K3KLELE0DM-BGCU - 144Gb LPDDR5X 8533Mbps DRAM | Samsung
MPN: K3KLELE0DM-BGCU ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K3KLELE0DM-BGCU — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →K3KLELE0DM-BGCU Maximum Ratings & Electrical Characteristics
| Density | 144 Gb |
| Memory Type | LPDDR5X SDRAM |
| Organization | x64 |
| Data Rate | 8533 Mbps |
| Supply Voltage (VDD1) | 1.8 V |
| Supply Voltage (VDD2) | 1.05 V |
| Supply Voltage (VDDQ) | 0.9 V |
| Supply Voltage (VDDCA) | 0.5 V |
| Package | 496-ball FBGA |
| Operating Temperature | -25 C to +85 C |
| Mounting Type | Surface Mount |
| Application Class | AI and in-vehicle devices |
| Product Status | EOL |
| Interface | LPDDR5X |
| Power Efficiency vs Previous Generation | Approx. 25% better (per Samsung) |
| Speed vs Previous Generation | Approx. 1.25x faster (per Samsung) |
K3KLELE0DM-BGCU 496-ball fbga Pin Configuration Guide
Complete pinout information for K3KLELE0DM-BGCU (496-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K3KLELE0DM-BGCU.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K3KLELE0DM-BGCU is suitable for 6 applications: AI Edge Accelerators, Automotive Infotainment and ADAS, Premium Smartphones and Tablets, High-Performance Embedded Computing, Networking and Edge Servers, Data Center Accelerator Memory (PCB-Attach).
AI Edge Accelerators
The K3KLELE0DM-BGCU provides 144 Gb of local memory with 8533 Mbps bandwidth, directly addressing the memory-bandwidth bottleneck of edge AI inference. With an x64 organization and LPDDR5X signaling, the device sustains high read throughput for transformer and CNN workloads while Samsung's stated ~25% power-efficiency gain versus the previous generation reduces thermal load in fanless enclosures. Placed point-to-point next to the AI SoC on the same PCB, the 496-ball FBGA minimizes trace length, improving signal integrity at 8533 Mbps. The multi-rail supply (1.8/1.05/0.9/0.5 V) allows the host PMIC to scale voltage with workload, trading peak performance for idle power.
Recommended
Automotive Infotainment and ADAS
The device's -25 to +85 C operating range covers automotive cabin environments, and Samsung explicitly targets in-vehicle devices with this LPDDR5X class. Instrument clusters, infotainment SoCs and ADAS perception units require both high display-refresh bandwidth and low latency; the 8533 Mbps rate and LPDDR5X write CRC support error-robust operation. In the 496-ball FBGA footprint, the memory attaches directly to the automotive SoC, avoiding DIMM connectors that suffer vibration reliability issues. Designers should confirm the exact ordering code's automotive qualification level and, given the EOL status, align last-time-buy quantities with the vehicle program's service life.
Recommended
Premium Smartphones and Tablets
LPDDR5X was developed to transcend mobile devices, per Samsung, and this 144 Gb (18 GB-class) package suits flagship smartphones and tablets needing large app footprints, high-resolution cameras and on-device AI. The roughly 1.25x speed increase and 25% efficiency gain versus the previous generation translate directly into faster memory copies and longer battery life. The point-to-point 496 FBGA attach keeps the PCB footprint minimal inside thin form factors. Note that the EOL status makes this MPN primarily a service/repair and short-run sourcing item for mobile platforms; new flagship designs should adopt Samsung's successor LPDDR5X ordering codes.
Recommended
High-Performance Embedded Computing
Embedded compute modules (COMs, SOMs) used in test, vision and industrial robotics benefit from the 144 Gb density and 8533 Mbps bandwidth per package, enabling large frame buffers and data-logging caches without switching to power-hungry DDR5 server memory. LPDDR5X's multi-rail power architecture (1.8/1.05/0.9/0.5 V) integrates cleanly with standard LPDDR PMICs, and the -25 to +85 C range suits industrial enclosures. At 8533 Mbps, layout rules are strict: matched-length fly-by-less point-to-point routing and solid reference planes are mandatory. The EOL status warrants early lifetime planning for multi-year industrial programs.
Recommended
Networking and Edge Servers
Edge servers, 5G baseband units and network appliances need substantial memory bandwidth under constrained power budgets. The K3KLELE0DM-BGCU's 8533 Mbps rate provides the per-package bandwidth for packet buffering, TLS offload and on-box inference, while LPDDR5X efficiency helps meet the telecom power-envelope targets. The 496-ball FBGA is directly compatible with memory subsystems of embedded network SoCs supporting LPDDR5X. Because the part is EOL, network equipment makers should treat current broker stock (Wolfchip reported 39,600 pcs as of Aug 05, 2026) as finite and qualify a successor Samsung LPDDR5X code for future builds.
Recommended
Data Center Accelerator Memory (PCB-Attach)
For accelerator cards that use PCB-attached LPDDR5X as a capacity tier beside HBM, the 144 Gb K3KLELE0DM-BGCU offers high per-package density; multiple packages can be grouped to reach tens of GB of scratch memory for recommendation models and LLM KV-caches. The 8533 Mbps rate with decision-feedback equalization maintains eye margins on controlled-impedance PCB traces up to the lengths defined in the LPDDR5X spec class, while the 0.5 V interface rail keeps I/O power low at scale. Rack thermal designs must account for the -25 to +85 C operating window and package power during sustained training bursts.
Recommended
Recommended Products Summary
Engineering reference data for K3KLELE0DM-BGCU — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K3KL5L50DM-BGCU | K3KL3L30DM-BGCU | K3KLALA0DM-MGCU | K3KL9L90DM-JGCT |
|---|---|---|---|---|---|
| Package | 496-ball FBGA | 496-ball FBGA - same | 496-ball FBGA - same | 496-ball FBGA - same | 496-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 144 Gb | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Interface | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Data Rate | 8533 Mbps | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Organization | x64 | x64 | x64 | x64 | x64 |
| Operating Temperature | -25 C to +85 C | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | EOL | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Maximum density in footprint (vs K3KL5L50DM-BGCU)
- Top LPDDR5X speed bin (vs K3KLALA0DM-MGCU)
- Power efficiency for thermal-limited systems (vs K3KL9L90DM-JGCT)
Design Notes
At 8533 Mbps, LPDDR5X routing requires strict matched-length, point-to-point traces between the SoC and K3KLELE0DM-BGCU with controlled impedance (typically 40-50 ohm single-ended per the controller design guide). Avoid stubs, minimize layer transitions, and maintain solid reference planes under all DQ/CA/DQS nets. Read DFE and write CRC help at the receiver but cannot compensate for gross length mismatch - follow the SoC vendor's LPDDR5X layout checklist before tape-out.
Design a four-rail power tree: 1.8 V (VDD1), 1.05 V (VDD2), 0.9 V (VDDQ) and 0.5 V (interface rail), per the verified spec data. Use a PMIC with LPDDR5X mode to sequence rails and to support VDD2 core-voltage scaling, which is the source of the ~25% efficiency gain Samsung cites versus the previous generation. Estimated: peak package current scales with density and speed, so size regulators using your controller's power spreadsheet, not nominal rail voltage alone.
The part is EOL per distributor data, so a design that qualifies only this MPN faces supply risk within the product's service life. Recommended: (1) confirm stock and date codes with the distributor before design freeze, (2) place a last-time-buy covering the full program lifetime, and (3) pre-qualify a Samsung successor LPDDR5X ordering code in the same 496-ball FBGA footprint to allow drop-in migration without PCB respin.
Compliance Information
No compliance data appears in the verified web data for this MPN. Samsung memory products are generally RoHS-compliant, but this must be confirmed on the official Samsung product page before use in regulated markets.
