BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon
MPN: BSS123NH6327XTSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.31 | $3.10 |
| 100 | $0.18 | $18.00 |
| 500 | $0.13 | $65.00 |
| 1,000 | $0.1 | $100.00 |
| 3,000 | $0.085 | $255.00 |
BSS123NH6327XTSA1 Overview
A small-signal N-channel MOSFET (also called an N-channel enhancement-mode FET or N-FET) is a voltage-controlled transistor that uses a positive gate-to-source voltage to create a conductive channel between drain and source. Within the semiconductor taxonomy, this places it as: small-signal MOSFET -> power MOSFET -> discrete semiconductor -> transistor. These devices are the workhorses of low-power switching, level shifting, and high-side / low-side load driving, where their high input impedance and fast switching make them far more efficient than bipolar transistors at small currents.
Key features of the BSS123NH6327XTSA1 include a maximum drain-source on-resistance of 6 Ξ© at VGS = 10 V, a low threshold voltage compatible with 5 V and 3.3 V logic-level gate drive, and an integrated ESD protection diode on the gate. The SOT-23-3 footprint is a de facto industry standard shared by virtually every small-signal N-FET family, enabling PCB layout reuse across many manufacturers. Automotive AEC-Q101 qualification makes the part suitable for under-hood and body-electronics applications where supplier change control and reliability are required.
Architecturally, the BSS123NH6327XTSA1 uses a planar DMOS cell structure optimized for low gate charge (Qg typically around 0.8 nC) and fast switching, with a body-drain diode and an ESD clamp built into the gate pad. The 100 V BVdss rating provides generous margin for 12 V and 24 V automotive buses, while the 6 Ξ© RDS(on) keeps conduction loss manageable at sub-200 mA loads.
Typical applications include load switching in battery-powered IoT devices, level shifters between 3.3 V microcontrollers and 12 V peripherals, high-side driver stages for LEDs and relays, and USB / HDMI port power switching. It is also widely used as a flyback or freewheeling switch in small DC-DC converter blocks.
When designing with this device, observe the 500 mW Ta power dissipation limit and derate output current above 70 Β°C ambient. Gate-source voltage must remain below the absolute maximum of Β±20 V, even though logic levels (3.3 V / 5 V) are sufficient to fully enhance the channel. The SOT-23-3 thermal pad is pin 2 (drain), so PCB copper area on the drain node doubles as a heatsink.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving procurement and design engineers a single source for selection.
Drop-in alternatives for BSS123NH6327XTSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSS123NH6327XTSA1 (same form factor and footprint) β differing in Package, Technology, Operating Temperature Range, Configuration, Drain-Source Voltage (VDS).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSS138NH6327XTSA2
β Drop-Inβ In Stock
$0.15 / Unit
View Datasheet β2N7002H6327XTSA2
β Drop-Inβ In Stock
$0.08 / Unit
View Datasheet βBSS214NH6327XTSA1
β Drop-Inβ In Stock
$0.09 / Unit
View Datasheet βBSS126H6327XTSA2
β Drop-Inβ In Stock
$0.32 / Unit
View Datasheet β2N7002L
β Drop-Inβ In Stock
$0.028 / Unit
View Datasheet βBSS816NWH6327XTSA1
β Drop-Inβ In Stock
$0.14 / Unit
View Datasheet βBSS123NH6327XTSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSS123NH6327XTSA1 |
| Part Status | Active |
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 190 mA (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) |
| RDS(on) Max | 6 Ξ© @ VGS = 10 V |
| Gate-Source Voltage Max (VGS) | Β±20 V |
| Package | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) |
| Qualification | AEC-Q101 (automotive) |
| RoHS Compliance | Yes (Pb-free lead plating) |
| MSL Level | 1 (per JEDEC J-STD-020) |
BSS123NH6327XTSA1 Pin Configuration
| Pin 1 | GATE β Gate control input; logic-level drive at VGS = 3.3 V or 5 V; ESD-protected |
| Pin 2 | DRAIN β Drain output; internally connected to thermal pad; connect to load |
| Pin 3 | SOURCE β Source terminal; typically connected to system ground for low-side switching |
Typical Applications
BSS123NH6327XTSA1 is suitable for 7 applications: Automotive Load Switching, Battery-Powered IoT Devices, Logic-Level Level Shifter, LED Driver High-Side Switch, USB / HDMI Port Power Switching, Industrial Control and Factory Automation, Flyback / Freewheeling Switch in Small DC-DC.
Automotive Load Switching
The BSS123NH6327XTSA1's 100 V BVdss and AEC-Q101 qualification make it ideal for automotive load-switching modules driving lamps, relays, solenoids, and small motors from a 12 V or 24 V bus. At VGS = 5 V (logic level), the FET delivers the rated 190 mA continuous drain current with only ~1.14 W of conduction loss at RDS(on) = 6 Ξ©. Its SOT-23-3 footprint is compatible with all major competitors' small-signal N-FETs, simplifying second-sourcing. The 100 V rating absorbs 24 V jump-start transients without avalanche, an important margin for body-electronics reliability.
Recommended
Battery-Powered IoT Devices
For battery-powered IoT sensor nodes, wearables, and BLE peripherals, the BSS123NH6327XTSA1 acts as a high-side load-disconnect switch between a Li-ion cell and downstream sub-circuits, conserving quiescent current. With a typical Qg of ~0.8 nC, the gate drive overhead is negligible, and the 190 mA rating covers most sensor, radio, and LED-indicator loads. The SOT-23-3 footprint allows the part to share board area with an MCU and a few passives, while the automotive AEC-Q101 qualification guarantees long-term supply stability.
Recommended
Logic-Level Level Shifter
When a 3.3 V microcontroller must control a 12 V or 24 V peripheral, the BSS123NH6327XTSA1 functions as a low-side level translator between the GPIO and the load. The 1.0-2.5 V typical VGS(th) ensures full turn-on at 3.3 V, and the 100 V drain rating accepts 24 V bus transients without damage. The FET's low input capacitance allows direct GPIO drive without a buffer stage, simplifying BOM count. Use a 100 kΞ© gate pull-down to guarantee a defined off-state during MCU reset.
Recommended
LED Driver High-Side Switch
The BSS123NH6327XTSA1 works as a constant-current or PWM-controlled high-side switch for indicator LEDs, status LEDs, and small LED strips up to 190 mA. PWM dimming at frequencies up to ~100 kHz is feasible because the low Qg (~0.8 nC) and small die capacitance keep switching losses minimal. The 100 V rating protects against inductive kickback when the LED string is pulsed, and the SOT-23-3 thermal pad (pin 2 = drain) helps spread heat when driving near-maximum current.
Recommended
USB / HDMI Port Power Switching
For USB Type-A downstream ports, HDMI port-power switches, and other 5 V load-management circuits, the BSS123NH6327XTSA1's 6 Ξ© RDS(on) at 5 V VGS limits conduction loss to ~10 mW at 100 mA load. The 100 V rating provides far more margin than required at 5 V, but it future-proofs the design against user-supplied adapters and surge events. The SOT-23-3 footprint is drop-in compatible with virtually every USB power-switch IC alternative.
Recommended
Industrial Control and Factory Automation
In 24 V industrial PLCs, sensor interfaces, and factory-automation I/O modules, the BSS123NH6327XTSA1 handles inductive load switching for relays, valves, and small solenoids. The 100 V BVdss absorbs 24 V flyback spikes (up to ~80 V transient), and AEC-Q101 qualification guarantees the part survives industrial temperature and vibration profiles. Use a flyback diode across inductive loads for additional protection, and place the FET close to the connector to minimize loop inductance.
Recommended
Flyback / Freewheeling Switch in Small DC-DC
In low-power isolated flyback converters and buck-boost blocks below 200 mA, the BSS123NH6327XTSA1 serves as either the main switching FET or the freewheeling synchronous rectifier. The 100 V drain rating handles 24 V input transients, and the small SOT-23-3 package keeps the converter footprint under 100 mmΒ². Pair with a small PWM controller IC for a complete sub-1 W isolated supply, ideal for IoT and sensor-isolation applications.
Recommended
Recommended Products Summary
Engineering reference data for BSS123NH6327XTSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSS138NH6327XTSA2 | 2N7002H6327XTSA2 | BSS214NH6327XTSA1 | BSS126H6327XTSA2 | 2N7002 | BSS816NWH6327XTSA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Package | SOT-23-3 (PG-SOT23) | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| VDS Max | 100 V | 60 V | 60 V | -20 V (P-channel) | 600 V | 60 V | 20 V |
| Continuous Drain Current | 190 mA | 230 mA | 200 mA | -150 mA (P-channel) | 30 mA | 200 mA | 1.4 A |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | Not AEC-Q101 standard | AEC-Q101 |
| Power Dissipation | 500 mW | 500 mW | 500 mW | 500 mW | 500 mW | 500 mW | 500 mW |
| Approx. Unit Price @ 1k | $0.10 | $0.09 | $0.07 | $0.12 | $0.18 | $0.05 | $0.16 |
Key Differentiators
- 100 V drain-source voltage in SOT-23-3 (vs BSS138NH6327XTSA2)
- AEC-Q101 automotive qualification (vs 2N7002 (legacy onsemi))
- Integrated ESD protection on gate (vs BSS816NWH6327XTSA1)
- Wide VGS range with logic-level drive (vs BSS126H6327XTSA2)
Design Notes
Estimated: with PD = 500 mW max at Ta = 25 Β°C and theta_JA β 357 Β°C/W for a JEDEC EIA/JESD51 1s0p test board, the SOT-23-3 junction-to-ambient thermal resistance is high. At ID = 190 mA and VDS = 5 V, conduction loss is ~217 mW, allowing roughly 50 Β°C temperature rise above ambient. For sustained near-maximum current, increase drain copper area to lower theta_JA toward ~150 Β°C/W.
Place the BSS123NH6327XTSA1 close to the load connector to minimize source-lead inductance and ringing. Connect pin 2 (drain, also thermal pad) to a copper pour on the drain node for both heat dissipation and flyback transient absorption. Add a 100 kΞ© gate pull-down resistor to guarantee a defined off-state when the MCU GPIO is high-impedance during reset.
Do not exceed VGS = Β±20 V absolute maximum, even briefly, as the gate oxide is thin for logic-level operation. For switching inductive loads (relays, solenoids, motors), add a flyback diode in anti-parallel with the load to clamp the drain transient below 100 V. Without the diode, inductive kickback can easily exceed BVdss and permanently damage the FET.
Keep the gate trace short (<10 mm) and route it away from the drain trace to minimize Miller coupling during fast switching. A 10 Ξ©-100 Ξ© gate resistor can be added to slow the edge if ringing is observed. The SOT-23-3 drain pin (pin 2) doubles as the thermal pad - maximize the copper area on this node for improved heat spreading.
The BSS123NH6327XTSA1 has a typical input capacitance Ciss of ~30 pF and Qg of ~0.8 nC. At a 100 kHz PWM rate, gate-drive power is negligible (~80 Β΅W), but at >1 MHz switching speeds the gate-charge losses become significant. For very high-frequency applications, choose a FET with lower Qg, or drive the gate with a dedicated gate-driver IC.
Compliance Information
AEC-Q101 qualified per Infineon BSS123N family datasheet (note: BSS123N family is AEC-Q101, not the older AEC-Q100 standard which is for ICs). RoHS compliant with Pb-free lead plating. Halogen-free per Infineon product page.
