IR2101STRPBF - 600V Half-Bridge Gate Driver | Infineon
MPN: IR2101STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.55 | $0.55 |
| 10 | $0.46 | $4.60 |
| 100 | $0.35 | $35.00 |
| 500 | $0.3 | $150.00 |
| 1,000 | $0.26 | $260.00 |
| 2,500 | $0.22 | $550.00 |
IR2101STRPBF Overview
A gate driver is a power-management IC that sits between a low-power controller (logic-level PWM signal) and the gate of a discrete power transistor (MOSFET or IGBT). It level-shifts the logic-level PWM up to the rail needed to drive the high-side switch in a half-bridge or full-bridge topology, and provides the brief bursts of high peak current needed to quickly charge and discharge the power device's gate capacitance. In the system hierarchy, the gate driver belongs to the power-management IC family and is the enabling link between a digital controller and the high-current switching stage in any SMPS, motor-drive, or Class-D audio amplifier.
The IR2101STRPBF key feature set includes integrated bootstrap diode (eliminating the need for an external discrete diode), undervoltage lockout (UVLO) for both VCC and VBS rails, 3.3 V / 5 V / 15 V logic-compatible inputs, and matched propagation delays between high-side and low-side channels. The floating high-side channel is designed to operate up to 600V above the floating return, and the dV/dt immunity is engineered to reject the fast transient edges present in hard-switched half-bridge nodes. The combination of these features keeps the BOM small while delivering reliable drive for half-bridge, full-bridge, and three-phase inverter stages.
Architecturally, the device uses a level-shifted high-side channel with an integrated bootstrap diode that charges the VBS floating supply capacitor on every low-side cycle. Logic inputs are TTL/CMOS compatible and the inputs include a shutdown feature on the LIN pin. The matched internal delay paths ensure the dead-time inserted by the controller is preserved between the high-side and low-side outputs, which is essential to prevent shoot-through currents in half-bridge configurations.
Typical applications for the IR2101STRPBF include DC-DC converter half-bridge stages, motor-control inverter drivers for BLDC and PMSM motors up to 600V, SMPS primary-side high-voltage half-bridges, electronic ballasts for HID lighting, and Class-D audio amplifiers where the driver controls the output MOSFET half-bridge. It is also widely used in industrial automation, solar micro-inverters, and small appliance variable-frequency drives.
When designing with this part, ensure the bootstrap capacitor is sized to provide sufficient gate charge for the high-side MOSFET over the full switching cycle. The VCC decoupling must be a low-ESR ceramic placed as close to the VCC pin as possible, and the floating supply (VBS-VS) requires its own local 0.1 uF + bulk capacitor. The bootstrap diode is internal, so no external diode is needed; however, the bootstrap resistor (sometimes added in series to limit inrush) is not required for most applications.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Engineers evaluating a half-bridge gate driver for a 600V switching stage will find a parametric comparison and application-focused design guidance here.
Drop-in alternatives for IR2101STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR2101STRPBF (same form factor and footprint) β differing in Package, Configuration, RoHS Status, dV/dt Immunity, Logic Input Compatibility.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2101SPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2101STRPBF
β Drop-Inβ In Stock
$0.22 / Unit
View Datasheet βIR2104STRPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.59 / Unit
View Datasheet βIR2103SPBF
β Drop-Inπ Reference alternative (not in catalog)
IR21094S
β Drop-Inπ Reference alternative (not in catalog)
IR2101STRPBF Maximum Ratings & Electrical Characteristics
| Configuration | Half-Bridge (High and Low Side, Independent) |
| Driver Type | Non-Inverting, High-Speed Gate Driver |
| Maximum Offset (Bootstrap) Voltage | 600 V |
| Gate Drive Supply (VCC) | 10 V to 20 V |
| Output Source Current (typ.) | 130 mA |
| Output Sink Current (typ.) | 270 mA |
| Output Peak Current | 210 mA (peak source) |
| Propagation Delay (typ.) | 50 ns |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V CMOS/TTL |
| Bootstrap Diode | Integrated |
| Undervoltage Lockout (UVLO) | Yes (VCC and VBS) |
| Floating Channel dV/dt Immunity | Yes (negative transient tolerant) |
| Package | 8-SOIC (0.154", 3.90 mm body width) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40C to +125C |
| MSL Level | 3 |
| RoHS Status | Compliant |
| Lead Finish | Lead-Free (Pb-free PBF suffix) |
IR2101STRPBF Pin Configuration
| Pin 1 | VCC β Low-side and logic supply voltage (10 V to 20 V); bypass with low-ESR ceramic to COM |
| Pin 2 | HIN β Logic input for high-side output (non-inverting, CMOS/TTL compatible) |
| Pin 3 | LIN β Logic input for low-side output (non-inverting, CMOS/TTL compatible) |
| Pin 4 | COM β Low-side return; reference for VCC and LIN logic |
| Pin 5 | LO β Low-side gate-drive output; swings between VCC and COM |
| Pin 6 | VS β High-side floating supply return (switching node) |
| Pin 7 | HO β High-side gate-drive output; swings between VB and VS |
| Pin 8 | VB β High-side floating supply (bootstrap); referenced to VS, charged via internal diode from VCC |
Typical Applications
IR2101STRPBF is suitable for 7 applications: Half-Bridge SMPS Primary Stage, BLDC / PMSM Motor Drive Inverter, Class-D Audio Amplifier Output Stage, Solar Micro-Inverter Power Stage, HID Lighting Electronic Ballast, Industrial Automation Variable-Frequency Drive, Battery-Powered DC-DC Boost Converter.
Half-Bridge SMPS Primary Stage
The IR2101STRPBF drives the primary-side half-bridge in 600V-class switched-mode power supplies up to several hundred watts. Its 600V offset rating handles the rectified 120/230/240V bus plus inductive ringing margin, while the 130 mA source / 270 mA sink current capability switches MOSFETs in the 100-500V Vds range with nanosecond-scale transition times. The integrated bootstrap diode eliminates an external component on the high-side supply, keeping the BOM minimal. Designers must size the bootstrap capacitor (typically 1 uF ceramic per ampere of gate charge) and ensure VCC decoupling is a low-ESR ceramic placed within 5 mm of pin 1 for noise-free logic-level operation.
Recommended
BLDC / PMSM Motor Drive Inverter
Three IR2101STRPBF devices form the gate-drive stage of a 3-phase BLDC or PMSM inverter for industrial motor control up to 600V bus. Each IC drives one half-bridge leg with 130 mA source current, sufficient for MOSFETs in the 100-200A continuous-current range typical of 1-5 kW motor drives. The matched propagation delay between high-side and low-side channels preserves the controller-inserted dead-time, preventing shoot-through currents that would otherwise destroy the half-bridge. The dV/dt immunity rejects the fast transient edges of the switching node, and the floating channel tolerates negative VS transients caused by inductive load freewheeling.
Recommended
Class-D Audio Amplifier Output Stage
The IR2101STRPBF drives the output half-bridge MOSFETs of a Class-D audio amplifier, where its 50 ns propagation delay and 130/270 mA source/sink currents deliver the fast switching edges required for low-distortion PWM modulation. Audio-band signal integrity benefits from the driver's matched channel delays and integrated bootstrap, which keeps the high-side rail clean during continuous switching. The 600V rating covers automotive and prosumer audio rails comfortably. For subwoofer or high-power amplifier designs above 500W per channel, verify thermal dissipation in the SOIC-8 package - the 31 C/W theta_JA can limit continuous power-handling capability.
Recommended
Solar Micro-Inverter Power Stage
In a solar micro-inverter topology, the IR2101STRPBF drives the high-frequency primary-side half-bridge of the DC-DC or DC-AC stage, converting the photovoltaic panel's DC output to grid-compatible AC. The 600V rating handles the rectified PV bus plus the resonant tank overshoot in LLC or phase-shifted topologies. The integrated bootstrap reduces part count on the high-voltage side, which is critical for reliability and long-term outdoor operation. Undervoltage lockout on both VCC and VBS prevents the half-bridge from switching with insufficient gate drive, protecting the power MOSFETs from linear-region conduction losses.
Recommended
HID Lighting Electronic Ballast
The IR2101STRPBF drives the half-bridge switching stage of an electronic ballast for high-intensity-discharge (HID) lamps used in automotive headlights, street lighting, and industrial projectors. Its 600V rating handles the rectified mains bus, while the fast 50 ns propagation delay enables zero-voltage-switching (ZVS) operation at the resonant tank frequency. The non-inverting logic input accepts 3.3V/5V microcontroller PWM directly, simplifying ballast controller design. The internal bootstrap diode eliminates one component per half-bridge, reducing ballast size and cost for high-volume lighting production.
Recommended
Industrial Automation Variable-Frequency Drive
In an industrial VFD controlling AC induction or PMSM motors from a 380-480V three-phase bus, the IR2101STRPBF serves as the gate driver for the rectifier-to-inverter stage or the auxiliary half-bridge converter. The 600V rating provides adequate margin for the rectified 480V bus plus ringing transients, and the floating channel's dV/dt immunity is engineered to reject the harsh switching environment of a motor-drive inverter. The TTL/CMOS-compatible inputs interface directly with the VFD's DSP controller, and the matched channel delays preserve dead-time across the half-bridge, critical for reliable long-term motor-drive operation.
Recommended
Battery-Powered DC-DC Boost Converter
For battery-powered applications requiring a high-side switch in a boost or SEPIC converter, the IR2101STRPBF drives the high-side MOSFET with its integrated bootstrap supplying the floating gate-drive rail. Although its 600V rating is overkill for low-voltage battery applications, the part is widely used as a generic half-bridge driver where one is already on the BOM. The non-inverting input and 3.3V/5V logic compatibility make it easy to interface with battery-management MCUs. Designers should select the smallest VCC-bypass capacitor that meets the local-supply noise requirement to minimize inrush current at battery connect.
Recommended
Recommended Products Summary
Engineering reference data for IR2101STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2101SPBF | IR2104STRPBF | IR2103SPBF | IR21094S |
|---|---|---|---|---|---|
| Package | 8-SOIC | 8-SOIC (same) | 8-SOIC (same) | 8-SOIC (same) | 8-SOIC (same) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Maximum Offset Voltage | 600 V | 600 V | 600 V | 600 V | 600 V |
| Integrated Bootstrap Diode | Yes | Yes | Yes | No (external required) | Yes |
| UVLO (VCC and VBS) | Yes | Yes | Yes | Yes | Yes |
| Packaging Format | Tape & Reel (STRPBF) | Tube (SPBF) | Tape & Reel (STRPBF) | Tube (SPBF) | Tube (S) |
Key Differentiators
- Integrated bootstrap diode eliminates one external component per half-bridge (vs IR2103SPBF)
- Same datasheet family and pinout as IR2101SPBF, identical electrical specs (vs IR2101SPBF)
- 3.3 V / 5 V / 15 V logic input compatibility (vs IR21094S)
- Wide VCC supply range (10 V to 20 V) supports various gate-drive requirements (vs IR2101SPBF)
Design Notes
Estimated: At VCC = 15 V with the high-side and low-side outputs unloaded (no MOSFETs connected), the IR2101STRPBF quiescent current draw is approximately 1-2 mA from VCC. When driving a half-bridge with typical MOSFETs at 100 kHz, the total VCC current scales linearly with switching frequency and gate charge (e.g. for Qg=50 nC at 100 kHz: I_VCC = Qg * f = 50 nC * 100 kHz = 5 mA per channel). Always provide a low-ESR ceramic bypass capacitor (>= 1 uF) directly on VCC and another on VB-VS to handle the gate-charge transfer pulses without ripple-induced UVLO events.
Place the VCC bypass capacitor (>= 1 uF low-ESR ceramic, X7R 25V minimum) within 5 mm of the VCC pin to ground, with a short wide trace to the COM pin. Place a separate 0.1 uF + bulk (>= 1 uF) capacitor between VB and VS, physically close to those two pins - this is the floating bootstrap rail and any series inductance will cause VBS droop during the high-side on-time. Keep the high-current switching loop (HO-VS-MOSFET-load-return) tight and minimal area to reduce EMI. Avoid running sensitive analog signals under the switching node trace.
The IR2101STRPBF SOIC-8 package has a theta_JA of approximately 150 C/W on a standard 1-oz 2-layer 1 sq-inch copper pad. The IC itself dissipates very little power (typically < 100 mW) because it only drives the gate of external MOSFETs - thermal failure is rare. However, the package shares copper with the high-current switching loop, so thermal coupling to nearby power MOSFETs is significant. Ensure the IR2101's copper pad does not overlap the MOSFET drain tab on the opposite side of the PCB, or the IR2101 will absorb conducted heat from the power stage.
Common pitfall #1: Forgetting the bootstrap capacitor - without it the high-side gate will not turn on and the half-bridge will fail silently. Common pitfall #2: Using an electrolytic or tantalum instead of ceramic for the bootstrap capacitor - the high ripple current during switching will overheat an electrolytic and degrade it. Always use X7R ceramic (>= 1 uF, 25V minimum). Common pitfall #3: Leaving the HIN/LIN pins floating during board bring-up - they will pick up noise and randomly switch the half-bridge, possibly causing shoot-through. Tie unused inputs to COM (logic-low) through 10 kohm pull-downs.
Place the IR2101STRPBF as close as physically possible to the gate and source pins of the driven MOSFETs - long gate traces add inductance and cause ringing that slows switching edges and increases EMI. Keep the HO trace and VS trace to the high-side MOSFET short and parallel to minimize loop inductance. For multi-layer boards, place a solid ground plane on the layer directly under the IR2101 and its switching node to provide a low-impedance return path for the gate-drive currents. If designing for > 100 kHz operation, consider a 4-layer board with dedicated ground and power planes.
Compliance Information
RoHS compliant per Infineon product page. Lead-free PBF suffix. Halogen-free status not explicitly stated in available data. Not AEC-Q100 qualified (industrial/commercial grade).
