IPN80R4K5P7ATMA1 - 800V 1.5A CoolMOS P7 N-Channel MOSFET | Infineon
MPN: IPN80R4K5P7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.55 | $0.55 |
| 10 | $0.48 | $4.80 |
| 100 | $0.43 | $43.00 |
| 500 | $0.38 | $190.00 |
| 1,000 | $0.34 | $340.00 |
| 3,000 | $0.3 | $900.00 |
IPN80R4K5P7ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used in switched-mode power supplies (SMPS), motor drives, and lighting ballasts. The 800 V CoolMOS P7 sits within the discrete semiconductor hierarchy as: power MOSFET -> N-channel MOSFET -> superjunction MOSFET -> high-voltage MOSFET -> CoolMOS family. Its superjunction (SJ) architecture replaces the conventional planar drift region with alternating P/N pillars, breaking the silicon limit on R DS(on) * area and reducing conduction loss by roughly 30-40 % versus planar 800 V predecessors.
Key features include a 4.5 ohm maximum R DS(on) at VGS = 10 V, integrated Zener-protected gate for ESD robustness, and an intrinsic fast body diode that reduces reverse-recovery loss in hard-switched topologies. The SOT223 footprint supports high-density PCB layouts and a tab pin that doubles as a thermal pad for PCB copper heat-spreading, eliminating the need for an external heatsink in many low-power designs.
Typical applications for the IPN80R4K5P7ATMA1 include flyback converters in auxiliary power supplies for white goods and industrial SMPS, low-power chargers, LED lighting drivers, and primary-side switches in adapters. Its 800 V drain rating provides ample derating margin for universal-input (85-265 V AC) PFC-front-end or quasi-resonant flyback converters, where avalanche ruggedness and dynamic R DS(on) stability matter most.
When designing with this device, observe VGS(th) (typically 3 V) to ensure logic-level gate drives reach full enhancement, and minimize parasitic source inductance for clean switching waveforms. The PG-SOT223 thermal pad must be soldered to a copper pour of at least 1 cm² to keep Tj below 125 °C in continuous operation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IPN80R4K5P7ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPN80R4K5P7ATMA1 (same form factor and footprint) — differing in Technology, Package, RoHS Status, Drain-Source Voltage (V(BR)DSS), Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPN80R3K0P7ATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPN80R2K0P7ATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPN95R1K2P7ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.36 / Unit
View Datasheet →IPN95R3K7P7ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.44 / Unit
View Datasheet →IPN80R4K5P7ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS P7 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID, Tc) | 1.5 A |
| Power Dissipation (Pd, Tc) | 6 W |
| On-Resistance (RDS(on), VGS=10V) | 4.5 ohm max |
| Package | PG-SOT223 (surface mount, 3-pin + tab) |
| Mounting Type | Surface Mount |
| Technology | CoolMOS Superjunction (SJ) |
| Operating Mode | Enhancement-mode |
| Grade | Industrial |
| Application | Low-power SMPS, flyback converters, LED drivers |
| RoHS Status | Compliant |
| Reel / Tape Packaging | Tape & Reel (T/R) |
IPN80R4K5P7ATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate input; requires VGS > 3V typical for full enhancement |
| Pin 2 | Drain (Tab) — Drain connection; tab also serves as thermal pad and must be soldered to copper pour |
| Pin 3 | Source — MOSFET source; reference for gate drive |
Safe Operating Area (DC, Tcase = 25 °C)
Typical Applications
IPN80R4K5P7ATMA1 is suitable for 6 applications: Auxiliary Power Supply for White Goods, LED Lighting Drivers, Industrial SMPS Primary Switch, Mobile Device Chargers and Adapters, Standby Power for Servers and Networking, Solar Microinverter Primary Stage.
Auxiliary Power Supply for White Goods
The IPN80R4K5P7ATMA1 fits low-power flyback auxiliary supplies in white goods such as washing machines, dishwashers, and refrigerators, where 5-12 V standby rails power microcontrollers and display modules. The 800 V VDS rating provides ample avalanche headroom for universal-input (85-265 V AC) rectified mains, while the 1.5 A continuous ID comfortably supports 5-8 W output converters. Compared to a 600 V MOSFET, the 800 V rating reduces failure rate during line transients by roughly 30 %, and the integrated Zener-protected gate improves ESD robustness during PCB assembly.
Recommended
LED Lighting Drivers
The IPN80R4K5P7ATMA1 serves as the primary-side switch in isolated LED driver flyback converters up to 5 W output, commonly used in E27 bulb replacements and downlight drivers. Its 800 V rating handles rectified 230 V AC plus reflected load voltage with comfortable margin, and the PG-SOT223 footprint supports compact driver PCBs. The 4.5 ohm RDS(on) at VGS=10V limits full-load efficiency to roughly 86-88 % at 5 W output, but designers gain a $0.30-0.50 unit cost advantage versus 900 V alternatives. The integrated gate Zener diode reduces ESD failures during high-volume SMT assembly lines.
Recommended
Industrial SMPS Primary Switch
The IPN80R4K5P7ATMA1 is well suited to industrial 24 V SMPS modules as the primary-side switch in 10-20 W flyback or quasi-resonant converters. Its 800 V VDS provides margin against 380 V DC rectified industrial bus voltages, and the 1.5 A ID supports continuous output up to roughly 15 W with proper thermal design. The PG-SOT223 package with its exposed thermal tab simplifies PCB layout by allowing the drain to be soldered directly to a 1 cm² copper pour, eliminating external heatsinks. Compared to older CoolMOS P6 parts, the P7 family offers roughly 30 % lower switching loss at 100 kHz.
Recommended
Mobile Device Chargers and Adapters
The IPN80R4K5P7ATMA1 fits cost-sensitive USB charger and adapter designs in the 5-10 W range, where universal-input 85-265 V AC is rectified to 380 V DC. The 800 V VDS rating handles reflected voltage plus leakage inductance spikes with comfortable margin, and the 1.5 A continuous ID supports the full 5 V / 1 A or 5 V / 2 A output envelopes. The PG-SOT223 surface-mount package enables automated high-volume assembly, while the integrated Zener-protected gate withstands 2 kV HBM ESD during production. Designers typically pair it with the IFS92B controller or similar primary-side regulation ICs.
Recommended
Standby Power for Servers and Networking
The IPN80R4K5P7ATMA1 functions as the primary-side switch in standby supplies for servers, routers, and network switches where 5 V standby rails power management controllers during sleep states. Its 800 V VDS rating handles 380 V rectified DC bus with substantial margin, and the 1.5 A ID supports 3-5 W continuous standby power. The P7 superjunction technology lowers switching losses by roughly 30 % versus planar 800 V predecessors, helping achieve 80 PLUS standby efficiency targets above 0.5 W input. The PG-SOT223 package allows dense PCB layouts typical of 1U server power supplies.
Recommended
Solar Microinverter Primary Stage
The IPN80R4K5P7ATMA1 can serve as the primary-side switch in entry-level solar microinverter front-end DC-DC stages that step 30-50 V panel voltage to 400 V DC bus. While the VDS rating is well above the 400 V bus, designers can use this part as a redundant safety margin against voltage spikes from long PV cables. The 1.5 A continuous current handles microinverter outputs up to 200 W, and the 4.5 ohm RDS(on) limits full-load efficiency to roughly 92-93 %. The industrial grade qualification supports 25-year service-life targets in outdoor PV installations.
Recommended
Recommended Products Summary
Engineering reference data for IPN80R4K5P7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPN80R3K0P7ATMA1 | IPN80R2K0P7ATMA1 | IPN95R1K2P7ATMA1 | IPN95R3K7P7ATMA1 | STF9N90K5 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics |
| Package | PG-SOT223 | PG-SOT223 - same | PG-SOT223 - same | PG-SOT223 - same | PG-SOT223 - same | TO-220FP - different |
| Drain-Source Voltage (VDS) | 800 V | 800 V - same | 800 V - same | 950 V - higher (+19%) | 950 V - higher (+19%) | 900 V - higher (+12.5%) |
| On-Resistance RDS(on) at VGS=10V | 4.5 ohm | 3.0 ohm (-33%) | 2.0 ohm (-56%) | 1.2 ohm (-73%) | 3.7 ohm (-18%) | 0.78 ohm (-83%) |
| Continuous Drain Current (ID) | 1.5 A | 1.5 A - same | 1.5 A - same | 2.0 A (+33%) | 2.0 A (+33%) | 9.0 A (+500%) |
| Technology | CoolMOS P7 SJ | CoolMOS P7 SJ | CoolMOS P7 SJ | CoolMOS P7 SJ | CoolMOS P7 SJ | MDmesh K5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Through-hole |
Key Differentiators
- Lowest price point in Infineon 800V PG-SOT223 lineup (vs IPN80R3K0P7ATMA1)
- Lower VDS rating than 950V P7 family (vs IPN95R3K7P7ATMA1)
- Integrated Zener-protected gate (vs STF9N90K5)
- Surface-mount package versus through-hole alternatives (vs STF9N90K5)
Design Notes
Estimated: At ID = 1.0 A and RDS(on) = 4.5 ohm, conduction loss equals I² * R = 4.5 W, exceeding 75 % of the 6 W package rating. The PG-SOT223 thermal pad (pin 2 = Drain tab) must be soldered to a copper pour of at least 1 cm² to keep junction temperature below Tj(max) = 150 °C. Without copper spreading, theta_JA rises above 100 °C/W and the device will thermally limit at roughly 0.6 A continuous load.
Minimize the high-frequency switching loop between the drain tab, transformer primary winding, and the bulk capacitor. Keep the loop area below 0.5 cm² to limit voltage overshoot during turn-off. Place the gate-drive resistor (typically 10-33 ohm) within 2 cm of pin 1 to suppress parasitic ringing. The source pin (pin 3) should be referenced to the controller's COM with a Kelvin connection if available, otherwise use a star-ground topology to avoid common-source inductance.
Do not exceed VGS(max) = ±20 V; the IPN80R4K5P7ATMA1 has an integrated Zener that clamps transients, but a steady DC gate drive above 20 V will damage the gate oxide. Verify that the controller's VCC is regulated below 18 V before connecting to the gate via the drive resistor. Also avoid operating the device in linear mode for extended periods - the SOA boundary at 800 V is only 0.05 A DC, so any fault condition requiring linear operation will quickly exceed thermal limits.
The PG-SOT223 footprint requires a thermal pad opening of approximately 6 mm × 2.5 mm, with copper pours extending at least 1 cm² on both top and inner layers connected by thermal vias (typically 4-6 × 0.3 mm vias). Keep the drain tab electrically isolated from switching nodes if possible to allow direct heatsink mounting; otherwise, route copper away from the tab to avoid short circuits during PCB assembly.
CoolMOS P7 devices exhibit low gate charge (Qg < 20 nC typical at 800 V) enabling fast switching transitions of 50-100 ns. Add a 10 kohm pull-down resistor from gate to source to ensure the device stays off during controller power-up. For hard-switched topologies, a small RC snubber (10 ohm + 1 nF) across the primary winding helps damp voltage ringing caused by leakage inductance.
Compliance Information
Industrial grade per Infineon product page. RoHS compliant. AEC-Q100 not applicable (industrial SMPS market). Halogen-free status not explicitly stated in web data.
