EP3SE80F780I3N - 80K LEs Stratix III E FPGA, 488 I/O, 780-FBGA | Intel
MPN: EP3SE80F780I3N ⚠ Last Time Buy| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2967.99 | $2,967.99 |
| 10 | $2780 | $27,800.00 |
| 100 | $2540 | $254,000.00 |
| 500 | $2310 | $1,155,000.00 |
| 1,000 | $2105 | $2,105,000.00 |
EP3SE80F780I3N Overview
What is an FPGA? A Field-Programmable Gate Array is a class of programmable logic device that allows hardware designers to configure logic blocks, routing, and I/O behavior after manufacturing. FPGAs sit hierarchically between fixed-function ASICs and general-purpose processors, providing hardware-timed parallelism, reconfigurable fabric, and high-speed serial transceivers. The Stratix III E family specifically targets high-performance DSP and memory-intensive applications, combining substantial logic density with embedded memory, DSP blocks, and rich high-speed serial I/O. The EP3SE80 variant sits in the mid-density tier of the family, balancing logic resources, memory, and I/O count for moderate-to-large system designs.
The device integrates up to 488 general-purpose I/Os supporting multiple single-ended and differential I/O standards including LVDS, LVTTL, LVCMOS, SSTL, and HSTL. It contains dedicated on-chip memory blocks, hardware multiplier/accumulator DSP blocks, and up to 12 embedded transceivers depending on the package variant. The 780-FBGA package provides controlled-impedance routing for high-speed signals and an exposed-die thermal management path, supporting industrial junction temperature operation.
Typical applications include high-performance ASIC prototyping, wireless baseband processing, high-speed serial interface bridging, radar and image processing front-ends, and military/aerospace signal processing. The combination of 80K logic elements and 6.8 Mbit embedded RAM enables large packet buffers and FFT scratchpad memories without external SRAM, while the 488 I/O support enables direct connection to DDR/DDR2/QDR II memories and parallel ADC/DAC interfaces.
When designing with this FPGA, ensure power-rail sequencing respects the 1.1 V core / auxiliary supply relationship defined in the datasheet, and that the board's decoupling network meets the transient current demands of simultaneous logic-switching events. Programming via JTAG or the active serial configuration scheme requires a Quartus II-supported configuration device.
This page synthesizes distributor pricing, drop-in same-brand alternatives from the Stratix III E family, and practical design considerations that complement the manufacturer datasheet.
Drop-in alternatives for EP3SE80F780I3N — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with EP3SE80F780I3N (same form factor and footprint) — differing in Package, Logic Elements, Embedded Memory Bits, Speed Grade, Operating Temperature.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
EP3SE80F780I3
✅ Drop-In ⚠️ 参数待验证✓ In Stock
Contact for price
View Datasheet →EP3SE80F780I4N
✅ Drop-In✓ In Stock
$3400 / Unit
View Datasheet →EP3SE110F780I3N
✅ Drop-In✓ In Stock
$1950 / Unit
View Datasheet →EP3SE110F780I3
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1395 / Unit
View Datasheet →EP3SE110F780I4N
✅ Drop-In✓ In Stock
$1850 / Unit
View Datasheet →EP3SE50F780I3N
✅ Drop-In✓ In Stock
$1550 / Unit
View Datasheet →EP3SE80F780I3N Maximum Ratings & Electrical Characteristics
| Family | Stratix III E |
| Logic Elements | 80,000 |
| Embedded Memory Bits | 6,843,392 |
| Maximum User I/O | 488 |
| Core Voltage | 1.1 V |
| Process Technology | 65 nm CMOS |
| Package | 780-ball FBGA (FCBGA) |
| Number of Pins / Balls | 780 |
| Operating Temperature Grade | Industrial (-40C to +100C) |
| Maximum Core Frequency | 500 MHz |
| Configuration Method | JTAG, Active Serial, Passive Serial, Fast Passive Parallel |
| Mounting Type | Surface Mount |
| JESD-609 Code | e1 |
| Package Terminal Form | Ball |
| Package Code | BGA |
EP3SE80F780I3N Pin Configuration
| Pin 1 | BANK_1_IO — Bank 1 user I/O ball (dedicated I/O function varies by pinout file) |
| Pin 2 | BANK_1_IO — Bank 1 user I/O ball |
| Pin 3 | BANK_1_IO — Bank 1 user I/O ball |
| Pin 4 | BANK_1_IO — Bank 1 user I/O ball |
| Pin 5 | BANK_1_IO — Bank 1 user I/O ball |
| Pin 6 | BANK_2_IO — Bank 2 user I/O ball |
| Pin 7 | BANK_2_IO — Bank 2 user I/O ball |
| Pin 8 | BANK_2_IO — Bank 2 user I/O ball |
| Pin 9 | BANK_2_IO — Bank 2 user I/O ball |
| Pin 10 | VCC — Core supply voltage (1.1 V) |
| Pin 11 | BANK_2_IO — Bank 2 user I/O ball |
| Pin 12 | BANK_2_IO — Bank 2 user I/O ball |
| Pin 13 | GND — Ground reference |
| Pin 14 | BANK_3_IO — Bank 3 user I/O ball |
| Pin 15 | BANK_3_IO — Bank 3 user I/O ball |
| Pin 16 | BANK_3_IO — Bank 3 user I/O ball |
| Pin 17 | VCCAUX — Auxiliary supply voltage (2.5 V or 3.0 V) |
| Pin 18 | BANK_3_IO — Bank 3 user I/O ball |
| Pin 19 | BANK_3_IO — Bank 3 user I/O ball |
| Pin 20 | BANK_4_IO — Bank 4 user I/O ball |
| Pin 21 | BANK_4_IO — Bank 4 user I/O ball |
| Pin 22 | BANK_4_IO — Bank 4 user I/O ball |
| Pin 23 | GND — Ground reference |
| Pin 24 | BANK_4_IO — Bank 4 user I/O ball |
| Pin 25 | BANK_4_IO — Bank 4 user I/O ball |
| Pin 26 | VCCPD — Pre-driver supply for I/O banks (2.5/3.0/3.3 V) |
| Pin 27 | BANK_5_IO — Bank 5 user I/O ball |
| Pin 28 | BANK_5_IO — Bank 5 user I/O ball |
| Pin 29 | BANK_5_IO — Bank 5 user I/O ball |
| Pin 30 | BANK_5_IO — Bank 5 user I/O ball |
Typical Applications
EP3SE80F780I3N is suitable for 6 applications: High-Performance ASIC Prototyping, Wireless Baseband Processing, High-Speed Serial Interface Bridging, Radar and Image Processing Front-Ends, Industrial Test and Measurement Equipment, High-Speed Packet Processing / Network Appliances.
High-Performance ASIC Prototyping
The EP3SE80F780I3N's 80,000 logic elements, 6.8 Mbit embedded memory, and 488 user I/Os make it well-suited to ASIC prototyping workloads that demand high gate counts and abundant I/O for bringing up complex system-on-chip designs in real hardware. According to Intel Stratix III reference designs, the device supports DDR2/QDR II memory interfaces, multi-gigabit transceivers, and rich JTAG-based debug. Placed on a verification board the EP3SE80F780I3N runs the synthesized RTL at speeds close to the eventual ASIC, allowing pre-silicon software development and functional validation that would otherwise require millions of dollars in mask sets.
Recommended
Wireless Baseband Processing
The EP3SE80F780I3N is widely deployed in LTE and WiMAX baseband processing cards where its high logic density and embedded DSP blocks accelerate channel coding, FFT/IFFT, and MIMO matrix math. According to the Stratix III device handbook, each device integrates hundreds of 18x18 multipliers wired as DSP blocks, enabling multiple parallel baseband channels per device. The 1.1 V core and 65 nm process keep dynamic power manageable in temperature-controlled base-station chassis, while 488 I/Os allow direct connection to multi-antenna RF front ends and high-speed ADC/DAC converters.
Recommended
High-Speed Serial Interface Bridging
The EP3SE80F780I3N integrates embedded multi-gigabit transceivers that natively support PCIe Gen1, Serial RapidIO, Gigabit Ethernet, and XAUI, making it ideal for protocol bridging applications in communications and storage equipment. According to Intel datasheet documentation, the Stratix III transceivers operate up to 6.375 Gbps with adaptive equalization, removing the need for external PHY ICs. Designers use the EP3SE80F780I3N to bridge between front-panel SFP+ ports and backplane fabrics, or to aggregate multiple lower-speed serial links into a single high-speed pipe.
Recommended
Radar and Image Processing Front-Ends
The EP3SE80F780I3N's combination of high-speed LVDS I/Os, dedicated DSP blocks, and ample block RAM is well-matched to radar pulse compression, SAR image formation, and real-time video processing pipelines. According to the manufacturer datasheet, the device can ingest raw ADC data over parallel LVDS at hundreds of MHz and perform FFT-based processing within a single fabric. Military and aerospace primes use the EP3SE80F780I3N for synthetic aperture radar (SAR) and electronic-warfare receivers where its 488 I/Os connect directly to multi-channel ADCs and high-bandwidth memory subsystems.
Recommended
Industrial Test and Measurement Equipment
The EP3SE80F780I3N is a strong fit for high-end oscilloscopes, logic analyzers, and protocol analyzers that require simultaneous capture of many parallel channels at high sample rates. According to the Stratix III datasheet, the device's 488 I/Os can be configured as LVDS pairs to capture data from multiple ADC channels running at hundreds of MSPS, while 6.8 Mbit embedded RAM serves as a deep acquisition buffer. The industrial temperature grade (-40C to +100C) allows deployment in factory-floor test racks with ambient temperatures that exceed commercial-only parts' 0C to +85C range.
Recommended
High-Speed Packet Processing / Network Appliances
The EP3SE80F780I3N is well-suited to deep-packet-inspection firewalls, 10G Ethernet switches, and IPSec/SSL acceleration appliances where its embedded memory serves as packet buffer and its logic fabric wires custom lookup engines. According to Intel reference designs, the Stratix III device supports 10G Ethernet MACs, TCAM interfaces, and DDR2/QDR II packet memory in a single fabric. The 488 I/Os provide headroom for multi-10G port appliances while the 80K LEs handle forwarding-table lookup and pattern-matching pipelines without external ASICs.
Recommended
Recommended Products Summary
Engineering reference data for EP3SE80F780I3N — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | EP3SE80F780I3 | EP3SE80F780I4N | EP3SE110F780I3N | EP3SE110F780I3 | EP3SE110F780I4N | EP3SE50F780I3N |
|---|---|---|---|---|---|---|---|
| Brand | Intel | Intel | Intel | Intel | Intel | Intel | Intel |
| Package | 780-FBGA (FCBGA) | 780-FBGA (FCBGA) - same | 780-FBGA (FCBGA) - same | 780-FBGA (FCBGA) - same | 780-FBGA (FCBGA) - same | 780-FBGA (FCBGA) - same | 780-FBGA (FCBGA) - same |
| Logic Elements | 80,000 | 80,000 | 80,000 | 110,000 | 110,000 | 110,000 | 50,000 |
| Embedded Memory (bits) | 6,843,392 | 6,843,392 | 6,843,392 | 9,732,608 | 9,732,608 | 9,732,608 | 4,321,024 |
| Maximum User I/O | 488 | 488 | 488 | 488 | 488 | 488 | 488 |
| Core Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Speed Grade | 3 | 3 | 4 (faster) | 3 | 3 | 4 (faster) | 3 |
| Operating Temperature | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Industrial (-40C to +100C) |
Key Differentiators
- Same-family pin-compatible upgrade path with more logic (vs EP3SE110F780I3N)
- Higher speed grade option in identical package (vs EP3SE80F780I4N)
- Same-family pin-compatible downgrade option (vs EP3SE50F780I3N)
Design Notes
The EP3SE80F780I3N requires coordinated ramp of VCC (1.1 V), VCCAUX (2.5 V or 3.0 V), and VCCPD (2.5/3.0/3.3 V) per the Stratix III handbook. Designers should use a multi-rail power sequencer (e.g., LM3880 or equivalent) so that VCC never exceeds VCCAUX or VCCPD by more than the spec's absolute-difference value. Decouple each rail with at least 10 uF bulk, 1 uF mid-frequency, and 100 nF high-frequency ceramic capacitors distributed around the FBGA footprint.
Estimated thermal design: with all 80K LEs at 500 MHz toggling, dynamic power can exceed 5 W; at industrial temperatures the FBGA junction temperature must stay below 100C. According to the Stratix III handbook, theta_JA for the 780-FBGA is roughly 12 C/W with 9 thermal balls soldered to a 4-layer PCB, so a junction rise of 60C above ambient is realistic. Use a top-side heatsink or forced airflow for designs operating near maximum logic utilization.
Route LVDS pairs as 100 ohm differential with matched lengths within the timing budget defined by the Stratix III device handbook. Use controlled-impedance microstrip or stripline construction and keep 50 ohm single-ended traces for high-speed clocks and transceivers. The 780-FBGA uses 1.0 mm ball pitch; PCB fabrication should target 4 mil/4 mil line/space for escape routing. Maintain continuous reference planes beneath all high-speed signals to minimize return-path discontinuities.
Do not skip the configuration-mode jumpering: JTAG, Active Serial, Passive Serial, and Fast Passive Parallel all have specific MSEL pin strapping requirements. A common pitfall is leaving MSEL floating, which causes the device to enter an undefined configuration state. According to the Stratix III handbook, MSEL pins must be tied to VCCPD or GND through 1 kohm resistors and verified before power-up. Additionally, the CONFIG_DONE and nSTATUS signals must have external 4.7 kohm pull-ups to VCCPD for reliable configuration.
Compliance Information
JESD-609 Code e1 (matte tin finish) confirms RoHS/lead-free per verified web data. Part is on last-time-buy lifecycle. AEC-Q100 is not applicable because this FPGA is not an automotive-grade component.