IDD03SG60CXTMA2 - 600V 3A SiC Schottky Diode | Infineon
MPN: IDD03SG60CXTMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.31 | $131.00 |
| 500 | $1.04 | $520.00 |
| 1,000 | $0.86 | $860.00 |
IDD03SG60CXTMA2 Overview
A Schottky diode is a unipolar semiconductor device that conducts current through a metal-semiconductor junction rather than a P-N junction, which eliminates minority-carrier storage and therefore removes reverse-recovery losses. SiC (silicon-carbide) as a wide-bandgap material extends Schottky performance into higher voltage, higher temperature, and higher switching-frequency regimes where conventional silicon diodes fail. In the broader taxonomy this part belongs to: Schottky diode → rectifier diode → diode → discrete semiconductor → power semiconductor.
Key specifications include a typical forward voltage of 1.5 V at 3 A, a maximum operating junction temperature of 175 °C, and the industry’s lowest device capacitance for any given current rating per the manufacturer, which reduces switching losses and improves light-load efficiency. The PG-TO252-3 (DPAK) package supports tab-cathode mounting for low thermal resistance.
The third-generation thinQ!™ SiC die delivers a near-ideal figure-of-merit (Qc × VF) trade-off, with capacitive charge (Qc) optimized for converters above 100 kHz. The merged-PiN-Schottky (MPS) structure suppresses bipolar degradation under surge events, ensuring robust avalanche capability.
Typical applications include server and telecom switch-mode power supplies (SMPS), solar inverters, on-board EV chargers, industrial motor drives, and uninterruptible power supplies (UPS). The 600 V rating provides ample margin for 380-400 V PFC boost stages fed from universal-input rectifiers.
When designing with this diode, ensure the snubber and thermal copper pour are sized for the expected switching frequency. Compared with silicon ultrafast rectifiers, the SiC part eliminates reverse-recovery losses but requires careful gate-driver and EMI mitigation on the switching stage it services.
This page consolidates distributor pricing, drop-in alternatives, and design notes not found in the manufacturer datasheet alone, giving engineers a single source for cross-brand equivalent selection and practical PCB-layout guidance.
Drop-in alternatives for IDD03SG60CXTMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IDD03SG60C
✅ Drop-In📋 Reference alternative (not in catalog)
IDD05SG60CXTMA2
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
FFSM3065A
✅ Drop-In📋 Reference alternative (not in catalog)
STPSC3H065D
✅ Drop-In📋 Reference alternative (not in catalog)
C3D03065E
✅ Drop-In📋 Reference alternative (not in catalog)
IDD03SG60CXTMA2 Maximum Ratings & Electrical Characteristics
| Diode Type | Silicon Carbide (SiC) Schottky |
| Generation | 3rd Generation thinQ!™ SiC |
| Repetitive Peak Reverse Voltage (VRRM) | 600 V |
| Average Forward Current (IF(AV)) | 3 A |
| Forward Voltage (VF) typ at IF=3A | 1.5 V |
| Reverse Recovery Charge (Qrr) | 0 nC (zero reverse recovery) |
| Junction Temperature Range | -55 °C to +175 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Configuration | Single Diode |
| RoHS Status | Compliant |
| Halogen-Free | Yes (per Infineon product page) |
IDD03SG60CXTMA2 Pin Configuration
| Pin 1 | K (Cathode) — Cathode terminal — connected to positive DC-link side |
| Pin 2 | A (Anode) — Anode terminal — connected to switching node |
| Pin 3 | NC — Not connected (per Infineon DPAK pinout convention) |
| Pin 4 | A (Tab) — Anode terminal — main thermal pad and current path, connected to pin 2 |
Typical Applications
IDD03SG60CXTMA2 is suitable for 7 applications: Bridgeless Totem-Pole PFC, Server and Telecom SMPS, Solar String Inverters, On-Board EV Chargers, Industrial Motor Drives, Uninterruptible Power Supplies (UPS), EV Charging Station DC Fast Chargers.
Bridgeless Totem-Pole PFC
The IDD03SG60CXTMA2 is purpose-built for bridgeless totem-pole PFC stages in 1–3 kW SMPS. Its zero reverse-recovery charge (Qrr = 0 nC) eliminates the diode switching losses that dominate silicon-diode PFC efficiency above 100 kHz, enabling 99% peak efficiency when paired with GaN HEMT switches in the slow leg. The 600 V VRRM rating provides ample margin for 380–400 V DC-link operation from universal-input rectifiers. At 3 A average forward current, this diode matches a 1.5 kW PFC stage at 400 V output, and the DPAK tab enables direct PCB copper-pour heatsinking without a separate heatsink, keeping the BOM compact for server and telecom PSU designs.
Recommended
Server and Telecom SMPS
In server and telecom switch-mode power supplies, the IDD03SG60CXTMA2 serves as the PFC boost diode in 80 PLUS Titanium-compliant designs. The 600 V SiC Schottky removes reverse-recovery-induced EMI that would otherwise require bulky snubbers, simplifying the input EMI filter and reducing PCB area. With a 175 °C maximum junction temperature and low capacitive charge, the diode sustains high-frequency switching (typically 65–130 kHz in modern server PSUs) with minimal switching loss. The DPAK footprint allows direct heatsink tab mounting, supporting 1U and 2U form-factor PSU designs where thermal density is critical.
Recommended
Solar String Inverters
Solar string inverters benefit from the IDD03SG60CXTMA2’s high-efficiency switching in the boost PFC stage that elevates the panel DC bus to the grid-tie inverter’s DC link voltage. The SiC diode’s negligible reverse-recovery loss cuts switching losses by 60–70% versus a comparable silicon ultrafast rectifier, directly improving CEC-weighted inverter efficiency by 0.3–0.5%. Its 175 °C junction rating supports outdoor enclosure operation where ambient temperatures can exceed 70 °C. The 600 V rating comfortably handles 600 V DC-link strings from 1500 V DC-panel arrays with appropriate derating.
Recommended
On-Board EV Chargers
In on-board EV chargers (OBC) operating at 6.6–22 kW, the IDD03SG60CXTMA2 functions as the boost diode in the bridgeless PFC front-end and as the secondary-side rectifier in the DC-DC isolation stage. The SiC die’s high temperature tolerance and 600 V blocking voltage withstand the harsh automotive under-hood thermal environment and meet the AEC-Q101-equivalent reliability profile expected by Tier-1 automotive suppliers. Zero reverse recovery enables switching frequencies up to 250 kHz, shrinking the OBC’s magnetics and improving power density beyond the 4 kW/L benchmark targeted by modern EV platforms.
Recommended
Industrial Motor Drives
Industrial variable-frequency drives (VFDs) for motors up to 5 kW use the IDD03SG60CXTMA2 as the input bridge rectifier and PFC boost diode. The 600 V rating handles rectified 480 V three-phase industrial mains with adequate transient margin, and the SiC Schottky reduces input harmonic distortion and thermal stress versus a silicon diode bridge, often eliminating the need for active power-factor correction. The DPAK package supports PCB-mount heatsinking through a copper pour, simplifying the mechanical assembly of IP20-rated drive enclosures used in factory automation panels.
Recommended
Uninterruptible Power Supplies (UPS)
In online double-conversion UPS systems, the IDD03SG60CXTMA2 serves in both the PFC front-end and the inverter output rectifier stages. The SiC Schottky’s zero reverse recovery dramatically reduces switching losses in the high-frequency inverter bridge, allowing UPS designers to push switching frequency higher and shrink the output filter inductors and capacitors. This directly improves the UPS’s power density and reduces total harmonic distortion (THD) on the inverter output. The 600 V / 3 A rating fits 3 kVA single-phase UPS architectures where efficiency above 96% is required for ECO-mode operation.
Recommended
EV Charging Station DC Fast Chargers
In 50–150 kW DC fast charging stations, the IDD03SG60CXTMA2 functions inside the auxiliary PFC and auxiliary power modules that power cooling, control, and communications. While the main rectification uses larger SiC modules, this 3 A DPAK part is ideal for the auxiliary supplies where its small footprint and zero-recovery switching translate into a compact, efficient bias supply design. The 600 V blocking voltage and 175 °C junction temperature match the demanding thermal profile of outdoor charging stations subject to direct sunlight and high ambient temperatures.
Recommended
Recommended Products Summary
Engineering reference data for IDD03SG60CXTMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IDD03SG60C | IDD05SG60CXTMA2 | FFSM3065A | STPSC3H065D | C3D03065E |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | DPAK - same | DPAK - same | DPAK - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics | Wolfspeed |
| Repetitive Peak Reverse Voltage (VRRM) | 600 V | 600 V | 600 V | 650 V | 650 V | 650 V |
| Average Forward Current (IF(AV)) | 3 A | 3 A | 5 A | 3 A | 3 A | 3 A |
| Forward Voltage (VF typ) | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
| Reverse Recovery Charge (Qrr) | 0 nC | 0 nC | 0 nC | 0 nC | 0 nC | 0 nC |
| Junction Temperature Range | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -40 °C to +175 °C | -55 °C to +175 °C |
| Technology | 3rd-Gen thinQ! SiC Schottky | 3rd-Gen thinQ! SiC Schottky | 3rd-Gen thinQ! SiC Schottky | onsemi SiC Schottky | ST 3rd-Gen SiC Schottky | Wolfspeed Z-Rec SiC Schottky |
Key Differentiators
- Lowest device capacitance for any given current rating (vs FFSM3065A (onsemi))
- Higher junction temperature rating than competitors (vs STPSC3H065D (STMicroelectronics))
- Same-die higher-current upgrade path (vs IDD03SG60C (same family))
Design Notes
Estimated: at IF(AV)=3 A and VF=1.5 V, conduction loss is approximately 4.5 W in continuous conduction. The DPAK package thermal resistance (RthJA) of approximately 50 °C/W on a 1 sq. inch copper pour yields a junction-temperature rise of 225 °C above ambient — exceeding the 175 °C rating. Reduce average current to 2 A or expand the copper pour to 2 sq. inches for reliable operation at full 3 A load. Add thermal vias under the tab for improved heat-spreading.
Use a minimum 1 sq. inch copper pour on the cathode-side PCB layer for tab heatsinking, with an array of thermal vias (0.3 mm drill, 1.2 mm pitch) to inner copper planes. Place the diode’s anode and cathode traces with short, wide PCB traces (≥ 2 mm wide per ampere) to minimize parasitic inductance. For switching frequencies above 100 kHz, use a Kelvin-grounded source-sense layout for the companion switching MOSFET to prevent ringing at the SiC diode’s switching node.
Keep the SiC diode’s switching-node trace away from sensitive analog feedback traces to avoid capacitive coupling of high dv/dt edges (typically 5–20 V/ns for SiC). Use a ground plane under the diode and surrounding circuitry to provide a low-impedance return path. Place a small RC snubber (10 Ω + 100 pF) across the diode if the measured ringing amplitude exceeds 20% of the DC-link voltage, especially at switching frequencies above 200 kHz.
Do not exceed 600 V VRRM including switching transients — overshoot on the DC-link during load steps can exceed this rating if the snubber is undersized. Verify that the gate driver for the companion switching MOSFET provides sufficient margin; SiC diodes expose the switch to full reverse recovery voltage during turn-on, unlike silicon diodes where commutation is gradual. Also, derate for altitude: at >2000 m, the reduced air density lowers the heatsink-to-ambient thermal resistance, requiring additional copper area.
Compliance Information
RoHS compliant per Infineon product page. Halogen-free. Not AEC-Q100 qualified — this is a commercial/industrial part. For AEC-Q101 automotive-grade equivalents, consider IDH03SG60C (Infineon automotive SiC Schottky).
