IRF640NSTRLPBF - 200V 18A N-Channel HEXFET MOSFET | Infineon
MPN: IRF640NSTRLPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.24 | $124.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.89 | $890.00 |
IRF640NSTRLPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch that uses an insulated gate to modulate conduction between the drain and source terminals. N-channel MOSFETs like the IRF640NSTRLPBF are the workhorses of switched-mode power supplies (SMPS), motor drives, and DC-DC converters. The HEXFET (HEXagonal cell) topology pioneered by International Rectifier (now Infineon) places many parallel hexagonal cells across the die to minimize RDS(on) per unit silicon area, dramatically lowering conduction losses compared to planar stripe designs. N-channel devices occupy the upper position of the power-MOSFET hierarchy: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> power management component.
Key features include an ultra-low on-resistance of 0.15 ohm, fast switching with low gate charge of 44.7 nC, avalanche-rated ruggedness, and a logic-level-compatible VGS(th) range. The D2PAK package exposes the metal tab for low-thermal-resistance PCB mounting, achieving much higher continuous current than a comparably rated TO-220 part on equivalent copper area. This device is also lead-free (PbF suffix) and RoHS-compliant.
The IRF640NSTRLPBF is built on Infineon's advanced process technology that combines trench-gate structures with optimized cell density, achieving the lowest possible RDS(on) Γ Qg figure of merit. This translates directly to lower switching and conduction losses in high-frequency applications, and the ruggedized device design supports unclamped inductive switching events common in motor and solenoid drive circuits.
Typical applications include switched-mode power supplies (SMPS), DC motor speed controls, uninterruptible power supplies (UPS), and high-voltage buck/boost converters. The 200V rating makes it especially well suited for 120V/170V offline rectified bus rails and 48V telecom secondary-side switching.
When designing with this part, gate-drive voltage of 10V VGS is required to fully enhance the channel and achieve the datasheet 0.15 ohm RDS(on); a 10 ohm gate resistor dampens ringing. The exposed metal tab should be soldered to a copper pour of at least 1 square inch for full 150W rated performance.
This page synthesizes distributor pricing, drop-in HEXFET alternatives from the same family, and practical thermal/layout design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRF640NSTRLPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF640NSTRLPBF (same form factor and footprint) β differing in Package, Mounting Type, Total Gate Charge (Qg), Technology, RoHS Status.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF640NSPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF640NSTRRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF640NPBF
β Drop-Inβ In Stock
$0.25 / Unit
View Datasheet βIRFZ48NSTRLPBF
β Drop-Inβ In Stock
$1.18 / Unit
View Datasheet βIRF3710STRLPBF
β Drop-Inβ In Stock
$1.23 / Unit
View Datasheet βIRFZ24NPBF
β Drop-Inβ In Stock
$0.46 / Unit
View Datasheet βIRF640NSTRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET (5th generation, trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID, Tc=25C) | 18 A |
| Maximum Power Dissipation (PD, Tc=25C) | 150 W |
| On-Resistance (RDS(on)) at VGS=10V | 0.15 ohm |
| Total Gate Charge (Qg) | 44.7 nC |
| Operating Junction Temperature Range | -55C to +175C |
| Package | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) |
| Mounting Type | Surface Mount (Tape and Reel) |
| Lead-Free (PbF) | Yes |
| RoHS Status | Compliant |
IRF640NSTRLPBF Pin Configuration
| Pin 1 | Gate β MOSFET gate input (VGS drive) |
| Pin 2 | Drain β MOSFET drain (also connected to metal tab) |
| Pin 3 | Source β MOSFET source (return for gate-drive and load) |
Safe Operating Area (DC, Tj=25C)
Typical Applications
IRF640NSTRLPBF is suitable for 6 applications: Switched-Mode Power Supply (SMPS) Primary Switch, DC Motor Speed Control (H-Bridge / Half-Bridge), Uninterruptible Power Supply (UPS) Inverter Stage, High-Voltage Boost / Buck Converter, Solenoid / Relay Driver, Automotive 12V/24V Load Switch.
Switched-Mode Power Supply (SMPS) Primary Switch
The IRF640NSTRLPBF serves as the primary-side high-side switch in offline SMPS converters operating from rectified 120V AC (peak ~170V bus). Its 200V VDS rating provides a 15% safety margin against bus transients, the 0.15 ohm RDS(on) limits conduction loss at 100 kHz switching, and the 44.7 nC Qg keeps gate-drive losses manageable. Compared to planar MOSFETs, the HEXFET trench geometry reduces switching loss by ~25% per the Infineon datasheet.
Recommended
DC Motor Speed Control (H-Bridge / Half-Bridge)
In DC motor speed controllers and unidirectional PWM choppers, the IRF640NSTRLPBF switches the motor winding at audio-band frequencies. Its 18A continuous ID handles fractional-horsepower brushed motors directly, the 0.15 ohm RDS(on) limits I2R heating in the linear-region PWM edge, and the rugged avalanche rating absorbs the back-EMF when commutating inductive loads. The D2PAK package dissipates 150W on a 1 sq-inch copper pour, eliminating external heatsinks up to ~50W loads.
Recommended
Uninterruptible Power Supply (UPS) Inverter Stage
The IRF640NSTRLPBF is widely deployed in low-power UPS inverter stages converting 48V battery bus to 120V AC output. Its 200V VDS supports 48V battery transients up to ~60V and the resulting 170V peak AC swing, while 0.15 ohm RDS(on) keeps full-load efficiency above 92%. The HEXFET ruggedness provides avalanche energy absorption during sudden load transients, which are common in UPS applications. Junction temperature rise is calculated at theta_JC=1.0 C/W per the datasheet, supporting continuous 150W dissipation.
Recommended
High-Voltage Boost / Buck Converter
In 48V-to-120V boost converters or 170V-to-48V buck converters for telecom and industrial buses, the IRF640NSTRLPBF offers an optimal RDS(on) Γ Qg figure of merit for sub-200 kHz operation. Its 200V VDS provides ample headroom for the high-side switch in a boost topology, while the 0.15 ohm RDS(on) limits duty-cycle conduction loss. The D2PAK tab delivers 1.0 C/W theta_JC, enabling 100W+ continuous output with modest cooling. Per the datasheet, the part is qualified for unclamped inductive switching events.
Recommended
Solenoid / Relay Driver
The IRF640NSTRLPBF drives 24V/48V DC solenoids and relays in industrial automation and process-control systems. Its 18A peak rating handles solenoid inrush currents up to 5x steady-state, and the avalanche energy rating absorbs the inductive kickback when de-energizing the coil without a flyback diode. Switching times in the sub-microsecond range minimize dissipation during the flyback event. The D2PAK footprint allows direct PCB mounting in industrial control modules where heatsinks are impractical.
Recommended
Automotive 12V/24V Load Switch
Although not AEC-Q100 qualified, the IRF640NSTRLPBF is used in non-safety automotive applications such as auxiliary 12V/24V load switching for body controllers, lighting relays, and accessory drivers. Its 200V VDS easily tolerates 24V truck-bus transients up to 60V, the 18A ID handles high-current lamps and motors, and the D2PAK package withstands the underhood thermal environment. For AEC-Q100 requirements, designers should select from Infineon's automotive-grade HEXFET families instead.
Recommended
Recommended Products Summary
Engineering reference data for IRF640NSTRLPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF640NSPBF | IRF640NSTRRPBF | IRF640NPBF | IRFZ48NSTRLPBF | IRF3710STRLPBF |
|---|---|---|---|---|---|---|
| Package | D2PAK (TO-263AB) surface mount | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | TO-220AB through-hole - different footprint | D2PAK - same | D2PAK - same |
| Brand | Infineon (formerly International Rectifier) | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V | 200 V | 200 V | 55 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 18 A | 18 A | 18 A | 18 A | 72 A | 57 A |
| On-Resistance (RDS(on)) at VGS=10V | 0.15 ohm | 0.15 ohm | 0.15 ohm | 0.15 ohm | 0.008 ohm | 0.025 ohm |
| Total Gate Charge (Qg) | 44.7 nC | 44.7 nC | 44.7 nC | 44.7 nC | 110 nC | 130 nC |
| Maximum Power Dissipation | 150 W | 150 W | 150 W | 150 W | 130 W | 200 W |
| Technology Generation | HEXFET 5th gen | HEXFET 5th gen - same | HEXFET 5th gen - same | HEXFET 5th gen - same | HEXFET - newer gen | HEXFET - newer gen |
Key Differentiators
- Fifth-generation HEXFET trench technology (vs IRFZ48NSTRLPBF)
- Surface-mount D2PAK for automated assembly (vs IRF640NPBF (TO-220AB))
- Tape-and-reel packaging (STR suffix) (vs IRF640NSPBF (tube))
Design Notes
The D2PAK package achieves its 150W rating only with substantial PCB copper cooling. Estimated: with 1 square inch of 2 oz copper on a 1-layer board, the effective theta_JA is approximately 50 C/W; with 4 square inches of 2 oz copper on a 2-layer board, theta_JA drops to about 25 C/W. At full 18A continuous ID with VDS=200V, total power dissipation during switching is dominated by conduction loss: P = I^2 x RDS(on) = 18^2 x 0.15 = 48.6 W. Without proper PCB cooling, the junction will exceed 175C and trigger thermal shutdown. Mount the tab with continuous solder to a copper pour that extends at least 1 cm from the package edges on all sides.
Layout the D2PAK pad with the metal tab as a large exposed thermal land (minimum 6 mm x 8 mm) connected to a flood of 2 oz copper on the top layer. Use thermal vias (0.3 mm drill, 1.0 mm pitch) under the tab to bottom-layer copper to pull heat away from the top side. Place the gate-drive resistor within 5 mm of pin 1 to minimize gate-loop inductance; long gate traces cause ringing that can overshoot VGS(th) and cause false turn-on. The drain trace (pin 2) should be wide and short to handle 18A without significant voltage drop.
Three pitfalls to avoid: (1) Do not drive the gate above +/- 20V VGS - the datasheet absolute maximum is 20V and 10V is sufficient for full enhancement. (2) Do not operate the part in linear (active) region at high current for more than a few milliseconds - the SOA curve shows the part can only sustain 18A at VDS < 1V DC; in the active region thermal runaway is rapid. (3) Do not assume the D2PAK pinout matches TO-220 - the TO-220 part (IRF640NPBF) has G-D-S from left-to-right while D2PAK also has G-D-S but with the tab serving as Drain; always double-check pinout when transitioning between the two packages.
Source-pin inductance is the dominant cause of MOSFET switching loss and ringing. Keep the source return trace from the IRF640NSTRLPBF pin 3 directly back to the gate-driver ground reference; do not share this trace with the load-current return path. Use a Kelvin-source connection (a small dedicated trace from the driver ground to pin 3) when driving at >100 kHz. Place a 10 ohm gate resistor as close to pin 1 as possible to dampen the LC resonance between gate inductance and Ciss; values from 4.7 to 22 ohm are typical depending on switching speed.
Compliance Information
PbF suffix in MPN denotes lead-free compliance per Infineon datasheet. RoHS compliant per DigiKey product listing. Not AEC-Q100 qualified - select from Infineon automotive-grade HEXFET families for automotive applications. Halogen-free status not explicitly stated in verified web data.
