IPB45N06S4L08ATMA3 - 60V 45A OptiMOS-T2 N-Channel MOSFET | Infineon
MPN: IPB45N06S4L08ATMA3 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.9 | $0.90 |
| 10 | $0.82 | $8.20 |
| 100 | $0.68 | $68.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.47 | $470.00 |
| 3,000 | $0.39 | $1,170.00 |
IPB45N06S4L08ATMA3 Overview
An N-channel MOSFET is a voltage-controlled semiconductor switch where a positive gate-source voltage creates an inversion layer that conducts current between drain and source. The OptiMOS-T2 family represents Infineon's mid-voltage (40V-300V) trench MOSFET product line within the broader power-MOSFET taxonomy: trench MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor. Compared to older planar MOSFETs, trench technology achieves much lower on-resistance per unit silicon area, reducing conduction losses and shrinking die/package size.
Key features include a maximum on-resistance of 7.9 mΩ (RDS(on) at VGS=10V), low switching and conduction losses for high thermal efficiency, AEC-Q101 automotive qualification, 100% avalanche-tested ruggedness, MSL1 moisture sensitivity rating up to 260°C peak reflow, and a 175°C maximum operating junction temperature. The part is also a Green Product, fully RoHS compliant, and ships on tape and reel for high-volume SMT assembly lines.
The 7.9 mΩ RDS(on) figure translates directly into conduction loss: at 20A continuous load the device dissipates roughly P = I² x R = 20² x 0.0079 ≈ 3.2W, manageable on the D2PAK copper pad. The OptiMOS-T2 cell design also keeps gate charge low, enabling faster switching transitions and reduced driver losses in high-frequency PWM stages.
Typical applications include automotive 12V/24V load switching (valves, solenoids, lighting control), DC-DC converter primary-side switches, motor drive H-bridges, hot-swap controllers, and battery management protection FETs. The AEC-Q101 qualification and 175°C junction rating make it especially suitable for under-hood and industrial environments where ambient temperatures regularly exceed 125°C.
When designing with this part, ensure the PCB copper pad provides at least 1 square inch of 2oz copper to keep the junction below 175°C at full load. A gate drive voltage of 10V (VGS) is needed to achieve the datasheet 7.9 mΩ RDS(on); logic-level gate drive (5V) will yield a significantly higher on-resistance and is not recommended.
This page synthesizes distributor pricing, drop-in alternatives and practical design notes not found on the manufacturer datasheet alone - see the FAQ and design_notes sections below for actionable engineering guidance.
Drop-in alternatives for IPB45N06S4L08ATMA3 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB45N06S4L08ATMA3 (same form factor and footprint) — differing in Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB45N06S4L-08
✅ Drop-In📋 Reference alternative (not in catalog)
IPB110P06LMATMA1
✅ Drop-In✓ In Stock
$1.31 / Unit
View Datasheet →IPB45N06S4L08ATMA3 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-T2 |
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, TC=25C) | 45 A |
| On-Resistance RDS(on) max @ VGS=10V | 7.9 mOhm |
| Power Dissipation (TC=25C) | 71 W |
| Operating Junction Temperature | -55C to +175C |
| Gate Threshold Voltage VGS(th) | 1.2 V to 2.4 V (typ 1.7 V) |
| Package | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (260C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche Tested | 100% avalanche tested |
| RoHS Compliance | Yes (Green Product) |
| Lead-Free | Yes |
| Halogen-Free | Yes |
IPB45N06S4L08ATMA3 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input (VGS) |
| Pin 2 | Drain — MOSFET drain (also connected to metal tab) |
| Pin 3 | Source — MOSFET source terminal |
| Pin TAB | Drain — Metal tab - electrically connected to Drain (pin 2), serves as thermal pad for PCB mounting |
Safe Operating Area (DC)
Typical Applications
IPB45N06S4L08ATMA3 is suitable for 7 applications: Automotive 12V/24V Load Switching, DC-DC Converter Primary-Side Switch, Brushless DC (BLDC) Motor Drive H-Bridge, Hot-Swap Controller Protection FET, Battery Management Protection FET, LED Lighting Driver Switch, Industrial Solenoid and Valve Control.
Automotive 12V/24V Load Switching
The IPB45N06S4L08ATMA3 is purpose-built for automotive 12V and 24V load-switching roles such as driving solenoid valves, headlamp modules, and body-control relays. Its 7.9 mOhm RDS(on) at VGS=10V keeps conduction loss around 0.5W at 8A continuous, well below the 71W package rating even without active cooling. The AEC-Q101 qualification and 175C max junction temperature allow placement near engine compartments where ambient temperatures reach 125C. Recommended companion parts include the Infineon TLE94104EPXUMA1 multi-channel half-bridge driver for sequenced relay control.
Recommended
DC-DC Converter Primary-Side Switch
In 12V-to-low-voltage buck converters used in industrial point-of-load applications, the IPB45N06S4L08ATMA3 serves as the primary-side high-side MOSFET with its 60V VDS rating providing ample margin above the 24V industrial bus maximum. The 7.9 mOhm RDS(on) and moderate gate charge make it efficient at switching frequencies from 50 kHz to 200 kHz, where conduction and switching losses are balanced. For higher-frequency designs above 300 kHz, consider OptiMOS-T2 parts with lower Qg instead.
Recommended
Brushless DC (BLDC) Motor Drive H-Bridge
The IPB45N06S4L08ATMA3 is well suited for the low-side and high-side positions of an H-bridge driving small BLDC motors in automotive HVAC blowers, water pumps and e-bike traction systems. Its 45A continuous rating covers inrush currents during motor startup, while the 7.9 mOhm RDS(on) keeps per-FET conduction loss manageable. For three-phase BLDC drives requiring six switches, the part pairs naturally with the IRSM808-105MH integrated half-bridge module for compact designs.
Recommended
Hot-Swap Controller Protection FET
In 12V/24V hot-swap and inrush-current-limiting circuits for plug-in cards and battery-management modules, the IPB45N06S4L08ATMA3 acts as the series protection element. Its 100% avalanche-tested ruggedness allows it to absorb the energy of an inserted card's bulk-capacitor charging transient without failure. The 7.9 mOhm RDS(on) introduces only 80mV drop at 10A continuous load, preserving downstream voltage headroom during normal operation.
Recommended
Battery Management Protection FET
Within lithium-ion battery packs and 12V/24V lead-acid battery management systems, the IPB45N06S4L08ATMA3 serves as the charge/discharge disconnect FET. Its 60V VDS rating covers the maximum transient voltages seen in automotive 24V jump-start events, while the 7.9 mOhm RDS(on) keeps the always-on conduction loss low. The AEC-Q101 qualification and -55C to +175C operating range cover both under-hood and outdoor EV-charging cabinet environments.
Recommended
LED Lighting Driver Switch
In high-brightness automotive LED headlamp and industrial high-bay lighting drivers, the IPB45N06S4L08ATMA3 functions as the buck-converter high-side switch. The 7.9 mOhm RDS(on) at 60V VDS provides sufficient margin for 24V industrial bus applications while keeping thermal dissipation low. Its 175C junction rating and AEC-Q101 qualification make it directly usable in exterior automotive lighting where temperatures under the headlamp lens reach 120C+.
Recommended
Industrial Solenoid and Valve Control
The IPB45N06S4L08ATMA3 is widely used to switch 24V industrial solenoid valves, hydraulic actuators and pneumatic valves in factory automation systems. Its 45A continuous current rating exceeds the inrush of most industrial solenoids, while the 60V VDS handles inductive flyback transients when paired with a freewheeling diode. The 100% avalanche rating provides additional robustness against the inductive kickback that occurs when the solenoid is de-energized.
Recommended
Recommended Products Summary
Engineering reference data for IPB45N06S4L08ATMA3 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB45N06S4L-08 | IPB110P06LMATMA1 | IPD50N06S409ATMA2 | IRFB7545PBF | IPP075N15N3GXKSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO252-3-1 (DPAK) - different | TO-220AB - different | PG-TO220-3 - different |
| Drain-Source Voltage VDS | 60 V | 60 V | 60 V | 60 V | 60 V | 150 V |
| Continuous Drain Current ID | 45 A | 45 A | 36 A | 50 A | 50 A | 37 A |
| On-Resistance RDS(on) @ 10V | 7.9 mOhm | 7.9 mOhm | 11 mOhm (P-channel) | 10 mOhm | 9.7 mOhm | 7.5 mOhm |
| Channel Polarity | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel | N-Channel |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Operating Junction Temp | 175 C | 175 C | 175 C | 175 C | 175 C | 175 C |
| Power Dissipation TC=25C | 71 W | 71 W | 65 W | 50 W (DPAK) | 94 W (TO-220) | 83 W (TO-220) |
| Approx Unit Price (qty 1, as of 2026-09-15) | $0.90 | $0.85 (base, no reel) | $1.05 | $0.75 | $1.20 | $1.85 |
Key Differentiators
- Lowest RDS(on) in the Infineon 60V OptiMOS-T2 D2PAK family (vs IPB110P06LMATMA1)
- AEC-Q101 qualified with 175C max junction temperature (vs IPD50N06S409ATMA2 (DPAK))
- 100% avalanche tested for inductive switching robustness (vs IPP075N15N3GXKSA1)
Design Notes
Estimated: at VIN=24V, VOUT=12V, and 20A continuous load, the IPB45N06S4L08ATMA3 dissipates approximately (24-12) x 20 = 240W during switching transients, with average conduction loss of 20^2 x 0.0079 = 3.2W. The D2PAK package's thermal resistance from junction to case is roughly 1 C/W, so junction-to-case temperature rise at 3.2W is only ~3.2C. However, junction-to-ambient depends strongly on PCB copper: with 1 sq inch of 2oz copper on the drain tab, RthJA is approximately 50 C/W, yielding 160C junction rise above ambient - so heatsinking or larger copper area is required for sustained high-current operation. Add a thermal via array under the tab to the bottom-side copper pour for best results.
Route the gate drive trace as a short, wide path directly from the gate-driver output to pin 1, keeping loop area under 1 cm^2 to minimize parasitic inductance. The source pin (pin 3) should be the reference ground for the gate-driver; if using a kelvin-source package variant, connect pin 3 to the power-ground plane and the kelvin pin to the gate-driver ground. Place a 100nF ceramic bypass capacitor on the gate-driver supply within 5mm of the driver IC. The drain tab requires a copper area of at least 1 square inch on the top layer, with thermal vias (0.3mm diameter, 1mm pitch) connecting to the bottom copper pour for double-sided cooling.
Do NOT drive this MOSFET with a logic-level 5V gate signal expecting the datasheet 7.9 mOhm RDS(on) - at VGS=5V the on-resistance is significantly higher (typically 12-15 mOhm), leading to excessive conduction loss and thermal runaway. Use a gate driver that supplies at least 10V VGS for full RDS(on) specification. Additionally, do not exceed the avalanche energy rating (EAS) specified in the datasheet during inductive switching - while the part is 100% avalanche tested for single-pulse events, repetitive avalanche operation degrades the device over time. Always add a freewheeling diode across inductive loads (valves, solenoids, motors) to redirect flyback energy.
Keep the high-current drain-source loop area as small as possible to minimize parasitic inductance that causes voltage overshoot during switching transients. For a buck converter using this part as the high-side switch, place the input decoupling capacitor (typically 10uF ceramic + 100uF electrolytic) within 5mm of the drain pin and source pin return. The gate-drive loop should be physically separated from the power loop to avoid capacitive coupling that can cause false triggering. Use a ground plane on layer 2 (immediately below the top-side power loop) to provide a low-impedance return path and additional thermal spreading.
Compliance Information
AEC-Q101 qualified per Infineon datasheet (automotive grade, distinct from AEC-Q100 but referenced for automotive MOSFETs). MSL1 rated up to 260C peak reflow. 100% avalanche tested. Green Product designation confirms RoHS and halogen-free compliance.
