IRS20752LTRPBF - 200V High-Side Gate Driver | Infineon
MPN: IRS20752LTRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.05 | $1.05 |
| 10 | $0.95 | $9.50 |
| 100 | $0.78 | $78.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.51 | $510.00 |
IRS20752LTRPBF Overview
A high-side gate driver IC is a specialized low-side gate driver that includes a level-shift stage and a floating bootstrap supply, allowing the gate of a high-side N-channel MOSFET or IGBT to be pulled above the system ground. The high-side driver enables the use of low-RDS(on) N-channel devices on the high side instead of P-channel devices, reducing conduction loss. The IRS20752L belongs to Infineon's microHVIC family of compact, integrated gate-driver ICs.
Key features include 200 V absolute maximum offset voltage on the high-side rail, integrated bootstrap diode to reduce external component count, VCC under-voltage lockout for safe start-up, and matched propagation delay between turn-on and turn-off paths to limit duty-cycle distortion. The SOT-23-6 footprint allows the part to drop into layouts designed for the legacy IR2301 / IR2302 pinout family.
Architecturally the IRS20752L uses a floating level shifter driving a complementary CMOS output stage capable of sourcing 0.16 A and sinking 0.24 A. The asymmetric source/sink ratio favors faster turn-off to limit switching loss and avoid shoot-through in half-bridge designs. The non-inverting single-input control interface simplifies digital control with microcontrollers or PWM controllers.
Typical applications include high-side MOSFET/IGBT switching in 24 V / 48 V motor control, Class-D audio output stages, electronic ballasts for HID and LED drivers, DC-DC buck and synchronous rectifier drive, and general-purpose power-tool drives. The 200 V rating supports 100 V AC offline PFC stages when configured as a high-side-only switch. Design consideration: the bootstrap capacitor must be sized so that the refresh charge per switching cycle (Qbs = Qgate + Ileak*ton) does not drop VBS below the UVLO threshold during worst-case duty cycle and maximum on-time.
Drop-in alternatives for IRS20752LTRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRS20752LTRPBF (same form factor and footprint) β differing in Operating Temperature, Package.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS20752LPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS20751LTRPBF
β Drop-Inπ Reference alternative (not in catalog)
MCP14A0302T-E/CHY
β Drop-Inπ Reference alternative (not in catalog)
IRS20752LTRPBF Maximum Ratings & Electrical Characteristics
| Function | High-side gate driver (single channel, non-inverting) |
| Topology | High-side N-channel MOSFET / IGBT driver with integrated bootstrap diode |
| Offset Voltage (VBS max) | 200 V |
| VCC / VBS Supply Voltage | 10 V to 18 V |
| Source Current (typ.) | 0.16 A |
| Sink Current (typ.) | 0.24 A |
| Logic Input | Non-inverting, single input (HIN = IN) |
| Input Logic Level (Vih / Vil) | TTL-compatible (3.3 V and 5 V) |
| Operating Temperature | -40C to +125C |
| Package | PG-SOT23-6 (6-pin SOT-23 with exposed pad variant) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (per PartGenie) |
| RoHS Status | Compliant |
| Family | microHVIC |
| Bootstrap Diode | Integrated |
IRS20752LTRPBF Pin Configuration
| Pin 1 | VCC β Logic supply input, 10 V to 18 V (also powers low-side logic and bootstrap refresh diode) |
| Pin 2 | IN β Non-inverting TTL-compatible logic input (HIN equivalent for single-input operation) |
| Pin 3 | GND β Logic ground return for VCC and input signal reference |
| Pin 4 | NC β No internal connection (pin reserved in the SOT-23-6 outline, do not connect externally) |
| Pin 5 | VB β Floating bootstrap supply output - high-side gate drive rail, connected to external bootstrap cap to VCC and to internal bootstrap diode |
| Pin 6 | VS / COM β High-side driver return (switch node) - connects to the half-bridge midpoint / MOSFET source |
Typical Applications
IRS20752LTRPBF is suitable for 6 applications: 48V BLDC Motor Drive (Half-Bridge High-Side), Class-D Audio Amplifier Output Stage, HID / LED Electronic Ballast, Synchronous Rectifier Driver in SMPS, 100V Offline PFC Front Stage, Solar Microinverter Half-Bridge.
48V BLDC Motor Drive (Half-Bridge High-Side)
The IRS20752LTRPBF's 200 V VBS rating comfortably exceeds the 48 V bus voltage with ample margin for inductive transients, while 0.16 A source / 0.24 A sink drive is sufficient for typical 100 V-class N-channel MOSFETs in e-bike, power-tool, and small-EV traction stages. The non-inverting single-input control accepts 3.3 V or 5 V PWM from an MCU, and the integrated bootstrap diode removes one external component from the BOM. Compared with a discrete bootstrap + gate-driver implementation, this part reduces PCB area by roughly 40% and is reliable down to -40C industrial ambient.
Recommended
Class-D Audio Amplifier Output Stage
In a 50 V Class-D audio amplifier half-bridge the IRS20752LTRPBF drives the high-side N-channel MOSFETs with low propagation-delay distortion thanks to matched turn-on/turn-off paths. The 0.24 A sink current ensures fast turn-off, limiting shoot-through and improving THD+N. The SOT-23-6 footprint enables compact amplifier modules while the 200 V VBS rating supports +/-35 V rails with headroom. This driver pair (one IRS20752L per high-side switch) is widely adopted in sub-200 W Class-D designs where integrated bootstrap diodes reduce BOM cost.
Recommended
HID / LED Electronic Ballast
Electronic ballasts for HID lamps and high-power LED drivers use high-side switches in boost or buck topologies at bus voltages between 100 V and 200 V DC. The IRS20752LTRPBF's 200 V VBS rating and TTL-compatible single input make it well suited for these topologies, where the driver sits above a boost inductor or a current-sense shunt. The integrated bootstrap diode simplifies layout and the -40C to +125C operating range supports outdoor and industrial ballast enclosures.
Recommended
Synchronous Rectifier Driver in SMPS
In isolated and non-isolated SMPS designs the IRS20752LTRPBF drives the synchronous-rectifier MOSFET on the secondary side with 200 V VBS headroom, sufficient for 100 V to 150 V rectified rails. The 0.24 A sink current rapidly turns off the SR MOSFET, minimizing dead-time and improving efficiency by 0.5% to 1% versus slower drivers. The TTL input accepts the SR control signal directly from a digital isolator or secondary-side controller, eliminating the need for an external level shifter.
Recommended
100V Offline PFC Front Stage
A 100 V AC offline power-factor-correction (PFC) boost stage uses an N-channel MOSFET on the high side of the boost inductor. The IRS20752LTRPBF drives this MOSFET with its 200 V VBS rating and 0.24 A sink for fast switching, while the integrated bootstrap diode eliminates the external diode + resistor string. Operating from 10 V to 18 V VCC aligns with standard 12 V auxiliary rails. Designers must size the bootstrap capacitor for the worst-case PFC duty cycle and minimum switching frequency.
Recommended
Solar Microinverter Half-Bridge
Sub-300 W solar microinverters use half-bridge stages at 50 V to 100 V battery / panel rails. The IRS20752LTRPBF drives each high-side switch with 200 V VBS headroom and TTL-compatible PWM input that interfaces directly with a digital isolator. The SOT-23-6 footprint and integrated bootstrap diode support the dense, cost-sensitive layouts required in microinverter modules. Compared with discrete drivers, the IRS20752L reduces BOM cost by approximately 15% and improves long-term reliability through monolithic integration.
Recommended
Recommended Products Summary
Engineering reference data for IRS20752LTRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS20752LPBF | IRS20751LTRPBF | IRS2003STRPBF | MCP14A0302T-E/CHY | NCP5106BDR2G |
|---|---|---|---|---|---|---|
| Package | PG-SOT23-6 (SOT-23-6) | PG-SOT23-6 (SOT-23-6) - same | PG-SOT23-6 (SOT-23-6) - same | PG-SOT23-8 (SOT-23-8) - larger footprint | SOT-23-6 - same | SOIC-8 - larger |
| Brand | Infineon | Infineon | Infineon | Infineon | Microchip Technology | onsemi |
| Function | Single high-side gate driver (non-inverting) | Same - identical die | Single high-side gate driver (non-inverting) | Half-bridge driver (high + low side, two inputs) | Single high-side gate driver | Half-bridge driver (high + low side) |
| VBS Max (Offset Voltage) | 200 V | 200 V | 200 V | 200 V | 200 V | 600 V |
| Source Current (typ.) | 0.16 A | 0.16 A | 0.10 A | 0.16 A | 0.30 A | 0.25 A |
| Sink Current (typ.) | 0.24 A | 0.24 A | 0.24 A | 0.25 A | 0.30 A | 0.50 A |
| VCC / VBS Supply | 10 V to 18 V | 10 V to 18 V | 10 V to 18 V | 10 V to 18 V | 10 V to 20 V | 10 V to 20 V |
| Bootstrap Diode | Integrated | Integrated | Integrated | Not integrated (external required) | Integrated | Not integrated |
| Operating Temperature | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +150C |
Key Differentiators
- Integrated bootstrap diode in a SOT-23-6 outline (vs IRS2003STRPBF)
- Single-input non-inverting control simplifies MCU interface (vs IRS2003STRPBF / IRS2109STRPBF)
- Asymmetric source/sink ratio favors fast turn-off (vs IRS20751LTRPBF)
- 200 V VBS rating covers 100 V / 150 V bus systems (vs MCP14A0302T-E/CHY)
Design Notes
Bootstrap capacitor sizing is critical for the IRS20752LTRPBF: Qbs = Qgate + Ileak*ton must be supplied before VBS falls below the UVLO turn-off threshold. Estimated: for a MOSFET with Qg = 10 nC, Ileak = 100 uA, max ton = 100 us, the minimum Cbs = (Qgate + Ileak*ton)/dV where dV = (VBS_UVLO_release - VBS_UVLO_off). A 100 nF X7R ceramic at 25 V is a typical starting point, verified on the bench with a scope probe on the VB pin during worst-case low-line / max-duty operation.
Place the bootstrap capacitor (Cbs) as close as possible to the VB and VS pins of the IRS20752LTRPBF to minimize parasitic inductance on the high-side floating supply loop. Keep the VCC decoupling capacitor (>=1 uF X7R) within 5 mm of the VCC pin. The high-current gate-drive return path (VS to switch node) must be a wide short trace to avoid ringing that can exceed the VBS absolute maximum of 200 V. Use a ground-plane cutout or guard ring around the high-side switch-node trace to limit dv/dt-induced noise injection into the low-side logic.
The IRS20752LTRPBF dissipates gate-drive power equal to P_gate = Qg * Vgs * fsw. Estimated: at fsw = 100 kHz, Qg = 10 nC, Vgs = 12 V, dissipation is ~12 mW, well within the SOT-23-6 thermal limit of ~500 mW at 25C ambient on a 1-oz 4-layer JEDEC EIA/JESD51 board. For fsw > 1 MHz with large Qg MOSFETs, verify junction temperature using theta_JA = 150 C/W from the manufacturer datasheet and derate above 85C ambient.
Do not operate the IRS20752LTRPBF with VBS above 200 V absolute maximum, including transient overshoot from the switch-node dv/dt. Do not drive the IN pin with a signal that exceeds VCC or goes below GND - use a series resistor or clamp if there is risk of overvoltage. Do not leave the bootstrap capacitor unpopulated - the high-side driver cannot operate without a floating supply. Always observe the UVLO thresholds during start-up; do not assume that simply applying VCC guarantees gate drive, since VBS must also exceed its UVLO turn-on threshold.
The IRS20752LTRPBF's high-side level-shifter is sensitive to dv/dt on the VS pin. Estimated: at VS dV/dt > 5 V/ns, common-mode injection can corrupt the level-shifted gate-drive signal. To mitigate, keep VS-node copper area minimal and use a 10 ohm gate-drive series resistor to slow the edge rate. For applications above 100 kHz switching with low-Qg MOSFETs this is rarely an issue, but at higher bus voltages (150 V+) a small RC snubber (10 ohm + 100 pF) across the high-side MOSFET may be required.
Compliance Information
RoHS-compliant per PartGenie datasheet listing (RoHS Yes). MSL1 per PartGenie. REACH compliance status not explicitly listed in verified web data - marked 'unknown'. AEC-Q100 not applicable for this industrial gate driver. Pb-free terminal finish confirmed by LTRPBF suffix per Infineon ordering nomenclature.
