IR2304STRPBF - 600V Half-Bridge Gate Driver | Infineon
MPN: IR2304STRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.83 | $8.30 |
| 100 | $0.68 | $68.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.46 | $460.00 |
| 2,500 | $0.39 | $975.00 |
IR2304STRPBF Overview
A half-bridge gate driver is a type of gate driver IC specifically designed to control one high-side and one low-side switch in a half-bridge topology used in switch-mode power supplies, motor drives, and Class D amplifiers. As a member of the broader gate driver family (gate driver -> driver IC -> power management IC -> semiconductor), the IR2304 reduces switching losses by providing high peak current to quickly charge and discharge the gate capacitances of large power MOSFETs or IGBTs, which the microcontroller or controller IC cannot drive directly. The integrated deadtime and matched propagation delays further prevent cross-conduction in the half-bridge.
Key features include 600 V maximum offset voltage, 220 ns typical turn-on and turn-off propagation delay with matched delay between channels, and built-in deadtime to prevent shoot-through. The output stage uses a high pulse-current buffer designed for minimum driver cross-conduction. The 8-SOIC package supports surface-mount assembly and provides sufficient thermal performance for typical half-bridge applications in industrial and consumer environments.
The IR2304 uses a bootstrap-capacitor technique for the high-side supply, allowing the high-side driver to float above the bus voltage while the low-side driver is referenced to ground. This architecture eliminates the need for an isolated DC/DC converter or level shifter in many applications, reducing BOM cost and PCB area.
Typical applications include switch-mode power supplies (SMPS), DC-DC converters, motor control drives for HVAC and small appliances, Class D audio amplifiers, and general-purpose half-bridge and full-bridge (using two IR2304s) inverters for industrial automation. The non-inverting single-input control simplifies firmware design, as a single PWM signal controls both outputs with built-in deadtime.
When designing with this device, ensure the bootstrap diode is a fast-recovery or ultrafast type rated above 600 V, and that the bootstrap capacitor is sized to supply the high-side gate charge for the switching frequency used. Place a local 0.1 µF VCC bypass capacitor and a 1 µF to 10 µF bulk capacitor as close as possible to the VCC pin to handle the gate charge currents. Avoid exceeding the negative VS transient rating to prevent latch-up of the high-side driver.
This page combines distributor pricing, drop-in alternatives, and practical design notes not collected in the manufacturer datasheet.
Drop-in alternatives for IR2304STRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR2304STRPBF (same form factor and footprint) — differing in Configuration, Package, RoHS Status, Input Logic Compatibility, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IR2304SPBF
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →IR2104STRPBF
✅ Drop-In✓ In Stock
$0.59 / Unit
View Datasheet →IRS2003STRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IR2301STRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IR2101STRPBF
✅ Drop-In✓ In Stock
$0.22 / Unit
View Datasheet →IR2304STRPBF Maximum Ratings & Electrical Characteristics
| Function | Half-bridge gate driver |
| Configuration | High-side and low-side (half-bridge) |
| Number of Outputs | 2 |
| Logic Input | Non-inverting, single input |
| Supply Voltage (VCC) | 10 V to 20 V |
| Offset Voltage (Voffset) | Up to 600 V |
| Output Source Current (typ.) | 0.29 A |
| Output Sink Current (typ.) | 0.6 A |
| Propagation Delay (typ.) | 220 ns (turn-on and turn-off, matched) |
| Deadtime | Integrated (matched delay, prevents shoot-through) |
| Input Logic Compatibility | 3.3 V CMOS / LSTTL |
| dV/dt Immunity | Yes (high-side channel) |
| Negative VS Transient Tolerance | Yes |
| Operating Temperature | -40C to +125C |
| Package | 8-SOIC (3.90 mm body width) |
| Mounting Type | Surface Mount |
| RoHS Status | PbF suffix indicates lead-free / RoHS compliant |
| Packaging | Tape and Reel (TR) |
IR2304STRPBF Pin Configuration
| Pin 1 | VCC — Logic and low-side supply (10 V to 20 V) |
| Pin 2 | IN — Logic input, non-inverting, 3.3 V CMOS / LSTTL compatible |
| Pin 3 | NC — No connection (single-input variant) |
| Pin 4 | COM — Low-side return and logic ground |
| Pin 5 | LO — Low-side gate drive output (0.29 A source / 0.6 A sink) |
| Pin 6 | VS — High-side floating supply return / bootstrap capacitor negative terminal |
| Pin 7 | HO — High-side gate drive output (0.29 A source / 0.6 A sink) |
| Pin 8 | VB — High-side floating supply (bootstrap capacitor positive terminal) |
Typical Applications
IR2304STRPBF is suitable for 7 applications: Switch-Mode Power Supply (SMPS) Half-Bridge, DC-DC Converter Synchronous Rectification, BLDC / PMSM Motor Drive (Low-Voltage 3-Phase), Class D Audio Amplifier Output Stage, Electronic Ballast for HID / Fluorescent Lighting, Solar Inverter / String Inverter Half-Bridge, Induction Heating Cooktop Inverter.
Switch-Mode Power Supply (SMPS) Half-Bridge
The IR2304STRPBF is well suited to drive the primary-side half-bridge in isolated SMPS topologies such as half-bridge, push-pull, and full-bridge converters operating from 200 V to 400 V DC bus rails. The 600 V offset rating comfortably exceeds typical 380 V rectified mains, while the 0.29 A source / 0.6 A sink currents switch MOSFET gate charges quickly to minimize transition losses at 50 kHz to 250 kHz switching frequencies. The integrated shoot-through protection with matched 220 ns delays prevents simultaneous conduction of high-side and low-side switches, a critical fault that destroys half-bridges in microseconds. Place a UF4007 or ES1J fast-recovery bootstrap diode and a 0.47 µF to 1 µF ceramic bootstrap capacitor between VCC and VB to supply the floating high-side rail. Pair with a UC3842 or UCC28950 PWM controller for closed-loop regulation.
Recommended
DC-DC Converter Synchronous Rectification
In synchronous buck or boost DC-DC converters, the IR2304STRPBF drives the high-side and low-side N-channel MOSFETs with matched propagation delays that ensure tight timing and minimal deadtime. The non-inverting single-input interface accepts a 3.3 V or 5 V PWM signal directly from a microcontroller or dedicated controller IC, simplifying firmware. The 0.6 A sink current is particularly valuable for the low-side synchronous rectifier, where rapid turn-off prevents body-diode conduction and improves efficiency by 1% to 3% at heavy loads. The 600 V rating allows headroom for 48 V to 400 V telecom and industrial bus voltages, and the dV/dt immunity ensures stable operation despite the high dv/dt transitions of the switching node. Use 1 µF X7R ceramic bypass on VCC and a 100 nF X7R on the VB-VS bootstrap rail.
Recommended
BLDC / PMSM Motor Drive (Low-Voltage 3-Phase)
Three IR2304STRPBF ICs form a complete 3-phase half-bridge inverter for sensorless or sensored brushless DC and permanent-magnet synchronous motor drives operating from 24 V to 400 V bus rails. The 0.29 A source / 0.6 A sink capability comfortably switches 50 A to 200 A IGBT or MOSFET modules in e-bike, power tool, drone, and small HVAC compressor drives. The integrated deadtime and shoot-through protection simplify firmware by removing the need for software-controlled deadtime insertion in the PWM generator. Each driver only needs a single bootstrap capacitor and a UF4007-grade fast-recovery diode per half-bridge, keeping BOM cost low. The 3.3 V logic compatibility directly interfaces with STM32, PIC, and ESP32 motor-control timers. Add NTC thermistor feedback on the heatsink for thermal protection.
Recommended
Class D Audio Amplifier Output Stage
The IR2304STRPBF drives the complementary high-side and low-side MOSFETs of each output half-bridge in a Class D audio amplifier, supporting output power from 50 W to 500 W per channel in home theater and professional audio applications. The matched 220 ns propagation delays and built-in deadtime are critical for audio quality, as asymmetric or excessive deadtime causes shoot-through losses and increases total harmonic distortion (THD) by 0.1% to 0.5%. The 600 V rating provides ample headroom for 200 V to 400 V bus rails used in bridged-tied-load (BTL) configurations that drive 4 Ω to 8 Ω speakers directly. The non-inverting input accepts standard 3.3 V PWM from a TPA3251 or similar Class D controller modulator, simplifying the analog front-end. Place a 10 µF film + 100 nF ceramic bootstrap network per channel.
Recommended
Electronic Ballast for HID / Fluorescent Lighting
In electronic ballasts for high-intensity discharge (HID) lamps and high-frequency fluorescent tubes, the IR2304STRPBF drives the resonant half-bridge inverter that produces the 20 kHz to 100 kHz AC excitation current. The 600 V offset rating handles the rectified 220 V AC or 277 V AC mains without additional protection, and the dV/dt immunity ensures reliable switching despite the high dv/dt of the resonant transition. The matched channel delays and integrated deadtime simplify ballast design by removing software-controlled timing concerns, while the 0.6 A sink current discharges the MOSFET gates quickly enough to maintain zero-voltage switching (ZVS) at the resonant crossover. Pair with an IR2153 self-oscillating ballast controller for a complete HID ballast solution.
Recommended
Solar Inverter / String Inverter Half-Bridge
The IR2304STRPBF forms the switching half-bridge in micro-inverters and string inverters for residential and small-commercial photovoltaic systems with DC bus voltages from 200 V to 600 V. The 600 V rating handles open-circuit PV string voltages up to 600 V (Voc at -25 °C for typical 60-cell or 72-cell panels) without exceeding the absolute maximum rating. The integrated deadtime and matched delays improve inverter efficiency by 0.5% to 1.5% over discrete gate-drive solutions, which compounds across 25-year PV system lifetimes. The non-inverting 3.3 V logic input directly interfaces with TI C2000 or Microchip dsPIC33 PV-inverter controllers. Use bootstrap components rated for 85 °C continuous operation since inverters are typically installed outdoors in elevated ambient temperatures.
Recommended
Induction Heating Cooktop Inverter
Resonant half-bridge inverters for induction heating cooktops and rice cookers use the IR2304STRPBF to switch the LC resonant tank at 20 kHz to 100 kHz, delivering 1 kW to 3 kW of cooking power. The 600 V offset rating handles 230 V AC or 380 V DC rectified mains, and the 0.6 A sink current rapidly turns off the IGBTs to minimize switching losses in the resonant zero-crossing. The integrated shoot-through protection is critical in this application, where a cross-conduction event destroys the IGBTs and the cookware coil within microseconds. The non-inverting single-input control is compatible with the SG3525 or UCC25640 resonant controllers commonly used in induction heating designs.
Recommended
Recommended Products Summary
Engineering reference data for IR2304STRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2304SPBF | IR2104STRPBF | IRS2003STRPBF | IR2301STRPBF | IR2101STRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC | 8-SOIC (same) | 8-SOIC (same) | 8-SOIC (same) | 8-SOIC (same) | 8-SOIC (same) |
| Offset Voltage (max) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Source Current (typ.) | 0.29 A | 0.29 A | 0.13 A | 0.13 A | 0.13 A | 0.13 A |
| Sink Current (typ.) | 0.6 A | 0.6 A | 0.27 A | 0.27 A | 0.27 A | 0.27 A |
| Logic Inputs | Single, non-inverting | Single, non-inverting | Single, non-inverting | Independent HIN and LIN | Independent HIN and LIN | Independent HIN and LIN |
| Shoot-through Protection | Yes (matched delay + deadtime) | Yes | No | Yes | Yes | No |
| Approx. Unit Price (1 pc, as of 2026-09-15) | $0.92 | ~$0.92 | ~$0.60 | ~$0.65 | ~$0.70 | ~$0.45 |
Key Differentiators
- Higher peak gate current vs IR2104 family (vs IR2104STRPBF)
- Integrated shoot-through protection with matched delays (vs IR2104STRPBF)
- Simplified single-input control vs IRS2003 / IR2301 (vs IRS2003STRPBF)
- 600 V rating covers all standard mains applications (vs Lower-voltage gate drivers (e.g., 100 V rated parts))
Design Notes
Bootstrap capacitor sizing: Qbs_total = Qg + Qls + I_qbs * t_on, where Qg is total gate charge of the high-side MOSFET, Qls is the level-shift charge (~5 nC typical for IR2304), and I_qbs is the quiescent current of the high-side driver (~150 µA). For a MOSFET with Qg=50 nC at t_on=10 µs and 100 kHz switching, use Cbs >= 0.47 µF ceramic (X7R) and an ultrafast recovery diode (UF4007, ES1J, or better) rated above 600 V reverse voltage. Under-size the bootstrap cap and the high-side will UVLO, causing shoot-through at high duty cycle.
Layout recommendations: Place the VCC bypass capacitor (1 µF to 10 µF ceramic) within 5 mm of the VCC pin, and add a 100 nF ceramic in parallel for high-frequency decoupling. The VB-to-VS capacitor should be within 3 mm of the package, with the bootstrap diode placed close to the VB pin. Keep the high-side HO and VS traces short and away from the low-side LO trace to minimize capacitive coupling that could cause false triggering. Use a ground plane under the COM pin with multiple vias to reduce parasitic inductance in the gate-drive return path.
Common pitfalls to avoid: (1) Never exceed the absolute maximum VBS supply voltage of 20 V - some users add a 15 V Zener from VCC to VBS, but this is only required if the bootstrap capacitor can overcharge. (2) The high-side channel is rated for negative VS transients of -5 V for 500 ns; sustained negative VS below COM will damage the IC. (3) The single-input IR2304 controls both outputs from one PWM signal - applications needing independent control of high-side and low-side must use the IR2301 or IRS2003 instead. (4) Do not use the IR2304 as a simple logic buffer - the floating channel is designed for switching, not DC load drive.
Estimated: At VCC=15 V, no load, the IR2304STRPBF quiescent current is approximately 1 mA, dissipating about 15 mW. Under full switching load at 100 kHz with Qg=50 nC MOSFETs, dynamic dissipation is approximately 2 * VCC * Qg * fsw = 2 * 15 V * 50 nC * 100 kHz = 150 mW. Total power dissipation in the 8-SOIC (theta_JA ~150 C/W on 1 sq inch copper) yields a junction temperature rise of 25 C above ambient - well within the 125 C maximum, so no heatsink is required for typical half-bridge applications.
Compliance Information
PbF suffix indicates RoHS / lead-free compliance per Infineon product marking convention. Not AEC-Q100 qualified; for automotive applications consider AEC-Q100-qualified Infineon gate drivers. Halogen-free status not explicitly stated in verified data.
