K4AAG085WM-BCRC - 32Gb DDR4 SDRAM x8 1.2V | Samsung
MPN: K4AAG085WM-BCRC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1 | $1.00 |
| 10 | $1 | $10.00 |
| 100 | $1 | $100.00 |
| 500 | $1 | $500.00 |
| 1,000 | $1 | $1,000.00 |
Drop-in alternatives for K4AAG085WM-BCRC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4AAG085WM-BCTD
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View Datasheet →K4AAG085WM-BCRC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Organization | x8 |
| Supply Voltage (VDD) | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Max Data Rate | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) |
| Interface | SSTL12 |
| Package | 78-ball FBGA |
| Mounting Type | Surface Mount |
| Architecture | Bank-group DDR4 |
| Termination | On-Die Termination (ODT) |
| Clock | Differential clock CK/CK# |
K4AAG085WM-BCRC 78-ball fbga Pin Configuration Guide
Complete pinout information for K4AAG085WM-BCRC (78-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4AAG085WM-BCRC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4AAG085WM-BCRC is suitable for 6 applications: Server Main Memory (Memory-Down), Embedded Industrial Controllers, Networking Line Cards, FPGA Processing Boards, Desktop and Client Computing, Test and Measurement Instruments.
Server Main Memory (Memory-Down)
Server platforms require large, reliable main-memory arrays with ECC support. The K4AAG085WM-BCRC's x8 organization is the standard width for ECC computation, and its 1.2V supply with DDR4 bank-group architecture matches modern server memory controllers from Intel and AMD. Placed directly on the board (memory-down) in a 78-ball FBGA footprint, it eliminates SO-DIMM/U DIMM connectors, saving height and improving signal integrity for high data rates up to the family's 3200 Mbps/pin. Designers must implement fly-by command/address routing, on-die termination, and controller read/write training to meet DDR4 timing margins at these speeds.
Recommended
Embedded Industrial Controllers
Industrial gateways, PLCs, and edge controllers need dense, low-power DRAM for buffering and local processing. The 1.2V operation of the K4AAG085WM-BCRC reduces memory-subsystem power roughly 25% versus equivalent DDR3 solutions per Samsung's DDR4 page, easing thermal design in sealed fanless enclosures. The 78-ball FBGA surface-mount footprint suits automated assembly on standard industrial PCB processes. Because industrial environments see wide temperature swings, verify the operating temperature range and refresh requirements (including 1x/2x/4x refresh modes supported by DDR4) against the Samsung datasheet for the -BCRC grade before finalizing.
Recommended
Networking Line Cards
Switch, router, and network-appliance line cards use DDR4 SDRAM for packet buffers, flow tables, and control-plane memory. The K4AAG085WM-BCRC's high per-device density minimizes device count on space-constrained line cards, and the x8 bus width allows parallel devices sharing a common fly-by CA bus with individual chip-selects. The family's 3200 Mbps/pin capability supports the bandwidth demanded by multi-gigabit networking data paths. Careful DQS strobe length matching within plus-or-minus 25 mils and ODT configuration are required to close timing at full data rate; Samsung's DDR4 design guide provides the reference topology for these memory-down networks.
Recommended
FPGA Processing Boards
Xilinx/AMD and Intel FPGA boards use hardened DDR4 memory controllers (MIG/EMIF) to attach external DRAM for signal processing, video frame buffers, and acceleration workloads. The K4AAG085WM-BCRC attaches to these hardened PHY blocks through the standard DDR4 interface: differential CK/CK#, CA bus, DQS strobes, and ODT. The 78-ball FBGA x8 part matches the controller's default x8 configuration, simplifying IP setup. Designers must enter the correct speed grade for -BCRC into the memory IP configuration and perform calibration (write leveling, read training) at bring-up; the high density also reduces the number of devices needed per bank group.
Recommended
Desktop and Client Computing
Client desktops and workstations use DDR4 SDRAM in both U DIMM modules and memory-down designs. The K4AAG085WM-BCRC can populate module PCBs or be soldered directly on compact client boards where connector height is restricted. Samsung's DDR4 family delivers up to 3200 Mbps/pin at 1.2V, matching mainstream client memory-controller capability. The x8 organization supports standard ECC-off and ECC-on client configurations alike. For module builders, SPD EEPROM data must be programmed with the -BCRC grade's exact timings so BIOS memory training selects valid CAS latency and tRCD/tRP values per the Samsung datasheet.
Recommended
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and protocol analyzers require fast, deep acquisition memory to capture long signal records at high sample rates. The K4AAG085WM-BCRC provides high per-device density and the DDR4 family's high burst bandwidth, letting instruments stream acquisition data into main memory at multi-GB/s rates. Its 78-ball FBGA footprint allows dense stacking of multiple devices around the acquisition ASIC. Instrument designers must account for refresh-induced latency jitter (tRFC windows) in real-time capture paths, typically using FIFO pre-buffering, and should qualify the -BCRC speed grade's timing table against the instrument's memory controller IP.
Recommended
Recommended Products Summary
Engineering reference data for K4AAG085WM-BCRC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4AAG085WM-BCTD | K4AAG085WA-BCRC | K4AAG085WA-BCWE | K4AAG085WA-BCTD |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Organization | x8 | x8 | x8 | x8 | x8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Speed Grade | -BCRC | -BCTD | -BCRC (same) | -BCWE | -BCTD |
| Density | [DATA_NEEDED: exact density in Gb] | Same K4AAG085WM die | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Termination | On-Die Termination (ODT) | ODT | ODT | ODT | ODT |
Key Differentiators
- Higher per-device density than 8Gb B/C-die parts (vs K4A8G085WC-BCRC)
- x8 organization native to ECC server memory (vs K4AAG165WA-BCRC (x16 variant))
- Multiple same-family speed grades on one footprint (vs K4AAG085WA-BCWE)
Design Notes
DDR4 memory-down layout with the K4AAG085WM-BCRC requires controlled-impedance routing: approximately 40-ohm single-ended DQ/DQS/DM nets and CA nets, with fly-by command/address topology terminated through on-die termination. Keep DQS/DQ length matching within tight skews per Samsung's DDR4 design guide, and place VTT termination with bulk and 0.1uF decoupling capacitors distributed along the CA/DQ nets. The 78-ball FBGA requires via-in-pad or dog-bone escape routing on fine ball pitch; follow IPC and Samsung land-pattern recommendations.
The device operates from 1.2V VDD and 1.2V VDDQ rails; provide separate, well-decoupled supplies or carefully shared planes with sufficient current headroom for simultaneous bank activation bursts. Estimate: peak current depends on density and data rate, so size the VRM using the Samsung datasheet IDD specifications for the -BCRC grade rather than generic family values. Add a VTT terminating rail at 0.6V with fast transient response, since ODT termination current changes abruptly with read/write turnaround.
Do not assume K4AAG (WM die) and K4A8G (B/C die) parts are interchangeable in controller configuration: density, address mapping, and tRFC refresh timing differ between families, and wrong initialization causes silent data corruption. Always program SPD or controller device trees with the exact -BCRC timing table from the current Samsung datasheet revision, and re-run memory training (write leveling, VREF DQ training) at every hardware revision. Samsung reserves the right to change specifications without notice, so re-verify on each new date code.
At data rates approaching the family's 3200 Mbps/pin capability, eye margins shrink rapidly with stub length. Keep DQS/DQ traces short and symmetric, avoid stubs on CA nets, and enable ODT settings (typically RTT_NOM and RTT_WR per the controller's training results) matched to the board topology. Simulate the fly-by CA network with IBIS models from Samsung to confirm monotonic crossing of VIH/VIL at the last device on the bus before committing to PCB fabrication.
Compliance Information
Compliance status for the exact K4AAG085WM-BCRC MPN was not stated in the retrieved web data. Request Samsung environmental compliance certificates via your distributor.
