Infineon

BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon

MPN: BSS126H6327XTSA2 βœ“ Active
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600 V Vdss 21 mA Id 500 ohm (typical for depletion-mode) Rds(on) SOT-23-3 (PG-SOT23) Package
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Price updated: 2026-09-10
Volume Pricing
Qty Unit Price Extended
1 $0.78 $0.78
10 $0.65 $6.50
100 $0.48 $48.00
500 $0.39 $195.00
1,000 $0.32 $320.00
ℹ️ All prices are in USD

BSS126H6327XTSA2 Overview

The Infineon BSS126H6327XTSA2 is a 600 V N-channel depletion-mode SIPMOS small-signal MOSFET housed in a 3-pin SOT-23 (PG-SOT23) surface-mount package. It is rated for a continuous drain current of 21 mA (Ta) with a power dissipation of 500 mW (Ta), and a maximum on-resistance of 500 ohm (typical for the depletion mode). Unlike enhancement-mode MOSFETs, the BSS126 is normally-on at zero gate-source voltage, making it uniquely suited to startup, protection, and analog reference roles.

A depletion-mode MOSFET is a field-effect transistor whose channel is physically present at fabrication; conduction is maximum when VGS = 0 and the channel is progressively pinched off as VGS is driven more negative (for an N-channel device). This category sits within the broader MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) family, which in turn belongs to power management and discrete semiconductors. Depletion-mode parts are rare in modern designs but are valued for circuits where the device must conduct before any control voltage is established, such as startup bleeding in offline flyback converters.

Key features of the BSS126H6327XTSA2 include the 600 V drain-source breakdown voltage that gives significant headroom for offline 120/230 VAC-derived rails, a low 21 mA continuous drain rating suitable for low-current auxiliary paths, and Infineon's SIPMOS process which combines vertical DMOS power-device ruggedness with small-signal SOT-23 packaging. The part operates as a constant-current source when biased with an external resistor, and as a high-side or low-side switch when the gate is driven negative relative to the source.

Typical applications include power-supply startup assist (providing initial bias to a controller before the auxiliary winding takes over), over-voltage protection clamps, in-rush current limiters inserted in series with downstream rails, and offline voltage references where the device establishes a defined current into a Zener diode. Its normally-on behavior also makes it useful for fail-safe circuits that must default to a conductive state.

When designing with the BSS126H6327XTSA2, treat the gate as a control input that requires negative bias to turn the device fully off; leaving the gate open is acceptable for many 'normally-on' topologies but ESD handling on the gate node must follow standard SOT-23 precautions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on any single manufacturer or distributor page.

Drop-in alternatives for BSS126H6327XTSA2 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with BSS126H6327XTSA2 (same form factor and footprint) β€” differing in Continuous Drain Current (ID), FET Type, Drain-Source Voltage (VDS), Part Number, Package.

Infineon
Package: PG-SOT23 (SOT-23-3)
Compare with BSS126H6327XTSA2 β†’
Infineon
Continuous Drain Current (ID): 190 mA (Ta)
FET Type: N-Channel, Enhancement Mode
Drain-Source Voltage (VDS): 100 V
Compare with BSS126H6327XTSA2 β†’
Infineon
Continuous Drain Current (ID): 21 mA (Ta)
FET Type: N-Channel SIPMOS, enhancement mode
Drain-Source Voltage (VDS): 600 V
Compare with BSS126H6327XTSA2 β†’
Infineon
Continuous Drain Current (ID): 2.3 A (Ta)
Drain-Source Voltage (VDS): 20 V (maximum)
Part Number: BSS806NEH6327XTSA1
Compare with BSS126H6327XTSA2 β†’
Infineon
Continuous Drain Current (ID): -170 mA (Ta)
FET Type: P-Channel
Part Number: BSS84PH6327XTSA2
Compare with BSS126H6327XTSA2 β†’

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

BSS126H6906XTSA1

βœ… Drop-In
πŸ“¦ SOT-23-3 (PG-SOT23)
same die, AEC-Q101 automotive grade qualified, pin-to-pin compatible

πŸ“‹ Reference alternative (not in catalog)

BSS119NH6327XTSA1

βœ… Drop-In
Infineon
πŸ“¦ SOT-23-3 (PG-SOT23)
N-Channel MOSFET Β· Enhancement-mode, planar N-channel Β· 100 V Β· 190 mA Β· 500 mW Β· Β±20 V max

βœ“ In Stock

$0.12 / Unit

View Datasheet β†’

BSS127H6327XTSA2

βœ… Drop-In
Infineon
πŸ“¦ SOT-23-3 (PG-SOT23)
N-Channel SIPMOS, enhancement mode Β· 600 V Β· 21 mA (Ta) Β· 4.5 V (logic level, rated) Β· 500 ohm at ID = 21 mA Β· 500 mW (Ta)

βœ“ In Stock

$0.032 / Unit

View Datasheet β†’

BSS123NH6327XTSA1

βœ… Drop-In
Infineon
πŸ“¦ SOT-23-3 (PG-SOT23)
Infineon Technologies Β· BSS123NH6327XTSA1 Β· Active Β· N-Channel, Enhancement Mode Β· 100 V Β· 190 mA (Ta) Β· 500 mW (Ta) Β· 6 Ξ© @ VGS = 10 V

βœ“ In Stock

$0.085 / Unit

View Datasheet β†’

BSS127S-7

βœ… Drop-In
πŸ“¦ SOT-23-3
same SOT-23 footprint, N-channel enhancement-mode, cross-brand alternative per Utmel comparison

πŸ“‹ Reference alternative (not in catalog)

BSS84PH6327XTSA2

βœ… Drop-In
Infineon
πŸ“¦ SOT-23-3 (PG-SOT23)
Infineon Technologies Β· BSS84PH6327XTSA2 Β· P-Channel Β· -60 V Β· -170 mA (Ta) Β· 360 mW (Ta) Β· 8 ohm at VGS = -10 V

βœ“ In Stock

$0.1 / Unit

View Datasheet β†’

BSS126H6327XTSA2 Maximum Ratings & Electrical Characteristics

FET Type N-Channel Depletion Mode
Drain-Source Voltage (VDS) Max 600 V
Continuous Drain Current (ID) at Ta 21 mA
Power Dissipation (PD) at Ta 500 mW
On-Resistance (RDS(on)) Max 500 ohm (typical for depletion-mode)
Technology SIPMOS (DMOS)
Package SOT-23-3 (PG-SOT23)
Mounting Type Surface Mount
Operating Temperature Range -55C to +150C (junction, typical)
Pin Count 3
Configuration Single
Channel Mode Depletion (normally-on at VGS = 0)
MSL Level 1 (per JEDEC J-STD-020)
RoHS Status Compliant
Lead-Free Yes
Halogen-Free Yes (Infineon 'green' package)

BSS126H6327XTSA2 Pin Configuration

SOT-23 Package Pinout Diagram SOT-23 3-pin surface mount transistor, JEDEC TO-236. Pin 1 by dot. 1 2 3 SOT-23
Pin 1 Gate β€” Gate control input; negative VGS required to turn off depletion-mode channel
Pin 2 Source β€” Source terminal; reference node for gate drive
Pin 3 Drain β€” Drain terminal; high-voltage switching node

Typical Applications

BSS126H6327XTSA2 is suitable for 6 applications: Offline Flyback Startup Bias, Over-Voltage Protection Clamp, In-Rush Current Limiter, Offline Voltage Reference, Fail-Safe Relay Driver, Industrial Sensor Signal Conditioning.

⚑

Offline Flyback Startup Bias

The BSS126H6327XTSA2's 600 V VDS and depletion-mode (normally-on) characteristic make it ideal for offline flyback converter startup bias paths, where it must conduct before any controller is awake. Per Infineon application guidance, the device is wired between the rectified HV rail and the auxiliary VCC node; as the auxiliary winding takes over, a negative gate drive progressively starves the BSS126, reducing wasted dissipation. Its 21 mA ID rating matches the typical 5-15 mA controller quiescent bias, and the SIPMOS process delivers the ruggedness needed to absorb repetitive avalanche energy during the startup transient.

πŸ›‘οΈ

Over-Voltage Protection Clamp

For over-voltage protection clamps on auxiliary rails, the BSS126H6327XTSA2 provides a normally-on conduction path that latches into a defined fault state when a downstream Zener reference is exceeded. According to Infineon product application notes, the 600 V breakdown gives ample margin for 24 V industrial rails with inductive spikes, while the 500 mW power dissipation rating handles short transient stress events. The depletion-mode channel ensures the clamp is engaged from power-on, eliminating the cold-start blind spot of enhancement-mode protection devices.

πŸ”Œ

In-Rush Current Limiter

In in-rush current limiters, the BSS126H6327XTSA2 acts as a series-pass element that begins conducting at power-on (depletion-mode normally-on) and is gradually pinched off by a control circuit as the downstream bulk capacitors charge. The 21 mA ID limit comfortably handles the reduced steady-state current once limiting is complete, and the SOT-23 footprint suits compact auxiliary rails. Compared to NTC thermistors, the BSS126 active limiter recovers immediately after a fault, with no thermal cool-down delay.

πŸ“

Offline Voltage Reference

As an offline voltage reference element, the BSS126H6327XTSA2 establishes a defined constant current into a Zener diode, producing a stable reference voltage on the high-voltage side before any isolation or regulation is active. The depletion-mode channel guarantees the reference is alive at power-on, while the 600 V breakdown withstands the unconditioned rectified mains. The SOT-23 package allows placement directly across the HV rails without crowding the main power stage.

πŸŽ›οΈ

Fail-Safe Relay Driver

For fail-safe relay driver paths, the BSS126H6327XTSA2's normally-on characteristic ensures the relay defaults to its energized state when the system controller is unpowered, satisfying safety requirements for alarm or emergency circuits. The 600 V VDS allows the same part to be reused on 48 V telecom relays and 24 V industrial rails. A small-signal transistor pulling the gate below source turns the device off during normal operation.

🏭

Industrial Sensor Signal Conditioning

In industrial 4-20 mA sensor loops and high-side current sources, the BSS126H6327XTSA2 provides a stable high-impedance constant-current element when biased with a source resistor. The SOT-23-3 footprint allows dense PCB layout on sensor front-ends, while the 600 V rating tolerates common-mode transients on long field wiring, protecting downstream ADC inputs. The depletion-mode behavior simplifies the bootstrap power architecture in 2-wire loop-powered transmitters.

What is the maximum drain-source voltage of BSS126H6327XTSA2?
The BSS126H6327XTSA2 is rated for a maximum drain-source voltage (VDS) of 600 V. According to Infineon product page (infineon.com/part/BSS126), this high VDS rating provides the headroom required for offline 120/230 VAC-derived rails and ensures the part can withstand repetitive voltage spikes seen across the auxiliary winding of a flyback converter during startup and load transients.
Is the BSS126H6327XTSA2 a depletion-mode or enhancement-mode MOSFET?
The BSS126H6327XTSA2 is an N-channel depletion-mode MOSFET, meaning its channel is physically present at fabrication and the device conducts when VGS equals 0 V. According to Infineon product materials, the channel is pinched off by driving VGS negative. This normally-on behavior is rare among modern discretes and is precisely why the part suits startup-bias and fail-safe protection circuits.
Where can I buy BSS126H6327XTSA2 online?
The BSS126H6327XTSA2 is in stock at major authorized distributors including DigiKey (5413657), Mouser, Newark (47W3357), and Octopart-aggregated resellers, as of 2026-09-10. Stock and pricing can be confirmed on the DigiKey product page where 3000-piece reels ship immediately; Octopart compares 8 distributors for best bulk pricing including Win Source and Veswin Electronics.
What is the price of BSS126H6327XTSA2?
As of 2026-09-10, the BSS126H6327XTSA2 unit price at qty-1 is approximately $0.78, dropping to $0.32 at qty-1000 per distributor listings. According to DigiKey and Mouser live pricing, reel-size pricing (3000 pcs) is typically $0.28-$0.30 per piece. Pricing varies with distributor stock and reel vs cut-tape packaging, so Octopart price comparison is recommended for high-volume procurement.
What is the lead time for BSS126H6327XTSA2?
The BSS126H6327XTSA2 ships immediately from DigiKey (in stock, ships today) and from Mouser per distributor stock data, as of 2026-09-10. Standard lead time is 2-5 business days for domestic orders and 1-2 weeks for international shipments from European Infineon warehouses. No factory lead-time constraint is indicated on the Infineon product page, meaning the part is in active production.
BSS126H6327XTSA2 vs BSS127S-7 - which is better for high-voltage startup?
The BSS126H6327XTSA2 (600 V VDS, 21 mA ID, depletion mode) is preferred for high-voltage startup-bias paths because depletion-mode devices conduct before any gate drive is established, while the BSS127S-7 (also Infineon, SOT-23, enhancement mode) requires positive VGS to begin conducting. According to cross-reference data from Utmel, both share SOT-23 footprint, but only the BSS126H6327XTSA2 offers the normally-on characteristic that defines startup-assist circuits.
What is the difference between BSS126H6327XTSA2 and BSS126H6906XTSA1?
The BSS126H6327XTSA2 and BSS126H6906XTSA1 are the same Infineon BSS126 die in the SOT-23-3 package; the H6906XTSA1 suffix denotes the automotive AEC-Q101 qualified variant. According to Xecor and FindIC parametric comparisons, the H6906 part carries the same 600 V VDS, 21 mA ID, and SIPMOS technology, but adds qualification for automotive temperature grades and traceability.
When should I choose BSS126H6327XTSA2 over an enhancement-mode MOSFET?
Choose the BSS126H6327XTSA2 when the application requires the device to conduct before any gate drive is present, such as offline flyback startup bleeding, fail-safe over-voltage clamps, and current-source references. According to Infineon datasheet applications, enhancement-mode MOSFETs are unsuitable for these roles because they need a positive VGS to even begin conduction. For general switching where normally-off behavior is acceptable, an enhancement-mode part is the better fit.
What is the best drop-in replacement for BSS126H6327XTSA2?
The best drop-in replacement for the BSS126H6327XTSA2 is the BSS126H6906XTSA1 (Infineon, automotive-grade, same SOT-23 die) when automotive qualification is desired. For non-automotive applications, the BSS126S-7 (Diodes Incorporated, SOT-23) and BSS119NH6327XTSA1 (Infineon, SOT-23) are pin-compatible alternatives, though parametric match in depletion-mode characteristics should be confirmed against the target datasheet before substituting.
Where to download the BSS126H6327XTSA2 datasheet PDF?
The BSS126H6327XTSA2 datasheet PDF is available from the Infineon product page at infineon.com/part/BSS126, with a direct PDF link in the dgdl datasheet folder. According to Octopart datasheet references, the same document is also mirrored on distributor sites including DigiKey (5413657) and Mouser product pages, with parametric summary tables and maximum ratings.
Where can I find the BSS126H6327XTSA2 pinout?
The BSS126H6327XTSA2 pinout for the 3-pin SOT-23 (PG-SOT23) follows the standard Infineon SOT-23-3 small-signal MOSFET assignment with pin 1 as Gate, pin 2 as Source, and pin 3 as Drain (G-S-D orientation). According to the Infineon datasheet, the pin numbering matches the JEDEC TO-236-3 / SC-59 outline, with pin 1 identified by the dot or chamfer mark on the package top.
What is the on-resistance of BSS126H6327XTSA2?
The BSS126H6327XTSA2 specifies a maximum drain-source on-resistance of 500 ohm at VGS = 0 V, per Infineon product page parameters. This high RDS(on) is characteristic of depletion-mode small-signal MOSFETs designed for low-current auxiliary paths, and it is intentional: the device is not optimized for switching efficiency but for stable constant-current behavior when biased with a source resistor.
Is BSS126H6327XTSA2 suitable for in-rush current limiting?
Yes, the BSS126H6327XTSA2 is well-suited for in-rush current limiting, per Infineon product page application guidance. Because it is normally-on at VGS = 0, the device begins conducting immediately at power-on; once the system rail is stable, a negative VGS applied to the gate progressively reduces conduction, limiting the in-rush spike into downstream bulk capacitors. This makes it more reliable than a simple resistor-based limiter.
Hey Google, can BSS126H6327XTSA2 be used as a high-side switch?
Yes, the BSS126H6327XTSA2 can be configured as a high-side switch in low-current applications. Because the depletion-mode channel is normally-on, a source-side driver circuit that pulls the gate below the source by enough volts (per datasheet VGS off threshold) will turn the device off. For typical 12-24 V systems the simple level-shifted gate drive is straightforward, but at higher rail voltages a dedicated gate-driver network is recommended.
What are the key specifications of BSS126H6327XTSA2 that engineers should know?
Engineers specifying the BSS126H6327XTSA2 should focus on four key parameters: 600 V maximum drain-source voltage, 21 mA continuous drain current at Ta, 500 mW power dissipation at Ta, and 500 ohm maximum on-resistance (typical of depletion-mode). The SOT-23-3 (PG-SOT23) package is the standard small-signal outline, and the part is RoHS-compliant with halogen-free green packaging per Infineon product compliance documentation.

Engineering reference data for BSS126H6327XTSA2 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the BSS126H6327XTSA2 when you need a depletion-mode N-channel MOSFET that conducts before any gate drive is present, in a standard SOT-23-3 footprint. Its 600 V VDS rating makes it ideal for offline 120/230 VAC startup-bias, in-rush limiting, over-voltage protection clamps, and offline voltage references. For automotive-grade designs, migrate directly to the BSS126H6906XTSA1 which carries the same die with AEC-Q101 qualification. If you do not need the normally-on behavior and want a general-purpose enhancement-mode switch in the same footprint, the BSS127H6327XTSA2 (Infineon) or BSS127S-7 (Diodes Incorporated) are pin-compatible drop-in alternatives.

Comparison with Alternatives

Parameter This Product BSS126H6906XTSA1 BSS119NH6327XTSA1 BSS127H6327XTSA2 BSS123NH6327XTSA1 BSS127S-7
Package SOT-23-3 (PG-SOT23) SOT-23-3 (PG-SOT23) - same SOT-23-3 (PG-SOT23) - same SOT-23-3 (PG-SOT23) - same SOT-23-3 (PG-SOT23) - same SOT-23-3 - same
Brand Infineon Infineon Infineon Infineon Infineon Diodes Incorporated
FET Type N-Channel Depletion N-Channel Depletion N-Channel Depletion N-Channel Enhancement N-Channel Enhancement N-Channel Enhancement
Automotive Grade (AEC-Q101) No Yes (AEC-Q101) No No No No
RoHS / Halogen-Free Yes / Yes Yes / Yes Yes / Yes Yes / Yes Yes / Yes Yes / Yes

Key Differentiators

  • 600 V VDS in SOT-23-3 small-signal outline (vs BSS127S-7 (Diodes Incorporated))
  • Depletion-mode normally-on behavior (vs BSS123NH6327XTSA1)
  • Automotive-qualified variant available in same die (vs BSS126H6906XTSA1)

Design Notes

Do not leave the BSS126H6327XTSA2 gate floating. Although depletion-mode devices conduct at VGS=0, an uncontrolled gate node can pick up noise and modulate the channel; tie the gate to source through a high-value resistor (1-10 Mohm) to define a default state. For gate-driven turn-off, ensure the negative VGS drive reaches at least the datasheet threshold across the full temperature range, including cold-start worst case at -40C.

Estimated: at 21 mA continuous drain current and 500 mW power dissipation rating on the SOT-23-3 package, the device can dissipate its full rating on the standard JEDEC 1sq-in copper pour with theta_JA around 250-300 C/W. For sustained high-voltage, high-current operation, derate by 30-50% or add additional thermal copper. In offline startup applications the device runs only during the brief bias-up phase so thermal stress is well below steady-state rating.

Place the BSS126H6327XTSA2 source pin directly at the local ground return, with the gate-bias network returned to the same source node to avoid ground-loop modulation of VGS. Route the high-voltage drain trace with adequate clearance per IPC-2221 for the working voltage plus margin. Keep the gate trace short and away from the switching drain node to prevent capacitive coupling that could re-trigger the channel during high dV/dt events.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

RoHS and halogen-free green packaging per Infineon product compliance. AEC-Q101 qualified variant available as BSS126H6906XTSA1 for automotive.

Data verified on: 2026-09-10 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon BSS126H6327XTSA2 BSS126 BSS126H6906XTSA1 BSS119NH6327XTSA1 BSS127H6327XTSA2 BSS123NH6327XTSA1 BSS127S-7 Depletion-mode MOSFET N-channel MOSFET SIPMOS SOT-23 PG-SOT23 JEDEC J-STD-020 AEC-Q101 RoHS REACH halogen-free flyback converter startup bias in-rush current limiter over-voltage protection offline voltage reference DMOS technology TO-236-3 SC-59
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