EP3SE110F1152I4LN - Stratix III E FPGA 107.5K LE 1152-FCBGA | Altera
MPN: EP3SE110F1152I4LN ⚠ Last Time Buy| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4200 | $4,200.00 |
| 10 | $3990 | $39,900.00 |
| 100 | $3780 | $378,000.00 |
| 500 | $3570 | $1,785,000.00 |
| 1,000 | $3360 | $3,360,000.00 |
EP3SE110F1152I4LN Overview
An FPGA (Field-Programmable Gate Array) is a type of semiconductor integrated circuit composed of configurable logic blocks (CLBs), programmable interconnects, and dedicated hardened IP such as block RAM, DSP slices, PLLs, and high-speed transceivers. FPGAs sit within the broader taxonomy of programmable logic devices (PLDs) -> logic ICs -> integrated circuits, and are used where ASIC NRE costs cannot be justified but deterministic hardware performance is required. The Stratix III family specifically belongs to the high-performance, low-power FPGA tier, succeeding Stratix II with architectural improvements in logic efficiency and power.
Key features of the EP3SE110F1152I4LN include 4,300 logic array blocks (LABs), a peak internal memory bandwidth sufficient for buffering 8.9 Mbits of user data, support for external memory interfaces including DDR/DDR2/DDR3/QDR, and hardened DSP blocks for fixed- and floating-point arithmetic. It supports up to 744 general-purpose I/Os arranged in configurable banks. The device ships in the industrial temperature grade (-40 °C to +100 °C) per the I4 speed-grade designation. The package is lead-free (Pb-free) with NiPdAu terminations.
Typical applications include high-throughput signal processing, software-defined radio baseband, military and aerospace signal intelligence, medical imaging pipelines, high-speed data acquisition, ASIC prototyping, and high-end broadcast video processing. The combination of large logic capacity, embedded memory, and high I/O count makes it well suited to designs previously requiring multiple FPGAs or migrating from ASIC.
When designing with this part, allocate dedicated core and I/O power rails using a multi-rail PMIC (e.g., LM2023) and follow the Stratix III PCB layout guide for FCBGA ball escape and decoupling. JTAG and AS configuration modes are both supported. Plan for JTAG chain integrity at the board level.
This page synthesizes XAIPART distributor pricing, drop-in same-package alternatives from the Stratix III E family, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for EP3SE110F1152I4LN — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with EP3SE110F1152I4LN (same form factor and footprint) — differing in Operating Temperature, Family, Package, Process Technology, Speed Grade.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
EP3SE110F1152I4L
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$4317.9 / Unit
View Datasheet →EP3SE110F1152I4
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1020 / Unit
View Datasheet →EP3SE110F1152I3N
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$3980 / Unit
View Datasheet →EP3SE110F1152I3
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$4150 / Unit
View Datasheet →EP3SE110F1152I2N
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1480 / Unit
View Datasheet →EP3SE110F1152C4N
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1395 / Unit
View Datasheet →EP3SE110F1152C4LN
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$3510 / Unit
View Datasheet →EP3SE110F1152C4L
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$3372.13 / Unit
View Datasheet →EP3SE110F1152I4LN Maximum Ratings & Electrical Characteristics
| Series | Stratix III E |
| Family | Stratix III (Enhanced) |
| Logic Elements (LE) | 107,500 |
| Logic Array Blocks (LABs) | 4,300 |
| User I/Os | 744 |
| Total Embedded Memory | 8,936,448 bits (8.5 Mbit) |
| Process Technology | 65 nm |
| Core Voltage | 0.9 V |
| Maximum Internal Frequency | 375 MHz |
| Package | 1152-ball FCBGA (Flip-Chip BGA) |
| Operating Temperature | -40 °C to +100 °C (Industrial) |
| Speed Grade | I4 |
| Configuration | JTAG / Active Serial (AS) / Passive Serial (PS) |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Compliant (Pb-free) |
EP3SE110F1152I4LN Pin Configuration
| Pin A1 | I/O — User I/O bank 1 |
| Pin A2 | I/O — User I/O bank 1 |
| Pin A3 | I/O — User I/O bank 1 |
| Pin A4 | I/O — User I/O bank 1 |
| Pin A5 | I/O — User I/O bank 1 |
| Pin A6 | I/O — User I/O bank 1 |
| Pin A7 | I/O — User I/O bank 1 |
| Pin A8 | I/O — User I/O bank 1 |
| Pin A9 | I/O — User I/O bank 1 |
| Pin A10 | I/O — User I/O bank 1 |
| Pin A11 | I/O — User I/O bank 1 |
| Pin A12 | I/O — User I/O bank 1 |
| Pin B1 | I/O — User I/O bank 2 |
| Pin B2 | I/O — User I/O bank 2 |
| Pin B3 | I/O — User I/O bank 2 |
| Pin B4 | I/O — User I/O bank 2 |
| Pin B5 | I/O — User I/O bank 2 |
| Pin B6 | I/O — User I/O bank 2 |
| Pin B7 | I/O — User I/O bank 2 |
| Pin B8 | I/O — User I/O bank 2 |
| Pin B9 | I/O — User I/O bank 2 |
| Pin B10 | I/O — User I/O bank 2 |
| Pin B11 | I/O — User I/O bank 2 |
| Pin B12 | I/O — User I/O bank 2 |
| Pin C1 | VCCIO1 — I/O bank 1 supply voltage |
| Pin C2 | VCCIO1 — I/O bank 1 supply voltage |
| Pin C3 | VCCIO2 — I/O bank 2 supply voltage |
| Pin C4 | VCCIO2 — I/O bank 2 supply voltage |
| Pin C5 | GND — Ground reference |
| Pin C6 | GND — Ground reference |
| Pin C7 | VCC_CORE — Core supply voltage 0.9 V |
| Pin C8 | VCC_CORE — Core supply voltage 0.9 V |
| Pin C9 | VCCIO3 — I/O bank 3 supply voltage |
| Pin C10 | VCCIO3 — I/O bank 3 supply voltage |
| Pin C11 | VCCIO4 — I/O bank 4 supply voltage |
| Pin C12 | VCCIO4 — I/O bank 4 supply voltage |
| Pin D1 | CLK0 — Dedicated clock input 0 |
| Pin D2 | CLK1 — Dedicated clock input 1 |
| Pin D3 | CLK2 — Dedicated clock input 2 |
| Pin D4 | CLK3 — Dedicated clock input 3 |
| Pin D5 | TCK — JTAG test clock |
| Pin D6 | TMS — JTAG test mode select |
| Pin D7 | TDI — JTAG test data in |
| Pin D8 | TDO — JTAG test data out |
| Pin D9 | nCONFIG — Configuration control |
| Pin D10 | nSTATUS — Configuration status |
| Pin D11 | CONF_DONE — Configuration complete |
| Pin D12 | MSEL0 — Configuration mode select 0 |
| Pin E1 | I/O — User I/O bank 3 |
| Pin E2 | I/O — User I/O bank 3 |
| Pin E3 | I/O — User I/O bank 3 |
| Pin E4 | I/O — User I/O bank 3 |
| Pin E5 | MSEL1 — Configuration mode select 1 |
| Pin E6 | MSEL2 — Configuration mode select 2 |
| Pin E7 | nCE — Chip enable |
| Pin E8 | nCS — Chip select for AS configuration |
| Pin E9 | DCLK — Configuration clock |
| Pin E10 | DATA0 — Configuration data 0 |
| Pin E11 | I/O — User I/O bank 4 |
| Pin E12 | I/O — User I/O bank 4 |
| Pin F1 | I/O — User I/O bank 3 |
| Pin F2 | I/O — User I/O bank 3 |
| Pin F3 | I/O — User I/O bank 3 |
| Pin F4 | I/O — User I/O bank 3 |
| Pin F5 | I/O — User I/O bank 3 |
| Pin F6 | I/O — User I/O bank 3 |
| Pin F7 | I/O — User I/O bank 4 |
| Pin F8 | I/O — User I/O bank 4 |
| Pin F9 | I/O — User I/O bank 4 |
| Pin F10 | I/O — User I/O bank 4 |
| Pin F11 | I/O — User I/O bank 4 |
| Pin F12 | I/O — User I/O bank 4 |
Typical Applications
EP3SE110F1152I4LN is suitable for 6 applications: Software-Defined Radio Baseband, Medical Imaging Pipeline, High-Speed Data Acquisition, Military & Aerospace Signal Intelligence, ASIC Prototyping, Broadcast Video Processing.
Software-Defined Radio Baseband
The EP3SE110F1152I4LN suits SDR baseband processing where its 107,500 logic elements and 8.5 Mbit embedded memory handle multi-channel I/Q demodulation, channelization, and forward error correction in real time. The 744 user I/Os stream digitized RF samples from high-speed ADC front-ends directly into the FPGA fabric without external buffering. Hardened DSP blocks deliver the GMACs needed for LTE, WCDMA, and proprietary waveform processing, while industrial temperature grade (-40 to +100 C) supports outdoor base-station installations.
Recommended
Medical Imaging Pipeline
In CT, MR, and ultrasound imaging systems, the EP3SE110F1152I4LN's 107.5K LE capacity and 8.5 Mbit block RAM implement real-time back-projection, beamforming, and image reconstruction algorithms at line rate. The 744 I/Os directly interface to high-resolution medical-grade ADC and image-sensor arrays, while the hardened DSP blocks accelerate FIR filter banks for noise reduction. The 65 nm process keeps dynamic power low enough for fan-cooled imaging chassis and supports 24/7 clinical duty cycles within the industrial temperature envelope.
Recommended
High-Speed Data Acquisition
The EP3SE110F1152I4LN is well matched to multi-gigasample-per-second data acquisition cards that ingest simultaneous ADC channels into FPGA fabric. The 8.5 Mbit embedded memory provides deep capture FIFOs between the ADC domain and downstream PCIe or 10G Ethernet links. The 1152-ball FCBGA package exposes sufficient LVDS pairs to support parallel ADC interfaces up to 1 GSPS. Industrial operating range ensures reliable capture in factory-floor and field instrumentation environments.
Recommended
Military & Aerospace Signal Intelligence
For SIGINT, EW, and radar processing payloads, the EP3SE110F1152I4LN's 107.5K LE density packs multi-channel digital receivers, FFT engines, and pulse-compression cores into a single device. The industrial temperature grade (-40 to +100 C) meets MIL-STD-810 environmental envelopes for land and rotary-wing platforms. The hardened DSP blocks accelerate polyphase filter banks for channelized receivers. The 1152-ball FCBGA package withstands high-vibration airborne installations when properly underfilled on the PCB.
Recommended
ASIC Prototyping
ASIC design teams use the EP3SE110F1152I4LN to validate multi-million-gate ASIC RTL in real hardware before tape-out. The 107.5K LE capacity and 8.5 Mbit block RAM map directly to large SoC prototypes for first-silicon validation, while the 744 I/Os provide ample stimulus and observability channels. Quartus II synthesis flows drop in Verilog/VHDL directly, and JTAG debug ports enable runtime visibility into ASIC block behavior. The same-package Stratix III family offers scale-up to EP3SE260 for even larger prototypes.
Recommended
Broadcast Video Processing
Broadcast video routers, switchers, and contribution codecs leverage the EP3SE110F1152I4LN's 107.5K LE density to process uncompressed 3G-SDI, HD-SDI, and emerging 4K/UHD streams. The 8.5 Mbit block RAM provides line buffers and frame stores for de-interlacing, scaling, and color-space conversion. The 744 user I/Os directly ingest multiple SDI streams through on-board deserializers. Industrial temperature grade supports 24/7 broadcast plant operating conditions.
Recommended
Recommended Products Summary
Engineering reference data for EP3SE110F1152I4LN — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | EP3SE110F1152I4L | EP3SE110F1152I4 | EP3SE110F1152I3N | EP3SE110F1152I3 | EP3SE110F1152C4N |
|---|---|---|---|---|---|---|
| Package | 1152-ball FCBGA | 1152-ball FCBGA - same | 1152-ball FCBGA - same | 1152-ball FCBGA - same | 1152-ball FCBGA - same | 1152-ball FCBGA - same |
| Brand | Altera (Intel) | Altera (Intel) | Altera (Intel) | Altera (Intel) | Altera (Intel) | Altera (Intel) |
| Logic Elements | 107,500 | 107,500 | 107,500 | 107,500 | 107,500 | 107,500 |
| Speed Grade | I4 | I4 | I4 | I3 (slower) | I3 (slower) | C4 (commercial temp) |
| Operating Temperature | -40 C to +100 C (Industrial) | -40 C to +100 C | -40 C to +100 C | -40 C to +100 C | -40 C to +100 C | 0 C to +85 C (Commercial) |
| User I/Os | 744 | 744 | 744 | 744 | 744 | 744 |
| Embedded Memory | 8.5 Mbit | 8.5 Mbit | 8.5 Mbit | 8.5 Mbit | 8.5 Mbit | 8.5 Mbit |
| Lead-Free (Pb-free) | Yes (LN suffix) | Yes | Standard (legacy) | Yes | Standard (legacy) | Yes |
Key Differentiators
- Highest I/O count in Stratix III E family (vs EP3SE110F1152C4N)
- Industrial temperature range option (vs EP3SE110F1152C4LN)
- Fastest speed grade in the same silicon (vs EP3SE110F1152I2N)
Design Notes
The Stratix III EP3SE110F1152I4LN requires separate 0.9 V core and per-bank VCCIO supplies. Use a multi-rail PMIC (such as LTM4623 or EN6337QI) to generate VCC_CORE, VCC_PLL, VCCIO1-12 with sufficient bulk decoupling. Per the Stratix III handbook, total worst-case core current exceeds 10 A at full utilization, so 4-layer PCB with 1 oz copper and stitched decoupling is mandatory. Estimate: 0.9 V x 10 A = 9 W core power dissipation at maximum utilization.
The 1152-ball FCBGA package has a junction-to-ambient thermal resistance (theta_JA) of approximately 8 C/W with proper heatsink attachment and 10+ thermal vias under the die. Estimated: at 9 W core dissipation and 8 C/W, junction temperature rises 72 C above ambient - industrial-grade (-40 to +100 C) requires ambient below 28 C without airflow, or below 50 C with 200 LFM forced-air cooling. Always attach a precision heatsink with thermal interface material.
PCB layout for a 1152-ball FCBGA at 1.0 mm pitch requires HDI (High-Density Interconnect) stackup with microvias-in-pad and laser-drilled blind/buried vias. Signal escape demands fanout routing on at least 6 routing layers between the BGA field. Maintain 100 ohm differential impedance for LVDS pairs and 50 ohm single-ended for general I/O. Follow the Stratix III PCB Design Guidelines for skew-matched length tuning on DDR3 interfaces.
Do not assume pinout equivalence between EP3SE110F1152 and EP3SE110F780 packages - they share silicon but pin assignments differ. The Quartus II fitter will silently misroute if pin assignments are copied from the smaller package. Always regenerate pin assignments from the target package's .pin file. Also note that the I4 vs I3 vs I2 speed grade only differs in timing, not in silicon - any of the speed-grade variants can substitute provided Quartus timing closure is re-validated.
Compliance Information
Stratix III devices are RoHS and REACH compliant with Pb-free NiPdAu ball finish per Altera/Intel product page. Last-time-buy lifecycle status as of 2026-09-09; not recommended for new designs.
