only 30 C margin to the 125 C maximum. Designers should either reduce switching frequency, limit output power, or increase PCB copper area on the exposed pad.
Do not exceed the 20 V absolute maximum on VCC. Do not operate without the bootstrap capacitor on the BST pin (pin 8) - this will cause high-side switch gate drive to fail. Do not omit the RT resistor - it programs the oscillator frequency and the part will not switch without it. Ensure the transformer primary has a center tap; a non-center-tapped transformer will not produce symmetric bipolar outputs. Finally, verify that secondary rectifier diodes have sufficient reverse-voltage rating - peak inverse voltage can approach 2x the secondary rail.
When multiple 2EP100RXTMA1 devices are used on the same PCB (for example, to power independent bias domains in a multi-rail inverter), synchronize them to a common clock via the EN/SYNC pin. Otherwise, beat frequencies between unsynchronized oscillators can appear as low-frequency noise on isolated rails, degrading ADC measurements or coupling into sensitive analog circuits. Add 100 nF ceramic decoupling on each VCC pin, and consider ferrite beads on the supply rail for additional isolation from system noise.
Compliance Information
RoHS and lead-free per Infineon product page. Not AEC-Q100 qualified - use AEC-Q100 graded companions for automotive designs. Halogen-free status not explicitly stated in available data - marked unknown.
