CSD22206W - -8V P-Ch 5A WLP MOSFET | Texas Instruments
MPN: CSD22206W β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.47 | $4.70 |
| 100 | $0.31 | $31.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
Drop-in alternatives for CSD22206W β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
CSD22203W
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
CSD23201W
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
CSD25203W3
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
CSD22206WT
β Drop-Inπ Reference alternative (not in catalog)
CSD22206W Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -8 V |
| Continuous Drain Current (ID) | -5 A (Ta) |
| Power Dissipation (PD) | 1.7 W (Ta) |
| RDS(on) Max | 5.7 mOhm |
| RDS(on) Typ | 4.7 mOhm (at higher VGS) |
| Package | 9-DSBGA (WLP) 1.5 mm x 1.5 mm |
| Mounting Type | Surface Mount |
| Gate ESD Protection | Yes (integrated) |
| Technology | NexFET Power MOSFET |
| Configuration | Single FET |
| Mounting Style | Wafer-Level Chip-Scale Package |
| RoHS Status | Compliant |
| Applications | Battery-operated space constrained applications |
CSD22206W Pin Configuration
| Pin A1 | D β Drain connection |
| Pin A2 | D β Drain connection |
| Pin A3 | D β Drain connection |
| Pin B1 | S β Source connection |
| Pin B2 | G β Gate connection (with integrated ESD protection) |
| Pin B3 | S β Source connection |
| Pin C1 | D β Drain connection |
| Pin C2 | D β Drain connection |
| Pin C3 | D β Drain connection |
Safe Operating Area
Typical Applications
CSD22206W is suitable for 6 applications: Portable Battery-Powered Electronics, High-Side Load Switches, Smartphone and Wearable Power Path Management, DC-DC Converter Stages, Reverse-Polarity and Battery Protection, Industrial Compact Sensor Nodes.
Portable Battery-Powered Electronics
The CSD22206W fits single-cell Li-ion powered devices where board area is at a premium: its 1.5 mm x 1.5 mm WLP footprint and ultra-low profile allow placement in stacked-board layouts. The -8V rating covers battery plus charger transients, while 5.7 mOhm RDS(on) limits voltage drop and I2R losses at multi-amp loads. Integrated gate ESD protection improves yield in high-volume assembly. Typical use: main power-path switch between battery and PMIC.
Recommended
High-Side Load Switches
P-channel polarity enables simple high-side switching without a charge pump or bootstrap: pull the gate low to turn on. With 4.7-5.7 mOhm RDS(on), conduction drop at 5A is under 30 mV, preserving rail accuracy for downstream SoCs. The 1.7W (Ta) dissipation limit and WLP thermal path require a solid ground/copper plane under the die. Gate ESD protection adds robustness in production handling and in-circuit transients.
Recommended
Smartphone and Wearable Power Path Management
In smartphones and wearables, the CSD22206W serves as a battery disconnect or power-path FET where height is severely restricted - the DSBGA WLP profile is among the lowest available. The -8V rating provides margin above the 4.4V max cell voltage plus ring/transients. Low gate charge reduces switching losses during frequent power-path transitions in power-management IC sequencing, extending effective battery life in always-on wearable use cases.
Recommended
DC-DC Converter Stages
The CSD22206W can serve as the synchronous rectification or load-disconnect element in small non-isolated DC-DC stages for portable systems. Its low RDS(on) minimizes conduction loss while low gate charge suits the moderate switching frequencies typical of portable converters. Pair with an appropriate controller: note that P-channel high-side drive simplifies the gate-driver requirement versus N-channel, removing bootstrap components in compact buck designs.
Recommended
Reverse-Polarity and Battery Protection
In battery-operated systems, the CSD22206W provides reverse-polarity or over-discharge protection on the negative or switched rail. The -8V rating tolerates reversed-battery conditions on low-voltage cells, and the 5A capacity suits main-path protection. The WLP die's solder balls double as thermal vias to spread heat into the PCB. Integrated gate ESD protection withstands handling and field-servicing events common in consumer battery products.
Recommended
Industrial Compact Sensor Nodes
Battery-powered IoT and industrial sensor nodes use the CSD22206W as a rail switch to fully disconnect loads during sleep, cutting leakage to near zero. The tiny 1.5 mm x 1.5 mm WLP footprint fits dense node PCBs, and low gate charge minimizes energy lost in infrequent switching events. With 5A capability, the same FET also covers peak transmit currents of wireless modules without measurable voltage sag.
Recommended
Recommended Products Summary
Engineering reference data for CSD22206W β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | CSD22203W | CSD23201W | CSD22206WT |
|---|---|---|---|---|
| Package | 9-DSBGA (WLP) 1.5x1.5 mm | 9-DSBGA (WLP) 1.5x1.5 mm - same | 9-DSBGA (WLP) 1.5x1.5 mm - same | 9-DSBGA (WLP) 1.5x1.5 mm - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Drain-Source Voltage | -8 V | -12 V | -20 V | -8 V |
| RDS(on) | 5.7 mOhm (4.7 typ) | [DATA_NEEDED] | [DATA_NEEDED] | 5.7 mOhm (identical die) |
| Continuous Current | -5 A (Ta) | [DATA_NEEDED] | [DATA_NEEDED] | -5 A (Ta) |
| Gate ESD Protection | Yes | Yes | Yes | Yes |
| Power Dissipation | 1.7 W (Ta) | [DATA_NEEDED] | [DATA_NEEDED] | 1.7 W (Ta) |
| Packing Option | Tape & Reel | Tape & Reel | Tape & Reel | Alternate reel quantity (T suffix) |
Key Differentiators
- Smallest footprint in its class (vs CSD23201W)
- Higher voltage headroom drop-in (vs CSD22203W)
- Integrated gate ESD protection (vs generic WLP P-FETs)
Design Notes
The 1.7W (Ta) dissipation limit in a 1.5 mm x 1.5 mm WLP depends almost entirely on PCB copper. Connect the drain/source balls to generous pours on at least two layers with thermal vias. At 5A and 5.7 mOhm, conduction loss is only ~0.14W, but switching and reduced-VGS operation increase it; verify junction temperature using the datasheet thermal metrics for your board stack-up.
RDS(on) is strongly VGS dependent in this low-voltage NexFET. The 5.7 mOhm max figure assumes adequate gate drive; driving the gate at reduced levels raises channel resistance and conduction losses sharply. Verify the on-resistance vs VGS curves in the TI datasheet at your actual drive level before finalizing thermal and voltage-drop budgets.
Keep gate traces short and away from high dV/dt drain nodes to limit parasitic turn-on from gate-drain capacitance. Although the CSD22206W integrates gate ESD protection, respect the gate voltage rating during layout and add a pulldown resistor on the gate to define the off-state. WLP solder balls require no-flow underfill considerations depending on mechanical shock requirements.
Compliance Information
RoHS compliance per TI product page and DigiKey listing. REACH/halogen-free/conflict-minerals status not found in provided data.
