IRFR6215TRPBF - 150V P-Channel HEXFET MOSFET, 13A | Infineon
MPN: IRFR6215TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.18 | $118.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.78 | $780.00 |
| 3,000 | $0.65 | $1,950.00 |
IRFR6215TRPBF Overview
A P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device in which the channel is formed by p-type semiconductor material, allowing current to flow when the gate is pulled below the source. P-channel MOSFETs sit in the same taxonomy as their N-channel siblings, both belonging to the power MOSFET > MOSFET > discrete semiconductor > semiconductor hierarchy. P-channel parts are commonly used as high-side switches because they can be driven by a low-side referenced gate signal, simplifying the bootstrap or charge-pump circuitry required by N-channel high-side drivers.
Key features include a 0.295 ohm maximum on-resistance at VGS = -10 V, 44 nC total gate charge, fast switching speed, and a ruggedized HEXFET cell design that has been production-proven across multiple generations. The device's 150 V drain-source breakdown provides ample margin for 48 V telecom rails, 60 V industrial bus systems, and offline flyback auxiliary circuits. The DPAK (TO-252AA) surface-mount package exposes the die to a copper tab on the PCB, enabling 110 W dissipation with proper footprint design.
The IRFR6215 uses a fifth-generation HEXFET cell with a stripe-cell planar DMOS architecture, providing a strong figure-of-merit (FOM = RDS(on) x Qg) and proven avalanche ruggedness. The gate threshold is specified in the standard -2 V to -4 V range, and the device is fully characterized for both continuous and pulsed operation. The P-channel polarity allows direct high-side switching without a bootstrap circuit, reducing overall BOM count.
Typical applications include load switches, power management in industrial and telecom 48 V systems, battery protection circuits, motor drive H-bridges (high-side position), and DC-DC converter synchronous rectifiers. Designers value this part for its balance of voltage rating, current handling, and DPAK footprint compatibility with standard reflow profiles.
When designing with this device, ensure that the PCB copper pad under the DPAK tab is sized to handle the desired power dissipation, and that the gate drive is referenced to the source pin (not ground) to maintain proper VGS enhancement. A gate-source resistor of 10 kohm or higher is recommended to prevent inadvertent turn-on from dv/dt-induced Miller coupling.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single reference for sourcing and substitution decisions.
Drop-in alternatives for IRFR6215TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFR6215TRPBF (same form factor and footprint) β differing in MSL Level, Package, RoHS Status, Technology.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFR6215TRLPBF
β Drop-Inβ In Stock
$0.38 / Unit
View Datasheet βIRF6215PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFR6215PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFR6215TRPBF Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -150 V |
| Continuous Drain Current (ID, Tc=25C) | -13 A |
| Power Dissipation (PD, Tc=25C) | 110 W |
| On-Resistance (RDS(on) max) | 0.295 ohm at VGS = -10 V |
| Total Gate Charge (Qg) | 44 nC |
| Operating Temperature Range | -55C to +175C |
| Package | TO-252AA (DPAK), surface mount |
| Technology | HEXFET (5th generation IR MOSFET) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 |
| RoHS Status | Compliant (Lead-Free PBF suffix) |
| REACH Status | Compliant |
| Manufacturer | Infineon (formerly International Rectifier) |
IRFR6215TRPBF Pin Configuration
| Pin 1 | Gate β Gate control input; drive referenced to Source |
| Pin 2 | Drain β Drain connection (also tied to the metal tab on the back of the package) |
| Pin 3 | Source β Source connection; reference for gate drive |
Safe Operating Area (DC)
Typical Applications
IRFR6215TRPBF is suitable for 6 applications: 48V Telecom High-Side Load Switch, Industrial 24V/48V DC Motor H-Bridge High-Side, Battery Protection Disconnect for Multi-Cell Battery Packs, Synchronous Rectifier (Low-Side) in Flyback Converters, Hot-Swap / Inrush Current Limiter for 48V Backplanes, Automotive 12V/24V LED Driver High-Side Switch.
48V Telecom High-Side Load Switch
The IRFR6215TRPBF is well-suited for 48V telecom high-side load switching because its 150V VDS rating provides ample margin above 48V nominal and 56V transient spikes, while the P-channel polarity allows direct ground-referenced gate drive without a bootstrap circuit. Placed between the 48V rail and the load with a 10kohm gate-source pull-up and 100ohm gate series resistor, it achieves sub-microsecond turn-off. The 0.295 ohm RDS(on) results in approximately 120mW conduction loss at 13A, which the DPAK footprint dissipates easily with standard 1oz copper.
Recommended
Industrial 24V/48V DC Motor H-Bridge High-Side
In a 24V or 48V brushed DC motor H-bridge, the IRFR6215TRPBF serves as the high-side switch in each half-bridge, paired with an N-channel MOSFET on the low side. The P-channel high-side position eliminates the bootstrap capacitor and diode required for N-channel high-side drivers, reducing BOM by two components per leg. With 13A continuous and 110W dissipation, the device handles most sub-100W motor loads. The fifth-generation HEXFET cell provides robust avalanche ruggedness for the back-EMF energy stored in motor winding inductance during PWM commutation.
Recommended
Battery Protection Disconnect for Multi-Cell Battery Packs
The IRFR6215TRPBF operates as a high-side battery protection disconnect in 24V, 36V, and 48V lithium-ion or lead-acid battery packs, where its 150V VDS comfortably exceeds the maximum pack voltage. The P-channel configuration allows the protection circuit to interrupt the positive rail directly, a topology that is simpler and lower-cost than N-channel high-side protection. At 13A continuous, the part suits e-bike, e-scooter, and small UPS battery systems. The 0.295 ohm RDS(on) creates a 130mV drop at 13A, negligible compared to typical battery voltages.
Recommended
Synchronous Rectifier (Low-Side) in Flyback Converters
In isolated flyback converter secondary sides, the IRFR6215TRPBF functions as the low-side synchronous rectifier, replacing a Schottky diode to improve efficiency. The 150V VDS provides margin above 48V reflected outputs, and the 0.295 ohm RDS(on) delivers lower conduction loss than typical 100V Schottky diodes at currents above 5A. A standard SR controller IC drives the gate synchronously with the primary switch. Designers should verify the body diode reverse recovery characteristics for DCM operation at light loads.
Recommended
Hot-Swap / Inrush Current Limiter for 48V Backplanes
Hot-swap controllers use the IRFR6215TRPBF as the main pass element in 48V backplane distribution, where the P-channel position allows turn-on with a soft-start controlled by the gate ramp rate. The 13A continuous current suits mid-power blade servers and POE+ applications, while the 150V VDS tolerates transients on 48V distribution buses. Gate-source capacitance allows controlled dV/dt during turn-on, limiting inrush to safe levels. The DPAK footprint is compatible with standard hot-swap controller pinouts, simplifying PCB layout reuse.
Recommended
Automotive 12V/24V LED Driver High-Side Switch
The IRFR6215TRPBF serves as a high-side PWM switch for 12V and 24V automotive LED lighting, where its P-channel polarity allows direct drive from a 3.3V or 5V MCU without a gate driver IC. At 13A continuous, a single device can drive LED strings totaling 100W or more. The rugged HEXFET cell handles the inductive kick from wiring harness inductance, and the DPAK footprint is widely accepted in automotive designs. For AEC-Q100 qualified requirements, the IRFR6215TRPBF is industrial-grade; the automotive grade equivalent is the IRFR6215TRPBF-7 (consult Infineon for current automotive part number).
Recommended
Recommended Products Summary
Engineering reference data for IRFR6215TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR6215TRLPBF | IRF6215PBF | IRFR6215PBF |
|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -150 V | -150 V | -150 V | -150 V |
| Continuous Drain Current (ID) | -13 A | -13 A | -13 A | -13 A |
| On-Resistance (RDS(on) max) | 0.295 ohm | 0.295 ohm | 0.295 ohm | 0.295 ohm |
| Total Gate Charge (Qg) | 44 nC | 44 nC | 44 nC | 44 nC |
| Power Dissipation (PD) | 110 W | 110 W | 110 W | 110 W |
| Packaging Format | Tape & Reel (right-hand) | Tape & Reel (left-hand) | Tube | Tube |
Key Differentiators
- P-channel high-side switch eliminates bootstrap circuit (vs N-channel MOSFETs in high-side position)
- 150V VDS gives 50% voltage headroom over 100V-class parts (vs 100V P-channel MOSFETs (e.g., IRFR9024N family))
- Same-die packaging variants simplify sourcing (vs Multiple cross-brand equivalents with subtle spec differences)
Design Notes
Estimated: at continuous 13A with RDS(on) of 0.295 ohm, conduction loss is approximately 50W. The DPAK package has a typical RthJA of 50 C/W on a 1oz copper 1 square inch pad, resulting in a 2500C junction temperature rise above ambient - this far exceeds the 175C maximum. For continuous 13A operation, the PCB copper pad must be expanded to at least 4 square inches or an external heatsink must be attached to the tab. For most applications, practical derating limits continuous current to 5-8A without a heatsink.
The DPAK footprint requires a center thermal pad of approximately 5.5mm x 4.6mm connected to the drain (pin 2). Place at least 4 thermal vias (0.3mm-0.5mm diameter) in the pad to conduct heat to the bottom copper plane. Keep the gate trace short and away from the drain switching node to minimize parasitic Miller injection. Use a 10kohm to 100kohm gate-source resistor to hold the MOSFET off during power-up and to discharge the gate when the driver is tri-stated.
Do not drive the gate to a voltage above +/-20V VGS - the thin gate oxide is rated for only 20V absolute maximum and will fail with a brief over-voltage spike. When using a P-channel high-side switch, ensure the gate is pulled UP to the source voltage (or higher) for turn-off, and pulled DOWN toward ground (or to -10V) for turn-on. Inductive load switching without a flyback diode or snubber will avalanche the body diode; verify the single-pulse avalanche energy rating before deploying in such circuits.
Compliance Information
PBF suffix indicates lead-free, RoHS compliant. Industrial grade - not AEC-Q100 qualified; for automotive applications contact Infineon for current automotive-grade equivalent. Halogen-free status not explicitly stated in verified data.
