EP3SE260H780I3N - Stratix III E FPGA 255K LE 780-FCBGA | Intel
MPN: EP3SE260H780I3N ⚠ Last Time Buy| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4250 | $4,250.00 |
| 5 | $4015 | $20,075.00 |
| 10 | $3825 | $38,250.00 |
| 25 | $3610 | $90,250.00 |
| 100 | $3295 | $329,500.00 |
EP3SE260H780I3N Overview
What is an FPGA? A Field-Programmable Gate Array is a semiconductor device containing an array of configurable logic blocks (CLBs), programmable routing, dedicated DSP blocks, embedded memory (BRAM/M9K/M144K), high-speed transceivers, and I/O cells, all configured via an SRAM-based bitstream after PCB assembly. FPGAs sit at the top of the programmable logic hierarchy (FPGA > CPLD > PLD > digital logic IC > semiconductor), bridging software-defined hardware and ASIC-class performance for prototyping, low-volume production, and applications where time-to-market dominates unit-cost sensitivity. The Stratix III generation specifically targets high-performance signal processing, telecom baseband, and ASIC-prototyping workloads.
Key features include 10,200 Logic Array Blocks (LABs), 488 user I/Os supporting multiple I/O standards (LVDS, LVTTL, SSTL, HSTL), embedded multipliers and DSP blocks for high-throughput arithmetic, and 16,672,768 bits of on-chip RAM configurable as true dual-port, simple dual-port, or single-port memory. The device also provides up to 12 transceivers (per Stratix III E family) for multi-gigabit serial links, PLL-based clock management, and dynamic on-chip termination (OCT) for signal integrity.
Architecturally, the Stratix III E family uses a 65 nm TSMC process with adaptive logic modules (ALMs) - each ALM packs eight 6-input LUTs into a single structure, yielding roughly twice the logic density of the prior Stratix II generation at equivalent performance. The 'I' suffix in the part number indicates industrial temperature grade (-40 °C to +100 °C ambient operation), while the '3' speed grade positions this device in the mid-performance tier (Stratix III speed grades: 2 = fast, 3 = mid, 4 = slow).
Typical applications include ASIC prototyping, high-end DSP and image processing, telecom baseband and channel cards, military/aerospace signal processing, high-speed serial protocol bridging (PCIe, Serial RapidIO, Aurora, CEI-6G), and test & measurement instrumentation. The 488 I/O count makes it well-suited for bus-heavy designs requiring wide parallel interfaces to DDR/QDR memories and external ASICs.
When designing with this device, allocate adequate PCB layers (typically 12+ for a 780-pin FCBGA), use a multi-via-per-pad escape pattern for the BGA fan-out, and follow Intel/Altera's Stratix III Handbook power-rail sequencing recommendations (VCCINT, VCCAUX, VCCPD rails must sequence within 100 ms to prevent latch-up). Decoupling requires a mix of 0402/0201 ceramic capacitors placed as close to every power pin as possible.
This page synthesizes distributor pricing, same-family Stratix III alternatives, application guidance, and PCB layout considerations drawn from the manufacturer datasheet family and current distributor inventory - information that a raw datasheet PDF alone does not provide.
Drop-in alternatives for EP3SE260H780I3N — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with EP3SE260H780I3N (same form factor and footprint) — differing in Package, Operating Temperature, Mounting Type, Family, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
EP3SE260H780I3
✅ Drop-In✓ In Stock
$1410 / Unit
View Datasheet →EP3SE260H780I4N
✅ Drop-In✓ In Stock
$2150 / Unit
View Datasheet →EP3SE260H780I2N
✅ Drop-In📋 Reference alternative (not in catalog)
EP3SE260H780C3N
✅ Drop-In✓ In Stock
$1325 / Unit
View Datasheet →EP3SE260H780C4N
✅ Drop-In✓ In Stock
$1395 / Unit
View Datasheet →EP3SE260H780C2N
✅ Drop-In✓ In Stock
$3600 / Unit
View Datasheet →EP3SE260H780I3N Maximum Ratings & Electrical Characteristics
| Family | Stratix III E |
| Logic Elements (LE) | 255,000 |
| Logic Array Blocks (LABs) | 10,200 |
| Embedded Memory (bits) | 16,672,768 |
| User I/Os | 488 |
| Operating Frequency (max) | 500 MHz |
| Process Technology | 65 nm CMOS |
| Core Supply Voltage (VCCINT) | 1.1 V |
| Number of Pins | 780 |
| Package | 780-FBGA (HBGA, FCBGA) |
| Package Code | BGA780 |
| Mounting Type | Surface Mount (FCBGA) |
| Temperature Grade | Industrial (-40C to +100C) |
| Speed Grade | 3 (mid) |
| RoHS Status | Compliant |
| Lead-Free / Halogen-Free | Lead-Free (per datasheet family) |
| Programmable Logic Type | SRAM-based FPGA |
EP3SE260H780I3N bga780 Pin Configuration Guide
Pin configuration for EP3SE260H780I3N (bga780 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for EP3SE260H780I3N.
Refer to the datasheet for full pin configuration.
Typical Applications
EP3SE260H780I3N is suitable for 6 applications: ASIC Prototyping and Emulation, Telecom Baseband and Channel Cards, High-Performance DSP and Image Processing, High-Speed Serial Protocol Bridging, Test and Measurement Instrumentation, Military and Aerospace Signal Processing.
ASIC Prototyping and Emulation
The EP3SE260H780I3N is one of Intel's go-to FPGAs for ASIC prototyping because 255,000 logic elements (10,200 LABs) can map very large ASIC RTL partitions, and the 16,672,768 embedded-memory bits support multi-MB trace buffers and transaction recorders. Its 488 user I/Os provide enough physical pins to break out wide SoC buses (AXI, AHB, NoC, DDR controller interfaces) to daughter boards for multi-FPGA partitioning. In a typical emulation flow, design teams target this device with Quartus II and use the JTAG configuration chain to load the bitstream per design revision; the -3 speed grade at 500 MHz core allows real-time ASIC verification at near-SoC speeds. The trade-off vs a larger Stratix IV/V is cost - the EP3SE260H780I3N is still widely available in the LTB window at a fraction of the price.
Recommended
Telecom Baseband and Channel Cards
Telecom baseband and channel-card designs favor the EP3SE260H780I3N because it combines high logic density with embedded DSP blocks and multi-gigabit transceivers that implement CPRI, OBSAI, and Serial RapidIO links to baseband ASICs and RF front ends. The 488 user I/Os allow direct connection to QDR-II/DDR-II SRAM and DDR3 SDRAM memory banks for packet buffering. Industrial temperature grade ('I' suffix) is critical for outdoor base-station equipment where ambient can exceed 70 °C. The 780-FCBGA H780 package is also thermally robust enough to dissipate the dynamic power at full 500 MHz operation with a properly designed heatsink and PCB thermal via array. Engineers typically place this device on a 12-layer board with 1 oz copper inner planes for power and ground.
Recommended
High-Performance DSP and Image Processing
DSP and image-processing pipelines map efficiently to the EP3SE260H780I3N's adaptive logic modules and embedded 18x18 multipliers, which support up to hundreds of multiply-accumulate (MAC) operations per clock in parallel. A 500 MHz Fmax supports real-time 1080p60 video processing, radar pulse compression, and FFT kernels up to 64K points in a single device. The 16,672,768 embedded memory bits are commonly partitioned into line buffers, FFT working buffers, and coefficient ROMs, which eliminates most external SRAM in a typical video-processing reference design. The 488 I/Os allow direct connection to BT.1120 video streams, Camera Link inputs, and HDMI/DVI receivers without external serializer/deserializer chips in many cases.
Recommended
High-Speed Serial Protocol Bridging
The EP3SE260H780I3N's integrated multi-gigabit transceivers (per Stratix III E specifications) support PCIe Gen1/Gen2, Serial RapidIO, Aurora 8b/10b, CEI-6G, and Gigabit Ethernet protocols at line rates up to 6.375 Gbps, making it ideal for protocol-bridging cards in test, telecom, and military systems. A typical use case is bridging a 10 Gigabit Ethernet (XAUI) uplink to multiple PCIe Gen2 endpoints on a backplane, or converting proprietary 4.25 Gbps serial links to DDR3 memory buffers. Industrial temperature grade and the 780-ball FCBGA's proven thermal performance allow deployment in NEBS-compliant carrier-grade equipment. Quartus II's transceiver toolkit provides eye-diagram and BER characterization for link-margin verification.
Recommended
Test and Measurement Instrumentation
Test and measurement (T&M) instruments such as high-end oscilloscopes, logic analyzers, and protocol testers use the EP3SE260H780I3N for real-time signal-acquisition control, trigger logic, and on-instrument DSP. The 488 I/Os are typically partitioned into groups for high-speed ADC/DAC LVDS interfaces (e.g., 16 channels at 1 GSps), trigger comparators, front-panel I/O, and DDR3/QDR-II sample memory. The 16,672,768 embedded memory bits allow deep acquisition windows of up to several megabytes without external SRAM. Industrial temperature grade is required for lab and field-deployed T&M equipment. The Quartus II SignalTap II embedded logic analyzer uses the device's on-chip memory for trace capture during debug, eliminating the need for external logic-analyzer pods in many cases.
Recommended
Military and Aerospace Signal Processing
Defense and aerospace signal-processing applications such as phased-array radar, electronic-warfare (EW) receivers, and software-defined radio (SDR) platforms rely on the EP3SE260H780I3N for high-throughput baseband processing, beamforming, and modulation/demodulation. The industrial temperature grade, lead-free RoHS-compliant finish (the 'N' suffix), and 65 nm CMOS process node provide a stable supply chain and predictable reliability for long-lifecycle defense programs. The 255K-LE logic capacity supports full SDR waveforms (WCDMA, LTE, tactical radios) and adaptive-beamforming weights for 32-64 element antenna arrays. The 488 user I/Os interface to high-speed ADCs (e.g., 12-/14-bit, 500 MSps) and DACs across multiple channels. The 780-FCBGA package is hermetically sealable for avionics and ruggedized enclosures.
Recommended
Recommended Products Summary
Engineering reference data for EP3SE260H780I3N — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | EP3SE260H780I3 | EP3SE260H780I4N | EP3SE260H780I2N | EP3SE260H780C3N | EP3SE260H780C4N | EP3SE260H780C2N |
|---|---|---|---|---|---|---|---|
| Brand | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) |
| Package | 780-FBGA (H780) | 780-FBGA (H780) | 780-FBGA (H780) | 780-FBGA (H780) | 780-FBGA (H780) | 780-FBGA (H780) | 780-FBGA (H780) |
| Logic Elements | 255,000 | 255,000 | 255,000 | 255,000 | 255,000 | 255,000 | 255,000 |
| Speed Grade | -3 (mid) | -3 (mid) | -4 (slow) | -2 (fast) | -3 (mid) | -4 (slow) | -2 (fast) |
| Temperature Grade | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Commercial (0C to +85C) | Commercial (0C to +85C) | Commercial (0C to +85C) |
| Lead-Free Finish (N suffix) | Yes | No (SnPb finish) | Yes | Yes | Yes | Yes | Yes |
| Embedded Memory (M9K/M144K bits) | 16,672,768 | 16,672,768 | 16,672,768 | 16,672,768 | 16,672,768 | 16,672,768 | 16,672,768 |
| User I/Os | 488 | 488 | 488 | 488 | 488 | 488 | 488 |
| Core Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
Key Differentiators
- Lead-free RoHS-compliant finish suitable for EU/global markets (vs EP3SE260H780I3)
- Industrial temperature grade for harsh-environment deployment (vs EP3SE260H780C3N)
- Mid-tier -3 speed grade balances Fmax and cost vs fastest tier (vs EP3SE260H780I2N)
Design Notes
The 780-ball FCBGA (H780) package uses a 1.0 mm ball pitch and demands a 12+ layer PCB with via-in-pad or microvia escape patterns. Use 0.8 mm drilled microvias for the top two layers and back-drilled larger vias on inner layers to minimize stub-induced reflections on high-speed transceiver and DDR memory traces. Maintain a continuous reference plane under every BGA escape via and route all high-speed signals on inner stripline layers with controlled 50 ohm (single-ended) or 100 ohm differential impedance. Decoupling requires a combination of 0402 and 0201 ceramic capacitors placed within 1-2 mm of every VCCINT, VCCAUX, and VCCPD pin, plus bulk polymer or tantalum capacitors near each power pin group.
The Stratix III E device requires carefully sequenced power rails (VCCINT 1.1 V core, VCCAUX 2.5 V PLL supply, VCCPD 3.3 V or 2.5 V I/O pre-driver, VCCIO per bank). VCCINT and VCCAUX must rise monotonically and reach 90% of nominal within 100 ms of each other to prevent latch-up; VCCPD should follow VCCINT. Use a dedicated power-supply sequencer IC (TI UCD9222 or equivalent) or an FPGA-configurable sequencer. The EP3SE260 device can draw 5-10 A dynamic current on VCCINT at full 500 MHz utilization across 255K logic elements, so a 4-layer power plane plus 2 oz copper outer layers on the BGA footprint are typically required. Use PowerPlay early-power-estimator (EPE) spreadsheets to size the DC-DC converter and the bulk capacitor bank before layout.
Multi-gigabit transceiver channels (up to 6.375 Gbps per Stratix III E specifications) require tightly matched 100 ohm differential pairs, with intra-pair skew under 1 ps and inter-pair skew under 5 ps. Use the Stratix III Handbook's recommended coupling capacitor (0.01 uF or 0.1 uF 0402 X7R) on each transmit differential pair close to the FPGA ball. The receiver AC-coupling capacitors and the AC-coupled protocol (PCIe, XAUI, etc.) topology depend on the link partner; consult the Stratix III Transceiver User Guide for pre-emphasis and equalization settings. Run a 3D electromagnetic simulation (Ansys HFSS, Cadence Clarity) on critical transceiver lanes before tape-out, especially when using a non-reference-design PCB stack-up.
The EP3SE260 can dissipate 10-20 W depending on toggle rate and logic utilization. Use a thermal via array directly under the exposed pad / thermal balls of the 780-FCBGA (typically the central GND balls serve as the primary thermal path), with 0.3 mm drilled thermal vias filled with solder or epoxy and capped on the opposite side of the PCB. Attach a heatsink with a thermal interface material (TIM) of conductivity >= 3 W/m·K. For enclosed chassis, model junction temperature with the Stratix III power-estimator and confirm Tj_max < 100 °C at worst-case industrial temperature ambient (85 °C) plus margin. The H780 package thermal resistance (theta_JA) is approximately 0.5-1.0 C/W with a properly designed heatsink; without a heatsink, theta_JA exceeds 15 C/W and is unacceptable for sustained operation.
Compliance Information
The trailing 'N' suffix in the part number explicitly denotes lead-free terminal finish per Intel/Altera ordering code conventions. RoHS compliance and REACH declarations are available in the Stratix III Device Handbook material-declaration appendix. AEC-Q100 is not applicable (FPGAs are not qualified to AEC-Q100 automotive standards).
