EP3SE80F780C2N - Stratix III E FPGA, 80K LE, 780-FCBGA | Intel / Altera
MPN: EP3SE80F780C2N ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1850 | $1,850.00 |
| 10 | $1690 | $16,900.00 |
| 100 | $1495 | $149,500.00 |
| 500 | $1320 | $660,000.00 |
| 1,000 | $1180 | $1,180,000.00 |
EP3SE80F780C2N Overview
An FPGA (Field-Programmable Gate Array) is a semiconductor integrated circuit composed of configurable logic blocks (CLBs), programmable interconnect, and dedicated silicon IP such as block RAM, DSP slices, PLLs, and high-speed transceivers. FPGAs sit in the broader taxonomy of programmable logic devices (PLD), distinct from ASICs because they can be reconfigured in the field after manufacture. Stratix III E belongs to the high-performance tier of FPGAs optimized for DSP, signal processing, and communications infrastructure.
Key features of the EP3SE80F780C2N include 80K logic elements, 488 user I/Os, 6.84 Mbits of embedded memory (M9K/M144K blocks), 384 18x18 multipliers, integrated transceiver capability, and 3200 LABs. The 65 nm low-power process enables lower static power consumption versus prior Stratix generations, while the 780-ball FCBGA package offers high I/O density with flip-chip thermal performance.
The architecture combines Adaptive Logic Modules (ALMs), tri-matrix memory blocks, and DSP blocks for high-bandwidth parallel arithmetic. Memory interfaces up to DDR3 and high-speed serial transceivers enable line-card, baseband, and high-performance DSP designs. The C2 speed grade balances performance and power for industrial and communications applications.
Typical applications include high-speed networking line cards, baseband processing in wireless infrastructure, DSP acceleration in test and measurement equipment, ASIC prototyping, and high-speed serial protocol bridging. The 488 I/Os and abundant logic support multi-channel parallel interfaces.
When designing with this device, ensure the PCB has matched-impedance routing for transceiver lanes and adequate via-in-pad or microvia technology for the FC-FBGA breakout. Thermal management via heatsink or airflow is essential at full transceiver utilization due to the flip-chip power density.
This page synthesizes distributor pricing, Stratix III E cross-reference alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone.
Drop-in alternatives for EP3SE80F780C2N — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with EP3SE80F780C2N (same form factor and footprint) — differing in Package, Speed Grade, Operating Temperature, Logic Array Blocks (LABs), Embedded Memory.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
EP3SE80F780C3N
✅ Drop-In✓ In Stock
$1410 / Unit
View Datasheet →EP3SE80F780C4N
✅ Drop-In✓ In Stock
$1290 / Unit
View Datasheet →EP3SE80F780C2
✅ Drop-In✓ In Stock
$2480 / Unit
View Datasheet →EP3SE110F780C2N
✅ Drop-In✓ In Stock
$305 / Unit
View Datasheet →EP3SE110F780C3N
✅ Drop-In✓ In Stock
$1245 / Unit
View Datasheet →EP3SE110F780C4N
✅ Drop-In✓ In Stock
$1395 / Unit
View Datasheet →EP3SE260H780C4N
✅ Drop-In✓ In Stock
$1395 / Unit
View Datasheet →EP3SE80F780C2N Maximum Ratings & Electrical Characteristics
| Family | Stratix III E |
| Logic Elements (LE) | 80,000 |
| Logic Array Blocks (LABs) | 3,200 |
| Embedded Memory | 6,843,392 bits |
| User I/Os | 488 |
| Process Technology | 65 nm |
| Core Voltage (VCCINT) | 1.1 V |
| Auxiliary Voltage (VCCAUX) | 0.9 V |
| Package | 780-Ball FC-FBGA |
| Package Code | F780 |
| Speed Grade | C2 |
| Maximum Operating Frequency | 600 MHz |
| Operating Temperature Grade | Commercial (0C to +85C) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
EP3SE80F780C2N f780 Pin Configuration Guide
Pin configuration for EP3SE80F780C2N (f780 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for EP3SE80F780C2N.
Refer to the datasheet for full pin configuration.
Typical Applications
EP3SE80F780C2N is suitable for 6 applications: High-Speed Networking Line Cards, Wireless Baseband Processing, Test & Measurement Instrumentation, ASIC Prototyping, DSP Acceleration Cards, Video Broadcast Infrastructure.
High-Speed Networking Line Cards
The EP3SE80F780C2N is well suited for high-speed networking line cards where its 80K logic elements, 488 user I/Os, and abundant block RAM deliver the parallel datapath capacity required for packet processing, traffic management, and protocol bridging. The 780-ball FC-FBGA package exposes 36 transceiver channels supporting multi-gigabit SerDes for 10G/40G/100G Ethernet or OTN framer links. With 384 18x18 multipliers and tri-matrix memory blocks, it accelerates hash lookups and QoS classification in real time, while 6.84 Mbits of embedded memory absorbs packet bursts and reduces external SRAM pressure.
Recommended
Wireless Baseband Processing
In wireless baseband processing, the EP3SE80F780C2N's 384 18x18 multipliers, 80K logic elements, and high block RAM bandwidth accelerate LTE/5G NR PHY functions including channel coding, FFT/IFFT, and MIMO decoding. The Stratix III E architecture delivers deterministic latency through dedicated DSP block routing, while the 780-ball FC-FBGA package exposes enough LVDS pairs for CPRI or JESD204B links to RFICs. Operating at the C2 speed grade with commercial-temperature reliability, the device meets the timing margins needed for baseband implementations while keeping power within system budgets.
Recommended
Test & Measurement Instrumentation
Test and measurement platforms benefit from the EP3SE80F780C2N's combination of high-speed transceivers, abundant DSP resources, and 488 user I/Os. The device can implement real-time signal processing for oscilloscope acquisition channels, spectrum analyzer FFT pipelines, and arbitrary waveform generation while exposing parallel LVDS interfaces to ADCs and DACs. The 65 nm process balances dynamic power with timing margin, and the 780-ball FC-FBGA package routes high-speed serial lanes cleanly with controlled impedance. Designers can implement multi-channel coherent processing within a single FPGA, reducing system BOM cost.
Recommended
ASIC Prototyping
The EP3SE80F780C2N serves as a proven ASIC prototyping vehicle because its 80K logic elements, 6.84 Mbits of block RAM, and 488 I/Os map comfortably to mid-complexity ASIC designs while operating on the Quartus II design flow that supports industry-standard synthesis and verification tools. The 780-ball FC-FBGA package provides the I/O density required for emulating real ASIC pad rings, and the Stratix III E architecture allows engineers to partition large ASICs across multiple FPGAs. With the C2 speed grade, designers get timing headroom for bring-up before taping out the ASIC.
Recommended
DSP Acceleration Cards
DSP acceleration cards leverage the EP3SE80F780C2N's 384 dedicated 18x18 multipliers and tri-matrix memory blocks to perform FIR filtering, matrix multiplication, and FFT computation with deterministic latency. The 6.84 Mbits of embedded memory with 9 Kbit and 144 Kbit block options let engineers size data buffers to specific algorithms without wasting fabric resources. PCIe hard IP embedded in Stratix III E combined with the 780-ball FC-FBGA's high I/O count enables compact accelerator cards that plug into host servers via standard PCIe slots for HPC and signal-processing workloads.
Recommended
Video Broadcast Infrastructure
Broadcast video infrastructure uses the EP3SE80F780C2N for SDI/HD-SDI/3G-SDI routing, video format conversion, and real-time video processing. The 488 user I/Os accept multiple SDI input streams via LVDS pairs, while the high logic count handles color space conversion, scaling, and overlay composition. Block RAM buffers full video frames for temporal processing such as deinterlacing and frame-rate conversion. The 780-ball FC-FBGA package supports both the high-speed serial transceivers required for uncompressed video links and the parallel LVDS needed for SDR/DDR memory interfaces to external frame buffers.
Recommended
Recommended Products Summary
Engineering reference data for EP3SE80F780C2N — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | EP3SE80F780C3N | EP3SE80F780C4N | EP3SE80F780C2 | EP3SE110F780C2N | EP3SE110F780C3N | EP3SE110F780C4N | EP3SE260H780C4N |
|---|---|---|---|---|---|---|---|---|
| Package | 780-Ball FC-FBGA (F780) | 780-Ball FC-FBGA (F780) - same | 780-Ball FC-FBGA (F780) - same | 780-Ball FC-FBGA (F780) - same | 780-Ball FC-FBGA (F780) - same | 780-Ball FC-FBGA (F780) - same | 780-Ball FC-FBGA (F780) - same | 780-Ball FC-FBGA (F780) - same |
| Brand | Intel (formerly Altera) | Intel | Intel | Intel | Intel | Intel | Intel | Intel |
| Logic Elements | 80,000 | 80,000 | 80,000 | 80,000 | ~106,500 | ~106,500 | ~106,500 | ~254,000 |
| Speed Grade | C2 | C3 | C4 | C2 | C2 | C3 | C4 | C4 |
| Embedded Memory | 6,843,392 bits | 6,843,392 bits | 6,843,392 bits | 6,843,392 bits | 8,748,288 bits | 8,748,288 bits | 8,748,288 bits | 15,912,192 bits |
| User I/Os | 488 | 488 | 488 | 488 | 488 | 488 | 488 | 488 |
| Process Technology | 65 nm | 65 nm | 65 nm | 65 nm | 65 nm | 65 nm | 65 nm | 40 nm |
| Lifecycle Status (2026-09-09) | NRND | NRND | NRND | NRND | NRND | NRND | NRND | NRND |
| 1k-piece price (USD, as of 2026-09-09) | ~1,180 | ~1,250 | ~1,450 | ~1,150 | ~1,650 | ~1,750 | ~1,900 | ~4,200 |
Key Differentiators
- Same-package higher speed grade available without redesign (vs EP3SE80F780C3N)
- Higher density upgrade available in same package (vs EP3SE110F780C2N)
- Largest logic capacity available in same package (vs EP3SE260H780C4N)
Design Notes
The 780-ball FC-FBGA package requires microvia or via-in-pad PCB technology for the breakout fanout due to the 1.0 mm ball pitch typical of this package family. Use a 1-2-1 stack-up with controlled-impedance stripline or microstrip routing for transceiver lanes. Reference the Altera (Intel) 'Stratix III Device Handbook, Volume 2: Device, Pin-Out' for the per-bank I/O pinout and power pin assignments before laying out the board.
At full transceiver utilization and 100% logic toggle rate, the EP3SE80F780C2N can dissipate 10-15 W. The flip-chip BGA provides an excellent thermal path to the package top, so attach a heatsink with thermal interface material directly to the die-side of the package. For airflow-cooled chassis, design for at least 200 LFM forced air across the heatsink; for conduction-cooled systems, use a copper-tungsten or aluminum heatsink bolted to a chassis cold wall.
Power-supply sequencing per the Stratix III handbook: VCCAUX must reach 0.9 V before or together with VCCINT (1.1 V), and VCCP (1.5 V for I/O banks) must follow VCCINT. Use a multi-rail power sequencer such as the LTC2923 or equivalent to enforce the sequence and prevent latch-up. Decouple each VCCINT and VCCAUX ball with 0.1 uF and 10 uF capacitors placed within 100 mils of the package to suppress transient currents during logic switching.
Transceiver channels require 85-ohm differential controlled impedance routing with length matching to within 5 mils per channel and intra-pair skew under 1 ps. Use AC-coupling capacitors at the transmitter output for protocol compliance (PCIe, XAUI, etc.). Reference Intel's 'Stratix III Transceiver User Guide' for the recommended PCB stack-up and via transition geometries that preserve 10 Gbps signal margins.
Common pitfalls include: (1) using wire-bond-friendly BGA footprints instead of FC-FBGA footprints, causing solder joint failures; (2) omitting the VREFB pins for I/O bank reference voltages, leading to I/O standard failures; (3) failing to enable the JTAG chain pull-up on TCK, causing configuration reliability issues. Review the pin connection guidelines in the Stratix III Device Handbook before finalizing schematic and layout.
Compliance Information
RoHS-compliant per Altera/Intel product page. The 'N' suffix in EP3SE80F780C2N denotes lead-free / RoHS compliance. Not AEC-Q100 qualified (industrial/commercial grade). Halogen-free status not explicitly stated in verified data.
