BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon
MPN: BSR802NL6327HTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.38 | $3.80 |
| 100 | $0.28 | $28.00 |
| 500 | $0.22 | $110.00 |
| 1,000 | $0.18 | $180.00 |
| 3,000 | $0.15 | $450.00 |
BSR802NL6327HTSA1 Overview
What is a small-signal MOSFET? A small-signal power MOSFET is a metal-oxide-semiconductor field-effect transistor designed for low-to-medium current switching applications. It belongs to the broader discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor. These devices serve as the workhorses of low-voltage power conversion, providing fast switching, low on-resistance, and minimal gate drive requirements compared to bipolar transistors.
Key features include a maximum drain-source voltage of 20 V, continuous drain current of 3.7 A at TA=25C, and an ultra-low typical on-resistance of 23 mOhm at VGS=4.5 V. The OptiMOS 2 process delivers excellent switching performance with low gate charge and low reverse recovery charge, making it well suited for high-frequency DC-DC converter and load-switch topologies. The device is qualified to automotive standards and operates across the industrial -55C to +150C junction temperature range.
The BSR802N uses Infineon's advanced trench MOSFET cell architecture to minimize conduction and switching losses simultaneously. The SC-59 (SOT-346) footprint is a low-profile SMD package widely used where board space is at a premium, offering a thermal pad connection for moderate heat-sinking via copper pours.
Typical applications include DC-DC converter primary-side switching, load switches in battery-powered portable devices, power management modules in notebooks and tablets, USB power distribution, and motor drive low-side switches in small actuators. The automotive qualification makes it suitable for body electronics, infotainment, and ADAS peripheral rails.
When designing with this part, ensure that VGS is driven to 4.5 V or higher for full enhancement and minimum Rds(on). The PG-SC59-3 package has limited thermal dissipation (500 mW at TA=25C), so for continuous high-current operation above 2 A, a substantial copper area on the PCB is required to maintain junction temperature within safe limits.
This page synthesizes distributor pricing, drop-in alternatives from Infineon's OptiMOS portfolio and competitor offerings, and practical PCB layout guidance not found in the manufacturer datasheet alone.
Drop-in alternatives for BSR802NL6327HTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSR802NL6327HTSA1 (same form factor and footprint) — differing in Package, Technology, MSL Level, Operating Temperature Range, FET Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSR802NL6327
✅ Drop-In📋 Reference alternative (not in catalog)
BSD235CH6327XTSA1
✅ Drop-In✓ In Stock
$0.12 / Unit
View Datasheet →BSS205NH6327XTSA1
✅ Drop-In✓ In Stock
$0.12 / Unit
View Datasheet →BSP316PH6327XTSA1
✅ Drop-In✓ In Stock
$0.21 / Unit
View Datasheet →BSP315PH6327XTSA1
✅ Drop-In✓ In Stock
$0.31 / Unit
View Datasheet →IRLML2060TRPBF
✅ Drop-In✓ In Stock
$0.13 / Unit
View Datasheet →BSR802NL6327HTSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSR802NL6327HTSA1 |
| Technology | OptiMOS 2 (N-Channel Trench MOSFET) |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) max | 20 V |
| Continuous Drain Current (ID) max | 3.7 A (Ta=25C) |
| Power Dissipation (PD) max | 500 mW (Ta=25C) |
| On-Resistance (RDS(on)) typ | 23 mOhm @ VGS=4.5 V |
| Package | PG-SC59-3 (SC-59 / SOT-346) |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55C to +150C |
| Qualification | Automotive |
| RoHS Status | Compliant |
| Pin Count | 3 |
BSR802NL6327HTSA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate control input (drive to 4.5 V or higher for full enhancement) |
| Pin 2 | Source — MOSFET source terminal (connected to circuit ground for low-side switching) |
| Pin 3 | Drain — MOSFET drain terminal (connected to load for low-side switching) |
Safe Operating Area - BSR802N (PG-SC59-3)
Typical Applications
BSR802NL6327HTSA1 is suitable for 6 applications: DC-DC Converter Primary-Side Switching, Load Switch in Battery-Powered Portable Devices, USB Power Distribution Switch, Low-Side Motor Drive for Small Actuators, Automotive Body Electronics Power Rail, Reverse Polarity Protection Circuit.
DC-DC Converter Primary-Side Switching
The BSR802NL6327HTSA1's 23 mOhm RDS(on) at 4.5 V VGS and 20 V VDS rating make it ideal for primary-side switching in low-voltage buck converters. In a 3.3 V or 5 V output buck topology, the part's low gate charge (from Infineon's OptiMOS 2 process) minimizes switching losses at 500 kHz to 2 MHz switching frequencies. Compared to bipolar transistors, the BSR802N provides faster switching edges and eliminates base-drive current, simplifying the gate driver design. The 500 mW dissipation in SC-59 is adequate for converters delivering up to 1.5 A continuous load on a 2-layer PCB with proper copper pours.
Recommended
Load Switch in Battery-Powered Portable Devices
The BSR802NL6327HTSA1 is well-suited as a load switch in smartphones, tablets, and wearables where board area is at a premium. With RDS(on) of 23 mOhm at 4.5 V VGS, voltage drop across the switch is just 46 mV at 2 A load - acceptable for sub-1 V rail cutoff applications. The SC-59 footprint (3 mm x 2.8 mm) consumes minimal PCB real estate. The OptiMOS 2 process ensures low leakage (under 1 uA typical) so the part does not drain the battery in sleep modes, a critical parameter for always-connected IoT devices.
Recommended
USB Power Distribution Switch
For USB 2.0/3.0 VBUS power switching at 5 V, the BSR802NL6327HTSA1's 20 V VDS rating provides 4x safety margin over the 5 V rail. The 3.7 A continuous current rating exceeds the USB 3.0 900 mA requirement with margin for inrush events during device enumeration. The Infineon datasheet's switching speed figures enable fast short-circuit response (<1 us), critical for USB fault protection. Pair with a hot-swap controller for full USB power delivery compliance.
Recommended
Low-Side Motor Drive for Small Actuators
The BSR802NL6327HTSA1 can drive small DC motors, solenoids, and valve actuators in the sub-3 A range. As a low-side switch, it connects the load to ground while the high side is tied to a fixed supply rail. The 20 V VDS accommodates 12 V automotive supplies with 8 V transient margin. PWM switching frequencies up to 25 kHz are supported, covering the audible-noise avoidance range for automotive body electronics such as window lifters and seat adjusters.
Recommended
Automotive Body Electronics Power Rail
With automotive qualification per the Infineon BSR802N product page, the BSR802NL6327HTSA1 is suitable for body control modules, instrument clusters, and infotainment power rails. The part operates reliably across -40C to +125C ambient (junction rating to 150C), covering under-hood and cabin environments. It is commonly used to switch 12 V loads such as interior lighting, mirror heaters, and sensor power rails in BCM designs.
Recommended
Reverse Polarity Protection Circuit
The BSR802NL6327HTSA1 can serve as a low-side reverse-polarity protection MOSFET when wired in reverse (drain to system ground, source to battery negative). On reverse battery connection, the body diode becomes reverse-biased and protects downstream circuitry. The 23 mOhm RDS(on) ensures minimal voltage drop in normal operation, and the 20 V VDS is more than adequate for 12 V automotive systems. This topology is widely used in automotive ECUs and industrial PLCs.
Recommended
Recommended Products Summary
Engineering reference data for BSR802NL6327HTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSR802NL6327 | BSD235CH6327XTSA1 | BSS205NH6327XTSA1 | BSP316PH6327XTSA1 | IRLML2060TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-SC59-3 | PG-SC59-3 - same | PG-SC59-3 - same | PG-SC59-3 - same | PG-SC59-3 - same | SOT-23-3 - pin-compatible footprint |
| Channel Type | N-Channel | N-Channel | N+P dual | N-Channel | P-Channel | N-Channel |
| VDS max | 20 V | 20 V | 20 V | 20 V | 100 V (P-ch) | 60 V |
| Qualification | Automotive (AEC-Q101) | Industrial | Automotive | Automotive | Automotive | Industrial |
| Unit Price (qty 1000, USD) | 0.18 | 0.16 | 0.22 | 0.20 | 0.24 | 0.19 |
Key Differentiators
- Automotive-qualified with low RDS(on) in SC-59 (vs BSR802NL6327)
- Single N-channel vs dual MOSFET (vs BSD235CH6327XTSA1)
- Lower VDS vs higher voltage alternatives (vs IRLML2060TRPBF)
Design Notes
The PG-SC59-3 package is rated 500 mW at TA=25C, corresponding to a thermal resistance of approximately 250 C/W junction-to-ambient on a standard 2-layer JEDEC test board. Estimated: at 3.7 A load with VIN=12V and VOUT=5V, conduction loss alone (I^2 x RDS(on) = 3.7^2 x 0.023 = 0.31 W) is within the package rating, but switching losses at >500 kHz add substantially. For continuous operation above 2 A, use a 1 oz copper pour of at least 100 mm^2 connected to the drain pin to reduce junction temperature by 30-50C.
Place the BSR802NL6327HTSA1 with the drain pad on the largest available copper pour to maximize heat spreading. The SC-59 package has the drain on pin 3, so route the high-current trace directly to pin 3 with a wide trace (>=0.5 mm per amp). Add thermal vias (0.3 mm drill, 1 mm pitch) under the drain pad to inner copper layers. Keep gate drive traces short and away from the drain node to minimize parasitic feedback that can cause ringing and false triggering.
Do not drive the gate below the VGS(th) threshold (typically 0.7-1.5 V per Infineon's OptiMOS 2 family), or the MOSFET will operate in the linear region with high dissipation and possible thermal runaway. For low-voltage logic-level driving from a 3.3 V MCU GPIO, ensure VGS reaches at least 4.5 V at the IC pin after accounting for any voltage drop in the gate drive path. Also avoid exceeding the absolute maximum VGS of +/-12 V which can permanently damage the gate oxide.
Compliance Information
AEC-Q101 qualified per Infineon BSR802N product page automotive qualification designation. RoHS compliant (HTSA1 suffix denotes Pb-free automotive). REACH and conflict minerals compliance per Infineon's published declarations.
