UCC21521DWR - 5.7kVrms 4A/6A Isolated Dual Gate Driver | TI
MPN: UCC21521DWR ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.18 | $6.18 |
| 10 | $5.65 | $56.50 |
| 25 | $5.43 | $135.75 |
| 100 | $5.14 | $514.00 |
| 1,000 | $4.28 | $4,280.00 |
Drop-in alternatives for UCC21521DWR — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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UCC21521Q-Q1
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View Datasheet →UCC21521DWR Maximum Ratings & Electrical Characteristics
| Isolation Type | Capacitive coupling, reinforced isolation |
| Isolation Voltage | 5700 Vrms |
| Number of Channels | 2 |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Common-Mode Transient Immunity (CMTI) | 100 V/ns (minimum) |
| Propagation Delay (typical) | 19 ns |
| Minimum Input Pulse Width | 10 ns |
| Delay Matching (maximum) | 5 ns |
| Pulse-Width Distortion (maximum) | 6 ns |
| UVLO Threshold | 8 V |
| Maximum Switching Frequency | 5 MHz |
| Operating Temperature | -40C to +125C |
| Package | 16-SOIC (DW), surface mount |
| Input Threshold Compatibility | TTL and CMOS compatible, dual input |
| Enable Pin | Yes (DIS) |
| Programmable Dead Time | Yes |
| RoHS Status | Compliant |
UCC21521DWR 16-soic (dw), surface mount Pin Configuration Guide
Complete pinout information for UCC21521DWR (16-soic (dw), surface mount package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for UCC21521DWR.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
UCC21521DWR is suitable for 6 applications: Industrial Motor Drives, Solar String Inverters, EV Onboard Chargers, Isolated DC-DC Converters, SiC MOSFET Power Stages, Half-Bridge Gate Driving for UPS and Power Backup.
Industrial Motor Drives
In three-phase industrial motor inverters, the UCC21521DWR drives the IGBT or SiC MOSFET half-bridge modules of each phase with 4-A source and 6-A sink peak currents, enabling fast gate transitions that reduce switching losses at PWM frequencies of 10-100 kHz. The 5.7-kV RMS reinforced barrier safely isolates the 3.3-V MCU from the 400-800 V DC bus, and the 100-V/ns CMTI withstands the steep dv/dt at switch nodes, preventing spurious turn-on. Programmable dead time plus 5-ns delay matching keep bridge legs from shooting through, improving inverter efficiency and thermal margin. The DIS enable pin provides a single-line fault shutdown path for overcurrent events.
Recommended
Solar String Inverters
Photovoltaic string inverters use the UCC21521DWR in the boost and DC-AC bridge stages, where the 5.7-kV RMS isolation satisfies galvanic separation between the PV array and grid side. Its 100-V/ns minimum CMTI is essential because the switch node of a SiC boost converter slews extremely fast, and drivers with lower CMTI suffer input glitches that destroy bridge legs. The 19-ns propagation delay and 6-ns pulse-width distortion preserve PWM accuracy at high modulation indices, while 4-A/6-A drive strength supports IGBTs and SiC MOSFETs up to 5 MHz for high-density designs. Operating range of -40C to +125C covers outdoor inverter environments.
Recommended
EV Onboard Chargers
In electric-vehicle onboard chargers (OBC), the UCC21521DWR drives the LLC and PFC power stages that convert grid AC to the high-voltage battery bus. The 5.7-kV RMS reinforced isolation provides the safety barrier required between the AC grid and the vehicle chassis, and the 8-V UVLO ensures the MOSFET gate is fully enhanced before switching begins, protecting against undervoltage-induced linear-mode operation. Because OBC designs push switching frequency to 500 kHz-1 MHz with SiC devices to shrink magnetics, the 10-ns minimum pulse width and 5-MHz capability of the UCC21521 keep timing margins comfortable across the entire operating envelope.
Recommended
Isolated DC-DC Converters
Isolated half-bridge and full-bridge DC-DC converters for telecom and industrial power shelves use the UCC21521DWR to drive primary-side transistors with the 5.7-kV RMS barrier providing reinforced isolation to the output. The dual low-side, dual high-side, or half-bridge configurations let one device cover multiple topologies, simplifying the BOM across power-supply product families. Its 5-ns channel-to-channel delay matching keeps transformer flux balanced in full-bridge designs, and TTL/CMOS-compatible inputs connect directly to 3.3-V PWM controllers without level shifting. The DIS pin enables hiccup-mode fault handling coordinated with the controller.
Recommended
SiC MOSFET Power Stages
Silicon-carbide MOSFET stages in high-power-density converters demand drivers that survive extreme dv/dt; the UCC21521DWR's minimum 100-V/ns CMTI and capacitive isolation are engineered exactly for this environment. The asymmetric 4-A source / 6-A sink current profile lets designers control switching slew via external gate resistors with faster turn-off, reducing switching energy and ringing. The 8-V UVLO matches the recommended 18-V SiC gate-drive rail with a defined threshold, and programmable dead time prevents shoot-through when both devices in a leg switch at 5-MHz-capable speeds. Wide -40C to +125C operation suits SiC's high-temperature advantages.
Recommended
Half-Bridge Gate Driving for UPS and Power Backup
Uninterruptible power supplies and energy-storage converters rely on half-bridge topologies where the UCC21521DWR provides both high-side and low-side drive from a single 16-SOIC package, reducing board area and BOM count. The 5.7-kV RMS isolation isolates the control ground from the floating power switch, and the enable (DIS) pin supports rapid shutdown on inverter fault detection. Timing specs - 19-ns propagation delay and 6-ns pulse-width distortion - preserve output waveform quality at the 20-50 kHz switching frequencies typical of UPS designs, while 6-A sink strength pulls IGBT gates low quickly to minimize tail-current losses during turn-off events.
Recommended
Recommended Products Summary
Engineering reference data for UCC21521DWR — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | UCC21521Q-Q1 | UCC21540QDWKRQ1 | ADUM4223ARWZ | ADUM4137BRWZ |
|---|---|---|---|---|---|
| Package | 16-SOIC (DW) | 16-SOIC (DW) - same | 16-SOIC (DW) - same | SOIC-16 wide body (RW-16) - same footprint class | SOIC-16 wide body (RW-16) - same footprint class |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Analog Devices | Analog Devices |
| Peak Source / Sink Current | 4 A / 6 A | 4 A / 6 A | [DATA_NEEDED] | 4 A / 4 A | 4 A / 4 A (class) |
| Isolation Rating | 5.7 kVrms | 5.7 kVrms | [DATA_NEEDED] | 5 kVrms class | 5 kVrms class |
| CMTI | 100 V/ns (min) | 100 V/ns (min) | 100 V/ns class | 100 V/ns class | 100 V/ns class |
| Propagation Delay (typ) | 19 ns | 19 ns | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Programmable Dead Time | Yes | Yes | Yes (scheme differs) | Fixed / variant dependent | No (external RC) |
| Enable Pin (DIS) | Yes | Yes | Yes | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Grade (AEC-Q100) | No | Yes | Yes | No (standard grade) | No (standard grade) |
Key Differentiators
- Asymmetric 4-A source / 6-A sink drive strength (vs ADUM4223ARWZ)
- Reinforced 5.7-kVrms isolation with 100-V/ns CMTI (vs ADUM4137BRWZ)
- Pin-compatible automotive upgrade path (vs UCC21521Q-Q1)
- Enable (DIS) pin with dual input configuration (vs UCC21520)
Design Notes
Place 0.1-uF and 10-uF ceramic decoupling capacitors within 2 mm of VCCI, VDDA, and VDDB pins, with the ground return tied directly to the respective grounds. The UCC21521's 100-V/ns CMTI spec is only achievable when the input-side ground is quiet; route the input ground away from gate-return paths. Keep the gate loop (driver output, gate resistor, MOSFET gate, source return) as short and wide as possible - parasitic loop inductance of 10 nH or more degrades the 6-A sink capability and causes gate ringing.
When configuring the UCC21521 for half-bridge operation, program dead time per the datasheet dead-time setting table and verify with real switching waveforms at temperature extremes. Shoot-through from insufficient dead time is the most common failure mode in SiC bridges switched above 500 kHz. Also confirm UVLO behavior: the 8-V UVLO on the output supply means gate-drive rails must exceed this before inputs become active, otherwise PWM commands are ignored - a symptom often misdiagnosed as a controller fault.
Estimated: gate-driver dissipation is dominated by gate-charge delivery. For a SiC MOSFET with 100-nC total gate charge at 100 kHz, per-channel drive power is Qg x Vgs x f = 100e-9 x 18 x 1e5 = 0.18 W, times two channels = 0.36 W, plus internal quiescent power. The 16-SOIC DW package with exposed copper area handles this comfortably on a standard 4-layer PCB, but at 1-MHz switching, recalculate - dissipation scales linearly with frequency and may approach 2 W, requiring thermal vias under the package.
The DIS pin is an open fault-clearing input - use it with a comparator or supervisor signal to blank PWM within one switching cycle during overcurrent events. Keep the VCCI input-side trace separated from the OUTA/OUTB gate traces by at least 3 mm to prevent capacitive coupling of 100-V/ns switch-node edges back into the logic side. Per TI's UCC21521 datasheet typical application section, an RC filter on DIS (approximately 1 k-ohm / 1 nF) adds glitch immunity without materially slowing fault response.
Compliance Information
EU RoHS compliant and REACH compliant per Abacus Technologies compliance records. Not AEC-Q100 qualified - use UCC21521Q-Q1 for automotive. Conflict-free status per distributor record (DRC Conflict Free). Halogen-free status not stated in provided data.
