Samsung Electronics

K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung

MPN: K4A8G165WB-BCWE ✓ Active
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1.2 V Vdss 96FBGA Package DDR4 SDRAM Memory
From $6.25 USD / Unit
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Price updated: 2026-09-03
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Qty Unit Price Extended
1 $7.61 $7.61
10 $7.3 $73.00
100 $6.95 $695.00
500 $6.6 $3,300.00
1,000 $6.25 $6,250.00
ℹ️ All prices are in USD

Drop-in alternatives for K4A8G165WB-BCWE — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K4A8G165WB-BCTD

✅ Drop-In
Samsung Electronics
📦 96FBGA
DDR4 SDRAM · 512M x 16 · 8 Gb · 2666 Mbps/pin (PC4-2666) · 1.2 V · 96-ball FBGA · 0°C to +95°C (TC) · [DATA_NEEDED: CL value]

✓ In Stock

$37 / Unit

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K4A8G165WB-BCRC

✅ Drop-In
Samsung Electronics
📦 96FBGA
DDR4 SDRAM (DRAM, volatile) · 8 Gb (1 GB) · 512M x 16 · 2400 Mbps (PC4-19200) · 1.2 V (1.14 V to 1.26 V) · CMOS DRAM, Samsung 8Gb B-die · 96-ball FBGA (PBGA96) · 0.8 mm

✓ In Stock

$12.57 / Unit

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K4A8G165WB-BCPB

✅ Drop-In
Samsung Electronics
📦 96FBGA
8 Gb · 512M x 16 · 2133 Mbps (PC4-17000) · 1.2 V (1.14 V to 1.26 V) · 0°C to 85°C · 96-ball FBGA (TFBGA-96) · 8 (BL8) · Sequential and Interleave

✓ In Stock

$2.3 / Unit

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K4A8G165WC-BCWE

✅ Drop-In
Samsung Electronics
📦 96FBGA
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · 2.5 V · 0°C to +95°C · 96-FBGA

✓ In Stock

$38 / Unit

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K4A8G165WG-BCWE

✅ Drop-In
Samsung Electro-Mechanics
📦 96FBGA
DDR4 SDRAM · 8 Gbit · 512M x 16 · 3200 Mbps · 1.2 V · 0°C to +85°C · 20 mA · FBGA-96

✓ In Stock

$44.5 / Unit

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MT40A512M16HA-083E:B

✅ Drop-In
📦 96FBGA
Cross-brand 8Gb DDR4 x16, 96-ball FBGA per JEDEC ball map, 3200-class bin; requires board-level qualification of ball map and timing

📋 Reference alternative (not in catalog)

K4A8G165WB-BCWE Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Memory Size 8 Gb
Memory Organization 512M x 16
Data Rate 3200 Mbps/pin
Supply Voltage 1.2 V
Access Time 19 ns
Interface Parallel
Package 96FBGA
Operating Temperature 0C to +85C
Mounting Type Surface Mount
Memory Format DRAM (volatile)
Technology DDR4 SDRAM B-die
Prefetch 8n
Refresh Self-refresh supported
Termination On-die termination (ODT)

K4A8G165WB-BCWE 96fbga Pin Configuration Guide

Complete pinout information for K4A8G165WB-BCWE (96fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

96fbga package pinout diagram for K4A8G165WB-BCWE

No detailed pinout data available for K4A8G165WB-BCWE.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K4A8G165WB-BCWE Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K4A8G165WB-BCWE is suitable for 6 applications: Networking and Communication Equipment, Embedded Industrial Computing, Consumer Electronics and Smart TV, Desktop and Commercial Computing Modules, Video Surveillance and NVR Systems, Test and Measurement Instrumentation.

🌐

Networking and Communication Equipment

The K4A8G165WB-BCWE fits router, switch, and gateway line cards that need sustained DDR4-3200 bandwidth for packet buffering and lookup tables. Its 8Gb density in a single 96FBGA device lets designers place 1-2 GB of soldered memory without SO-DIMM sockets, improving reliability in fanless equipment. The x16 organization halves device count versus x8, reducing address/control bus loading and simplifying fly-by routing to the memory controller. The 1.2V rail keeps total board power low for thermally constrained telecom enclosures, while 0C to +85C grading covers typical equipment-room ambient conditions with margin.

🏭

Embedded Industrial Computing

Industrial PCs, HMIs, and edge controllers use soldered-down DDR4 like the K4A8G165WB-BCWE to avoid connector vibration failures. The 8Gb 512M x 16 device provides working memory for Linux-based controllers at DDR4-3200, enough bandwidth for multi-protocol stacks and local analytics. Its 1.2V operation cuts memory subsystem power versus DDR3 by roughly 25%, easing fanless thermal budgets. The commercial 0C to +85C range suits enclosed cabinets; for cold storage floors below 0C, select an industrial temperature variant. Soldered FBGA mounting also removes mechanical stress on memory modules in high-shock environments.

📺

Consumer Electronics and Smart TV

Set-top boxes, smart TVs, and streaming media players use 8Gb x16 DDR4 for video frame buffering and application memory. The K4A8G165WB-BCWE's 3200 Mbps rate supports 4K video decode pipelines where the SoC memory interface must sustain high sustained bandwidth for frame buffers. The x16 bus matches common TV SoC controllers, and the single-package solution allows compact, low-cost mainboards without memory sockets. 1.2V operation helps meet energy-star style standby targets, and the standard 96FBGA footprint enables a shared PCB design across multiple die revisions (WB/WC/WG) for supply flexibility.

🖥️

Desktop and Commercial Computing Modules

Soldered-down DDR4 on COM Express or SoM carrier designs benefits from the K4A8G165WB-BCWE's compact 96FBGA footprint. Populating four devices yields 4GB of on-module memory at DDR4-3200, appropriate for Windows or Linux thin clients, POS terminals, and digital-signage players. The x16 organization lets the CPU's two 64-bit channels be populated with balanced ranks using fewer parts than x8 alternatives, trimming BOM cost. Memory training at 3200 Mbps on commercial chipsets is well supported, and the 1.2V rail integrates cleanly with the module's single high-efficiency buck regulator for the memory domain.

🎥

Video Surveillance and NVR Systems

Network video recorders and multi-channel IP camera hubs require large buffers for ingest and transcode streams, which the 8Gb K4A8G165WB-BCWE supplies at DDR4-3200 bandwidth. Multiple devices around an SoC deliver the multi-GB working sets needed for simultaneous H.265 encode/decode of 16+ channels. The 0C to +85C range fits indoor NVR enclosures, and the FBGA soldered design withstands 24/7 operation vibration better than SODIMMs. Power efficiency at 1.2V matters in always-on security hardware where cumulative energy cost is a purchase criterion, and x16 organization reduces controller routing complexity in dense layouts.

🔧

Test and Measurement Instrumentation

Oscilloscopes, logic analyzers, and signal generators need deep capture memory and fast streaming buffers, which the K4A8G165WB-BCWE's 3200 Mbps interface supports. FPGA- or ASIC-based acquisition engines train DDR4-3200 links to sustain continuous sample streaming to 1 GB or more of soldered DRAM. The x16 organization reduces the number of memory devices per instrument channel bank, shortening fly-by routing and easing timing closure on crowded acquisition boards. Bench instruments operate within 0C to +85C, so the commercial grade suffices, and the 96FBGA's known-good Samsung ball map simplifies FPGA memory-controller reuse across product families.

What is the Samsung K4A8G165WB-BCWE?
The K4A8G165WB-BCWE is an 8Gb DDR4 SDRAM from Samsung organized as 512M x 16, operating at 3200 Mbps data rate from a 1.2V supply in a 96FBGA package. It is rated for 0C to +85C commercial operation and belongs to Samsung's B-die DDR4 family. According to the Samsung datasheet, the device uses the standard DDR4 JEDEC interface with 8n prefetch and on-die termination for signal integrity.
What is the price of K4A8G165WB-BCWE?
As of 2026-09-04, the K4A8G165WB-BCWE is listed from approximately $7.607 per unit on LCSC, though the part is shown out of stock there. XAIPART lists tiered pricing starting at $7.61 at quantity 1, declining to about $6.25 at quantity 1000. Because DRAM prices fluctuate with market conditions, request a current quote before ordering production volumes.
Is K4A8G165WB-BCWE in stock and where can I buy it online?
Availability is limited: LCSC lists the K4A8G165WB-BCWE as out of stock as of 2026-09-04, while independent distributors such as Ampheo, Win Source, ICAllIn, and Findchips-listed brokers offer quote-based inventory. On XAIPART, the part is available via RFQ with tiered pricing published. For production needs, also evaluate the drop-in siblings K4A8G165WB-BCTD and K4A8G165WB-BCRC, which share the same 96FBGA footprint.
What is the difference between K4A8G165WB-BCWE and K4A8G165WB-BCTD?
The suffix letters denote the die revision/speed-bin grading within the same WB B-die family; the BCWE is graded for DDR4-3200, and BCTD is a sibling grade in the same 8Gb, 512M x 16, 1.2V, 96FBGA device. Both use the same package and pinout, so they are board-level drop-in candidates, but you must verify the exact speed bin and timing parameters in the Samsung datasheet for your memory controller's operating point before substituting.
Can K4A8G165WB-BCWE replace K4A8G165WB-BCRC?
Yes, the K4A8G165WB-BCWE can typically replace the K4A8G165WB-BCRC: both are Samsung 8Gb DDR4 SDRAM in 512M x 16 organization, 1.2V, 96FBGA packages with the same ball map. The main difference is the speed grade suffix (WE vs RC timing bin). Confirm that your controller's programmed timings are compatible with the WE bin, or run memory training at the target data rate, before production swap.
What is the best drop-in replacement for K4A8G165WB-BCWE?
The best drop-in replacements are same-family Samsung parts in the identical 96FBGA package: K4A8G165WB-BCTD and K4A8G165WB-BCPB (same WB die, other speed/temp grades), and the K4A8G165WC-BCWE / K4A8G165WG-BCWE siblings (same capacity, organization, and package with different die revisions). All are pin-to-pin compatible; only timing parameters and internal die revision differ. Cross-brand equivalents such as Micron MT40A parts are package-family compatible but not guaranteed ball-map drop-ins, so qualify them on your board first.
What is the Micron equivalent for K4A8G165WB-BCWE?
There is no guaranteed pin-to-pin cross-brand equivalent published by Samsung; DDR4 components follow the JEDEC ball map, so 8Gb x16 DDR4 parts from Micron (MT40A512M16 series) and SK Hynix share the same 96-ball functional footprint in principle. However, ball-map details, initialization sequences, and timing bins must be verified against each vendor's datasheet and qualified in-system. XAIPART recommends same-brand Samsung siblings for risk-free drop-in, and cross-brand parts only after board-level qualification.
When should I choose the K4A8G165WB-BCWE over lower-speed DDR4 parts?
Choose the K4A8G165WB-BCWE when your design targets DDR4-3200 bandwidth, for example high-throughput networking line cards, image processing, or computing modules where the memory controller runs at 3200 Mbps/pin. If your controller only runs at DDR4-2400 or DDR4-2666, the lower-cost K4A8G165WB-BCRC saves budget with the same footprint. Choose x16 organization over x8 when you need fewer devices per rank or reduced address/control bus loading in space-constrained boards.
Where can I download the K4A8G165WB-BCWE datasheet PDF?
The K4A8G165WB-BCWE datasheet PDF is available from datasheet repositories such as Alldatasheet (a 23-page datasheet for the BCWE suffix, plus a longer 69-page family datasheet covering the 8Gb B-die x16 DDR4 SDRAM) and DigChip, and from Samsung Semiconductor's official product page. XAIPART also links the datasheet from this product page. Always use the Samsung original document for timing tables and ball-map details during design.
Where can I find the K4A8G165WB-BCWE pinout and ball map?
The K4A8G165WB-BCWE ball map is defined in the Samsung 8Gb B-die DDR4 x16 datasheet for the 96FBGA package; it follows the standard DDR4 x16 JEDEC ball assignment with DQ[15:0], DQS/DQS#, address/command balls, power/ground balls, and VPP. Because the full 96-ball table is lengthy and must be exact, consult the datasheet ball-map section rather than secondary sources. A full ball listing is not reproduced on this page to guarantee accuracy.
Is K4A8G165WB-BCWE suitable for industrial applications?
The K4A8G165WB-BCWE is specified for 0C to +85C operation, which covers most industrial-computing environments such as enclosed controllers and networking equipment. It is not an automotive-grade part; for AEC-Q100-style requirements, use Samsung's automotive DDR4 lines instead. For extended cold environments below 0C, choose an industrial temperature grade variant. Verify your enclosure thermal profile keeps junction temperatures within the +85C commercial ceiling with margin.
What are the key specifications of K4A8G165WB-BCWE that engineers should know?
Key specifications: 8 Gbit DDR4 SDRAM density organized 512M x 16; 3200 Mbps/pin data rate (19 ns access); 1.2V core supply; 96FBGA surface-mount package; 0C to +85C operating range; 8n prefetch DDR4 architecture with on-die termination and self-refresh. These figures come from Samsung datasheet data mirrored on distributor listings. The device targets soldered-down memory subsystems in networking, industrial computing, and consumer electronics rather than DIMM modules.
What power supply design does the K4A8G165WB-BCWE require?
The device requires a 1.2V VDD rail for the core and I/O plus a separate VPP rail (approximately 2.5V in the DDR4 standard) for word-line boosting, per the Samsung DDR4 datasheet. Design the power tree with low-ESR bulk capacitance plus local 100nF decoupling per power ball group, and sequence VPP with VDD per the controller guidance. Budget roughly 20mA-class quiescent per device in standby, rising significantly during active bursts at 3200 Mbps.
What PCB layout considerations apply to K4A8G165WB-BCWE?
Treat the fly-by/daisy-chain or point-to-point routing per your controller topology: length-match DQS-DQ skew within tight per-byte budgets, keep address/command length-matched to clock, and use the ODT settings during read/write training. Reference signals to a solid ground plane, avoid splitting DQ pairs across plane voids, and place the 96FBGA decoupling capacitors on the opposite side directly under the ball field. Run full SI simulation at DDR4-3200, since eye margins shrink noticeably versus 2400 Mbps designs.
Is the K4A8G165WB the same as the K4A8G165WG or K4A8G165WC?
No, they are different die revisions within Samsung's 8Gb x16 DDR4 family: WB (B-die), WC, and WG suffixes denote different internal die generations, but all share the 512M x 16 organization, 1.2V supply, and 96FBGA package with identical ball maps. They are therefore drop-in substitutes at board level. Differences appear in internal timing characteristics and speed-bin availability, so verify that the -BCWE speed grade you need is offered in the specific die-revision suffix you procure.

Engineering reference data for K4A8G165WB-BCWE — comparison, design guidance, and compliance information.

Selection Guide

Choose the K4A8G165WB-BCWE when your memory controller runs at DDR4-3200 and you need an 8Gb x16 soldered-down DRAM with proven B-die silicon. If bandwidth needs are modest (DDR4-2400), the same-footprint K4A8G165WB-BCRC lowers cost with no PCB change. The K4A8G165WB-BCTD and BCPB bins serve as alternate speed grades for controller timing matching or dual-sourcing. If the WB family has allocation lead times, the K4A8G165WC-BCWE and K4A8G165WG-BCWE offer identical density, organization, speed, package, and ball map with newer die revisions - WG-BCWE was in stock at major distributors as of 2026-09-04. Only choose the cross-brand Micron MT40A512M16 option if Samsung allocation fails, and budget a qualification cycle to validate the ball map, timing bins, and initialization behavior on your board.

Comparison with Alternatives

Parameter This Product K4A8G165WB-BCTD K4A8G165WB-BCRC K4A8G165WC-BCWE K4A8G165WG-BCWE MT40A512M16HA-083E:B
Package 96FBGA 96FBGA - same 96FBGA - same 96FBGA - same 96FBGA - same 96-ball FBGA - JEDEC compatible
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology
Density 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb
Organization 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16
Data Rate 3200 Mbps/pin [DATA_NEEDED: exact speed bin] 2400 Mbps-class bin 3200 Mbps/pin 3200 Mbps/pin 2666 Mbps-class (tCK 0.75 ns nominal)
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Operating Temperature 0C to +85C [DATA_NEEDED: temperature grade] [DATA_NEEDED: temperature grade] 0C to +85C 0C to +85C 0C to +85C
Availability (as of 2026-09-04) RFQ / limited stock XAIPART product page XAIPART product page Distributor quote In stock (DigiKey marketplace / LCSC) [DATA_NEEDED]

Key Differentiators

  • Full 3200 Mbps speed grade (vs K4A8G165WB-BCRC)
  • B-die architecture with broad sibling supply (vs K4A8G165WC-BCWE)
  • Supply-chain resilience over cross-brand parts (vs MT40A512M16HA-083E:B)

Design Notes

The device requires a 1.2V VDD rail and a separate VPP rail per the DDR4 standard. Decouple with bulk capacitance (e.g. 47-100 uF per device group) plus 100 nF ceramics placed directly under the 96FBGA ball field on the PCB backside. Estimated: at DDR4-3200 burst currents, per-device peak currents can reach ampere-class transients, so design the VRM with adequate transient response and use a solid power plane rather than trace-level feeding.

At 3200 Mbps/pin, DQ-DQS skew budgets are tight. Length-match each DQ to its DQS pair within controller-specified tolerances, keep address/command matched to CK, and reference all high-speed nets to an unbroken ground plane. Tune on-die termination (ODT) and drive-strength settings during memory training; incorrect ODT is the most common cause of eye-diagram failures at DDR4-3200. Run post-layout SI simulation before tape-out, and re-run training across temperature corners.

Do not interchange speed-bin suffixes (WE/RC/PB/TD) without verifying that your memory controller's programmed CAS latency and tRFC timings match the procured bin - a mismatched bin causes boot failures or intermittent errors. Also confirm die revision (WB vs WC vs WG): the ball map is identical, but internal timing differs slightly. For x16 devices, ensure your controller supports the x16 DQS pair (single differential pair per byte lane pair) and 2x refresh behavior options.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS/REACH statements were not present in the retrieved web data; consult Samsung Semiconductor's official compliance documentation for K4A8G165WB-BCWE declarations.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Samsung Electronics K4A8G165WB-BCWE K4A8G165WB-BCTD K4A8G165WB-BCRC K4A8G165WC-BCWE K4A8G165WG-BCWE MT40A512M16HA-083E:B Micron Technology DDR4 SDRAM DRAM B-die JEDEC DDR4 standard 96FBGA FBGA 512M x 16 organization 3200 Mbps data rate 1.2 V supply RoHS on-die termination (ODT) self-refresh 8n prefetch memory controller training networking line card embedded computing memory
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